课件-光伏组件基础知识培训

1、品质品质中ITEMS目及组件主要类型和发展ITEMS目及组件主要类型和发展方一规组件生产过程及要组件生产流 三用的组件知光生伏打效应, 硅电池光谱响应曲一些有用的光一光及组件主要类型和发展方一光及组件主要类型和发展方VV-屋顶组双玻组V-中空组VV-屋顶组双玻组V-中空组二常规组件二常规组件生产过程及要求组件生产流SolderingpreparationQualityControlSolderingpreparationQualityControl Ribbons : Ribbon floating time(ribbons soldering Cell solderingQualityCon

2、trolCell solderingQualityControl Soldering Cell pull Soldering :CellstringQualityControlCellstringQualityControl: Soldering temperature (for manual Cell pull (2pcs per shift,1pc for front side,1pc for back Soldering (cold soldering/ribbon deviation and so LayupQualityControl: LayLayupQualityControl:

3、 Lay up ion area Soldering temperature (390+/20 ELtest首次ELQualityControlELtest首次ELQualityControlEL :Lamination层QualityControl Lamination Lamination层QualityControl Lamination :Vacuum time. heating temperature, heating EVA cross link test(70%90%,once QualityControlQualityControl Lamination Modules :Fr

4、amegluingQualityControl:FramegluingQualityControl: Module Miter gap. (width, length, QualityControl: ModuleQualityControl: Module Miter gap. (width, length, SecondgluingQualityControl:SecondgluingQualityControl: Module Miter gap. (width, length, FramepressingQualityControl:FramepressingQualityContro

5、l: Module Miter gap. (width, length, JBinstallatianQualityControlJBinstallatianQualityControl: Soldering A/B silicone matching JB gluing QualityControl:JB gluing QualityControl: Soldering A/B silicone matching QualityControl CuringQualityControl Curing time:4 Humidity :FlashtestQualityControl:Flasht

6、estQualityControl: SurfacecleaningSurfacecleaningQualityControl:QualityControl:SecondELtest二次ELSecondELtest二次ELQualityControl: 100% EL test according to EL FinalinspectionQualityControlFinalinspectionQualityControl: 100% visual inspection according to OSC 当光或其他光照射半导体的PN结时，就会产生光生伏打效应。光生伏打效应得PN结两边出现电压

7、，叫做光生电压。使PN结短路，就会产生电流TypicalTypical-er Voltage er Open-CircuitVoltage Short-CircuitCurrent Max-System Cell Module EfficiencyCell Size (mm)Cell and ConnectionsMono-crystalline silicon，72 inseries Max. Series FusePmTemperature -0.45 VocTemperature -Isc Temperature Coefficient+0.05%/C NOCT Nominal Oper

8、ating Cell Temperature47 2 CTest STC:AM=1.5,1000W/m2, CellsTemperature AM=1.5, 1000W/m2, Cells Temperature 光谱AM=0: 大气层外（地球平均公转轨道上光平面上的垂直日照光入射角AM=1.5, 1000W/m2, Cells Temperature 光谱AM=0: 大气层外（地球平均公转轨道上光平面上的垂直日照光入射角48度时的日照正中在南面正中时赤AM=1.5: 一定的天顶角（设正中为0度光强CellsTemperatureAM 1.5AM=1.5WavelengthI-VCurves-

9、230WI-VCurves-230WTemperature I-V Curves -230组Temperature I-V Curves -230组Title in Title in 1Crystallinesiliconterrestrialphotovoltaic (PV)-Design qualification and type GB 2Photovoltaic (PV) module safety qualification - Part 1: Requirements for construction IEC61730-1第1部分: GB/T 3Photovoltaic (PV)

10、module safety qualification - Part 2: Requirements for testing IEC61730-2Title in Title in 1Crystallinesiliconterrestrialphotovoltaic (PV)-Design qualification and type GB 2Photovoltaic (PV) module safety qualification - Part 1: Requirements for construction IEC61730-1第1部分: GB/T 3Photovoltaic (PV) m

11、odule safety qualification - Part 2: Requirements for testing IEC61730-2第2部分: GB/T 4FlatPlatePhotovoltaic Modules and Panels 5Solar photovoltaic energy systems-Termsand 光伏能源系统.GB/T6Photovoltaic devi-Part 1: Measurement ofphotovoltaic current-voltage characteristics1部分光伏电流-电压特GB/T7Photovoltaic devi-Part 2: Requirements for referen光伏器件第2部分: 标准GB/T8Photovoltaic devi- Part 6: Requirements for referen光伏器件第6部分: 标准9UV test forphotovoltaic (PV)光伏（PV）GB/TThin-film terrestrial photovoltaic (PV) modules - Design qualification and type approvalGB/TSaltmist testing ofphotovoltaic (PV) G