半导体中英对照.doc

倒序浏览0| Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子 Alignment Precision - Displacement of patterns that occurs during the photolithography process. . u! F. W ! b# j4 q 套准精度 - 在光刻工艺中转移图形的精度。 2 v I; S4 U, T* r d9 H3 b! c Anisotropic - A process of etching that has very little or no undercutting , i( N: Z7 u; 3 z 各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。 : 3 v& P1 s1 3 z. ; ? Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. + 7 c* p x H3 B0 m; r 沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。 ) 6 f: K* N7 I8 r; W$ t m* P Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. 椭圆方位角 - 测量入射面和主晶轴之间的角度。 Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use back surface.) 背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”） 7 h4 p; ? D! j0 H( I0 X- x Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。 Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。 - ? x5 Q5 x& d! A* P% y Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. ; o! k) , + i( V# Z- Y 绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。 Bonding Interface - The area where the bonding of two wafers occurs. 绑定面 - 两个晶圆片结合的接触区。 : c& H! o, # 4 Q Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic. 0 / J% K% G, A, B6 b, t, c. I* w 埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋层(BOX) - 在两个晶圆片间的绝缘层。 Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer. 6 p% i. k S- N2 I 载流子 - 晶圆片中用来传导电流的空穴或电子。 . k1 Y# W# % ?5 v5 Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process. 化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。 Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. - k7 v: H1 s q, t$ t0 u 卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。 Cleavage Plane - A fracture plane that is preferred. # d; r7 3 x8 / u& 6 n 解理面 - 破裂面 * N+ r& s$ R1 t0 J. w Crack - A mark found on a wafer that is greater than 0.25 mm in length. & B A3 c E6 j; u 裂纹 - 长度大于0.25毫米的晶圆片表面微痕。 ( z( c2 T( y4 : | Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually. 4 D# R Z; e9 p6 - ? 微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。 Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material. 传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。 7 T x4 k p8 j7 R/ e Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”. t* V4 J: / , W0 e+ L, L 导电类型 - 晶圆片中载流子的类型，N型和P型。 Contaminant, Particulate (see light point defect) 污染微粒 （参见光点缺陷） / E1 & F# _) O1 ; t- C% V8 J, I Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. * 1 |7 i # 4 h& j. k 沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。 Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污颗粒 - 晶圆片表面上的颗粒。 ( o8 J# d+ E. V* u Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuits electrical performance. 晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。 Crystal Indices (see Miller indices) l6 a 3 ; q9 G& g0 s7 W 晶体指数 （参见米勒指数） . . H1 U/ j e% r Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers. 耗尽层 - 晶圆片上的电场区域，此区域排除载流子。 Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions. ! Y+ C5 c( I/ F$ L: Y( v 表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。 8 f& u7 u) Y6 n8 M$ A U; y Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”. . w/ n5 _+ C8 T* ?( P 施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。 M, A% F! - U! x9 Z4 m Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements. 搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。 M5 y2 g( Q D1 % z Doping - The process of the donation of an electron or hole to the conduction process by a dopant. 9 t i4 b. ! y; E z S5 % P2 W i 掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。 Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm. 7 _7 Y2 Y8 ?; u4 q 芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。 Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.) ; w$ s/ S) 9 q8 . m& 边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。） Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer. : F8 ? z2 B# 8 m$ S C6 W 名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离。 Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically. ! M v ?2 g# B- s0 E1 $ k 边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。 , L: s. e$ z2 H. 7 k9 Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials. 蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。 % S6 n o8 l T. v E Fixed Quality Area (FQA) - The area that is most central on a wafer surface. 2 o. I( g, V) T! u$ M 质量保证区(FQA) - 晶圆片表面中央的大部分。 8 8 % V k! D8 E! J* C, g Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes. N1 Q Q* A 平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。 ) E( k3 L/ c9 l+ K Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat) 平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。 4 6 ! 8 z3 f4 Z Four-Point Probe - Test equipment used to test resistivity of wafers. 四探针 - 测量半导体晶片表面电阻的设备。 Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process. 1 Y+ R+ z& J2 w 炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。 H F7 F2 S1 $ x9 M/ I Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.) 正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。 6 a9 S( W6 P7 s. B6 ( s/ A) p. g Goniometer - An instrument used in measuring angles. 角度计 - 用来测量角度的设备。 ! j+ S3 T; Q, v T( | X Gradient, Resistivity (not preferred; see resistivity variation) ; m N( ?5 M# k( ? E( 8 j) a 电阻梯度 （不推荐使用，参见“电阻变化”） Groove - A scratch that was not completely polished out. # 2 y0 D: D4 1 p G 凹槽 - 没有被完全清除的擦伤。 ) B Z: c Q, H$ D Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes. ( O$ x$ e5 B- J# S 手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。 Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer. 4 h: N( K) q * d, R5 N r 雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。 Hole - Similar to a positive charge, this is caused by the absence of a valence electron. 空穴 - 和正电荷类似，是由缺少价电子引起的。 Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。 8 3 Y/ l- ! T Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer. 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。 6 z7 E# O$ B1 W) _$ F8 t9 J Lay - The main direction of surface texture on a wafer. : g& V& X4 L* a w+ L! q 层 - 晶圆片表面结构的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) / m R+ Q) F9 U2 9 N3 O3 ( B5 s 光点缺陷(LPD) （不推荐使用，参见“局部光散射”） - & 0 T( m/ m1 _, y Lithography - The process used to transfer patterns onto wafers. 光刻 - 从掩膜到圆片转移的过程。 Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。 ; ; a- 1 1 L B$ D8 Z Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试的晶圆片。 Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m. - b S E. j) f7 N7 T 微粗糙 - 小于100微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. 6 t2 H+ g% i& m Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。 7 p o# v2 N+ s2 N# f. V Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。 Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。 * : o# P- w! J H2 e1 l5 U & V! e Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 8 g8 L K B6 I4 N( W5 p2 堆垛 - 晶圆片表面超过0.25毫米的缺陷。 Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。 Orange Peel - A roughened surface that is visible to the unaided eye. & X9 G4 L7 r$ X( x% J W- o s 桔皮 - 可以用肉眼看到的粗糙表面 Orthogonal Misorientation - 直角定向误差 - Particle - A small piece of material found on a wafer that is not connected with it. 颗粒 - 晶圆片上的细小物质。 3 I+ i# l( : b. P4 o2 Particle Counting - Wafers that are used to test tools for particle contamination. 7 |3 E* r/ m1 i; O4 ) C3 Y+ n5 1 j 颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。 Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer. 颗粒污染 - 晶圆片表面的颗粒。 9 w8 W. T( k5 m, A% E Pit - A non-removable imperfection found on the surface of a wafer. 6 b8 J& P$ Y! o& L z3 s/ l B/ G 深坑 - 一种晶圆片表面无法消除的缺陷。 Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 4 y% c4 t+ C. n3 u 点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。 - q! p$ u2 ?9 d2 w6 r* ?/ p Preferential Etch - 优先蚀刻 - Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer. 测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。 Primary Orientation Flat - The longest flat found on the wafer. 主定位边 - 晶圆片上最长的定位边。 Process Test Wafer - A wafer that can be used for processes as well as area cleanliness. * O$ 4 m* _% E I8 G 加工测试晶圆片 - 用于区域清洁过程中的晶圆片。 Profilometer - A tool that is used for measuring surface topography. / J y J) ! e 表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。 Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material. 3 A: T! , z9 6 V7 F; W b 电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。 2 M% 9 D W5 M! W0 | Required - The minimum specifications needed by the customer when ordering wafers. 6 M4 A0 H% _ : W* 5 l 必需 - 订购晶圆片时客户必须达到的最小规格。 Roughness - The texture found on the surface of the wafer that is spaced very closely together. 粗糙度 - 晶圆片表面间隙很小的纹理。 4 e9 T8 l% K8 _$ P2 Y Saw Marks - Surface irregularities 5 K4 w! C: s; ! T0 g 锯痕 - 表面不规则。 Scan Direction - In the flatness calculation, the direction of the subsites. 扫描方向 - 平整度测量中，局部平面的方向。 , 2 _$ | y+ I# b4 S, k! V Scanner Site Flatness - * a% u: t( N6 % / V 局部平整度扫描仪 - Scratch - A mark that is found on the wafer surface. 6 K) $ s+ S. m5 |* D+ / N 擦伤 - 晶圆片表面的痕迹。 Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer. 第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。 Shape - b B3 7 K D8 x) K9 v% b/ E 形状 - Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。 Site Array - a neighboring set of sites 局部表面系列 - 一系列的相关局部表面。 Site Flatness - 局部平整 - ) N% X, q# Q) ! : L Slip - A defect pattern of small ridges found on the surface of the wafer. 划伤 - 晶圆片表面上的小皱造成的缺陷。 7 o d% E! O- w G0 y Smudge - A defect or contamination found on the wafer caused by fingerprints. 污迹 - 晶圆片上指纹造成的缺陷或污染。 5 6 t/ x8 Z. d Sori - ( n# A7 S7 o) N3 4 z% Z Striation - Defects or contaminations found in the shape of a helix. ; T6 B+ O9 Y7 T1 Y, h 条痕 - 螺纹上的缺陷或污染。 3 y n* O; o) e5 H1 Z3 A Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site. 局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。 Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface. 表面纹理 - 晶圆片实际面与参考面的差异情况。 & X C9 f5 z) ?. O, Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 测试晶圆片 - 用于生产中监测和测试的晶圆片。 - a: J x* e9 ) Z& R C# Z Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。 $ |5 d; N* ( L; W+ * n Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. # L$ R, D Q W 顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。 $ W8 b/ q _ V* K% P: D Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer. & Q5 e/ V: r, n/ O 总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。 7 Z) A) A, f; A4 f+ O1 O R Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes. : U, ?8 Z- A& n5 v; S. w 原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。 Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding. & E4 Q # S8 _* 0 F2 , J 无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。 7 y1 e0 b8 j8 | Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye. * |) e% T. R( k* G! G( Y 波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。 Waviness - Widely spaced imperfections on the surface of a wafer. ; r% p9 C. U: + E 波纹 - 晶圆片表面经常出现的缺陷。 - e+ K& U: 2 v1 b 1. acceptance testing (WAT: wafer acceptance testing)2. acceptor: 受主，如B，掺入Si中需要接受电子3. ACCESS：一个EDA（Engineering Data Analysis）系统, 9 N/ B% y/ h5 4. Acid：酸5. Active device：有源器件，如MOS FET（非线性，可以对信号放大）; s3 c0 m; q- k6. Align mark(key)：对位标记7. Alloy：合金8. Aluminum：铝1 A3 R! P3 b+ O6 M9. Ammonia：氨水3 b1 C9 U( ?9 F3 d7 W0 g10. Ammonium fluoride：NH4F11. Ammonium hydroxide：NH4OH% M, * |3 e; c& l& C: h% p6 g12. Amorphous silicon：-Si，非晶硅（不是多晶硅）13. Analog：模拟的14. Angstrom：A（1E-10m）埃, W# K+ R# o6 n5 M4 M; b; T0 _, p15. Anisotropic：各向异性（如POLY ETCH）5 D7 T X) t9 # h J L16. AQL(Acceptance Quality Level)：接受质量标准，在一定采样下，可以95%置信度通过质量标准（不同于可靠性，可靠性要求一定时间后的失效率）17. ARC(Antireflective coating)：抗反射层（用于METAL等层的光刻）2 + 0 k) L: r18. Antimony(Sb)锑19. Argon(Ar)氩8 A7 v1 l5 r N5 0 20. Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷; C4 Y3 k! P5 C22. Arsine(AsH3)4 | k( + r) v+ 23. Asher：去胶机( L: H, F0 O* Q( D% P24. Aspect ration：形貌比（ETCH中的深度、宽度比）7 R1 Y$ V8 b9 H25. Autodoping：自搀杂（外延时SUB的浓度高，导致有杂质蒸发到环境中后，又回掺到外延层）26. Back end：后段（CONTACT以后、PCM测试前）27. Baseline：标准流程% v/ X1 D4 ) L h1 |8 a$ ?& + H28. Benchmark：基准29. Bipolar：双极 K/ Y# D$ 2 P( j/ Z+ U8 s. B30. Boat：扩散用（石英）舟31. CD： （Critical Dimension）临界（关键）尺寸。在工艺上通常指条宽，例如POLY CD 为多晶条