电子信息工程专业英语教程（第5版） 课件 Lesson 02 Memory Devices

Unit

1ElectronicDevices

Lesson2MemoryDevices《电子信息工程专业英语教程（第5版）》Lesson2MemoryDevicesBackgroundsTexttour

LanguageinuseVocabularyStructureReading/writingtechniques2024/5/292TerminologyMOS,PMOS,NMOS,CMOSFlip-flop,RegisterSRAM,DRAM,ROM,EEPROMCAMCacheFerroelectric

Backgrounds2024/5/293Terminology

2024/5/294MOS:Metal-oxidesemiconductor

金属氧化物半导体PMOS:p-typeMetal-oxidesemiconductor p型金属氧化物半导体NMOS:n-typeMetal-oxidesemiconductor n型金属氧化物半导体CMOS:ComplementaryMetal-Oxide-Semiconductor

互补金属氧化物半导体MOS,PMOS,NMOS,CMOS2024/5/295CMOS是一类集成电路的总称。这种集成电路的输出结构由一个n型MOSFEF（金属氧化物半导体场效应晶体管）和一个P型MOSFET串联而成。因为n型和p型MOSFET是相互补偿的,所以也常常使用“互补”一词来说明这种集成电路。MOS,PMOS,NMOS,CMOS2024/5/296Aflip-flopisbasicallyabi-statecircuitinwhicheithera0or1statecanresides.Becauseofitssimplicity,theflip-flopisextremelyfast.Asabasicelement,theflip-flopisusedindigitalcircuitsandICs.Aflip-flopwillloseitsstatewhenthesupplyvoltageisremoved.Therefore,itisvolatile.触发器是一种存储“0”或“1”的双态电路。由于触发器结构简单，所以其速度极快。触发器是数字电路和集成电路中的基本部件。由于电源电压去掉后，触发器原有的状态就失去了，因此它是“易失的”。

Flip-flop,Register2024/5/297Aregisterisasetofflip-flopsinparallel.Typicallyaregisteris8,16,32or64bitswide.Oftenaregisterisusedtoholddata,addresspointers,etc.Aregisterisvolatileandveryfastjustliketheflip-flop.寄存器是一组并行触发器。寄存器的典型数据宽度为8位、16位、32位或者64位。寄存器常用于保存数据、地址指针等。和触发器一样，寄存器也是“易失”的，而且速度很快。Flip-flop,Register2024/5/298SRAM:StaticRandomAccessMemoryAnSRAMisanarrayofaddressableflip-flops.Thearraycanbeconfiguredassuchthatthedatacomesoutinsinglebit,4-bit,8bit,andetc.format.SRAMissimple,fastandvolatilejustliketheflip-flop,itsbasicmemorycell.静态随机存取存储器(SRAM)是一种可寻址的触发器阵列。该阵列可配置成1位、4位、8位等数据格式。它和它的基本存储单元触发器一样：结构简单、存取速度快、具有易失的特点。SRAM,DRAM,ROM,EEPROM2024/5/299DRAM：DynamicRandomAccessMemoryTheword´dynamic´indicatesthatthedataisnotheldinaflip-flopbutratherinastoragecell.Thedatainastoragecellmustberefreshed(readoutandre-written)regularlybecauseofleakage.动态随机存取存储器：“动态”这个词意味着数据不是保存在触发器当中，而是保存在一个存储单元中。由于存在泄漏，所以保存在存储单元中的数据必须定期更新（读出并重新写入）。SRAM,DRAM,ROM,EEPROM2024/5/2910ROM:ReadOnlyMemoryROMsarealsocalledmask-ROMsormaskprogrammedROMs.ThisisbecauseaROMneedstobeprogrammedbysettingitscellstoeither0or1atthetimeofmanufacture.

只读存储器：也叫做掩模ROM或者掩模编程ROM。这是因为在制造时就需要通过将存储单元置0或置1对其进行编程。

SRAM,DRAM,ROM,EEPROM2024/5/2911EEPROM：ElectricallyErasableProgrammableROMThismeansthatthechipcanbeprogrammedlikeanEPROM,butcanbeerasedelectrically.Asaresult,noUVsourceisrequired.EEPROM是指该类芯片可以像EPROM一样可编程，但使用的是电擦除的方法。这样，就不需要紫外线信号源了。

SRAM,DRAM,ROM,EEPROM2024/5/2912 CAMisalsoknownas"associativestorage".Itisamemorychipinwhicheachbitpositioncanbecompared.InregularDRAMandSRAMchips,thecontentsareaddressedbybitlocationandthentransferredtothearithmeticlogicunit(ALU)intheCPUforcomparison.InCAMchips,thecontentiscomparedineachbitcell,allowingforveryfasttablelookups.Sincetheentirechipiscompared,thedatacontentcanoftenberandomlystoredwithoutregardtoanaddressingschemewhichwouldotherwiseberequired.However,CAMchipsareconsiderablysmallerinstoragecapacitythanregularmemorychips.CAM:ContentAddressableMemory

2024/5/2913Thecacheisatemporarystorageareaforfrequently-accessedorrecently-accesseddata.Havingcertaindatastoredinacachespeedsuptheoperationofthecomputer.Therearetwokindsofcache:internal(ormemorycache)andexternal(ordiskcache).Internalcacheisbuiltintotheprocessor,andexternalcacheisonthemotherboard.Whenanitemiscalledfor,thecomputerfirstcheckstheinternalcache,thentheexternalcache,andfinallytheslowermainstorage.Cache2024/5/2914Ferroelectricispertainingtoaphenomenonexhibitedbycertainmaterialsinwhichthematerialispolarizedinonedirectionortheother,orreversedindirectionbytheapplicationofapositiveornegativeelectricfieldofmagnitudegreaterthanacertainamount.Thematerialretainstheelectricpolarizationunlessitisdisturbed.某些材料表现出的一种现象。当在这种材料上施加超过特定强度的电场时,该材料就在一个方向上极化或改变原极化的方向。只要不受干扰,这种材料就一直保持其极化状态。Ferroelectric2024/5/2915TexttourOutlineOverview(para.1,2)Flip-flop(para.3)Register(para.4)SRAM(para.5,6,7)DRAM(para.8,9)ROM(para.10,11)EEPROM(para.12)2024/5/2916TexttourTypePropertiesR/wNon-volatileSpeedCost/bitFlip-flopOne-bitregister.Usuallyusedasabasicbuildingblockindigitalcircuits.YesNoUltrafastVeryhighRegisterSetofflip-flopsholdingabyte,wordorlongword.UsedincomplexchipssuchasCPUs.YesNoUltrafastVeryhigh2024/5/2917TexttourTypePropertiesR/wNon-volatileSpeedCost/bitSRAM

Arrayofflip-flopsthatisaddressable.Usedfortemporarystorageofdataorcache.YesNoVeryfasthighDRAM

Arrayofstoragecellswhichisaddressable.Usedformaincomputingdatastorage.YesNofastModerate2024/5/2918TexttourTypePropertiesR/wNon-volatileSpeedCost/bitROMArrayofhard-wiredcellsthatisaddressable.Programmingdoneattimeofchipmanufacture.NoYesVeryfastlowE2PROM

ElectricallyerasableprogrammableROM.Numberofwritecyclesislimited.YesYeslowhigh2024/5/2919Vocabularystatic，dynamic，approach，offset,pattern,hybrid

,indicate

Structure

Reading/writing

techniquesLanguageinuse2024/5/2920Vocabulary2024/5/2921Havingnomotion;beingatrest;quiescent.

静止的；静态的Fixed;stationary.

固定的；不动的Of,relatingto,orproducingstationarycharges;electrostatic.

静电的Of,relatingto,orproducedbyrandomradionoise.

随机无线电噪声的Randomnoise,suchascracklinginareceiverorspecksonatelevisionscreen,producedbyatmosphericdisturbanceofthesignal.

随机噪声Static,dynamic

indictionary

2024/5/2922Oforrelatingtoenergyortoobjectsinmotion.

动态的Oforrelatingtothestudyofdynamics.

动力学的Characterizedbycontinuouschange,activity,orprogress:

不断变化的Markedbyintensityandvigor;forceful.

生气勃勃的;有力的Oforrelatingtovariationofintensity,asinmusicalsound.

强度变化的Aforce,especiallypolitical,social,orpsychological:

动力Static,dynamic

indictionary

2024/5/2923SRAM(StaticRandomAccessMemory)

静态随机存取存储器DRAM(DynamicRandomAccessMemory)

动态随机存取存储器Static,dynamic

intext

2024/5/2924staticelectricity静电staticinduction静电感应staticcontrolcircuit静态控制电路staticamplifier静态放大器dynamiccircuit动态电路dynamiccapacity动态电容Static,dynamic

inuse2024/5/2925Tocomenearornearer,asinspaceortime:

接近Tocomeorgonearornearerto:接近，靠近Tocomecloseto,asinappearance,quality,orcondition;approximate:近乎,接近Theperformanceapproachesperfection.Tomakeaproposaloroverturestowithaspecificendinview:

提议：Tobegintodealwithorworkon:

着手,开始处理approachedthetaskwithdread.Approachindictionary

2024/5/2926Theactofapproaching:

接近theapproachofnight.夜幕降临Afairlycloseresemblance;anapproximation.

近似；接近Awayormeansofreachingsomething;anaccess:

途径,方法,通路anapproachtothebridge.通向桥的路Themethodusedindealingwithoraccomplishing:

步骤,方法：alogicalapproachtotheproblem.对问题的逻辑解决步骤Anadvanceoroverturemadebyonepersontoanother.

提议，建议Approachindictionary

2024/5/2927WithDRAMtechnology，thissimpleapproachisimpossiblesinceaddressingarowofdatawithoutrewritingitwilldestructalldataintherowbecauseofthedynamicnature.对于DRAM存储器，这种简单的存取方法式是不可行的；由于动态的特点，读出一行数据而不再次将其写入会破坏该行内所有的数据。Approachintext

2024/5/2928attheapproachof在...快到的时候beapproaching(to)与...差不多,大致相等bedifficultofapproach难到达的;难于接近的beeasyofapproach容易到达的;容易接近的makeanapproachto对...进行探讨makeapproachestosb.设法接近某人approachsb.onsth.向某人接洽approachsb.aboutsth.向某人接洽approachto接近,近似,约等于;做事的方法Approachinuse2024/5/2929Approachtosth./doingsth.Waytodosth./ofdoingsth.Methodfordoingsth.Approachinuse2024/5/2930Anagent,anelement,orathingthatbalances,counteracts,orcompensatesforsomethingelse.

补偿物、抵消物、中和物Thenumberofmeasuringunitsfromanarbitrarystartingpointinarecord,area,orcontrolblock,tosomeotherpoint.

偏移量Tocounterbalance,counteract,orcompensatefor:

平衡、中和或补偿：fringebenefitsdesignedtooffsetlowsalaries.

用以补偿低工资的额外福利Offsetindictionary

2024/5/2931Thedisadvantageoftheextracircuitryrequiredforrefreshingiseasilyoffsetbythelowerpriceperbitwhenusinglargememorysizes.当所需存储量很大时，数据更新需要额外电路这个缺点很容易就被较低的位价格弥补了。Offsetintext

2024/5/2932zerooffset零(点)偏移lineoffset行偏移Offsetbinarycode偏移二进制编码Offsetinuse2024/5/2933Amodeloranoriginalusedasanarchetype.

原型Apersonorthingconsideredworthyofimitation.

模范，榜样Aplan,diagram,ormodeltobefollowedinmakingthings:

图案，模型、图纸或图形：adresspattern.服装式样Arepresentativesample;aspecimen.

样品，标本Anartisticordecorativedesign:

（艺术或装饰的）图案式样：Patternindictionary

2024/5/2934Aconsistent,characteristicform,style,ormethod,as:one'spatternofbehavior.一个人的行为特点Atestpattern.考试模式aflightpattern.飞行着陆道Patternindictionary

2024/5/2935Thisaluminumpatternisdefinedbyalithographicmaskusedinoneofthelaststepsofmanufacture.Thereforethesedevicesareoftencalledmask-ROMs.铝层图案是在芯片制造的最后一道工序中由一块掩模平板决定的。所以，该类器件常被称作掩模ROM。

Patternintext

2024/5/2936模式Aphysicalarrangementofelementsabitpattern二进制位模式adot-matrixpattern点矩阵模式astoragepattern存储模式Repeatingwithsome

degreeofcorrespondencein

successivetrialsorobservationsapatternofmessagetraffic报文流量模式apatternofhardwarefailures硬件故障模式Patterninuse2024/5/2937bitpattern位组合格式beatpattern拍频波形图chargepattern电荷分布图circuitpattern(印刷电路)电路图案Patterninuse2024/5/2938Atermsometimesappliedtoa“composite”device;toadeviceincorporatingmultipleelementsofdifferenttype.

用来说明一种“复合型”器件;或修饰由多个不同类型的元件组成共同工作的器件。

Acommonshortformusedfor“hybridcircuit”and“hybridnetwork”mainlyintheplural. “混合电路”和“混合网络”的缩写。Hybrid

indictionary

2024/5/2939FastcachememorycanbeconstructedinBiCMOStechnology,ahybridtechnologythatusesbipolartransistorsforextradrive.高速缓存可以使用BiCMOS技术构建；BiCMOS是一种混合技术，它使用双极性晶体管作为附加的驱动。Hybridintext

2024/5/2940Combinedadj.组合的,结合的combinedcircuit组合电路combinedcolorimage组合彩色图象Compositeadj.合成的,复合的compositemodulation复合调制compositecoding合成编码Hybridinuse2024/5/2941Toshow