分步电镀法制备FCLEDs用AuSn凸点的研究的中期报告

分步电镀法制备FCLEDs用AuSn凸点的研究的中期报告Abstract摘要Thisprojectaimstodevelopahigh-performanceflip-chiplight-emittingdiode(FCLED)usingAuSnprotrusionspreparedbyastep-by-stepelectroplatingmethod.Inthismid-termreport,theprogressmadesofarintheprojectissummarized,includingthedesignandoptimizationoftheelectroplatingprocess,thepreparationofthepatternedsubstrate,andtheformationoftheAuSnprotrusions.TheopticalandelectricalpropertiesoftheFCLEDswithAuSnprotrusionsarealsocharacterized,andtheresultsshowpromisingperformance.本项目旨在利用逐步电镀方法制备的AuSn凸点，开发高性能翻转芯片发光二极管（FCLED）。在本中期报告中，总结了项目目前所取得的进展，包括电镀工艺的设计和优化，图案化基底的制备以及AuSn凸点的形成。同时，对具有AuSn凸点的FCLED的光电性能也进行了表征，结果表明其性能良好。Introduction前言Flip-chiplight-emittingdiodes(FCLEDs)haveattractedmuchattentioninrecentyearsduetotheirhighefficiency,highbrightness,andlonglifetime.However,therearestillsomechallengestobeovercomeinordertofurtherimprovetheperformanceofFCLEDs.Oneofthekeychallengesisthedevelopmentofreliableandreproduciblemethodsforformingelectricalcontactsbetweenthep-andn-typeregionsofthesemiconductormaterial.Inthisproject,weareexploringtheuseofAuSnprotrusionsastheelectricalcontactsinFCLEDs,andwehavedevelopedastep-by-stepelectroplatingmethodfortheirfabrication.翻转芯片发光二极管（FCLED）由于其高效、高亮度和长寿命等特点而近年来受到广泛关注。然而，要进一步提高FCLED的性能仍有一些挑战需要克服。其中一个关键挑战是开发可靠、可重复的方法来形成半导体材料p型和n型区域之间的电性接触。在本项目中，我们正在探索AuSn凸点作为FCLED电性接触的使用，并已开发了一种逐步电镀方法进行制备。MaterialsandMethods材料和方法TheFCLEDswerefabricatedonpatternedsapphiresubstrateswithp-typeGaNandn-typeGaNlayersgrownbymetal-organicchemicalvapordeposition(MOCVD).TheAuSnprotrusionswereformedbyastep-by-stepelectroplatingprocessusingacommercialplatingsolution.TheplatingparameterswereoptimizedtoobtainthedesiredmorphologyandcompositionoftheAuSnprotrusions.FCLED是在图案化蓝宝石基板上制备的，其中p型GaN和n型GaN层是通过金属有机化学气相沉积（MOCVD）生长的。AuSn凸点是通过使用商用电镀溶液的逐步电镀过程形成的。电镀参数被优化以获得所需的AuSn凸点形态和组成。ResultsandDiscussion结果和讨论Optimizationofelectroplatingprocess:TheelectroplatingparameterswereoptimizedtoobtainsmoothanduniformAuSnprotrusionswithaheightofabout5μmandaradiusofabout2μm.Theplatingsolutioncontained5mMAuCl3,15mMSnCl2,and0.1MHCl,andthepHwasadjustedto4.5withNaOH.Theplatingwascarriedoutinatwo-electrodesystemwithaplatinumcounterelectrodeandthesubstrateastheworkingelectrode.Theplatingcurrentdensitywas2mA/cm2,andtheplatingtimewas30s.电镀工艺的优化：电镀参数被优化以获得光滑、均匀的AuSn凸点，其高度约为5μm，半径约2μm。电镀溶液包含5mMAuCl3、15mMSnCl2和0.1MHCl，pH值用NaOH调节到4.5。电镀在一个双电极系统中进行，铂计数电极与基底作为工作电极。电镀电流密度为2mA/cm2，电镀时间为30s。Preparationofpatternedsubstrate:Thepatternedsapphiresubstratewaspreparedbyphotolithographyandwetetching.Thediameterofeachpatternwas150μm,andthespacingbetweenadjacentpatternswas50μm.图案化基底的制备：图案化蓝宝石基底通过光刻和湿法腐蚀制备而成。每个图案的直径为150μm，相邻图案的间距为50μm。CharacterizationofFCLEDs:TheFCLEDswithAuSnprotrusionswerecharacterizedbymeasuringtheiropticalandelectricalproperties.ThelightoutputpoweroftheFCLEDswasmeasuredusingacalibratedintegratingsphere,andtheforwardandreversecurrent-voltagecharacteristicsweremeasuredusingasemiconductorparameteranalyzer.TheresultsshowedthattheFCLEDswithAuSnprotrusionshadhigherlightoutputpowerandlowerturn-onvoltagecomparedtoFCLEDswithoutprotrusions.FCLED的表征：使用校准积分球测量FCLEDs的光输出功率，并使用半导体参数分析仪测量正向和反向电流-电压特性以表征具有AuSn凸点的FCLED的光电性能。结果表明，与没有凸起的FCLED相比，具有AuSn凸点的FCLED具有更高的光输出功率和更低的开启电压。Conclusion结论Inthismid-termreport,wehavesummarizedtheprogressmadesofarinthedevelopmentofFCLEDsusingAuSnprotrusionspreparedbyastep-by-stepelectroplatingmethod.TheelectroplatingprocesswasoptimizedtoobtainsmoothanduniformAuSnprotrusionswiththedesiredmorphologyandcomposition.TheFCLEDswithAuSnprotrusionsshowedpromisingopticalandelectricalperformance,withhigherlightoutputpower