笔记本维修学习芯片数据手册ap9936m

Electronics ▼DualN-channelDevice ▼SurfaceMount

S1G1 TheAdvancedPowerMOSFETsfromAPECG1 AbsoluteumV±VContinuous 5AContinuous 4APulsed ATotalPower2WLinearDeratingStorageTemperature-55to℃-55to℃ DataandspecificationssubjecttochangewithoutTestVGS=0V,--VReferenceto25℃,--StaticDrain-Source VGS=10V,--VGS=4.5V,--VGS(GateThresholdVDS=VGS,1-3VForwardVDS=15V,-6-SVDS=30V,--1VDS=24V--VGS=±--TotalGate----Gate-Drain("Miller")--Turn-onDelay--Rise--Turn-offDelay--Fall--Input--Output--ReverseTransfer--TestVD=VG=0V,--AForwardOnTj=25℃,IS=1.7A,--VPulsewidthlimitedbyMax.junctionPulsewidth<300us,dutycycleSurfacemountedon1in2copperpadofFR4board;135℃/WwhenmountedonMin.copperID,ID,DrainCurrentID,DrainCurrent 0 VDS,Drain-to-SourceVoltage

0 VDS,Drain-to-SourceVoltageFig1.TypicalOutput Fig2.TypicalOutputIDIDNormalizedNormalizedRDS(ON)RDS(ON)1

VGS Tj,JunctionTemperature(oFig3. v.s.Gate Fig4.Normalizedv.s.Junction 26IDID,DrainCurrent120

0

Tc,CaseTemperature(o Tc,CaseTemperature(oFig5.umDraurrent Fig6.TypicalPowerCase NormalizedNormalizedThermalResponse

VDS t,PulseWidthFig7.umSafeOperating Fig8.EffectiveTransientThermal

VGSVGS,GatetoSourceVoltage8CC420 QG,TotalGateCharge

VDSFig9.GateCharge Fig10.TypicalCapacitanceToCToCoC210

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VSD Tj,JunctionTemperature(oCFig11.ForwardCharacteristic Fig12.GateThresholdVoltageReverse JunctionDTOTHEG05xRATED+S5- td(off)Fig13.SwitchingTime Fig14.SwitchingTimeDTOTHE05xRATEDGS+1~3-Fig15.GateCharge Fig16.GateChargeAP9936MNElectronicsCorp.MOSFETVDS30VVGS20VID@TA=25℃35AID@TA=70℃34AIDM140APD@TA=25℃2W0.016TSTG55150TJ55150Rthj-amb362.5℃/WBVDSSVGS=0VID=250uA--ΔBVDSS/ΔTj击穿电压温度系数参考25℃,ID=1mA-0.037-V/℃RDS(ON2VGS=10V,ID=5A50mΩVGS=4.5V，ID=3.9A--80mΩVGS(thVDS=VGS,ID=250uA13VgfsVDS=15V,ID=5A6SIDSS漏源漏电流(Tj=25oC)VDS=30V,VGS=0V--1uA漏源漏电流(Tj=70oC)VDS=24V,VGS=0V25uAIGSSVGS=20V100nAQg2VDS=15VVGS=5V6.1nCQgs1.4nCQgd（“Miller”）电3.3nCtd(on)2VDS=15VID=1.5ARG=3.3Ω，VGS=10VRD=10Ω6.7nstr6.4nstd(off)22.1nstf2.1nsVGS=0VVDS=25Vf=1.0MHz240pFCoss145pFCrss-55-pFIS（体二极管）VD=VG=0VVS=1.2V1.67AVSD2Tj=25℃,IS=1.7AVGS=0V1.21.2.脉冲宽度<300us，占空比<2%3.TC=2510V8.0V5.0VID，漏极电流00VDS1.213.4.RDS(ON)IDA)86ID(AID(A)2010.00010.0010.010.11101000.11VDSV)t7.