学习芯片数据手册ap90t03h

Electronics▼LowerOn-DGS▼SimpleDriveDGS▼FastSwitchingTheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP90T03J)isavailableforlow-profileapplications.

G AbsoluteumVV urrent,VGS@A urrent,VGS@A ATotalPowerW-55to℃-55to℃Thermal Data&specificationssubjecttochangewithoutTestVGS=0V,--VReferenceto25℃,-- VGS=10V,--4VGS=4.5V,--6VDS=VGS,-3VVDS=10V,--SVDS=30V,--1VDS=24V,--VGS=-------Rise--Turn-offDelay--Fall--Input-Output----TestForwardOnIS=45A,--VIS=30A,----Pulsewidth<300us,dutycycleTCTC=150o75VGIDID,DrainCurrentID,DrainCurrent

VDS,Drain-to-SourceVoltage VDS,Drain-to-SourceVoltageFig1.TypicalOutput Fig2.TypicalOutputVGNormalizedNormalizedRDS(ON)RDS(ON)

VGS,Gate-to-SourceVoltage Tj,JunctionTemperature(oFig3.On-v.s.Gate Fig4.Normalizedv.s.JunctionIsVGS(th)IsVGS(th)

VSD,Source-to-DrainVoltage Tj,JunctionTemperature(oFig5.ForwardCharacteristic Fig6.GateThresholdVoltageReverse JunctionVGSVGS,GatetoSourceVoltage

IDID=40VDS=15VVDSVDSC

QG,TotalGateCharge

VDS,Drain-to-SourceVoltageFig7.GateCharge Fig8.TypicalCapacitanceNormalizedThermalResponseNormalizedThermalResponseIDID

VDS,Drain-to-SourceVoltage t,PulseWidthFig9.umSafeOperating Fig10.EffectiveTransientThermalFig11.SwitchingTime Fig12.GateChargeAP90T03H/JNElectronicsCorp.MOSFETBVDSS30VRDS(ON4mΩID75ATO-252GDSTO-DC/DC(AP90T03J)GDSTO-VDS30VVGS20VID@TC=25℃连续漏极电流，VGS@4.5V75AID@TC=100℃VGS@4.5V63AIDM1350APD@TC=25℃总功耗96W线性降额系数0.7W/℃TSTG55150TJ55150Rthj-c1.3/WRthj-a110℃/WBVDSSVGS=0VID=250uA--ΔBVDSS/ΔTj击穿电压温度系数参考25℃,ID=1mA-0.015-V/℃RDS(ON)静态漏源导通电阻2VGS=10V,ID=45A--4mΩVGS=4.5V，ID=30A--6mΩVGS(thVDS=VGS,ID=250uA0.83VgfsVDS=10V,ID=30A55SIDSS漏源漏电流(Tj=25oC)VDS=30V,VGS=0V--1uA漏源漏电流(Tj=150oC)VDS=24V,VGS=0V--250uAIGSS栅源漏电流VGS=±20V--±100nAQg2ID=40AVDS=24VVGS=4.5V6096nCQgs8.5nCQgd（“Miller”）充38nCtd(on)2VDS=15VID=30ARG=3.3Ω,VGS=10VRD=0.5Ω14nstr83-nstd(off)关断延迟时间-66-nstf下降时间-120-nsCiss输入电容VGS=0VVDS=25Vf=1.0MHz-40906540pFCoss输出电容-1010-pFCrss反向传输电890pFVSD2IS=45A，VGS=0V1.3VtrrIS=30A，VGS=0V，51nsQrr电荷dI/dt=100A/μs-63-nC1.2.脉冲宽度<300us，占空比<2%。Is(A)IDRDS(ON(mΩ)TC25oC107.0V电压4.5VVG=3.0VTC=150℃VGS(th(V)RDS(ON)ID，(A)001230VDS(V)VDS1.20.024681012-500VGS(V)Tjo3.42ID=20ATC=25