IC制造流程简介课件

IC制造流程简介

ANDY相关定义半导体是指导电能力介于导体和非导体之间的材料，其指四价硅中添加三价或五价化学元素而形成的电子元件，它有方向性可以用来制造逻辑线路使电路具有处理资讯的功能。半导体的传导率可由搀杂物的浓度来控制：搀杂物的浓度越高，半导体的电阻系数就越底。P型半导体中的多数载体是电洞。硼是P型的掺杂物。N型半导体的多数载体是电子。磷，砷，锑是N型的搀杂物。相关定义集成电路是指把特定电路所需的各种电子元件及线路缩小并制作在大小仅及2CM平方或更小的面积上的一种电子产品。WaferStartCMPOxidationPVD,

CVDWaferCleaningPhotolithographyEtch(DryorWet)AnnealingImplantationTheOutlineWaferStartCMPWaferCleaning製程TheIntroductiontoTheManufacturingProcessof

VLSI

ANDYMeltSeedGraphiteCrucibleGrowingCrystalNoncontaminatingLiner(a)Seedbeinglowereddowntomelt(b)Seeddippedinmeltfreezingonseedjustbeginning(b)PartiallygrowncrystalTheCzochralskiMethod-1(a)As-growncrystal(b)Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange(c)Sawintoslices(withorientingflatsgroundbeforesawing)(d)Roundedgesofslicebygrinding(e)PolishsliceCrystaltoWafe微影(Photolithography)原理：

在晶片表面上覆上一層感光材料，來自光源的平行光透過光罩的圖形，使得晶片表面的感光材料進行選擇性的感光。

感光材料：

正片－經過顯影(Development)，材料所獲得的圖案與光罩上相同稱為正片。

負片－如果彼此成互補的關係稱負片ContinueWaferWaferWaferDevelopresistEtchoxideStripresistDevelopedresistshowingpatternEtchtomatchresistpatternResistremovedPhotolithographyProcess-2Doping:

Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmay causetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.IntroductiontoDopingDopingmethods:1.Diffusion2.IonImplantationPre-deposition:

Toputtheimpuritiesonthewafersurface.Generallyuseddopantresourcefurnacedesign:CarriergasHeaterQuartztubeSoliddopantsourcefurnaceO2LiquiddopantsourceCarriergasGasdopantsourceValveO2(a)(c)(b)DiffusionProcess

-1Soliddopantsource1.Thedefinition:

Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions.2.Thepurpose:

Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant.3.Energyrange(8yearsago)

(1)Generalprocess：10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess：10KeV-3MeV(<0.5m) (3)R&Dprocess：0.2KeV-5KeVIntroductiontoIonImplantationDopantSourceIonSourceMassAnalysisAcceleratorScannerElectronShowerIonImplanterExtractorFaradyCapParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrolFactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent(FaradyCup)DopingParametersChemicalVaporDeposition(a)Reagentsdiffusethroughtheinterfaceboundarylayer(b)Adsorbedontothewafersurface(c)Depositionreactionhappens(d)Byproductsdiffusethroughtheinterfaceboundarylayer(e)Reagents&byproductspassawayHeatSource(a)(d)(b)(c)(e)ReactionMainStream

InterfaceBoundaryLayerWafersurfaceVacuumSystem(1)ThermalOxidation

Thegrowthtemperature

isabove9000C.HighqualitySiO2.

(2)LowPressureCVD(LPCVD)Thegrowthtemperatureisaround400

0C

to750

0C.Betterstepcoverageability.

(3)PlasmaEnhancedCVD(PECVD)

Thegrowthtemperatureisunder400

0C.

InthecaseoftheAldepositionandnon-thermalprocess.

SolutionstoDepositionDownForcewaferWaferCarrierCarrierFilmSlurryCarrierWaferInterconnectsCompositePadTablePolishingPadPolishingtablepCMPSystemSchematicCarrierFilmcSlurryParticle(0.1~2.0um)Silica(Colloidal)

Alumina(Dispersed)Liquor(ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP)KOHNH4OHWaferCleaningPurpose:

ToremovetheremainsandimpuritiesMethods:BrushCleaningSprayCleaningUltrasonicCleaningPhotoresistSiO2SiSubstratePhotoMaskPositiveResistNegativeResistEtchingIntro-1NextPageEtchingMethods

WetEtching(Isotropic)

RelativelysimpleprocessHighthroughputLowquality

DryEtching(Anisotropic)

Highquality(duetotheexcellentpatterntransferability)WorseselectivityWetEtchingSubstrateThinFilmSolutionBoundaryLayerReagentResultantReactionPhotoResist(a)IsotropicEtching：A=0(Erh=Erv)(b)AnisotropicEtching：A=1(Erh=0)Isotropic&AnisotropicQuartzdomeSiliconwaferSiliconcarbidecoatedgraphiteRFCoilGasinGasexitSiliconcarbidesusceptorGasexitSiliconwafersRFinductionheatingcoilDryEtchingSystem-1(a)SputteringEtching(b)PlasmaEtching(c)ReactiveIonEtchingIonReactiveIonVolatileProductVolatileProductReactiveIonRIESchemeDiagramof

RIESystemGasInToVacuumPumpPlasmaElectrodeRFAnnealingSiO2PostIonImplantationAnnealingRTPFurnaceReactionRoomGasin(H2)Wafer3-ZoneHeatingElementGasoutGasin(O2)Lo