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DCVDProcessIntroductionWhat’sDCVD?CVDcomponentCVDProcessapplicationCVDfilmindexComponentsofCVDsystemsWhat’sDCVD?DCVDmechanismDCVDprocessapplicationDCVDfilmcharacteristic&indexSACVDPECVDHDPCVD
DCVDProcessIntroductionDCVDProcessIntroductionWhatWhat’sDCVD?DCVD
Theprocessofdepositingsolidfilmsusingvapororgasesasthesourcematerial.Thesesolidfilmsareusedforinsulationbetweensemiconductorlayers.DielectricAmaterialthatconductsnocurrentwhenavoltageisappliedtoacrossit.OxideandNitridesaredielectricmaterials.Chemical
Thereisachemicalreactionatthewafersurfaceasfilmisdeposited.Vapor
Thereactantareeithergasesorvapor.DepositionAsolidfilmisdepositedonthesurfaceofthewaferasaproductofthereactionbetweensourcegasesWhat’sDCVD?DCVDComponentsofCVDsystemComponentsofCVDsystemCVDprocessdescriptionA).Gas/VaporphaseprecursorsintothereactorB).PrecursorsdiffuseacrosstheboundarylayerC).PrecursorsadsorbonthesubstrateD).AbsorbedprecursorsmigrateonthesubstrateE).ChemicalreactiononthesubstrateF).ByproductdesorptionsG).ByproductdiffuseacrosstheboundarylayerH).Byproductoutofreactor(A)(B)(C)(D,E)(F)(G)(H)BoundarylayerCVDprocessdescriptionA).GasDCVDProcessSilaneprocess:
Oxide:SiH4+N2O plasma&heat SiOx+N2+H2+H2O+othervolatilesSiH4+O2SiOx+H2+H2O+othervolatilesNitride:SiH4+N2+NH3
plasma&heat SiNxHy+othervolatilesSION
SiH4+N2O plasma&heat SiOxNy+N2+H2+H2O+othervolatilesSilaneprocesschambercleanNF3+SiO2plasma&heatSiF4+N2+othervolatilesNF3+SiNplasma&heatSiF4+N2+othervolatilesplasma&heatDCVDProcessSilaneprocess:plaDCVDProcessOzoneTEOSProcess:USGO3 heat O2+OO+Si(OC2H5)4
plasma&heatUSG+volatileorganicsPSGO+TEOS+TEPOheatPSG+volaticorganicsBPSGO+TEOS+TEPO+TEBplasma&heatBPSG+volatileorganicsTEOSchambercleanC2F6+NF3+SiO2
plasmaSiF4+CO+N2+othervolatileDCVDProcessOzoneTEOSProcessSurfaceAdsorption
SubstratesurfaceChemisorbedprecursorPhysisorbedprecursorBondingEnergySurfacedistanceChemisoptionStrongbondingenergyprecursor&surfaceVerylowsurfacemobility&badstepcoverageSiH4gasPhysisoptionWeakbondingenergyprecursor&surfaceHighsurfacemobility&goodstepcoverageTEOSgasSurfaceAdsorptionSubstratesDCVDApplicationin18LGShallowTrenchIsolation(STI)Anti-reflectedCoating(DARC)PremetalDielectric(ILD)IntermetalDielectric(IMD)PassivationDielectric(PASS)1.5kÅSRO+6kASINMet1Met2Met3Met4Met5Met6Gox38Å(El.)0.15m0.15m0.35mPoly2kÅSiON400ÅILD7.5kÅCOSiIMD19.0kÅIMD29.0kÅIMD39.0kÅIMD49.0kÅIMD510.5kÅHDP10.0kÅSiN+SRO7.5kÅ8.7kÅ4.8kA4.8kÅ4.8kÅ4.8kÅ4.8kÅ10kÅHDPDCVDApplicationin18LGShalloDielectricfilmcharacteristics
RefractiveIndex(R.I.)SpeedoflightinavacuumSpeedoflightinthefilmR.I.=Surfaceinterfaceθ2
θ1Vacuumn1Filmn2
n1sinθ1=n2sinθ2DielectricfilmcharacteristicSiO2=1.46,Si3N4=2.01,Air~1(Referenceλ=633nm)R.I.SOG
SiO2SROSiONUVSiNSiNDARCPoly
1.381.461.501.751.92.02.0~2.53.8~4.0Oxygen/NitrogenrichSiliconrichDielectricfilmcharacteristics
PECVDrefractiveindextrendSiO2=1.46,Si3N4=2.01Dielectricfilmcharacteristics
Depositedfilmthickness
Depositionrate=Depositedtime
Thicknessbeforewetetch-Thicknessafterwetetch
Wetetchrate=Wetetchtime
ThicknesschangeoftheCVDfilm
Wetetchrateratio=(WERR)Thicknesschangeofthethermaloxidefilm(A/min)DielectricfilmcharacteristicDielectricfilmcharacteristics
ThicknesschangeafterthermalcycleShrinkage=Standarddeviation(σ)(Non-)Uniformity=Meanvalue(
)Σ(XI-)2
σ=N-1Thicknessbeforethermalcycle
╳100%i=1~nX1+X1+…….+XNNDielectricfilmcharacteristicDielectricfilmcharacteristics
StressBarewaferCompressivestress(-)Tensilestress(+)Afterdeposition△L=α
△TL
α
Coefficientsofthermalexpansion(in10-6C-1)
SiO2=0.5 Si=2.5Si3N4=2.8 W=4.5Al=23.2DielectricfilmcharacteristicDielectricfilmcharacteristics
StresscalculatedE
Stress=(-)1-vh2
6t1
Rafter1
RbeforeSubstrateYoung’smodulusSubstratethicknessSubstratepossion’sratioFilmthicknessWafercurvatureradius*1Mpa=106Pa=107dynes/cm2DielectricfilmcharacteristicWhyUsingSABPTEOS?
Sub-atmosphericdopeTEB/TEPOwithTEOS/O3Goodgap-fillingcapabilityandPlanilization
forILDLayerTrapNa+LowerReflowTemperatureNonePatternSensitivityThroughputSACVD(Sub-AtmosphericCVD)WhyUsingSABPTEOS?SACVD(SubHardwareintroductionHardwareintroductionINTERLAYERDIELECTRIC(ILDScheme)PE-SION400ADEPSABP-TEOSDepositionBPSGFLOW PETEOSdepositionOxCMPforILDN-WellP-WellP+P+N+N+2KÅSABPSG10.5KÅPETEOS400ÅSINOINTERLAYERDIELECTRIC(ILDSchPECVD
SiH4+N2OplasmaSiOx(Hy)+othervolatiles(400C)SiH4+N2+NH3plasmaSiNx(Hy)+othervolatiles(400C)SiH4+N2O+NH3+N2
plasmaSiOxNy(Hz)+othervolatiles(400C)SiH4+N2O+He
plasmaSiOxNy(Hz)+othervolatiles(400C)WhyneedPECVD?LowtemperatureformetallizationprocessHighdepositionrateforWPHR.I.Adjustable(DARC,SRO)PECVD(PlasmaenhancedCVD)
PECVDPECVD(PlasmaenhancedCVPECVD(PlasmaenhancedCVD)
ACPECVD(PlasmaenhancedCVD)ACDielectricARCDARC:DielectricAnti-ReflectiveCoating
EliminatetheunwantedreflectionsbyphaseshiftcancellationofunwantedwavelengthPECVDOxynitride(SiH4+N2O+He→SiON)DielectricARCDARC:DielectriPECVDApplication(0.18Logic)
1.5kÅSRO+6kASINMet1Met2Met3Met4Met5Met6Gox38Å(El.)0.15m0.15m0.35mPoly2kÅCOSi4HDP10.0kÅSiN+SRO7.5kÅ6.8kÅ5.1kÅ5.1kÅ5.1kÅ5.1kÅ5.1kÅ10kÅHDPPESiONEtchstoplayerN-WellP-WellP+P+N+N+2kÅSABPSG10.5kÅPETEOSILDPETEOS10.5KMet1N-WellP-WellP+P+N+N+6.5kÅHDP11KAPEFSGIMDPEFSG11KPass.PESRO1.5K/PESIN6KPolyDARCMetalDARCContact/ViaDARCPECVDApplication(0.18Logic)WhyUsingHDP?
WhatistheHDP-CVD?=>HighDensityPlasma(HDP)isatypeofadvancedchemicalvapordeposition(CVD)technologyinwhichthedensityoftheinconventionalplasma-enhanced(PE)CVDtechnology.plasma(~1011-1012n/cm3)ishigherthanthatused
WhyweneedHDP-CVD?
=>HDP-CVDisconsideredaleadingtechnologyforthemostadvancedgap-fillingrequirementsin<0.35µmdesignrules.HDPCVD(HighDensityPlasmaCVD)
WhyUsingHDP?HDPCVD(HighDStepcoveragebacSidewallstepcoverage=b/aBottomwallstepcoverage=c/aAspectratio=h/sl:line,s:space
ArrivingangleStepcoveragetopressure&surfacemobilityrelativeoverhanghlsStepcoveragebacSidewallstepGapfill
TrapperprofileOverhangprofileNormalprofileVoidCM81SABPSGvoidissueGapfillTrapperprofileOverhaHDP-CVDConcept
Silaneoxidedepositingandargonionetchingbackatthesametime.Whendepositionandsputterrateareproperlyadjusted,theHDPchamberandprocessiscapableoffillingnarrowgapsfromthebottomupwithoxideofhighqualityandspatialuniformity.Gap-fillingcapabilitydependentonratioofdepositiontosputteringD/S=(netdepositionrate+blanketsputteringrate)/
(blanketsputteringrate)HDP-CVDConcept
Deposition=>DryEtching=>Deposition=>ContinuousProcessHDP-CVDConcept
Deposition=>DryEtching=>DHDP-CVDConcept
HDP-CVDConcept
IMDHDPgap-fillvsD/SHDP-CVDConcept
IMDHDPgap-fillvsD/SHDP-CVDHDP-CVDConcept
HDP-CVDConcept
HDP-CVDConcept
Howtocontrolwafertemperatureduringprocess?ESC(ElectrostaticChuck)
1)Largeionbombardmentcomponentgeneratesmuchheatonwafer.2)BacksideHecoolingisusedtoremovethisheat.3)Efficientcoolingrequiresgoodthermalcontact,henceelectrostaticchucking.IHC(IndependentHeliumCooling)
SupplybacksideHetocontrolwafertemperatureduringprocessHDP-CVDConceptLinerOX STEP-1: SPM+HF STEP-2: APM+HPM 1000C,DRYOX(200+-20A)HDPGapFill HDPCVDOX5.8KAWITHAR(+-500A) HDPCVDOXRTA STDCLEAN 1000C,20sec,N25800ÅHDP1625ÅNitride110ÅPADOxide200ÅLinerOxideHDPSTIHDPCVDApplication
LinerOX STEP-1: SPM+HF58006.5kÅHDPFSG&11kÅPEFSGdep Met1N-WellP-WellP+P+N+N+6.5kÅHDP11kÅPEFSGHDPIMD&HDPFSG(DopedSiF4)6.5kÅHDPFSG&11kÅPEFSGdep10kÅHDPoxidedepPE-SRO1.5KDEPPE-SIN6KDEPPDPhotoforbondpadHDPpassivationetchResistStripAlloy-410ºC,30’N-WellP-WellP+P+N+N+Met1Met2Met3Met4Met5Met61.5kÅSRO+6kASIN10kÅHDPHDPPassivation10kÅHDPoxidedepN-WellP-WellKeyParameters
KeyParametersThankyouQ&AThankyouQ&ADCVDProcessIntroductionWhat’sDCVD?CVDcomponentCVDProcessapplicationCVDfilmindexComponentsofCVDsystemsWhat’sDCVD?DCVDmechanismDCVDprocessapplicationDCVDfilmcharacteristic&indexSACVDPECVDHDPCVD
DCVDProcessIntroductionDCVDProcessIntroductionWhatWhat’sDCVD?DCVD
Theprocessofdepositingsolidfilmsusingvapororgasesasthesourcematerial.Thesesolidfilmsareusedforinsulationbetweensemiconductorlayers.DielectricAmaterialthatconductsnocurrentwhenavoltageisappliedtoacrossit.OxideandNitridesaredielectricmaterials.Chemical
Thereisachemicalreactionatthewafersurfaceasfilmisdeposited.Vapor
Thereactantareeithergasesorvapor.DepositionAsolidfilmisdepositedonthesurfaceofthewaferasaproductofthereactionbetweensourcegasesWhat’sDCVD?DCVDComponentsofCVDsystemComponentsofCVDsystemCVDprocessdescriptionA).Gas/VaporphaseprecursorsintothereactorB).PrecursorsdiffuseacrosstheboundarylayerC).PrecursorsadsorbonthesubstrateD).AbsorbedprecursorsmigrateonthesubstrateE).ChemicalreactiononthesubstrateF).ByproductdesorptionsG).ByproductdiffuseacrosstheboundarylayerH).Byproductoutofreactor(A)(B)(C)(D,E)(F)(G)(H)BoundarylayerCVDprocessdescriptionA).GasDCVDProcessSilaneprocess:
Oxide:SiH4+N2O plasma&heat SiOx+N2+H2+H2O+othervolatilesSiH4+O2SiOx+H2+H2O+othervolatilesNitride:SiH4+N2+NH3
plasma&heat SiNxHy+othervolatilesSION
SiH4+N2O plasma&heat SiOxNy+N2+H2+H2O+othervolatilesSilaneprocesschambercleanNF3+SiO2plasma&heatSiF4+N2+othervolatilesNF3+SiNplasma&heatSiF4+N2+othervolatilesplasma&heatDCVDProcessSilaneprocess:plaDCVDProcessOzoneTEOSProcess:USGO3 heat O2+OO+Si(OC2H5)4
plasma&heatUSG+volatileorganicsPSGO+TEOS+TEPOheatPSG+volaticorganicsBPSGO+TEOS+TEPO+TEBplasma&heatBPSG+volatileorganicsTEOSchambercleanC2F6+NF3+SiO2
plasmaSiF4+CO+N2+othervolatileDCVDProcessOzoneTEOSProcessSurfaceAdsorption
SubstratesurfaceChemisorbedprecursorPhysisorbedprecursorBondingEnergySurfacedistanceChemisoptionStrongbondingenergyprecursor&surfaceVerylowsurfacemobility&badstepcoverageSiH4gasPhysisoptionWeakbondingenergyprecursor&surfaceHighsurfacemobility&goodstepcoverageTEOSgasSurfaceAdsorptionSubstratesDCVDApplicationin18LGShallowTrenchIsolation(STI)Anti-reflectedCoating(DARC)PremetalDielectric(ILD)IntermetalDielectric(IMD)PassivationDielectric(PASS)1.5kÅSRO+6kASINMet1Met2Met3Met4Met5Met6Gox38Å(El.)0.15m0.15m0.35mPoly2kÅSiON400ÅILD7.5kÅCOSiIMD19.0kÅIMD29.0kÅIMD39.0kÅIMD49.0kÅIMD510.5kÅHDP10.0kÅSiN+SRO7.5kÅ8.7kÅ4.8kA4.8kÅ4.8kÅ4.8kÅ4.8kÅ10kÅHDPDCVDApplicationin18LGShalloDielectricfilmcharacteristics
RefractiveIndex(R.I.)SpeedoflightinavacuumSpeedoflightinthefilmR.I.=Surfaceinterfaceθ2
θ1Vacuumn1Filmn2
n1sinθ1=n2sinθ2DielectricfilmcharacteristicSiO2=1.46,Si3N4=2.01,Air~1(Referenceλ=633nm)R.I.SOG
SiO2SROSiONUVSiNSiNDARCPoly
1.381.461.501.751.92.02.0~2.53.8~4.0Oxygen/NitrogenrichSiliconrichDielectricfilmcharacteristics
PECVDrefractiveindextrendSiO2=1.46,Si3N4=2.01Dielectricfilmcharacteristics
Depositedfilmthickness
Depositionrate=Depositedtime
Thicknessbeforewetetch-Thicknessafterwetetch
Wetetchrate=Wetetchtime
ThicknesschangeoftheCVDfilm
Wetetchrateratio=(WERR)Thicknesschangeofthethermaloxidefilm(A/min)DielectricfilmcharacteristicDielectricfilmcharacteristics
ThicknesschangeafterthermalcycleShrinkage=Standarddeviation(σ)(Non-)Uniformity=Meanvalue(
)Σ(XI-)2
σ=N-1Thicknessbeforethermalcycle
╳100%i=1~nX1+X1+…….+XNNDielectricfilmcharacteristicDielectricfilmcharacteristics
StressBarewaferCompressivestress(-)Tensilestress(+)Afterdeposition△L=α
△TL
α
Coefficientsofthermalexpansion(in10-6C-1)
SiO2=0.5 Si=2.5Si3N4=2.8 W=4.5Al=23.2DielectricfilmcharacteristicDielectricfilmcharacteristics
StresscalculatedE
Stress=(-)1-vh2
6t1
Rafter1
RbeforeSubstrateYoung’smodulusSubstratethicknessSubstratepossion’sratioFilmthicknessWafercurvatureradius*1Mpa=106Pa=107dynes/cm2DielectricfilmcharacteristicWhyUsingSABPTEOS?
Sub-atmosphericdopeTEB/TEPOwithTEOS/O3Goodgap-fillingcapabilityandPlanilization
forILDLayerTrapNa+LowerReflowTemperatureNonePatternSensitivityThroughputSACVD(Sub-AtmosphericCVD)WhyUsingSABPTEOS?SACVD(SubHardwareintroductionHardwareintroductionINTERLAYERDIELECTRIC(ILDScheme)PE-SION400ADEPSABP-TEOSDepositionBPSGFLOW PETEOSdepositionOxCMPforILDN-WellP-WellP+P+N+N+2KÅSABPSG10.5KÅPETEOS400ÅSINOINTERLAYERDIELECTRIC(ILDSchPECVD
SiH4+N2OplasmaSiOx(Hy)+othervolatiles(400C)SiH4+N2+NH3plasmaSiNx(Hy)+othervolatiles(400C)SiH4+N2O+NH3+N2
plasmaSiOxNy(Hz)+othervolatiles(400C)SiH4+N2O+He
plasmaSiOxNy(Hz)+othervolatiles(400C)WhyneedPECVD?LowtemperatureformetallizationprocessHighdepositionrateforWPHR.I.Adjustable(DARC,SRO)PECVD(PlasmaenhancedCVD)
PECVDPECVD(PlasmaenhancedCVPECVD(PlasmaenhancedCVD)
ACPECVD(PlasmaenhancedCVD)ACDielectricARCDARC:DielectricAnti-ReflectiveCoating
EliminatetheunwantedreflectionsbyphaseshiftcancellationofunwantedwavelengthPECVDOxynitride(SiH4+N2O+He→SiON)DielectricARCDARC:DielectriPECVDApplication(0.18Logic)
1.5kÅSRO+6kASINMet1Met2Met3Met4Met5Met6Gox38Å(El.)0.15m0.15m0.35mPoly2kÅCOSi4HDP10.0kÅSiN+SRO7.5kÅ6.8kÅ5.1kÅ5.1kÅ5.1kÅ5.1kÅ5.1kÅ10kÅHDPPESiONEtchstoplayerN-WellP-WellP+P+N+N+2kÅSABPSG10.5kÅPETEOSILDPETEOS10.5KMet1N-WellP-WellP+P+N+N+6.5kÅHDP11KAPEFSGIMDPEFSG11KPass.PESRO1.5K/PESIN6KPolyDARCMetalDARCContact/ViaDARCPECVDApplication(0.18Logic)WhyUsingHDP?
WhatistheHDP-CVD?=>HighDensityPlasma(HDP)isatypeofadvancedchemicalvapordeposition(CVD)technologyinwhichthedensityoftheinconventionalplasma-enhanced(PE)CVDtechnology.plasma(~1011-1012n/cm3)ishigherthanthatused
WhyweneedHDP-CVD?
=>HDP-CVDisconsideredaleadingtechnologyforthemostadvancedgap-fillingrequirementsin<0.35µmdesignrules.HDPCVD(HighDensityPlasmaCVD)
WhyUsingHDP?HDPCVD(HighDStepcoveragebacSidewallstepcoverage=b/aBottomwallstepcoverage=c/aAspectratio=h/sl:line,s:space
ArrivingangleStepcoveragetopressure&surfacemobilityrelativeoverhanghlsStepcoveragebacSidewallstepGapfill
TrapperprofileOverhangprofileNormalprofileVoidCM81SABPSGvoidissueGapfillTrapperprofileOverhaHDP-CVDConcept
Silaneoxidedepositingandargoni
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