irf中文数据手册要点

1、IRF540 N 沟道 MOS管特性 Thrench '工艺低的导通内阻快速开关 低热敏电阻综述SYMBOLQUICK REFERENCE DATAV35S = 10DVlD = 23 A使用沟渠工艺封装的 N通道增强型场效应功率晶体管 应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。IRF540S中提供的是SOT404(D PAK)表面安装的包裹。管脚管脚描述1Gate2Drain3SourceTabDrainSOT404 (DJPAK)SOT78 (TO220AB)极限值系统绝对最大值依照限制值符号参数条件最小值最大

2、值单位V_DSS漏源极电压Tj= 25 ?C to 175?C-100VV_DGR漏门极电压Tj = 25 ?C to 175?C;-100VV_GS门源极电压RGS = 20 k?-士 20VI_D连续漏电流Tmb = 25 ?C; VGS = 10 V-23AI_DM脉冲漏电流Tmb = 100 ?C; VGS = 10 V-16AP_D总功耗Tmb = 25 ?C-92ATj，Tsig操作点和Tmb = 25 ?C-100W存储温度-55175C雪崩能量极限值符号参数条件最小值最大值单位非重复性雪 崩能量最大非重复 性雪崩电流Un clamped in ductive load, IAS

3、 = 10 A; tp = 350sriTjr to avalanche = 25?C;VDD W 25 V; RGS = 50 ?; VGS = 10 V; refer to fig:14-23023mJA热敏电阻符号参数条件最小值典型值最大值单位:安装底座交界SOT78封装，自由空间-1.5K/W处的热阻SOT404 封装，PCB 上-60-K/W周围环境热阻-50-K/W电特性25 C除非另有说明符号参数条件最小值典型值最大值单位漏源极崩溃电压VGS =0V ; ID =0.25mA100-VTj = -55?C89V门阀电压Vds = Vgs ; ID = 1 mA234V漏源极导通电

4、阻Tj = 175?C1-VTj = -55?C6V向前跨导JVGS = 10 V; ID = 17 A-4977mQ门源极泄漏电流Tj = 175?C132193mQ8.70门极电压漏电流Vds =25V; Id=17A15.5-SVgs = ±20 V; Vds =0V-10100nAVDS = 100 V; VGS = 0 V-0.0510uAVDS=80V;VGS=0V;Tj= 175?C-250uA总共门极电荷ID = 17 A-65nC门源极电荷VDD = 80 V;-10nC门漏极电荷VGS = 10V-29nC开启延迟时间Vdd = 50 V; Rd = 2.2 ?;

5、-8-ns开启上沿时间Vdd = 10 V; Rg = 5.6 ?-39-ns关闭延迟时间Resistive load-26-ns关闭卜沿时间-24-ns内部漏电感Measured tab to centre of die-3.5-nH内部漏电感Measured from drain lead to centre-4.5-nH内部源极电感of die (SOT78 package only)-7.5-nHMeasured from source lead to sourcebond pad输入电容VGS = 0 V; VDS = 25 V; f = 1 MHz-8901187pF输出电容-13

6、9167pF反馈电容-83109pF反向二极管极限值及特性符号参数条件最小值典型值最大值单位连续源极电流I F=28A ;-23A脉冲源极电流-92A二极管正向电压Vgs =0V-0.941.5V反向恢复之间 反向恢复命令I f =17A ; Vgs =0V;-61200-ns nC-d lF/dt=100A/us; Vr=25V底座温度-自然功率降低百分比图1:自然功率损耗 底座温度-漏电流降低百分比图2 :自然持续漏电流 漏源极电压-脉冲漏极电流峰值图3 :安全操作区域 脉宽-瞬态热阻抗图4 :瞬态热阻抗 漏源极电压-漏极电流图5:典型输出特性漏极电流-漏源极导通阻抗图6:典型导通阻抗图7: