微电子学教学计划

Microelectronicdevicesandcircuits

TeachingGoalandBasicRequirements:

ThiscourseistheoneofbasicmicroelectroniccoursesforISEEUndergraduates.

ContentofCourses&HoursAllocation:

Thiscourseincludes48hoursteachinginclassroom.

1.ChargeCarriersandTransport8hours

Electronsandholesinsemiconductors;generationandrecombination;intrinsicconductivity;doping;extrinsiccarrierconcentration;p-andn-typesemiconductors;excesscarriers;minoritycarrierlifetime.

Mobilityandconductivity;diffusion;theEinsteinrelation,quasi-neutrality,anddielectricrelaxation;roleofminoritycarriers.

2.P-NJunctions8hours

Spacechargeindopedsemiconductor;depletionanddiffusion,capacitances;Poisson-Boltzmannequation;Debyelength;boundaryconditionsatedgeofspacechargelayer.

DiodeI-Vcharacteristics;incrementalequivalentcircuit.ApplicationinLightemittingdiodes.Opticalinjectionofcarriers;photodiodes;solarcells.

3.ElectronicStatesinSemiconductor6hours

Bandstructuretheoryofsemiconductors;densityofstates.

Fermienergies,impuritiesanddefectsinsemiconductors;hotelectrons.

4.MOSFieldEffectTransistors12hours

MOScapacitor:accumulation,depletion,inversion,VFB,VT,QA,andQN,stronginversionwithdepletionapproximation;factorsthatcontrolthresholdvoltage.

MOStransistors:gradualchannelapproximation;I-Vcharacteristicsinstronginversion;channellengthmodulation;velocitysaturation.IncrementalmodelincludingEarlyeffect,backgateeffect,andcapacitiveelements;sub-thresholdphysics;draincurrent;comparisontoBJT.

MOSLimitations:intrinsichighfrequencylimitationsofMOSFETs,sub-thresholdcurrentvelocitysaturation,surfacemobility,shortandnarrowchanneleffects,hotcarriersMOSFETbreakdown,MOSFETscaling,numericalsimulationofMOSFETcharacteristics.

5.IntroductiontoCMOS14hours

CMOSanalysis:switchingdelays,powerdissipation,speed/powertrade-offs.Sub-thresholdleakage;transfercharacteristics,noisemargins,optimaldevicesizing.

Linearamplifierbasics:performancemetrics,currentsourcebiasing,currentmirrors,mid-bandrange,two-portrepresentation.

Differentialamplifiers:largesignaltransfercharacteristics;smallsignalanalysisusingcommon-anddifference-modeinputs.

Multi-stageamplifiers:currentsourcebiasing;outputstages;activeloads,biasingformaximumgain,inputandoutputswings;stageselection,frequencyresponse.

Single-transistorbuildingblockstages:common-source,common-gate,andcommon-drainstages;theMillereffect;IntrinsicfrequencylimitationsofMOSFETs.

TeachingPlan:

1.Assignexercisesbiweekly.

2.Teachingviamultimediacoursewaresinclass.

3.Threehoursofteachinginclassand1hourofcourseproject.

4.Totalscore=midtermexam(15%)+finalexam(25%)+discussion(20%)+homework(20%)+project(20%)

Textbook:

R.S.MullerandT.I.Kamins,DeviceElectronicsforIntegratedCircuits,3rdInternationaledition,Wiley,NewYork

Referencebooks:

Fonstad,Clifton.MicroelectronicDevicesandCircuits.2006ElectronicEdition.

Howe,Roger,andCharlesSodini.Microelectronics:AnIntegratedApproach.UpperSaddleRiver,NJ:PrenticeHall,1996.ISBN:9780135885185.

Pierret,Robert.VolumeI:SemiconductorFundamentals.2nded.UpperSaddleRiver,NJ:PrenticeHall,1988.ISBN:9780201122954.

Neudeck,George.VolumeII:ThePNJunctionDiode.2nded.UpperSaddleRiver,NJ:PrenticeHall,1998.ISBN:9780201122961.

Neudeck,George.VolumeIII:TheBipolarJunctionTransistor.2nded.UpperSaddleRiver,NJ:PrenticeHall,1989.ISBN:9780201122978.

Pierret,Robert.VolumeIV:FieldEffectDevices.2nded.UpperSaddleRiver,NJ:PrenticeHall,1990.ISBN:9780201122985.

Tentative

Calendar

Week

TOPICS

1

Electronsandholesinsemiconductors;intrinsicconductivity;Doping;p-andn-typesemiconductors.

2

Detailedbalanceandmassaction;extrinsiccarrierconcentration.Excesscarriers;generationandrecombination;minoritycarrierlifetime.

3

Spacechargeindopedsemiconductor.Depletionanddiffusion,capacitances,Poisson-Boltzmannequation;Debyelength.Boundaryconditionsatedgeofspacechargelayer.

4

Reversebiasedjunctions.Considerforwardbiasandthespecialcaseofminoritycarrierinjectionintoquasi-neutralregions;Forwardbiasedp-njunctions:carrierinjection,I-Vcharacteristics

5

DiodeI-VcharacteristicsIncrementalequivalentcircuit.ApplicationinLightemittingdiodes.Opticalinjectionofcarriers;photodiodes;solarcells.

6

Bandstructuretheoryofsemiconductors,densityofstates;Fermienergies,impuritiesanddefectsinsemiconductors,hotelectrons.

7

MOScapacitor:accumulation,depletion,inversion,VFB,VT,QA,andQN.stronginversionwithdepletionapproximation;factorsthatcontrolthresholdvoltage.

8

MOStransistorsI:gradualchannelapproximation;I-Vcharacteristicsinstronginversion;channellengthmodulation;velocitysaturation.

Midterm

9

MOStransistorsII:IncrementalmodelincludingEarlyeffect,backgateeffect,andcapacitiveelements;Sub-thresholdphysics;draincurrent;comparisontoBJT.

10

MOSLimitations:intrinsichighfrequencylimitationsofMOSFETs,sub-thresholdcurrentvelocitysaturation,surfacemobility,shortandnarrowchanneleffects,hotcarriersMOSFETbreakdown,,numericalsimulationofMOSFETcharacteristics.

11

CMOSanalysis:switchingdelays,powerdissipation,speed/powertrade-offs.Sub-thresholdleakage;transfercharacteristics,noisemargins,optimal