TFTLCD新技术介绍课件

TFT-LCD新技术介绍课程内容课程目标了解TFTLCD新技术现况TFT新技术CF新技术Cell新技术课程大纲1.TFT新技术介绍1.14-Mask1.2GOA1.3Highapertureratio(LowKPVX)2.CF新技术介绍2.1COA3.Cell新技术介绍3.1VerticalAlignment

(MVA,PVA,PSA)3.2HomogenousAlignment

(IPS,FFS)4.总结玻璃基板玻璃基板扫描电极金属沉积栅电极形成绝缘层沉积有源层沉积(a-Si)欧姆接触层沉积有源层形成信号金属层沉积信号线形成欧姆接触层形成钝化层沉积接触孔形成像素电极层沉积像素电极形成像素电极信号线钝化层欧姆接触层有源层栅绝缘层扫描电极接触孔1.14mask-Array5mask工艺流程Mo/Al/MoBusLine4MaskFlow5MaskFlowGateAl/MoFormationG-SiNx&ASLayerDep.1stMo/Al/Mo(Wet)A.E./Ash.(Dry)2ndMo/Al/Mo(Wet)n+Si(Dry)SEMo/Al/MoDep.SEMaskSEEtch.(Wet)SEMaskASStripSEMo/Al/MoDepASPhotoASEtch(Dry)n+Si(Dry)1.14MaskIntroduction--.4Mask&5Mask差异ASPhoto&ASStripSavedSE2ndMo/Al/Mo(Wet)processadded5MaskTFT结构1.14Mask-Photo工艺

1.光罩简介灰阶光罩GrayToneMask半色调光罩HalfToneMask普通光罩不透光透光不透光入射光光罩光强光阻玻璃基板入射光光罩光强光阻玻璃基板不透光不透光部分透光透光透光透光透光入射光光罩透光不透光不透光部分透光透光光强光阻玻璃基板SSM(SingleSlitMask):与GTM类似，只是中间的狭缝只有一条□应用Mo/Al/Mo的他社(S,B社)是使用PostBakeSkip的PRCompanyGeneration

4MaskMetalMaskFlowPRThickPostBakeEtchantS8GOMo/Al/Mo&Cu/TiSSM1W/1D2.8㎛135℃H3PO4,CH3COOH,HNO3(7%)7GOMo/Al/Mo&Cu/TiSSM2W2D2.1㎛Skip5GOMo/Al/Mo&Cu/TiGTM2W2D

1.9㎛??

L8GOCu/MoTiHTM2W2D1.9㎛SkipH2O27GOCu/MoTiHTM2W2D1.9㎛SkipH2O2OMoHTM1W1D2.1㎛SkipH3PO4,CH3COOH,HNO3(3%↓)6GOCuHTM2W2D1.9㎛SkipH2O2B8GOMo/Al/MoHTM2W2D2.8㎛130℃H3PO4,CH3COOH,HNO3(4%↓)6GOMo/Al/MoHTM2W2D2.2㎛130℃H3PO4,CH3COOH,HNO3(2~8%)5GOMoHTM1W1D2.1㎛SkipA8GOMo/Al/Mo

GTM

&HTM7GOMo/Al/Mo

GTM2W2D2.0㎛SkipH3PO4,CH3COOH,HNO3(2~5%)＊我司:HNO3:1.9wt%,Additive無2.竞争社4Mask工程应用现况1.14Mask-Photo工艺

3.Mask技术比较_GTM/HTM/SSMConceptDesign~1.3µmSlit/BarHalfTonelayer(Transmittance35~45%)~2.25µmslitunderexposureresolutionMerit

Shortdelivery

MaskCostlowforonly1layer

WidePhotomargin

Gcess

ShortExp.Time

GoodforshortchannelDemerit

NarrowPhotoMargin

LongChannelLength

Bcess

NGforshortchannel

MaskCosthigh&Deliverylong

NarrowPhotoMargin(NotpossiblewithCanon)ACIL=4.5µmACIL=3.5µmACIL=5.5µmGrayToneMaskHalfToneMaskSingleSlitMaskFormationmethodsfor4maskTFTwiththesameIoncurrent~2.25µm~1.3µm1.4µm1.3µm1.14Mask-Photo工艺

ITEMHighBakeHardBakeSkipRemark制造ResinType使用高分子

Resin使用低分子Resin

PRManufacture进行提炼低分子工程-

增加曝光

Speed提高剂-

Cost制造单价上升

20%-

特征ThermalStabilityPostBake可以应用(130℃)PostBakeSkip

ChemicalResistanceVeryGoodNormalCrackbyStrongEtchant(NH03>4%)CoatingPerformanceGoodGood

MuraGoodGood

WetEtchBiasGood(VeryGood)Good

DryEtchingResistanceGoodGood

StripNormalGood

4MaskPRThickPoor(2.8㎛)Normal(2.2㎛)PR使用量Exp.EnergyPoor(52mJ)Normal(41mJ)Exp.TactTime

cf)TOKSiteTest曝光量MarginNormalVeryGood因PostBake变化的形状MetalMoAlMoMo/Cu

CompetitionS.S(7,8G),BOE(6,8G)L(7,8G),BOE(4,5G)

PhotoParticlePostBakeFume有-PostBake污染严重PatternAngle(PostBake以后)高(ViaLayer很难)低ViaPRAngle<60′Exp.TactTimePoorGoodRunningCost50%高-PRThick考虑□4MaskPR比较1.14Mask-Photo工艺

1.14Mask-Photo工艺

HTM>M&SSM比较光阻8um8umMaskCD=DICD灰区厚度≒6000Å？%透过率(曝光速度

:a )(曝光速度

:b)灰色调区域透过率确定灰色调区域的实验确定方法：1.14Mask-Photo工艺

光阻光阻透光区域透光区域透光区域部分透光区域曝光曝光曝光(160)透光区域透光区域透光区域透光区域透光区域透光区域透光区域部分透光区域透光区域透光区域透光区域部分透光区域透光区域透光区域透光区域1.14Mask-Photo工艺

灰色调区域不透光区域沟道(显微镜)不透光区域不透光区域不透光区域灰色调区域灰色调区域SEM(截面)清洗涂胶曝光显影PostBake1.14Mask-Photo工艺

Slitwidth(μm)33.544.555.566.5光阻厚度(Å)126908560613048103880313026302750半色调光罩设计选定：不同半色调沟道宽度对PR的影响1.14Mask-Photo工艺

半色调光罩设计选定：a|b|a(μm)4|7|44|6|44|5|44|4|4光阻厚度(Å)5850572055005750a|b|a(μm)5|7|55|6|55|5|55|4|5光阻厚度(Å)3600335034103660a|b|a(μm)6|7|66|6|66|5|66|4|6光阻厚度(Å)2470226022202440不同Halftone宽度对PR的影响CSOT4MaskExp.EnergyChannelLengtha㎛a+0.5

㎛a+1

㎛a+1.5

㎛bmJb-c

mJb-2cmJH/T低H/T低H/T高H/T高H/T高H/T高1.14Mask-Etch工艺

两次干刻两次湿刻（2W2D)：SD金属为干刻难蚀刻的金属；例如Al和Al合金以及Cr等(BCEtypeTFT)PRDryEtch2ndWetEtchFinal2ndDryEtchH3PO4/CH3COOH/HNO3SF6/Cl2SF6/O2H3PO4/CH3COOH/HNO3SF6/O2/He第一次湿法蚀刻第一次干法蚀刻4Mask黄光后1.14Mask-Etch工艺

一次干刻一次湿刻（1W1D)：SD金属为干刻难蚀刻的金属；例如Mo等(BCEtypeTFT)4Mask黄光后第一次湿法蚀刻第一次干法蚀刻光阻灰化信号线金属层干刻刻蚀完成后图示欧姆接触层刻蚀刻蚀完成后SEM图示H3PO4/CH3COOH/HNO3SF6/Cl2SF6/O2SF6/O2/Cl2SF6/O2/He第一次湿法蚀刻第一次干法蚀刻ItemSpecResult1SE(Ch内)G-SiNxGSH:3500Å3375GL:500Å546a-SiAL:300Å1775AH:1000Ån+400Ån+Tail-0.73Residuea-Si900Å1217n+Depth800Å5522SE(Ch外)ResidueGI3000Å3303GILoss1000Å574ActTail1.7㎛1.62MetalTaper-39.13SECH-Length5.0㎛5.3ResidueGIGILossActTailN+TailResiduea-SiN+DepthSiNxa-Si,n+MetalTaper21CH-L1233沟道short沟道断开棋盘muraCellTest现象拆屏后现象Array基板可以看到同样的mura解决办法调整halftonePR厚度调整halftonePR厚度干刻设备电极PM1.14Mask-不良工艺图片GateDriverOnArray1.2GOA

将移位寄存器集成到了TFT基板上面;未增加Array制程

关键技术点:移位寄存器的设计及信赖性

优点:去掉了Gatefanout区域;减少了sealing区域，减少了模组的制程

成本降低:省掉了GateCOFGOA驱动的panel有COF的panelSS13T1Cdesign1.2GOAGOA制程中可能出现的不良ConventionalTypeBMonArrayOrganicInsulatorApertureRatioincrease1.3Highapertureratio(LowkPVX)1.3Highapertureratio(LowkPVX)优点(1)提高开口率：提高光源和电源的利用效率(2)平坦化TFT基板：提高cellgap的均匀性以及对比度(3)降低制造成本：CoatingVsPECVD材料性质(感光材料or非感光材料)(1)低介电常数聚合物:~2.5~4VsSiNx(~7.0)(2)与金属Al,Cr,Mo,ITO及非金属SiNx良好的粘附性(3)透过率：>90%(4)硬度:>3H现有材料的供应商Honeywell,Dongjin,JSR,AZL社(Korea)S社(Korea)notenoteMobileTV1G~3GMobile1G~4GMobileS●●

社TVMarketShareJ社,90.0%7G~8GTVDongjin,10.0%低介电常数材料在韩国LCD的适用情况1.3Highapertureratio(LowkPVX)材料反应原理感光成分丙烯酸树脂萘的化合物茚羧酸碱性溶液聚合物间以及聚合物与感光成分的交联聚合物感光成分-.通过使用lowK材料可以实现高开口率以及平坦TFT基板的目的1.3Highapertureratio(LowkPVX)光敏性材料制程（正性材料与负性材料）1.3Highapertureratio(LowkPVX)节省2步制程现有PVX制程与LowK制程差异PVXDep.PRCoatingSoftBakeExposureDevelopmentEtchStripResinCoatingSoftBakeExposureDevelopmentBleachingCuring光敏材料PVX制程现有PVX制程1.3Highapertureratio(LowkPVX)–ArrayProcessEtchHMDStreatment1.SE制程完成3-1.黄光:树脂材料涂布

-.材料变更:PR→树脂2.PVX沉积-.制程节省→在黄光coating制程中完成1.3Highapertureratio(LowkPVX)高开口率接触孔制程3-2.黄光:曝光&显影-.制程同现有TFT制程1.3Highapertureratio(LowkPVX)4.DryEtch:SiNx蚀刻

-.与现有制程类似5.FinalTFT

-.剩余制程同现有制程相同显影时间Cure温度Cure时间Bleach强度

Cure温度Cure时间Cure温度Cure时间曝光强度过孔形貌透过率硬度1.3Highapertureratio(LowkPVX)附着力工艺条件摸索Temperaturea℃b℃c℃d℃TimeAdherenceASTM100%100%100%100%GB0Degree0Degree0Degree0DegreeASTMGBTarget:100%,0Degree1.3Highapertureratio(LowkPVX)曝光显影不足的过孔形貌曝光显影充足的过孔形貌ResinScumResin的AshingRate与PR很接近；GI的刻蚀方法与MP的GI刻蚀方法相同；为了增大曝光与显影的ProcessMargin，在GIEtch前增加Ashing，确保过孔形成；根据最终所需的Resin厚度与Capa.可适当增加Ashing时间。1.3Highapertureratio(LowkPVX)ViaHole稳定形成ItemSpec.Actual硬度≥3H3H透过率>90%>93.5%(500mJ)硬度、透过率达到指标1.3Highapertureratio(LowkPVX)60sDevelopCondition:TMAH2.43%21℃65s70sIon↑,Vth↓Ta-ShanChangetal,IEEEELECTRONDEVICELETTERS,VOL.27,NO.11,NOVEMBER20061.3Highapertureratio(LowkPVX)TFT特性比较BadViaDevelopTimeLongShort★

树脂材料对显影液(TMAH)较敏感,同一张Glass上ViaHoleCD在不同部位随显影时间不同变化较大.★此种不良可以通过降低显影液浓度提高显影时间,来提高同一张Glass上的显影的均匀性来解决.1.3Highapertureratio(LowkPVX)1.3Highapertureratio(LowkPVX)Appendix-MaterialDetailpropertiesAppendix-MaterialDetailproperties2.COA-优劣与应用

优点

:高开口率

直接与TFT像素对位ITOoverlapdatabusrule不利

:Array工艺负责

Arrayyield受影响HeavierloadingonglasstransportingReworkissue

26"31.5"40"42"46"55"HD605039373428FHD857055524840Pixel-Per-InchResolutionDisplaysize产品应用对于高解析度(HighPPI)Display,像素的开口率是关键S社32”FHD采用COA技术可提升开口率12%ColorfilterOnArray2.COA–ProcessFlowCOAPEP3_1:

R/G/B黄光processPEP3_4:

Dry-EtchSiNxandStripperPEP3_2:

SiNxprocess

PEP3_5:ITO&ITOpatternPEP3_3:

黄光process

TFTPadCstPV1(SiNx)process280oc,1000APV2(SiNx)process200oc,1000AFab.Challenge:Array&CFFlowConnection!PEP1PEP2PEP3PEP4NormalMII4MaskPV(SiNx)process280oc,2000A2.COA-MaskFlowSS52"Mask

countTFTCF1M1BM2IN/M2OC3Pass-SiNxITO4RPS5G

6B

7Pass-SiNx

8ITO

PixeldesignIN/M2:onemaskCstmadebyM1/ITO(noCFresist)ShieldingbarbiasVcomLowcolorshiftColorresistoverlapeachother3.1VAVerticalAlignment（垂直取向）MVAbyFujitsuPVAbySECASVbySharpPSA公布时间199719982001初始LC取向Almost90°90°Almost90°Almost90°LC倾斜的控制方式楔形突起与条形ITOArray及CF基本上面均有条形ITO电极ITO电极及突起（nipple型）MonomorMulti-domainVerticalAlignmentConventionalTypeSideViewTopView*AsiaDisplay’973.1VA–Multi-domainVerticalAlignment(MVA)(1)突起处于取向层的下部，不需要Rubbing工艺，

突起可以自动的将这些区域分成不同的畴(2)V=0时，液晶取向近似的垂直于玻璃基板(3)VON,液晶取向受到基板两侧的电压重新排布并同时形成多畴问题：突起严重影响开口率(EarlyFujitsupanel:AR~58%)ImprovedMVA：Real-VirtualProtrusions3.1VA–Multi-domainVerticalAlignment(MVA)提升开口率。突起只在TFT侧，CF侧突起被ITOSlitpattern（~10um宽）取代，ITO电极边缘的电场作为虚拟的一个突起来起作用优点：更高的对比度，更高的开口率68%,制程更加简单Cross-sectionalViewElectricFieldProtrusioninCFCommonelectrodePixelelectrodeAdvancedMVA(AMVA)AUOptronics*PicturefromTFTcentral,http://www.tftcentral.co.uk/articles/panel_technologies.htm3.1VA-AMVANormalPVA:WedgeshapePerformanceimprovementofS-PVA:Z-shapePVA:basicconcept3.1VA-PatternedVerticalAlignment(PVA)3.1VA-ASVASV：ContinuousPinwheelAlignment，连续焰火状配向同属于VA阵营的一员。在未加电状态下，液晶分子跟VA模式一惯特性一样都是分子长轴垂直于面板方向互相平行排列。如图，CPA模式的每个像素都具有多个方形圆角的次像素电极，当电压加到液晶层次像素电极和另一面的电极上时，形成一个对角的电场驱使液晶向中心电极方向倾斜。各液晶分子朝着中心电极呈放射的焰火状排列。由于像素电极上的电场是连续变化的，所以这种广视角模式被称作“连续焰火状排列（CPA）”模式3.1PSA-ContinuousPinwheelAlignment)RequirementsforLC1.Can’treactwithmonomer2.Betterphaseseparation(LC&monomer)Requirementsformonomer

1.Betteralignmentability2.FastercuringspeedPolymerizationfromsurface.AllMonomermigratetoPIsubface3.2HomogenousAlignment–IPSVsFFSIPSFFSl/d>1<1or0l/w>1<1or0FieldEyEy,EzElectrodesMetalsorITOITOGlassGlassLightLightLightInPlaneSwitchGlassLCMoleculeElectricFieldPolarizerAnalyzerGlassGlassLightFringeFieldSwitchAnalyzerElectricFieldLCMoleculePolarizerPassivationlayerCommonelectrodePixelelectrodeAlignmentlayerLightyzxHitachi,K.Kondoetal.,AsiaDisplay’95Hydis,S.H.Leeetal,AsiaDisplay’98lwdFFS中的Array电极及Array制程<FFS>GlassGlassl‘GlassGlassSlit{l/w<1,l/d<1

}Box{l=0,l’≠0}<IPS>ldGlassGlassEw{l/w>1,l/d>1

}制程1stITOPass.S/DGateActive2ndITO<1+5Mask>3.2HomogenousAlignment–IPSVsFFSIPSCsBusLineGateBusLineSourceBusLineCgdTFTCsCLCCsGlassGlassCpdFFSCsBusLineGateBusLineSourceBusLineCgdTFTCsCLCCfCsGlassGlassCfCpdCtotal=Cgd+Cs+CLC(IPS)≪Ctotal=Cgd+Cs+Cf+CLC(FFS)IPS：Cs↑透光区域

↓FFS:Cs位于透光区域且不影响透光区域3.2HomogenousAlignment–IPSVsFFSPXLDesign(TN,IPS,U-FFS)TNmodeIPSmode(L)U-FFSmode(H)3.2HomogenousAlignment–IPSVsFFSONStateOffState<1-D><2-D>APAYellowishColorBluishColorP*.

1-畴

:Colorshift发生：

沿LC指向矢和垂直LC指向矢的dΔn

有差异*.2-畴:Colorshift减小：

多畴LC分子自补偿FFS方式中的LC的取向3.2HomogenousAlignment–IPSVsFFS*PicturefromTFTcentral,http://www.tftcentral.co.uk/articles/panel_technologies.htm3.2Ho