温度传感器外文翻译

英文翻译TemperaturehumiditysensorThesensorintypemanysensors,thetemperaturesensorandappliestwoaspectsinitsoutputbothissecondtoandwithitcorrelationtemperatureisanimportantphysicalparameter,heaffectsallphysical,chemistryandbiomedicineprocessmarch,regardlessofintheindustry,theagriculture,thescientificresearch,thenationaldefenseandpeople'sdailylifeeachaspect,thetemperaturesurveyandthecontrolallistheextremelyimportantwiththeelectronictechnologyandthematerialssciencedevelopment,toeachkindofnewthermalelementandthetemperaturesensorrequeststructureadvanced,theperformanceisstable,satisfiesthemoreandmorehighrequestwhichproposedtothetemperaturesurveyandthecontrol.SensorclassificationcarriesonclassifiedresistancetypePNaccordingtothemanufacturetemperaturesensormaterialandtheprincipleofworktotiethetypethermoelectricitytyperadiationformularoperatingregionisreferstotheresistancevaluetohavetheremarkablechangetemperaturesensoralongwiththetemperaturechange,itmaytransformdirectlythetemperatureastheelectricaltheoperatingtemperaturescope,itsresistancethewhichincreasesalongwiththetemperatureascensioniscalledpositivetemperaturecoefficient(PTC);Itsresistancenumberthewhichreducesalongwiththetemperaturetascensioniscallednegativetemperature(NTC);Thenegativetemperaturewhichreducessuddenlyalongwiththetemperatureriseiscalledcritical(CTR)inawarmareainternalresistance.1.PTCprincipleofthePTCrusuallytousethe(BaTio3)ceramicmaterial,thepureBaTio3ceramicshavetheextremelyhighelectronicresistivityunderoftenthetemperature,above108Q•m,thereforeistheinsulator.IfcarriesonthedopinginBaTio3,maycausetheBaTio3semiconductor,forexample:Mixesby%%rare-earthelement,butcausesittobecomehasunderthenormaltemperature——10Q•mNlineofsemiconductors.HaselectricitysemiconductorBaTio3,whenthetemperatureachievedwhenCurietemperatureT,ittransformsbythetetragonalsystemintothecubicsystem,thistimeitselectronicresistivityleapincreasesseveralmagnitudes(times).Positivetemperaturecoefficientthe(PTC)actsaccordingtothisnaturemanufacture.Afterinsemiconductormulti-crystalgrainstructureBaTio3,itscrystalgrain(generalsizesmallisapproximately3-10卜m)theinterioristhesemiconductornature;Butthecrystalboundary(hasferroelectricity)forthehigh-resistancearea.Whentypecrystalexternalvoltage,voltagemajorityoflandingsonhigh-resistancecrystalboundarylevel,thusthecrystalboundaryhasaneffecttothematerialelectricconductivity.Theelectronmustpassthroughthecrystalboundarybarrierpotentialbarrierfromacrystalgraintobeabletoarriveanothercrystalgrain.BelowCurietemperatureTc,BaTio3istetragonalsystemdielectric,theexistencehasthespontaneouspolarizedverystronginternalelectricfield,enabletheelectrontohavethehighenergy,thusthetraversingcrystalboundarypotentialbarrieriseasy.ButaboveCurietemperatureTc,BaTio3becomesthecubicsystembythetetragonalsystem,polarizesvanishingspontaneously,internalelectricfieldvanishing,theelectricityisdifficultinthetraversingpotentialbarrier,thereforeabovecuriewarmwasteTc,electronicresistivitysharpincrease.Whentwocrystalgrainscontactmutually,crystalgrainbarrierpotentialbarrierasshowninFigureispotentialbarrierlevelthickness,0Oisthebarrierheight.Accordingtotheequation,thebarrierheight00stickstheeffectivedielectricconstantseffbetweenwiththecrystaltherelationsis: Intheformula,n0isthedensityofdonors;eistheelectronicelectricquantity.s0isthevacuumcoefficientofdielectricalloss.Whentheelectronicoversteppingpotentialbarrierenters00,theelectronicresistivitymaywriteisWhenthetemperatureislowerthanCurietemperatureTC,seffthevalueisapproximatelyabout104,therefore00verysmall,theceramicelectronicresistivityrhoapproachesinthevolumeresistivitypv,afterthetemperaturesurpassesCurietemperatureTC,thevaluedropssuddenly,theAvalueincreases,causesrhothevaluesharpincrease,dopesBaTio3andrhoandbetweenthetemperaturerelationallikechart.NTCthrprincipleofworkNTCtherstormajorityisbythetransitionfamilymetaloxidecompound(mainlyiswithMn,co,Ni,Feandsoon),theagglutinationformsthesemiconductormetaloxidecompoundunderthecontrolledcondition,theyonlyhavethePsemiconductorcharacteristic.Regardingthecommonsemiconductingmaterial,theelectronicresistivitymainlyisreliesonalongwiththewarmwastechangethecurrentcarriernumberalongwiththetemperaturechange,thetemperatureincrement,thecurrentcarriernumberincreases,electricconductionabilityenhancement.ThuselectronicresistivityFfalls.Regardingtransitionmetaloxidecompoundsemiconductor,forexampleNiO,becauseitsacceptorionizingenergyisverysmall,broadbasicionizedcompletelyintheroomtemperature,namelythecurrentcarrierdensitybasicallyhasnothingtodowiththetemperature,thistime,shouldmainlyconsiderthetransportratioandthetemperaturerelations.Bythesemiconductorphysicsknowledge,thetransportratioexpressesbytheequationbelow:Intheformula:Thed--oxygenoctahedrongapisawayfrom(NiOistheNaClstructure);V0--latticevibrationfrequency;TheEi--activationenergy,indicatedtheelectronjumpsoriginallyfromoneinthepositiontheenergywhichneedstotheneighboringatomsite.OrrewritingThentheelectronicresistivityis:0Ne-Ei/kTIfcommand,thentypechanges:rho=p0eEi/KTObviouslythemetaloxidecompoundsemiconductorelectronicresistivitymainlyhasthetransportratioalongwiththetemperaturechangetocausealongwiththetemperaturechange.Whentemperatureincrement,theelectronicresistivitydrops,assumesthenegativetemperaturecoefficientcharacteristic.Criticaltemperaturealsobelongstothenegativetemperaturecoefficient.Butinsomecriticaltemperaturescope,itsresistancenumberdropssuddenlyalongwiththetemperaturerise.Anti-asshowninFigure4-4.Inthecharttheanti-rcurvehasaresistancenumberpointofdiscontinuity,approximatelyfor68°C,resistancenumberpointofdiscontinuitymagnitudegenerallyin3~carryontheadjustmentbasedonthematerialingredient,itissuitablespeciallyin65°C〜75°Cbetweenuses,thiskindofresistormaymaketheconstanttemperaturecontrolandon-offelement.TheCTRrusuallyusestheglasssemiconductorprocessing,takethevanadiumasthemainmaterial.MixesincertainmaterialsandsoonoxidecompoundlikeCaO,BaO,SOorP2O5,TiO2becomesafterthehotdissolve.temperaturesensorbasiccharacteristicinviewofthefactthatthetemperaturesensortypeismany,moreoveritsworkmechanismisalsodifferent.Thismainlyintroducestthehotsensitivediodeandthehotsensitivetransistorcharacteristicandtheparameter.fromthesthematerialandanti-andsooncarryontheclassificationvariously.Accordingtostructureshapeclassification:Laminatedshape,gasketshape,rod-shaped,tubular,thinmembrane,thickmembranousandothershapes.Includesaccordingtotheanti-temperatureraclassification:Normaltemperature,hightemperatureandultralowtemperaturehotsensitiveresistor.Includesaccordingtotheanti-classification:Negativetemperaturecoefficientr(NTC),switchtemperaturer(PTC);Slowaberrationpositivetemperaturecoefficientr(PTC),thecriticalnegativetemperaturecoefficient,theplatinumresistorlimitsthetemperaturecurvelikechart4-4curvature1.1st,resistance-temperaturecharacteristicanti-isreferstobetweentheactualresistancevalueandtheresistancebodytemperaturedependentrelations,thisisoneofbasiccharacteristics.PTCswitchpositivetemperaturecoefficientanti-curve.valuerisessuddenlytosometemperaturenearbythemaximizing.Throughthedoping.IfdopesPbinBaTio3,maycauseTctothehightemperaturetraverse,mixesinelementsandsoonSrorSnafterBaTio3,maycauseTCtothelowtemperaturetraverse.MayaccordingtoneedtoadjusttCurietemperatureTC.TheactualresistancenumberexpressedwithRT.Isundercertainambienttemperature,usescausestheresistancenumberchangenottosurpasstheresistancevaluewhich%surveypoweractualresistancevalueiscalledthezeroenergyresistancevalue,oriscalleddoesnotgiveoffheatthepowerresistancevalue(coldresistancevalue).Theactualresistancevaluesizeisdecidedbytheresistormaterialandthegeometryshape.Iftheactualresistancenumberowntemperaturehasthefollowingrelations:NTCIntheformula:RTtime11temperatureTactualresistancevalue;R1andresistancegeometryshapewithmaterialrelatedconstantB,A11materialconstants.Fortheeasytooperate,usuallytakestheambienttemperaturefor25°Ctotakethereferencetemperature,thenhas:NTCputstheresistorhotly:RT/R25=exp[B(1/T-1/298)]PTCgchangealongwiththetemperatureTchange,andisproportionalwithmaterialconstantB.Therefore,usuallywhilegivestheresistancetemperaturecoefficient,mustpointoutwhenthesurveytemperature,positivetemperaturecoefficienttaTinvaluesuperiorconstantA.Slowaberrationpositivetemperaturecoefficientvaluein%/°C110%/°Cbetween.Buttheswitch(mutant)positivetemperaturecoefficientTmayachieve60%/°Corhigher.MaterialconstantBisusesfortodescribethetmaterialphysicalproperty-parameter.Alsoiscalledthethermalsensitivitytarget.Intheoperatingregion,theBvalueisnotastrictconstant,hasslightlyalongwiththetemperatureascensionincreases.Ingeneral,theBvaluegreatelectronicresistivityisalsohigh.ThedifferentBvaluematerialhasthedifferentuse,likeordinarynegativetemperaturecoefficientmaterialconstantBvaluebetween2000yi5000K.ThenegativetemperaturecoefficientBvaluemayaccordingtotheequationbelowcomputation:Positivetemperaturecoefficientresistor,itsAvalueaccordingtoequationbelowcomputation:Intheformula,R1R2respectivelyistimethermodynamictemperatureT1andtheT2resistancevalue.2.thermalproperties(1)dissipationconstantHdissipationconstantHdefinedasthetemperatureeachincreaseoncediffusionpower.Itusesforwhendescribeswork,theresistanceelementandtheexternalenvironmentcarryonthehotconversationaphysicalquantity.DissipationconstantHanddissipatedpowerP.ThetemperatureincrementATrelationsareTheHsizeandthetstructure,locatestheenvironmentmediumtype,thevelocityofmovement,thepressureandtheheatconductionperformanceandsoonrelated,whenambienttemperaturechange,Hhasthechange. (2)capacityandthetime-constantrappliancehascertaincalorificcapacityC,thereforeithascertainwarm.Alsoisthetemperaturechangeneedscertaintime.WhentheisheateduptheT2temperature,putstothetemperatureisintheT0environment,doesnotaddtheelectricpower,thestartstodecreasetemperature,itstemperatureTisthetimetfunction,in△ttime.Themayindicatetotheenvironmentdiffusionquantityofheatis:H(T-T0)At,thispartofquantityofheatisprovidesbythetemperaturedecrease.Itsvaluefor-CAT,thereforehas:Expressedintheenvironmentatmospherethesteamcontentphysicalquantityisay.Thehumidityexpressionmethodhastwokinds,namelyabsolutehumidityandrelativehum(RH).Theabsolutehumidityisreferstointheatmospherethewatercontentabsolutevalue,therelativehumidityisreferstointheatmospherethesteamtopresswiththeidenticaltemperatureunderratioofthesaturatedsteamtension,expressedwiththepercentage.Thehumiditysensororthedewcellarerefertotheparaphrasetothehumiditysensitivepart,itmaybethewetsensitiveresistor,alsomaybethewetsensitivecapacitororotherdewcells.Thehumiditysensorclassificationclassifiesaccordingtothefeelingwetphysicalquantity,thehumiditysensormaydivideintothreebigkinds,namelywetsensitiveresistor,wetsensitivecapacitorandwetsensitivetransistor.Thehumidityresistormakeswhichaccordingtotheusedifferentmaterialmaydivideinto:Metaloxidecompoundsemiconductorceramicswetsensitiveresistor,forexample:MgCr2O4series,ZnO-Cr2O3series;Elementmaterialwetsensitiveresistor,forexample:SemiconductorGe,Si,SeandCelement;Compoundwetsensitiveresistor,forexample:LiCl,CaSO4,andfluorideandiodideandsoon;Highpolymerwetsensitiveresistorandsoon.ThewetsensitivecapacitormainlyistheporousAl2O3materialmakesasthemedium.Thewetsensitivetransistordividesintothewetsensitivediodeandthewetsensitivethreelevelsoftubes.Thewetsensitiveresistorprincipleofworkandthecharacteristic1,themetaloxidecompoundsemiconductorceramicswetsensitiveresistor(1)principleofworkporousmetaloxidecompoundsemiconductorceramics,inthecrystalplaneandthecrystalboundaryplace,veryeasytoadsorbtdrone.Becausethewaterisonestrongpolardielectricmedium,nearbythehydronehydrogenatomhastheverystrongelectricfield,hastheverybigelectronaffinity.Whenhydroneadherestostickcoherewhenthesemiconductorceramicssurface,willformtheenergylevelverydeepattachmentsurfaceacceptorcondition,butfromsemiconductorceramicssurfacecaptureelectron,butwillformtheboundstateintheceramicsurfacethenegativespacecharge,correspondinglywillappeartheholeinthenearsurfacelayertoaccumulate,thuswillcausethesemiconductorceramicselectronicresistivitydepression.Moreover,accordingtotheionelectricconductanceprinciple,thestructurenotcompactsemiconductorceramicscrystalgrainhascertaincrevice,revealstheporouscapillaritytubular.Thedronemayadsorbsthroughthiskindofporebetweenvariouscrystalgrainssurfaceandthecrystalgrain,becauseadsorbstheeseparablerelievesthemassiveelectricconductionion,theseionsareplayingtheelectricchargetransportationroleinthewateradsorbedlayer.alongwithhumidityincrease,materialelectronic•••1•11•1••••resistivitydrop.oxidecompoundsemiconductorceramicswetsensitiveresistorprincipalvarietyandstructureThemetaloxidecompoundsemiconductorceramicswetsensitiveresistortypicalproductincludes:MgCr2O4-TiO2wetsensitiveresistor,ZnO-Cr2O3wetsensitiveresistor,ZnO-Li2O3-V2O5wetsensitiveresistorandsoon.Forexample:TheZnO-Li2O3-V2O5wetsensitiveresistance,istakeZnOasthemainmaterial,isjoiningaprice,twoprices,threepricesandsoonothermetaloxidecompoundburnstheceramicssemiconductingmaterial,thesurveyhumidityscopeis5%~100%RH,themeasuringaccuracyis2%,isonekindofmoreidealdewcell,andmaymaketheminiaturization,thestructureissimple.2nd,elementmaterialwetsensitiveresistorkindofwetsensitiveresistorisapartwhichtheelementsemiconductingmaterialortheelementmaterialmake.Thecarbonwetsensitiveresistorisoneresistance-humiditycharacteristicisthedewcell.Withtheorganicmatterpolypropyleneplasticpieceorthestickaresubstrates,spreadsclothonetoincludetheconductivecarbongranuleorganictextilefiberconstitution.Thiskindofwetsensitiveresistorcraftissimple,isadvantageousfortheusestheorganicmaterialabsorptionofmoisture,thevolumeexpansion,betweenthecarbongranuledistanceincreases,thustheresistancevalueincreasesprinciple.Theelementsemiconductor,haveonthehoneycombelectrodeceramicsubstrate,iscomposed[granulediameterbythecharacteristicintheFe3O4colloidbytheparticleapproximatelyfor(100〜250)Xl0-8m],eachpelletonlythenamagneticdomain,therefore,thecocurrentpelletattractstheunionmutually,thusdoesnotneedthehighpolymermaterialtomakethecolloidbond,butcanobtainthegoodperformanceandthelongservicelife.Figure4-1istheFe3O4colloidwetsensitiveresistorstructuredrawing.Figure4-2istheFe3O4wetsensitiveresistorresistancehumiditycharacteristiccurve,displaysforthenegativefeelingwetcharacteristic.4th,thewetsensitiveresistorcharacteristic(1)resistance-humiditycharacteristicwetsensitiveresistorresistancenumberalongwiththehumiditychangeisgenerallytheindexrelationschange.温度传感器在种类繁多的传感器中，温度传感器在其产量和应用两方面都是数一数二的。热量及与之相关的温度是一个重要的物理参数，他几乎影响所有的物理、化学和生物医学进程的进行。因此，无论在工业、农业、科学研究、国防和人民日常生活方方面面，温度测量和控制都是极为重要的课题。随着电子技术和材料科学的发展，对各类新型的热敏元件及温度传感器要求结构先进、性能稳定，以知足对温度测量和控制提出的愈来愈高的要求。温度传感器的分类依照制造温度传感器的材料及工作原理进行分热敏电阻器工作范围热敏电阻器是指电阻值随温度转变而发生显著的转变的温度传感器它可以将温度直接转化为电信号。在工作温度范围内，其电阻随着温度的升高而增加的热敏电阻器称为正温度系数热敏制作PTC热敏电阻器通常采用钛酸钡（BaTio）陶瓷材料，单纯的BaTio陶瓷在常温度下具有极高的电阻率，在10833Q・m以上，故为绝缘体。若在BaTio中进行搀杂，可使BaTio半导体化，例如：33掺以%%%的稀土元素，而使其成为在常温下具有□•m的N行半导体。具有铁电性的半导体的BaTio，当温度达到居里点T时，它由四方晶系转变成立方晶系，3c此时其电阻率跃增几个数量级（倍）。正温度系数热敏电阻器（PTC）就是按照这个性质制作的。经半导体化的多晶粒结构的BaTio中，其晶粒（一般尺寸小约为33—10冲）内部为半导体性质；而晶粒间界为高阻区（具有铁电性）。当样晶外加电压时，电压大部份降落在高阻的晶界层上，因此晶界对材料的导电性能起作用。电子从一晶粒必需穿越晶界阻挡层势垒才能抵达另一晶粒在居里温度Tc以下，BaTio为四方晶系的强介电相，存在有自发极化很强的内部电场，使电子具有较3高的能量，从而穿越晶界势垒容易。而在居里以上，BaTio由四方晶系变成立方3晶系，自发极化消失，内部电场消失，电于穿越势垒困难，因此在居里温废c以上，电阻对于一般半导体材料，电阻率随温废的转变主如果依赖于载流子数量随温度的转变，温度升高，载流子数增加，导电能力增强.从而电阻率F降。对于过渡金属氧化物半导体，例由于它的受主电离能很小，在室温广大体已全数电离，即载流子浓度大体上与温度无关，此时，应主要考虑迁移率与温度之关系。由半导体物理知，迁移率由下式表达：可见金属氧化物半导体的电阻率随温度的转变主如果有迁移率随温度的转变而引发的。当温度升高时，电阻率下降，呈负温度系数特性。临界温度热敏电阻器（CTR）也属于负温度系数热敏电阻器。在某一临界温度范围内，其阻