集成电路integritycircuit学习以及常用封装介绍

集成电路INTEGRITY

CIRCUIT学习以及常用封闭介绍集成电路integritycircuit以及常用封闭介绍

ESD等級分類:

等級ESD敏感度(電壓)範圍典型設備00~100VEPROM,CMOS,MOSFET,GAAS,FET,SAM1100~1000VSCR,JFET,薄膜電阻,二極管21000~4000VProtectedMOS,SCHOTTKY,TTL,OP-AMPandLSI34000~1500V大多其它半導體一個問題

CMOS為何比TTL電路對靜電敏感?WHATISIC?1.從PN結說起2.晶體管3.場效應管4.兩種電路二极管

P-N结及其电流电压特性晶体二极管为一个由p型半导体和n型半导体形成的p-n结，在其界面处两侧形成空间电荷层，并建有自建电场。当不存在外加电压时，由于p-n结两边载流子浓度差引起的扩散电流和自建电场引起的漂移电流相等而处于电平衡状态。当外界有正向电压偏置时，外界电场和自建电场的互相抑消作用使载流子的扩散电流增加引起了正向电流：。当外界有反向电压偏置时，外界电场和自建电场进一步加强，形成在一定反向电压范围内与反向偏置电压值无关的反向饱和电流I0。当外加的反向电压高到一定程度时，p-n结空间电荷层中的电场强度达到临界值产生载流子的倍增过程，产生大量电子空穴对，产生了数值很大的反向击穿电流，称为二极管的击穿现象。

半导体技术发展史

年，法拉第发现硫化银（AgS）电阻率的负温度系数，是目前所知对物质半导体特性的最早发现。年，硒（Se）整流器出现。年，贝尔实验室的肖克莱（W.Shockley）、布拉顿（W.H.Brattain）和巴丁（J.Bardeen）发明晶体管并于1956年获诺贝尔物理学奖。年，江琪（L.Esaki<）发明了隧道二极管。年，诺依斯（R.Noyce）研制成功了世界上第一块集成电路。半导体技术发展史

年，约瑟夫逊（B.D.Josephson）提出了超导隧道结。年，采用2um工艺，集成元件数达10万个的64KDRAM研制成功。年，16MDRAM研制成功。年，64MDRAM研制成功。年，1GDRAM研制成功。‧‧‧‧‧‧PIIII

中國芯三极管

三极管相当于两个背靠背的二极管PN结。正向偏置的EB结有空穴从发射极注入基区，其中大部分空穴能够到达集电结的边界，并在反向偏置的CB结势垒电场的作用下到达集电区，形成集电极电流IC。在共发射极晶体管电路中,发射结在基极电路中正向偏置,其电压降很小。绝大部分的集电极和发射极之间的外加偏压都加在反向偏置的集电结上。由于VBE

很小，所以基极电流约为IB=5V/50kΩ=0.1mA。如果晶体管的共发射极电流放大系数β=IC/IB=100,集电极电流IC=β*IB=10mA。在500Ω的集电极负载电阻上有电压降VRC=10mA*500Ω=5V，而晶体管集电极和发射极之间的压降为VCE=5V，如果在基极偏置电路中叠加一个交变的小电流ib，在集电极电路中将出现一个相应的交变电流ic，有ic/ib=β，实现了双极晶体管的电流放大作用。

場效應管金属氧化物半导体场效应三极管的基本工作原理是靠半导体表面的电场效应，在半导体中感生出导电沟道来进行工作的。当栅G电压VG

增大时，p型半导体表面的多数载流子棗空穴逐渐减少、耗尽，而电子逐渐积累到反型。当表面达到反型时，电子积累层将在n+源区S和n+漏区D之间形成导电沟道。当VDS≠0时，源漏电极之间有较大的电流IDS

流过。使半导体表面达到强反型时所需加的栅源电压称为阈值电压VT。当VGS>VT

并取不同数值时，反型层的导电能力将改变，在相同的VDS

下也将产生不同的IDS,实现栅源电压VGS

对源漏电流IDS

的控制。模擬電路數字電路放大電路直流單級變壓器耦合阻容耦合直接耦合差動放大交流多級交流單級直流多級集成運放門分立門集成門TTL門電路MOS門電路組合門集成邏輯電路WHATISTTL?TTL與非門的輸入端和輸出端都是三極管結構,所以稱三极管-三极管邏輯電路.即TTL電路或T2L電路.典型TTL與非門:三態輸出門TSLTRISTATELOGIC

高電平低電平高阻態●典型應用

1.TSL組成總線結構

2.TSL實現數據雙向傳輸WHATISMOS?MOS:金屬氧化物半導體場效應管MOS電路可分為NMOS,PMOS,CMOS相對TTL,有以下特點1.微功耗—CMOS电路的单门静态功耗在毫微瓦（nw）数量级。

2.高噪声容限—CMOS电路的噪声容限一般在40%电源电压以上。

3.宽工作电压范围—CMOS电路的电源电压一般为1.5~18伏。

4.高逻辑摆幅—CMOS电路输出高电平‘1’的幅度=VDD，逻辑“0”为VSS。5.輸入阻抗高CMOS电路的输入阻抗大于108Ω,一般可达1010Ω。6.扇出能力強CMOS电路的扇出能力大于507.低输入电容--CMOS电路的输入电容一般不大于5PF。8.宽工作温度范围—陶瓷封装的CMOS电路工作温度范围为-550C~1250C；塑封的CMOS电路为–400C~850C。9.所有的输入均有珊保护电路，良好的抗辐照特性等。10.工作速度低11.功耗隨頻率增加顯著增大基本概念Integratedcircuit.集成電路是相對分立元件而言,就是把整個電路的所有元件以及相互之間的聯接同時制造在一塊半導體芯片上.MPU存儲器I/O運算器控制器ROMRAM總線ABDBCBA/D&D/A定時器/計數器中斷控制器一個超級芯片電路几乎包括了所有IC的種類電源IC的封裝packageIC的封裝packageSSOP寬度比SOP窄SOJ相對SOLPLCC相對QFPLCCC(leadlessceramicchipcarrier)

無引線陶瓷芯片載体

STMicroelectronicsEEPROMOrderMemorycapacityInput一個現象‧‧‧OutputOFFONInputOutputWHOISME?IWASMEMORY!半導體存儲器用于存儲程序、常數、原始數據、中間結果和最終結果存儲容量越大,記憶能力越強存取速度越快,運算速度越快IC中不可或缺的一部份.技術指標1.存儲容量2N－12.最大存取時間

133MZ→?NS3.存儲器功耗(維持功耗、操作功耗)4.可靠性(抗干擾能力)5.集成度(BIT/PCS)INTEL2764集成度為64KBIT/PCSLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryKindsofMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousDefineVolatileWhatdoestheword“volatile”meantoyou?Non-Volatilevs.VolatileMemoryNon-Volatilevs.VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHE²NANDNORVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerRETAINS

datawith

powerlossLOSES

datawith

powerlossWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneOperatingSystemNon-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneScratchMemoryVolatile快速緩衝貯存區CacheMemory

inaPCWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?VolatileVolatileOperatingSystemforaHandHeldDeviceWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?Non-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?緩衝存儲器BufferMemoryinaHigh-endRouterVolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?DigitalCameraPictureStorageNon-VolatileSectionSummaryYoushouldnowbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryNon-VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousROMRead-OnlyMemoryBitpatternispermanentlyrecordedduringthemanufacturingprocess(requiresamask)Exampleuse:PagerOperatingSystemReadSpeed: GoodWriteSpeed: N/ASize: Upto4MbPower: LowFromByteMagazine,April1996PROMProgrammableRead-OnlyMemoryProgrammedusingaPROMprogrammerProgrammersendselectricsignalsatahighvoltagetospecificROMcells,effectivelyblowingfusesinthemCanbemodifiedonce-OneTimeProgrammable(OTP)Exampleuses:ColortableinflatpanelTVCableSetupBoxReadSpeed: OKWriteSpeed: PoorSize: 256Kb-8MbPower: VariesEPROMErasableProgrammableRead-OnlyMemoryProgrammedusinganEPROMprogrammerCancomeinwindowedpackagetoallowerasing/programmingErasedusingUltraviolet(UV)raysLimitedprogrammabilityMoreexpensivethanPROMIncludeEEPROMandUVEPROMExampleuses:MemoryforprototypesofIndustrialapplicationsReadSpeed: OKWriteSpeed: PoorSize: 256Kb-4MbPower: HighEEPROMElectricallyErasableProgrammableRead-OnlyMemoryProgrammedusingaprogrammerorwithJTAG(CPLD)CanbeerasedandreprogrammedbyapplyinghigherthannormalelectricalvoltageCanreplacepartoftheprogramming--noneedtoeraseitallNoneedtoremovewhenerasingorprogrammingExampleuses:PrimarilyusedindevelopmentReadSpeed: OKWriteSpeed: Poor-ModSize: 256Kb-4Mb

(to1Mbforserial)Power: LowUVEPROM紫外線擦洗FlashMemoryVariationofEEPROMErased/programmedin“blocks”CanreplaceblocksofthedataNoneedtoremovetoprogramSomeEEPROMsalsohavethisProgrammedviaEEPROMprogrammerorseriallyviaaprocessororJTAGExampleuses:DigitalCameraPictureStorageSmartMediabyToshiba(seeleft)ReadSpeed: OKWriteSpeed: PoorSize: 1Mb-64MbPower: HighBitsvs.Blocks(MinimumProgrammingSize)bitbyteblockMostNon-VolatileMemory-programmedinbitsVolatileMemory(RAM)-programmedinbytesFLASH-programmedinblocksROMTypesSectionSummaryYoushouldnowbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryVolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousWhatIsRAM?RandomAccessMemoryVolatile-DatalostwhenpowergoesoutAllowsnon-sequentialaccessCanaccessthedataatanylocationwiththesamespeedDRAMDynamicRandomAccessMemoryDataisstoredasachargeDatamustberefreshedconstantlyAdvantagesHugedensitiespossibleLessexpensiveDisadvantagesSlowaccesstimes(around60nanosec)HigherpowerconsumptionthanSRAMDRAMCharge“leaks”outofcapacitorandmustberefreshedOnetransistorandonecapacitorpermemorycellWordLineBitLinecapacitortransistor01DRAMCellDesign1-bitDRAMCellVoltagestoredinaDRAMcellafterwritingandrefreshoperationsVcapHIGHLOW0VVccrefreshrefreshrefreshrefresh‘1’Written‘0’storedtime01SRAMStaticRandomAccessMemoryNoneedtorefreshthedataDatastoredascurrentinatransistorAdvantagesLowerpowerconsumptionthanDRAMFasteraccesstimes(aslowas10nanosec)MorereliablethanDRAMDisadvantagesLessdensity(SRAMcellislargerthanDRAMcell)MoreexpensivethanDRAMDRAMvs.SRAMDynamicForgetsdatain5/100thsofasecondCheapestformofmemoryLargerdensitiesavailableStaticRetainsdataaslongasthepowerismaintainedFasttorespondLowPowerMorereliableDRAMSRAMCacheMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileSRAM(speedisimportant)MainMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileDRAMWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?CellPhoneDataSRAM(powerisimportant)PrinterBufferMemoryWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?DRAM3KindsofSRAMMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousAsynchronousvs.SynchronousAsynchronousPizzaOrder“Bringmeapizza

assoonas

itisready.”Asynchronousvs.SynchronousSynchronousPizzaOrder“Bringmeapizza.Meetmeatthecornerof5thandElmin30minutes.”AsynchronousSRAMNoclocking--nottimed(1in,1out)HeavilyusedinlegacysystemsCommonlycalled“CommodityMemory”UsedinapplicationswherespeedisnotcriticalAdvantagesInexpensiveReadilyavailableLegacytechnology(beenaroundalongtime)Nolatency(bitsmovetogether)DisadvantagesHavetowaittodoanythingLessdensethanDRAMMoreexpensivethanDRAMSlowaccesstimescomparedtoSyncSRAMNewerhighdensityproductsavailableonlyinSyncSynchronousSRAMDatasynchronizedtoacommonclock(pipelined)Usedforhigh-performanceapplicationsthatrequirefasterspeedsAdvantagesNew&continuedimprovementtothetechnologyPredictabletimingFasterspeedpossibleDisadvantagesMoreexpensivethanasynchronousNotmadeinlowdensities(under1Mb)AddslatencytodataaccessMicropowerSRAMExtremelylowpowerneedsCurrentlyakindofasynchronousSRAMWillbeasynchronousandsynchronousinthefutureSlowaccesstime(70nsorslower)AdvantagesLowpowerneedsinstandbyNewimprovementsallthetimeDisadvantagesSlowaccesstimesMicropowerBatteryLifeBatteryLife1999 2000 2001 2002LowPowerHigherFrequencyLowPowerTypesofSRAMWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneDataMicropowerWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?ModemAsyncAsynchronousSRAMBufferMemoryinaHigh-endRouterWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneOperatingSystemNoneTelecommunicationsSwitchingSystemWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?Sync(performance)3GCellularBaseStationWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncSectionSummaryYoushouldnowbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemory

HowisanICManufactured?IC的成長歷程ICFABProcessFabSlicedWafersCompletedWaferLayersConductive PolySiliconMetalInsulatingPhotoResistPatternPlasmaEtch等離子酸刻RepeatProcessWaferwithMetalCircuitPatternICFABProcess晶圓排序WaferSortWaferICASSEMBLYProcess目檢SAW粘貼BOND封裝MOLDTRIMANDFORMICTESTProcessTestTESTProgramICDIMENSIONTESTProcessLeadscanGoodDeviceRejectedDeviceOpticalScanningEquipmentisusedtoexamineeachleadtodetermineifit’spitch,angleandcoplanarityarewithinspecifiedlimits.ICMARKProcessMarkBlankDeviceLaserMarkInkMarkCypressSHIPPINGMethodsStandardTubesTapeandReelStandardTrayDryPackICMANUFACTURINGProcessFABASSEMBLYTESTFPOF/G(3-5weeks)(1-2weeks)(1week)(2weeks)DieBankBinInventoryWaferFabricationDeviceAssembly&PackagingElectricalClassTestFinalProcessingOperationsFinishedGoodsAreasinvolvedintheStandardManufacturingProcess:InventoryStagingLocationInventoryStagingLocation(4-5weeks)(3-5weeks)(7-10weeksTotalCycletime)PACKAGINGCAPABILITYPKGPKGwidthavailableleadcountPDIP300mil8,14,16,18,20,24,28,32,64600mil22,24,28,32,40,42,48,56SOJ300mil20,24,26,28,32400mil24,28,32,36,40,42,44SOJ-TapeLOC300mil24400mil42SOP8,14,16,24,28,32SSOP48,56TSOP(I)28,32,40,48TSOP(II)20,24,40,44,50,54TSOP(II)-TapeLOC40,44PKGbodysizeavailableleadcountPLCC20,28,44,52,68,84QFP10X10mm44,48,5214X20mm64,80,100,12828mmSQ120,128,132,144,160,208,25632mmSQ24040mmSQ304LQFP7mmSQ32,44,4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,12814X20mm100,12820mmSQ144,160,17624mmSQ160,176,21628mmSQ160,208,256TQFP7mmSQ4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,128In-line&staggeredpadsconfigurationBGApadsconfigurationPKGPKGsizeballpitchavailableballcountPBGA14X22mm1.27mm119,15315mmSQ1mm156,196(fullmatrix)17mmSQ192,208,256(fullmatrix)19mmSQ256(fullmatrix)23mmSQ1.5mm120,144,160,169(fullmatrix)27mmSQ1.5mm225(fullmatrix)1.27mm256~36531mmSQ1.27mm272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665PKGPKGsizeballpitchavailableballcountViperBGA27mmSQ1.27mm25635mmSQ35240mmSQ432PKGavailableballcountL(F)BGA66~256T(F)BGA36~256PKGavailableballcountFilmBGA112,132,144,180,208,280mBGA62FC-CSP36~200COS54BCC/BCC++8,16,20,24,32,48,64

OUTLINE&DIMENSIONSOJFig.160umin-lineballbondprofileFig.2Straightwiresfrom170to200mil(4.3to5.1mm)inlengthwith60umin-linepadpitchFig.3Aftermolding.WiresweepisundergoodcontrolFig.6StaggeredbondFig.4Slanted&Rightfan-out(d1isnarrowerthand2)

PROCESSFLOWSTANDARDMATERIAL

WAFERMOUNTWAFERSAW/CLEAN2ndOPTICAL(GATE)DIEATTACHEPOXY: ABLESTIK8355FSUBSTRATE:BTRESINDIEATTACHCUREPLASMACLEANWIREBONDGOLD WIRE:99.99%Au3rdOPTICAL(GATE)PLASMACLEANMOLD COMPOUND: PLASKONSMT-B-1 Series/TOSHIBAKE-1100A TOPSIDEMARKINGWHITEINKPOSTMOLDCURESOLDERBALLMOUNT SOLDERBALL:Sn/Pb=63/37FLUXCLEAN FLUX:WATERSOLUBLESINGULATIONFINALVISUALINSPECTION(GATE)PACKING BAKEABLEJEDECTRAYOPTIONALPROCESS:WAFERBACKGRINDING/DRYPACKING常用IC封裝介紹BGAIC封裝介紹

PROCESSDEVELOPMENTProcessforICpackagingisupdatedsoonforseveralreasons.Thefirstistheever-reducingscaleinwaferfabricationtechnology.Thesecondisthedemandsforhighcircuitryintegration,andthethirdisthedemandsforhighperformance.MCM,oneoftheprominentpackagingtechnology,canprovidehighI/Obyintegratingtwoormorechipsintoasinglepackage.2Dand3DMCMsareavailablenow.FinePitchisrelatedtotheprocessissuesabouthowmuchthebondpadcanbenarroweddown,andhowtodesignthebondpadsinordertomeettheminimumcriterionofwirebonding.CurrentwirebondingcapabilityofASEisalsopresented.FlipChip/WaferBumpingisthesolutionstoKGD(knowngooddie)onCOB(chiponboard),andprovidesthedensestI/Opadroutingonwholechip.Flipchipalsoelimin