IC工艺技术3-刻蚀

讲座提要1. General 1.1 Isotropic/Anisotropicetch(无定向/定向刻蚀) 1.2 Facility(动力环境)2. Wetetch 2.1 Wetetchmechanism（湿化刻蚀机理） 2.2 BOEetch（氧化硅刻蚀) 2.3 Aluminumetch(铝刻蚀) 2.4 Nitrideetch(氮化硅刻蚀) 2.5 Poly/siliconetch(多晶硅/单晶硅刻蚀) 2.6 DIwaterrinseanddry3. Dryetch 3.1 PlasmaTheoryandapplication(等离子理论和应用) 3.2 Typeofplasmaetch(等离子刻蚀种类) 3.3 Etchinggasesandpressure(刻蚀气体和低压） 3.4 Etchprocesshighlight(刻蚀工艺简介) 3.5 Etchprocessparameter(刻蚀工艺参数) 3.6 Ionmilling(离子铣) 3.7 BCDplasmaetchingequipmentandapplication5. Nextetchprocess未来的刻蚀工艺第一页，共80页。1.1GeneralIsotropicetch(无定向刻蚀)Etchinghasnodirection.Wetetchoraplasmaetchwithoutsidewallpassivationprocess.Itcausesundercutduringtheetchingandchangecriticaldimension.Anisotropicetch(定向刻蚀)EtchwithdirectionorsidewallprotectionIonmilling,RIEortheplasmaetchwithenoughsidewallpassivationprocess.Afteretch,criticaldimensionhasnochangeorveryslightlydifference.第二页，共80页。Isotropicetch(无定向刻蚀)Anisotropicetch(定向刻蚀)Resist第三页，共80页。1.2 FacilityDIwater(去离子水)17mhomDrain(排水)SpecialchemicaldisposesystemExhaust(排风)CompressairandNitrogen(加压空气,氮气)Inhousevacuum(真空管道)Coolingwater(冷却水)Gascabinet/Gasline(气柜,气体管道)Gasbottle(气瓶)第四页，共80页。2.0 Wetetch

AdvantageanddisadvantageChemicaletch(化学刻蚀）---isotropyCDloss（线宽变小）Highparticlecontamination（高颗粒）Unableforsmallgeometry(不能用于小尺寸工艺)Higherprocesscost（工艺费用高）Mostofwetetchprocesshavehighselectivitytotheunderlayer（高选择比）Fastthroughput（产量高）Lowequipment(investment)cost（投资少）第五页，共80页。2.1.1 Wetetchmechanism（湿化刻蚀机理）WafersurfacewettingandcontactwithetchchemicalChemicalreactiontakesplace,solublebyproductformation.Removebyproductfromwafersurface

Theetchrate(anduniformity)affectsbyTemperatureThesloweststepofoneofabovestep第六页，共80页。2.1.2 Wetetchbyproduct(副产物)Partofbyproductwillbeconvertedtowatersolublematerial.(水溶性)Partofbyproductwillconvertedtogasform. Ifthegascannotberemovedfromthewafersurfacesoonenough,theproblemwilloccur * Blocketch---snow(雪花) * Hidingatedgeofresist---lifting(浮胶)第七页，共80页。2.1.3WetetchimprovementImprovementmethodPre-wet---wettingagent（湿润剂）Agitation（搅动）Circulation（循环）Temperaturecontrol（温度控制）Filtration（过滤）Inavacuum（真空）Sprayetch（喷洒）Vaporetch（蒸发）Selectionofhighpurityofchemical（选择高纯度化学药品）第八页，共80页。2.2.1BOEetch

BOE(Bufferoxideetch) mixedwithHFandNH4FChemicalreaction

SiO2+6HF H2SiF6+2H2O

NH4FNH3+HFNH4F(bufferagent–缓冲剂) keepaconstantHFconcentrationduringreaction

NH3---controlPHvalue

第九页，共80页。CDlostinBOEetch（氧化硅刻蚀)

第十页，共80页。BOEetchsink（氧化层刻蚀水槽)

第十一页，共80页。2.3Nitrideetch（氮化硅腐蚀）Phosphoricacid(磷酸）---H3PO4Heatupto140to200oCConstantwatercontain（稳定水含量）Etchrate~50A/minat165oCSelectivitytooxide~10:1Selectivitytoundopedsilicon>30:1SelectivitytoN-siliconismuchpoorer(higherdopingfasteretchrate)第十二页，共80页。2.4 AluminumEtch(铝刻蚀)Chemical Phosphoricacid 77% Aceticacid 20% Nitricacid 3%EtchTemperature 30to70oC(keepetchtimefrom3to5min)Etchtime Manual/autoendpointEtchrateaffect Temperature AmountofNitricacidByproduct AluminumAcid-ate HydrogenEquipment Manualetchbath Automaticetchsink Waterflowetch(Watanabe) Vacuumetcher Sprayetcher(Dinippon)第十三页，共80页。FewspecialissuesinAluminumEtchSnow--- TherearealotofH2arereleasedduring etching.Inthehighviscosityacid,theH2 bubbleiseasilytoattachonthewafersurface butcannotfloattothesurface.Itblocksthe etching. *Agitation---mechanical *Waterflow---mechanical *Spray---mechanical *Vacuum---reducesurfacetensionResidue--- Whenetchaluminumalloyfilm,thesiliconis unabletobeetchedintheacid.Itwillleaveon wafer. *Defeckleetch---mayattackaluminum *Plasmaetch---residueisdifficulttobeetch indensearea第十四页，共80页。2.5Poly/siliconetch(硅刻蚀）Chemical 1.HNO3+

HF(8:1) 2.KOHsolution(forsignalcrystalsilicon)Polyetch Polyneedoxidemask DilutetheHF/HNO3withaceticacidorDIH2O

Siliconetch HF/HNO3etchwithnodirection KOHetchwithdirection---alongcrystalline第十五页，共80页。Wetetchtable第十六页，共80页。DIwaterrinseequipmentCascade---Slow,initialbathcontainweakchemicalQDR(QuickDumpRinser) Fast,CreateESD(particle),Cycletime,numberofcycleSprayrinse---Runwithdryer*HotDIwaterisincreasingtherinseefficiency2.5DIwaterrinseanddry第十七页，共80页。Waferdry Mechanicaldry---

(particle,residue)Multiplecassettesspindry FSISinglecassettespindry Semitool

ChemicalDryFreonvaporHotwater/airdry AlcoholvapordryAlcoholdry

第十八页，共80页。3.0Dryetch（干化刻蚀）AdvantageanddisadvantageAnisotropyetch(定向刻蚀)CDlossundercontrol（线宽可控制）Etchsmallgeometry（小尺寸刻蚀）Simpleprocess(dryin–dryout)（简单程序）Lowprocesscost（低成本工艺）Plasmadamage（刻蚀损害)Lowselectivity（低选择比）Lowerthroughput（产量低）Highequipmentcost（投资高）第十九页，共80页。3.1 PlasmaTheoryandapplication

(等离子理论和应用)Definitionofaplasmaisapartiallyionizedgasthatiselectricallyconductive.Plasmaenergycanbeusedtoactivatechemicalreactionsandtoetchordeposituponsurfacesexposedtotheplasma第二十页，共80页。Often,electricalpoweriscoupledintoaplasmabymeansofparallelmetalelectrodesTheaccelerationofelectronsistheprincipalmeansbywhichenergyiscoupledintotheplasma.Theamountofenergygainedbyaelectronisequaltotheforceonittimesthedistance第二十一页，共80页。第二十二页，共80页。Plasmadensity

Inaplasma,wehaveseenthatnewfreeelectronsaregeneratedbyelectron-impactionizationgasatomsandmolecules.Atthesametime,manyofelectronlosttotheelectrodeandothersurroundingsurface.Sotheplasmastabilizeatadensityofelectronsforwhichthegenerationrateisbalancedbythelossrate. Thisstabilizedelectronleveliscalledtheplasmadensity.第二十三页，共80页。Foragivenreactor,plasmadensityisdeterminedbyfourprincipleinputs:1. Thevoltageappliedtotheelectrode Higherappliedvoltageleadstomoreelectronenergygainbetweencollisions2. Thegascomposition Themoleculethathasweakermoleculebondiseasierigniteplasma3. Thegaspressure Gaspressureaffectsplasmadensitythroughthecollisionrate.Inhigherpressure–shortermeanfreepath.Atlowvoltage,toomuchenergylostinnon-ionizingcollisionandplasmadiesout.Athighvoltage,oneelectroninitialssomanyionizingcollisionsthatanexcessivelyconductpathiscreatethroughtheplasma,itcausearcing.Toolowpressure,gascrosstheelectrodegapbeforetheygenerateenoughionizingcollisions.4. Theapplicationofamagneticfield Amagneticfieldcanbesetupacrossaplasmareactorusingexternalmagnets.Electronattemptingtocrossthemagnetizedplasmawillhaveamuchlongerpathlengthinwhichtoencountercollisionwithgasmoleculesbeforetheyarelosttotheelectrode.Thismeansthatthepressurecanbemuchlowerbeforethecollisionratebecomesinsufficienttosustaintheplasma.第二十四页，共80页。InhighpressureplasmaAddedamagneticfield第二十五页，共80页。Etchtheory---ionbombardment Theelectronaremuchlessmassivethantheions,sotheymovemuchmorerapidly.Theresultinadepletionofelectrodeofelectronsfromthespaceabovethecathode.Theionslefthereconstituteapositivespacecharge.Theregionofpositivespacechargeiscalcathodesheath.Constrictingthevoltagedropinthiswayincreasetheforceontheionsinthesheathandcausethemtobeacceleratedintocathodewheretheyarrivewithconsiderableenergy~500electron-volts第二十六页，共80页。Etchtheory---ionbombardmenteffectElectronemission--- emissionthesecondaryelectrons thathelpsustainthedirect-current plasma.Chemicalactivation--- Chemicalreactiveandphysical bombardmentMomentumtransfer--- Nochemicalreaction,move surfaceatomtoremoveofimpurity atomsbyevaporation第二十七页，共80页。ACplasma

TheaboveDCplasmatheoryistobeusedtoillustrateabasicofplasma.TheACplasmaisusedinrealtime.ThecathodeandtheanodeisalternatinginaACpowersource.ThefrequencyoftheACpowerisselectedtobeusedinthisindustry.Thelowestfrequencytomaintainaplasmais100KHz13.56MHzRF(radiofrequency)ismainlyusedinsemiconductorfieldWaferthatsitsonpowerplatereceivesmorebombardmentWaferthatsitsongroundplatehaslessplasmadamage第二十八页，共80页。Plasmaetchmechanism(等离子刻蚀机理)

Thepositiveionaredrawntothecathode,andthenegativeionstoanode.Inamediumpressurediodereactor,only1in50,000ofthegasmoleculesareionized.Therefore,ionsarenotthemaindriversintheetchprocess,althoughtheyplayamajorrole. Becausefreeradicalsareneutral,theybehavemuchlikestandardgasmolecules.Whenagasmoleculefragmentsintheplasma,eachfreeradicalformedtakesupasmuchspaceastheoriginalmolecule.(Thisiswhythepressurejumpswhenaplasmaignites)Theyaremorereactivethantheywereintheiroriginalform,andareimportantetchratedrivers.Freeradicalsareverylong-livedinavacuumenvironment.第二十九页，共80页。Plasmaetchmechanism(等离子刻蚀机理)第三十页，共80页。Plasmaetchmechanism第三十一页，共80页。CF4etchChemicalreaction(CF4刻蚀化学反应)第三十二页，共80页。Plasmaetchmechanism(等离子刻蚀机理))第三十三页，共80页。Plasmaetchmechanism(等离子刻蚀机理)FewnotesinCF4plasmaetch

Theplasmacontainsenergeticionswhichbombardthewafersurface,aswellasothersurfaceinthereactorchamber.Theyareacceleratedacrossthevoltagedropregionatthesurface,andcollidewithitathighspeed..Thisionbombardmentisalsocausesanodizationwear. Duringthesiliconetch,themostprevalentchemicalreactionproceedsasfollows: 4F*+Si---SiF4 AstheSiF4gasforms,itispumpedaway.Thebi-product(CFpolymer)depositsonthewaferaswellasinthechamber.Onlythepolymeronwafersurfacethatreceivebombardmentwillberemoved.Theetchprocesscontinuesaslongasthedepositionrateofthepolymerdosenotexceeditsetchrateduetoionbombardmentandgasreaction.Whenetchhitstheunderlayer,SiF4formationdecrease.ThelightemissionfromtheSiinplasmadecrease.Theetchingcanbesignedtoreachendpoint第三十四页，共80页。3.2 Typeofplasmaetch

(等离子刻蚀种类)

Operating Frequency Pressure EquipmentBarrel 13.56MHz 500mt IPCDownstream 2.45GHz 2torr GasonicA1000Parallelplate 13.56MHz 300mt Lamautoetch, Rainbow4400,4600,4700 Tegal700,800,900Triode 13.56MHz(T) 300mt Tegal1500,1600 100KHz(B) Drytek384TSPRP 400KHz 200mt LamRainbow4500MERIE 13.65MHz 100mt Precision5000RIE 13.56MH 20mt AME8000TCP 13.56MHz(P) 1-5mt Lam 13.56MHz(B)DPS 13.56MHz(P) 1-5mt Centrura 13.56MHz(BMRE 13.56MHz(T) 3mt Tegal6000 800KHz(B)ECR 2.45GHz(T) 0.5-5mt Hitachi 13.56MHz(B)Helicon 0.5-5mt 第三十五页，共80页。IPCbarreletcher13.56MHzUseoxygenonlyforresistashingat1torr/500wUseCF4/O2foretchingat0.5torr/250w第三十六页，共80页。Tegal900seriesParallelplateetcher第三十七页，共80页。Lamautoetch490/590Parallelplateetcher第三十八页，共80页。Tegal1500/1600seriesTriode-dualfrequencyetcher第三十九页，共80页。AME8300SeriesAME8100seriesisthemanuallywaferloadingsystemAME8300seriesistheautomaticallywaferloadingsystem

AME8310---Oxideetcher AME8330---metaletcher AME8340---polyetcher第四十页，共80页。LamRainbowetcherRainbowisthenameofLametchplatform4400isapolyetcherusedRFpower,wafersitsonground.4500isanoxideetcherusedSPRPpowersource4600isametaletcher,wafersitsonpowerelectrode.第四十一页，共80页。ECR第四十二页，共80页。Gasonic1000UsemicrowavepowerfordisassociateGas第四十三页，共80页。Trendsinplasmaetchchemistry1MaterialbeingetchedConventionalchemistryNewchemistryBenefitsPolysiliconCL2or/CCL4BCL3/CF4/CHCL3/CHF3/sidewallpassivatinggasesSiCL4/CL2BCL3/CL2HBr/CL2/O2HBr/O2Br2/SF6SF6/25%O2Nocarboncontaminationincreasedselectivitytooxide&resistnocarboncontaminationhighetchratePolycidesCL2+HBrtoclearSinglecrystalSiCL2orBCL3+sidewallpassivatinggasesCF3BrHBr/NF3HICL2/ArHighselectivity-trenchHighselectivity-100:1trenchAlCL2+sidewallBL3passivatinggasesSiCL4SiCL3/CL2BCL3/CL2HBr/CL2BetterprofilecontrolNocarboncontaminationAl-Si(1%)-Cu(0.5%)SameasAlBCL3/CL2+N2N2acceleratesCuetchrate3.3 Etchinggasesandpressure

(腐蚀气体和低压）第四十四页，共80页。Trendsinplasmaetchchemistry2MaterialbeingetchedConventionalchemistryNewchemistryBenefitsAl-Cu(2%)BCL3/CL2/CHF3BCL3/CL2+N2+AlAdditionalAlhelpsetchCuWSF6/CL2/CCL4SF6/ArNF3/CL2CL2/O2EtchstopoverTiWandTiNTiWSF6/CL2/O2SF6+ArorN2TiNAr/CL2WSi2,TiSi2,CoSi2CCL2F2CCL2F2/NF3ControlledetchprofileNocarboncontaminationSiO2(BPSG)&(PSG)CCL2F2CF4C2F6C3F8CCL2F2CHF3/CF4CHF3/O2CH3CHF2CFCalternativesPSGonTiSi210:1Si3N4CCL2F2CF4/O2CF4/H2CHF3CH3CHF2CFCalternatives3.3 Etchinggasesandpressure

(腐蚀气体和低压）第四十五页，共80页。3.3 Etchinggasesandpressure

(腐蚀气体和低压）

Pumpsusedinsemiconductorprocess AppliedPressure VacuumRangeMechanicpump 10-2 760-10-3 机械泵Mechanicpump/blower 10-2 760-10-3 机械泵+罗茨泵Diffusionpump 10-5 10-3-10-7 扩散泵Turbomoleculepump 10-5 10-2-10-10 分子泵(50000rpm)Cryopump 10-7 10-6-10-12 冷泵第四十六页，共80页。3.3 Etchinggasesandpressure

(腐蚀气体和低压）Pumpsusedinetchprocess

DrypumpstackTurbopumpOilpumpOilpumpStack第四十七页，共80页。3.4 Etchprocesshighlight

(腐蚀工艺简介)PolysiliconetchNitrideetchOxideetchAluminum/aluminumalloyetchPolycidesetchSOGetchW/TiW/TiNetchResistetch(ash)Typeofetchprocess第四十八页，共80页。Polysilicon&salicidesEtch

PolysiliconcanbeetchedbyCF4,SF6orCl2chemistryinaparallelplateetcher,butonlytheCl2processisananisotropicprocess.

Herearesomemoreadvancepolysiliconetchrecipesandsaliciderecipes:

1.CL2withECRuwaveplasma,875gauss, etchrateincreaseswithCL2flow,etchingby neutrals,lowerstheflowrate,increasesions andincreasesanisotropicprofile; 2.MERIEofsilicideoverpolysilicon(salicide) ongateoxide;CL2at-80Vd.c.biasfor silicide,reduced.c.biasandpowerdensity forpolyetchtoendpoint,switchtoHBrto clearwindowsofstringers,etc.第四十九页，共80页。Silicondioxideanddopedglasses-sidewallspaceretching Useasinglewafersystem,thetypicaletchchemistryisCHF3/C2F6(CF4)/He.Itremovesbulkofoxideintimedcycle,reduceC2F6(CF4)flowpower,increaseselectivitytopolyto11:1toendpoint.Reducetemperatureonwaferelectrodewillincreaseselectivity. TCP,NF3+He,improvedselectivityoxidetopolyof60:1to100:1,--600nm/minforBPSG.第五十页，共80页。Aluminumalloysandsandwichmetalsystems ChlorinebasedcompoundsetchAlandAl+Sireadily.Theadditionofcopperisaproblem,becausethevolatilityofCuClxisverylow.Mostmetaletchingisdonebyion-enhancedprotectivewithBCL3+CL2+CHF3,followedbypostetchtreatmentinafluorine-richplasmatoexchangetheadsorbClwithnon-corrosiveF.TheadditionofN2andAlincreasestheetchrateofCu.第五十一页，共80页。Photoresist

Oxygenplasmaareastandardmethodforstrippingphotoresistbyashing.Damagecanoccurduringthisrelativelyuncontrolledoperation.Widelyacceptedarethemetalatomsandioniccontaminationpresentintheresist,whicharenotremovedintheplasma.Acombinationofdryandwetstrippingispreferred.第五十二页，共80页。3.4 Etchprocesshighlight

(腐蚀工艺简介)Breakthrough Removenaïveoxide---lowerselectivityBulketch(Mainetch) Highetchrate,maximizedselectivity, optimumselectivityOveretch Goodendpointsignal,highselectivityto under-layermaterial* ResistremovalPartiallyorcompletelyremoveresistThemajoretchsteps第五十三页，共80页。3.5 Etchprocessparameter

(刻蚀工艺参数)Etchrate(everysteps)(刻蚀率）etchuniformity(everysteps)(刻蚀均匀度）Selectivity(tobottomlayermaterial/ resist/impurityinfilm)(选择比）Endpointdetection(终点检测）Loadingeffect（负载效应）Residue（残余）Damage（损伤）Throughput（产量）第五十四页，共80页。Forward/reflectivepowerBasepressureLeakratePartialpressure(gasflowandpumpspeed)MFCcalibrationWafertransferreliabilityWafertransfercycletimePumpmaintenance* TheusefulparameterdataistakenfromanequipmentthathasbeenproveditsperformancesareinspecificationPreventiveMaintenance第五十五页，共80页。EtchRateUniformitySelectivity第五十六页，共80页。TypeofEndpointdetectionTypeof endpointdetection EquipmentLaser Dryteck,AME8110Emissionspectroscopy MostofdryetherInfra-red VacuumetcherBrightlightreflection Sprayaluminumwetetch第五十七页，共80页。EmissionspectroscopyEndpointdetectionInaplasma,excitedatomsandmoleculesemitlightspectrumwhentheirelectronschangeenergystates.Thestrengthoftheemittedlightspectrumindicatetheprogressionandcharacterizationofthechemicalandatomicreaction.EmissionspectroscopystudythespecificlightspectrumanddetectiontheendofaspecialreactionLam590Endpointtrace第五十八页，共80页。TypicalwavelengthsinEPapplicationOxide CO: 482.5nmor520nm SiF: 440nmPoly SiCl2 405nm F 704nmNitride SiN 405nmAluminum AlCl 261.4nm,527nm Al 396nmResist CO 297.7nm,483.5nm520nmSilicon SiCl2 405nm第五十九页，共80页。Loadingeffect

Theloadingeffectisthephenomenonthatetchingunevenlocally.Thisphenomenonisnewandspecialtotheplasmaetchprocesses.Theetchratecanbebeststatedbythisequation: Plasmaetchrate = 1____ exposedsurfaceareaLoadingeffectismoreseveretobehappened * onthechemicalbehaveetchingplasmaprocess. * ontheetchprocessthatreliesonsidewallpassivation. *Waferwithunevenresistpatterndensity. *Waferwithvarioussizeofopening第六十页，共80页。PolyResidue1. Causebyunderetch2. Impurityinthefilm---POCL3contaminationinpoly3. Contaminationinunderlayerfilm4. PolymerleftoverPolyfilmetchedtoendpointinLam490第六十一页，共80页。DamageSomeoftheproblemsassociatedwithanisotropicRIEarelistedasfollow:MetallicContamination-Deepleveltraps;Degradedlifetimes;Highcontactresistance;LeakagecurrentPolymerFormation-HighcontactresistanceUVRadiation-TrapgenerationElectroStaticDischarge(ESD)-GateoxidebreakdownPhysicalDamage-DuetoenergeticionbombardmentTheetchingprocessisdirectional;therefore,foreignmaterialonthesurfacecanalsoactasamask,changingthedesiredetchedpattern.Heavymetals(forexample,knockedoffchamberwallsortheelectrodebyionbombardment)maycontaminatethewafers.Radiationdamagecanoccurinthesilicondioxidebythebuildupoftrappedchargeintheoxidelayer第六十二页，共80页。3.6Ionmilling(离子铣) Ionbeammillingusestheenergyimpartedtoabeamofions.Theionbeamusuallyconsistsofanionizedinertgassuchasargontoperformetching.Theionswithenergiesinthe300-1500eVrangestrikethebondsthatholdthemtoadjacentatoms.Thisprocessdependsonimpactandenergytransfer,notonthechargeoftheincomingion.Thechargeoneachionintheincidentbeammakestheformationofacollimated,singleenergybeampossible.TheschematicofatypicalionmillingsystemisshowninFigure6.第六十三页，共80页。3.7BCDplasmaetchingequipmentand applicationLam490 Diode Poly,NitrideLam590 Diode OxideAME8330 RIE Metal,MetalalloyAME8310 RIE OxideTegal1611 Triode Poly,NitrideTegal1612 Triode Metal,MetalalloyTegal903 Diode Oxide(4”)GasonicA100 Microwave Resist,DescumTegal915 Diode Resist,DescumIPC Capacitive Resist,Descum第六十四页，共80页。BCDPolyetchLam490Parallelplateplasmaetcher13.56MHzLoad-lockUserecipemoduleDualendpointchannel(405nm)BelttransferAnodizedaluminumelectrodeCassettetocassetteChlorinechemistryUpgradeHBr---Improveoxide selectivityEtchrate3700-4100(undopepoly)Uniformity<5%Selectivitytooxide40:1SelectivitytoPR2:1第六十五页，共80页。Lam490PolyetchloadingeffectinCl2chemistryprocess---improvebyaddingHBr490Cl2process1%resistpattern50%resistpattern1611HBrprocess第六十六页，共80页。BCDNitrideetchLam490Parallelplateplasmaetcher13.56MHzLoad-lockUserecipemoduleDualendpointchannel(405)BelttransferAnodizedaluminumelectrodeCassettetocassetteSF6andSF6/O2mixedchemistryUpgradeHBr---Improveoxide selectivityEtchrate1600A(LPCVD)Uniformity<5%Selectivitytooxide3:1SelectivitytoPR>2:1第六十七页，共80页。BCDOxideetchLam590Parallelplateplasmaetcher13.56MHzLoad-lockUserecipemoduleDualendpointchannel(520)BelttransferGraphiteupperelectrodeCassettetocassetteCHF3/CF4mixedchemistryEtchrate3700-4100Uniformity<5%Selectivitytopoly3:1SelectivitytoPR3:1第六十八页，共80页。590oxideetchissuesConsumptionofGraphitecausesloweretchrateandreducingetchuniformityInconsistentcontactresistanceMetalstepcoveragedifficultcausebyhigheraspectratioHighpowerdensityplasmahashigherarcingpotentialPolymerformsinthechamber onthechuckneartheedgeofthewafer,endpointviewspot.第六十九页，共80页。AluminumalloyetchAME8330RIEetcher13.56MHz1800Wat<50mtorrWallmountingLoad-lockCassettetocassetteUnlimitrecipescapacity4endpointchannel(AlCl396nm)HexagonelectrodeBCl3/Cl2chemistryUpgradeHBr---ImprovePR selectivityEtchrate400(undopepoly)Uniformity<5%Selectivitytooxide4:1SelectivitytoPR1:1第七十页，共80页。AME8330etchissue11. EtchselectivitytoresistIsverypoorinAME8330duestrongionbombardmentReducepowergascombination(AddingHBr)Hardmask(nitride,SOG…)DeepUVtreatmentbeforeetch2. Etchuniformity Processadjustment,putindummyslotFusion150第七十一页，共80页。AME8330etchissue2ResidueReducebulkEtchselectivityReduceBulketchrateIncomealuminumfilmQualityExtentoveretch第七十二页，共80页。AME8330etchissue3

Aluminumalloyfilmsur