【半导体照明课件】8-第8章-AlGaInP-发光二极管

2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0第8章AlGaInP发光二极管AlGaInP2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Introductionto

MOCVD/MOVPE/OMVPE2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVD/MOVPE/OMVPEMOCVD: MetalOrganicChemicalVapor DepositionMOVPE: MetalOrganicVaporPhaseEpitaxyOMVPE: OrganoMetallicVaporPhaseEpitaxyOftenallthreeexpressionsareusedinterchangeably2021/2/13SaturdayTSSELpart-1MOCVD实例三、LED外延片的制作二、LED外延片的制作MOCVD实例三、LED外延片的制作二、LED外延片的制作系统简介

本系统为英国ThomasSwan公司制造，具有世界先进水平的商用金属有机源气相外延(MOCVD)材料生长系统，可用于制备GaAs和InP、GaN为代表的第二、三代半导体材料。在高亮度的蓝光发光二极管(LED)、激光器(LD)、日盲紫外光电探测器、高效率太阳能电池、高频大功率电子器件领域中具有广泛的应用。

三、LED外延片的制作二、LED外延片的制作系统简介三、LED外延片的制作二、LED外延片的制作MOCVD已经成为工业界主要使用的镀膜技术。使用MOCVD这种镀膜技术制作LED的外延片，即在衬底上镀多层膜。外延片是LED生产的上游产业，在光电产业中扮演重要的角色。有些专家经常用一个国家或地区拥有MOCVD外延炉的数量来衡量这个国家或地区的光电行业的发展规模。三、LED外延片的制作二、LED外延片的制作MOCVD已经成为工业界主要使用的镀膜技术。三、LED外延片2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TheWorldofSemiconductorsIII IV VCompoundsemiconductors III-Vs:GaAs,AlGaAs,GalnP, AlGaInP,GaN,InGaN… Speciality:SiCTraditionalsemiconductors Si:DRAMs,processorsAdvantagesofcompoundsemiconductors:•faster,higherfrequencies•visiblelight,infrared•highefficientphotovoltaicsheatandhighpowerresistantEnablingtechnologyfor:2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0HowMOCVDWorks2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ComponentsofaLow

Pressure(LP)MOCVDSystemgascontrolunitreactorwithheatedsusceptorvacuumsystemcontrolunitscrubbingsystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SimplifiedPresentation

ofaCrystalGrowthProcess2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrincipleofthe

MOVPEProcessAgasmixturecontainingtheprecursorsneededforgrowth,andifnecessaryfordoping,ispassedoveraheatedsubstrate.Theprecursormoleculespyrolyze(使裂解)leavingtheatoms,e.g.,GaandAsatomsonthesubstratesurface.Theatomsbondtothesubstratesurfaceandanewcrystallinelayerisgrown,inthiscaseGaAs.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Precursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Sample:PrecursorMoleculesAsH3DMZn-(CH3)2ZnTMGa-(CH3)3GaHCAsZnGa8.11源材料（Precursors）2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVDPrecursorsDesirablepropertiesofprecursors:LowtoxicityLiquidatroomtemperatureSuitablevaporpressureatroomtemperatureLowcarboncontaminationingrownlayer(avoidCH3radicals),however,forsomeapplicationsCdopingisdesired(thoughrarelyachievedbyautodopingtechniques.NoparasiticreactionswithothersourcesGoodlongtermstability(shouldnotdecomposeinbubbler)PyrolysistemperatureshouldmatchtheidealgrowthtemperatureInexpensiveforindustrialmassproduction2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors-Bubblers2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupVPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DopantPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicTransportandGrowthMechanisms2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0PrincipleofLP-MOVPEH,NP=100Torr22TMGa,AsH3TMGa,NH3TMIn,PH3gasblendingreactorhighpurity,precisemixingsafetyGaAs,InPsubstrate,T~400-1000°CD~100rpmproductionorientedlowcostofownershipGa(CH)+AsHGaAs+3CH3334TMAl,TMGa,,sapphireGa(CH)+NHGaN+3CH3334scrubbingsystemH2filterunitvacuumpumpthrottlevalvecrystalquality,thicknessuniformity,reproducibility2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOVPEGrowthMechanisms

(simplified)boundarylayersurfacediffusionandreactionincorporationandgrowthCH4=CH3+HH+H=H2wafersurfacemasstransporttothesurfacebydiffusionatomicstepHHHAsCH3GaCH3CH3precursordecomposition-radicaladsorptionCH3CH3-radicalgasphasehorizontalgasflowHHHAsGaCH3CH3CH3H2H2H2H22021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

Example:GaAsGrowthEfficiency

102103104GrowthEfficiency[µm/mole]1000/T[K-1]0.61.01.4BAC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LayerGrowthInGaNlayersinvestigatedbyscanningelectronmicroscopy(SEM),cathodo-luminescence(CL)imaging,highresolutionX-rayanalysis(EDX)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicDeviceproduction

–thestepssurroundingMOCVD2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SiliconWaferProductionPatternPreparationCrystalPullingSiliconprocessismorecomplex,upto100processsteps,plusmeasurementsateachstage,~50daycycle2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0OptoElectronics2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LEDs15000LEDsona2“-WaferChipsize:0.35x0.35mmTheoptoelectronicpropertiesofthedifferentcompoundsemiconductorsdeterminetheilluminatedcolorofanLED:redtoyellow/green AlGaAs,AlGaInPgreen/blue (In)GaNWhitelightisgeneratedbycombiningblueLEDswithfluorescentdyes.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GaNLEDTestStructures

grownonanAIXTRONSystemWithcourtesyofNationalCentralUniversity,TaiwanWithcourtesyofSAIT,KoreaGaNBlueLaser

devicegrownonaTHOMASSWANSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0WhatisimportantforsuccessfulEpitaxy?

ThermalmanagementinthereactoreffectsTransportcoefficientReactionratesIncorporationofdopantsCompositionofmulticomponentmaterialsystemsCompositionofthegasphaseFor(AlxGa1-x)0.52In0.48PLEDstheAl/Ga-ratiodeterminesthecoloroftheLED.ThereforecalibratedandstableMFCsandPCsareneededforreproducibleLEDcolors.BubblertemperaturedeterminesvaporpressureofMO2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ProductsmadebyMOVPE

2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

GaAs

AlGaAs

InGaP

InGaAs

InSb

•

MESFETs

•

HEMTs

•

PHEMTs

•

HBTs

•

Lasers•

MobileTelephony

•

GlobalPositioningSystems(GPS)

•

SatelliteSystems

•

DirectBroadcastSatellite(DBS)

•

Paging

•

WirelessLAN/WirelessCable

•

AutomotiveRadar

InP

InGaAs

InAlAs

InGaAlAs

InGaAsP

InGaAsN

•

DH,QW,DFBLasers

•

LEDs

•

VCSELs

•

Detectors

•

HBTs•

OpticalFiberCommunications

•

Sensors

•

Infra-RedCameras

•

WirelessCommunicationsGaAs

AlGaAs

InGaAs

InGaAlAs

InGaAsP

•

DH,QW,

•

VCSELs

•

HEMTs

•

FETs

•

SolarCells

•

Detectors•

FiberAmplifiers,GigabitEthernet

•

MedicalSystems

•

SolidStateLaserPumps

•

CD,Minidisc

•

GPS

•

Automotive

•

SatelliteSystems

InGaP

InAlP

InAlP

GaN

InGaN

InGaAlN

•

VisibleLasers

•

UHBLEDs

•

VisibleVCSELs

•

HBTs

•

DJSolarCells

•

Displays

•

DVD/CD

•

Illumination

•

Pointers/BarCode

•

WirelessCommunications

•

SatelliteSystems

•

MedicalApplications

MaterialSystems Devices Applications©IQEPLC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0RequirementsofCompoundSemiconductorIndustry Uniformityoflayerthicknessandcompositionof±1% onthewafer TemperatureuniformityonwaferT=±1°Cwithina widetemperaturerange Wafertowaferandruntorunreproducibility Lowcostofownership,highwafercapacity,highup- timeratio2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

WhyMOVPE?

Veryhighqualityofgrownlayers(highgrowthrateanddopinguniformity/reproducibility)Highthroughputandnoultrahighvacuumneeded(comparedtoMBE),thereforeeconomicallyadvantageous,highsystemup-timeDifferentmaterialscanbegrowninthesamesystem,thereforehighestflexibilityGrowthofsharpinterfacespossible-thereforeverysuitableforheterostructures,e.g.,multiquantumwells(MQW)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SummaryDiscussedtopics:PropertiesofcommonlyusedprecursorsFundamentalMOVPEgrowthprinciplesDevicesmadebyMOVPE©Dr.WalterReichert AIXTRONA.G.&TrevorWebb THOMASSWANSCIENTIFICEQUIPMENTLTD.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TSSEL3X2”CCSInPMOCVDSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0源输送子系统(GasDeliverySystem)反应室与加热子系统（Reactor&HeaterSystem）低压子系统(LowPressureExhaustSystem)尾气处理子系统(DryScrubberSystem)安全与控制单元(Safety&ControlUnit)3X2”CCSInPMOCVD系统构成KeyLaboratoryofOpticalCommunication&LightwaveTechnologies,MinistryofEducation2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

AsH3TMGa-(CH3)3GaHCAsGaPrecursorsMolecularsV族源：AsH3PH3NH3III族源：TMAlTEAlTMGaTEGaTMInTEIn掺杂源：DMZnDEZnCp2MgCBr4SiH4Si2H6H2S2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0分子式分子量熔点饱和蒸汽压公式冷阱温度饱和蒸汽压(CH3)3GaTMGa114.82-15.8ºC0ºC68.480Torr(CH3)3AlTMAl72.0915.4ºC10ºC4.832Torr(CH3)3InTMIn159.9388.4ºC25ºC1.714Torr(C2H5)2ZnDEZn123.49-28.0ºC5ºC4.989Torr金属有机源(MOSource)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DoublePlenumShowerhead2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ClosedCoupledShowerheadNozzleOpticalPort2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ReactorGraphiteSusceptorSusceptorSupportLowerQuartzLiner2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GraphiteHeaterZoneAZoneBZoneCInP系统采用石墨加热器，GaN系统采用钨丝加热器2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ThomasSwanScrubberSystems

Episorb–AsH3&PH3 EpiCat–NH3

2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrinciplesEpiSorbII(2columns)Two-columndesignpermitssimultaneousadsorptioninonecolumnandoxidationintheother.AdsorptionontoCharcoalmediumOxidationofothercolumn5programmableOxidationsteps2021/2/13SaturdayTSSELpart-1恭祝马到成功恭祝2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0第8章AlGaInP发光二极管AlGaInP2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Introductionto

MOCVD/MOVPE/OMVPE2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVD/MOVPE/OMVPEMOCVD: MetalOrganicChemicalVapor DepositionMOVPE: MetalOrganicVaporPhaseEpitaxyOMVPE: OrganoMetallicVaporPhaseEpitaxyOftenallthreeexpressionsareusedinterchangeably2021/2/13SaturdayTSSELpart-1MOCVD实例三、LED外延片的制作二、LED外延片的制作MOCVD实例三、LED外延片的制作二、LED外延片的制作系统简介

本系统为英国ThomasSwan公司制造，具有世界先进水平的商用金属有机源气相外延(MOCVD)材料生长系统，可用于制备GaAs和InP、GaN为代表的第二、三代半导体材料。在高亮度的蓝光发光二极管(LED)、激光器(LD)、日盲紫外光电探测器、高效率太阳能电池、高频大功率电子器件领域中具有广泛的应用。

三、LED外延片的制作二、LED外延片的制作系统简介三、LED外延片的制作二、LED外延片的制作MOCVD已经成为工业界主要使用的镀膜技术。使用MOCVD这种镀膜技术制作LED的外延片，即在衬底上镀多层膜。外延片是LED生产的上游产业，在光电产业中扮演重要的角色。有些专家经常用一个国家或地区拥有MOCVD外延炉的数量来衡量这个国家或地区的光电行业的发展规模。三、LED外延片的制作二、LED外延片的制作MOCVD已经成为工业界主要使用的镀膜技术。三、LED外延片2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TheWorldofSemiconductorsIII IV VCompoundsemiconductors III-Vs:GaAs,AlGaAs,GalnP, AlGaInP,GaN,InGaN… Speciality:SiCTraditionalsemiconductors Si:DRAMs,processorsAdvantagesofcompoundsemiconductors:•faster,higherfrequencies•visiblelight,infrared•highefficientphotovoltaicsheatandhighpowerresistantEnablingtechnologyfor:2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0HowMOCVDWorks2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ComponentsofaLow

Pressure(LP)MOCVDSystemgascontrolunitreactorwithheatedsusceptorvacuumsystemcontrolunitscrubbingsystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SimplifiedPresentation

ofaCrystalGrowthProcess2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrincipleofthe

MOVPEProcessAgasmixturecontainingtheprecursorsneededforgrowth,andifnecessaryfordoping,ispassedoveraheatedsubstrate.Theprecursormoleculespyrolyze(使裂解)leavingtheatoms,e.g.,GaandAsatomsonthesubstratesurface.Theatomsbondtothesubstratesurfaceandanewcrystallinelayerisgrown,inthiscaseGaAs.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Precursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Sample:PrecursorMoleculesAsH3DMZn-(CH3)2ZnTMGa-(CH3)3GaHCAsZnGa8.11源材料（Precursors）2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVDPrecursorsDesirablepropertiesofprecursors:LowtoxicityLiquidatroomtemperatureSuitablevaporpressureatroomtemperatureLowcarboncontaminationingrownlayer(avoidCH3radicals),however,forsomeapplicationsCdopingisdesired(thoughrarelyachievedbyautodopingtechniques.NoparasiticreactionswithothersourcesGoodlongtermstability(shouldnotdecomposeinbubbler)PyrolysistemperatureshouldmatchtheidealgrowthtemperatureInexpensiveforindustrialmassproduction2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors-Bubblers2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupVPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DopantPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicTransportandGrowthMechanisms2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0PrincipleofLP-MOVPEH,NP=100Torr22TMGa,AsH3TMGa,NH3TMIn,PH3gasblendingreactorhighpurity,precisemixingsafetyGaAs,InPsubstrate,T~400-1000°CD~100rpmproductionorientedlowcostofownershipGa(CH)+AsHGaAs+3CH3334TMAl,TMGa,,sapphireGa(CH)+NHGaN+3CH3334scrubbingsystemH2filterunitvacuumpumpthrottlevalvecrystalquality,thicknessuniformity,reproducibility2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOVPEGrowthMechanisms

(simplified)boundarylayersurfacediffusionandreactionincorporationandgrowthCH4=CH3+HH+H=H2wafersurfacemasstransporttothesurfacebydiffusionatomicstepHHHAsCH3GaCH3CH3precursordecomposition-radicaladsorptionCH3CH3-radicalgasphasehorizontalgasflowHHHAsGaCH3CH3CH3H2H2H2H22021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

Example:GaAsGrowthEfficiency

102103104GrowthEfficiency[µm/mole]1000/T[K-1]0.61.01.4BAC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LayerGrowthInGaNlayersinvestigatedbyscanningelectronmicroscopy(SEM),cathodo-luminescence(CL)imaging,highresolutionX-rayanalysis(EDX)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicDeviceproduction

–thestepssurroundingMOCVD2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SiliconWaferProductionPatternPreparationCrystalPullingSiliconprocessismorecomplex,upto100processsteps,plusmeasurementsateachstage,~50daycycle2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0OptoElectronics2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LEDs15000LEDsona2“-WaferChipsize:0.35x0.35mmTheoptoelectronicpropertiesofthedifferentcompoundsemiconductorsdeterminetheilluminatedcolorofanLED:redtoyellow/green AlGaAs,AlGaInPgreen/blue (In)GaNWhitelightisgeneratedbycombiningblueLEDswithfluorescentdyes.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GaNLEDTestStructures

grownonanAIXTRONSystemWithcourtesyofNationalCentralUniversity,TaiwanWithcourtesyofSAIT,KoreaGaNBlueLaser

devicegrownonaTHOMASSWANSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0WhatisimportantforsuccessfulEpitaxy?

ThermalmanagementinthereactoreffectsTransportcoefficientReactionratesIncorporationofdopantsCompositionofmulticomponentmaterialsystemsCompositionofthegasphaseFor(AlxGa1-x)0.52In0.48PLEDstheAl/Ga-ratiodeterminesthecoloroftheLED.ThereforecalibratedandstableMFCsandPCsareneededforreproducibleLEDcolors.BubblertemperaturedeterminesvaporpressureofMO2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ProductsmadebyMOVPE

2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

GaAs

AlGaAs

InGaP

InGaAs

InSb

•

MESFETs

•

HEMTs

•

PHEMTs

•

HBTs

•

Lasers•

MobileTelephony

•

GlobalPositioningSystems(GPS)

•

SatelliteSystems

•

DirectBroadcastSatellite(DBS)

•

Paging

•

WirelessLAN/WirelessCable

•

AutomotiveRadar

InP

InGaAs

InAlAs

InGaAlAs

InGaAsP

InGaAsN

•

DH,QW,DFBLasers

•

LEDs

•

VCSELs

•

Detectors

•

HBTs•

OpticalFiberCommunications

•

Sensors

•

Infra-RedCameras

•

WirelessCommunicationsGaAs

AlGaAs

InGaAs

InGaAlAs

InGaAsP

•

DH,QW,

•

VCSELs

•

HEMTs

•

FETs

•

SolarCells

•

Detectors•

FiberAmplifiers,GigabitEthernet

•

MedicalSystems

•

SolidStateLaserPumps

•

CD,Minidisc

•

GPS

•

Automotive

•

SatelliteSystems

InGaP

InAlP

InAlP

GaN

InGaN

InGaAlN

•

VisibleLasers

•

UHBLEDs

•

VisibleVCSELs

•

HBTs

•

DJSolarCells

•

Displays

•

DVD/CD

•

Illumination

•

Pointers/BarCode

•

WirelessCommunications

•

SatelliteSystems

•

MedicalApplications

MaterialSystems Devices Applications©IQEPLC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0RequirementsofCompoundSemiconductorIndustry Uniformityoflayerthicknessandcompositionof±1% onthewafer TemperatureuniformityonwaferT=±1°Cwithina widetemperaturerange Wafertowaferandruntorunreproducibility Lowcostofownership,highwafercapacity,highup- timeratio2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0

WhyMOVPE?

Veryhighqualityofgrownlayers(highgrowthrateanddopinguniformity/reproducibility)Highthroughputandnoultrahighvacuumneeded(comparedtoMBE),thereforeeconomicallyadvantageous,highsystemup-timeDifferentmaterialscanbegrowninthesamesystem,thereforehighestflexibilityGrowthofsharpinterfacespossible-thereforeverysuitableforheterostructures,e.g.,multiquantumwells(MQW)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SummaryDiscussedtopics:Propertiesofcommonly