WAT测量项目以及测试方法课件

WAT测量项目以及测试方法TD/DTD/DD:SutterDai2008/03/07WAT测量项目以及测试方法TD/DTD/DD:SutteWATIntroductionWAT是什么WAT系统介绍3.WAT测试项目及方法WATIntroductionWAT是什么WaferAcceptanceTest（晶片允收测试）半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。WAT是什么?

WaferAcceptanceTest（晶片允收测试）WWAT系统介绍ManualProberAgilent4284ACVMeterAgilent4156AIVMeterCascadeManualProberWAT系统介绍ManualProberAgilent42WAT系统介绍Agilent4070systemTELP8XLAgilent4070WAT系统介绍Agilent4070systemTELWAT系统介绍HP4070ServerAgilent81110APulseGeneratorAgilent4284ACVMeterAgilentE4411BSpectrumAnalyzerAgilent4070内部结构Agilent3458ADigitMultimeterWAT系统介绍HP4070ServerAgilent8WaferAuto-ProberRelayMetricServerEDAServerTestKeyProbecardSMUPINNoDataDataProductinformationTestProgramControlcommandDCtesterCVMeter4070ServerWAT流程图WaferAuto-ProberRelayMetricSeWAT测试项目MOSdeviceFieldDeviceJunctionGateOxideResistorBipolarDeviceLayoutRuleCheck常见的几种器件结构WAT测试项目MOSdevice常见的几种器件结构

MOSDeviceMOSDeviceWAT测量项目以及测试方法课件ItemnameMethodofmeasurementIdsVd=Vg=Vdd,Vs=Vb=0,measureId,Ids=Id/WidthVt0Vd=0.1V,Vs=Vb=0,sweepVgfrom0Vto3V,usemaximumslopemethod,Vt0=Xintercept–1/2*VdVt1Vd=0.1V,Vs=Vb=0,sweepVgfrom0Vto2V,measureId,Vt1=Vg@Id=0.1uA*Width/LengthIsubVd=Vdd,Vs=Vg=0,sweepVgfrom0toVddtogetmaximumIsubcurrentIoffVd=1.1Vdd,Vg=Vs=Vb=0,measureId,Ioff=Id/WidthBvdVg=Vs=Vb=0,sweepVdfrom0VtoVdstop(<3Vdd),measureId,Bvd=Vd@Id=0.1uA/um以NMOS为例：ItemnameMethodofmeasurement2.FieldDevice2.FieldDeviceItemnameMethodofmeasurementVtVd=1.1Vdd,sweepVgfrom0VtoVgstop(<3Vdd),measureId,Vt=Vg@Id=10nA/umIleakVg=Vd=1.1Vdd,measureId,Ileak=Id/WidthVptVg=1.1Vdd,sweepVdfrom0VtoVdstop(<3Vdd),measureId,Vpt=Vd@Id=10nA/umWATItemName(以PolyNfield为例):VtNfpS(fieldVt)IleakNfpSVptNfpS(punchthroughVt)ItemnameMethodofmeasurement3.

Junction3.JunctionWATItemName(以N+/PWjunction为例):CNjIleakNjBvNjItemnameMethodofmeasurementCjVg=0V,Vb=GND,applya0.03VACsignaltomeasureCvalue,Cj=C/AreaIleakVg=1.1Vdd,measureIg,Ileak=Ig/AreaBvVb=0,sweepVgfrom0VtoVgstop(<3Vdd),measureIg,Bv=Vg@Ig=100pA/um2WATItemName(以N+/PWjunctio4.GateOxide4.GateOxideWATItemName(以PWgateoxide为例):CgpwToxpwBvCgpwItemnameMethodofmeasurementCoxVg=Vdd,Vb=GND,applya0.03VACsignaltomeasureCvalue,Cox=C/AreaToxVg=GND,Vb=Vdd,applya0.03VACsignaltomeasureCoxvalue,Tox=(εo*εox*Area)/CoxBvVb=0,sweepVgfrom0VtoVgstop(<3Vdd),measureIg,Bv=Vg@Ig=100pA/um2NOTE:Iftherehasadummycapacitor,Cdummyshouldbesubtracted.(Cox=Cox-Cdummy)WATItemName(以PWgateoxide为5.Resistor5.ResistorItemnameMethodofmeasurementRsVh=1V,measureIh,Rs=(Vh/Ih)/SqrSheetresistance(RsN+/P+/NW/Poly/Metal)ItemnameMethodofmeasurementContactResistance(RcN+/P+/Via)ItemnameMethodofmeasurementRcVh=1V,Vl=GND,measureIh,Rs=[(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)]/NconNote:Rcneedtosubtractactive&Metalresistor,RsMetalcanbeignoredduetometalresistorisverysmall.ContactResistance(RcN+/P+/Vi6.BipolarDevice6.BipolarDeviceWATItemName(以NPN为例):HfeNpnBvNpnItemnameMethodofmeasurementHfeIb=1uA,Vce=Vdd,Hfe=Ic/IbBvBasefloating,SweepVcefrom0VtoVcestop(<3Vdd),measureIc,Bv=Vce@Ic=1uAWATItemName(以NPN为例):Itemnam7.LayoutRuleCheck7.LayoutRuleCheckPADPADNW/N+Poly/N+active/MetalbridgeWATItemName(以NWbridge为例):IbriNWItemnameMethodofmeasurementIbriVh=1.1Vdd,measureIh,Ibri=IhPADPADNW/N+Poly/N+active/MetThanks!Thanks!WAT测量项目以及测试方法TD/DTD/DD:SutterDai2008/03/07WAT测量项目以及测试方法TD/DTD/DD:SutteWATIntroductionWAT是什么WAT系统介绍3.WAT测试项目及方法WATIntroductionWAT是什么WaferAcceptanceTest（晶片允收测试）半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。WAT是什么?

WaferAcceptanceTest（晶片允收测试）WWAT系统介绍ManualProberAgilent4284ACVMeterAgilent4156AIVMeterCascadeManualProberWAT系统介绍ManualProberAgilent42WAT系统介绍Agilent4070systemTELP8XLAgilent4070WAT系统介绍Agilent4070systemTELWAT系统介绍HP4070ServerAgilent81110APulseGeneratorAgilent4284ACVMeterAgilentE4411BSpectrumAnalyzerAgilent4070内部结构Agilent3458ADigitMultimeterWAT系统介绍HP4070ServerAgilent8WaferAuto-ProberRelayMetricServerEDAServerTestKeyProbecardSMUPINNoDataDataProductinformationTestProgramControlcommandDCtesterCVMeter4070ServerWAT流程图WaferAuto-ProberRelayMetricSeWAT测试项目MOSdeviceFieldDeviceJunctionGateOxideResistorBipolarDeviceLayoutRuleCheck常见的几种器件结构WAT测试项目MOSdevice常见的几种器件结构

MOSDeviceMOSDeviceWAT测量项目以及测试方法课件ItemnameMethodofmeasurementIdsVd=Vg=Vdd,Vs=Vb=0,measureId,Ids=Id/WidthVt0Vd=0.1V,Vs=Vb=0,sweepVgfrom0Vto3V,usemaximumslopemethod,Vt0=Xintercept–1/2*VdVt1Vd=0.1V,Vs=Vb=0,sweepVgfrom0Vto2V,measureId,Vt1=Vg@Id=0.1uA*Width/LengthIsubVd=Vdd,Vs=Vg=0,sweepVgfrom0toVddtogetmaximumIsubcurrentIoffVd=1.1Vdd,Vg=Vs=Vb=0,measureId,Ioff=Id/WidthBvdVg=Vs=Vb=0,sweepVdfrom0VtoVdstop(<3Vdd),measureId,Bvd=Vd@Id=0.1uA/um以NMOS为例：ItemnameMethodofmeasurement2.FieldDevice2.FieldDeviceItemnameMethodofmeasurementVtVd=1.1Vdd,sweepVgfrom0VtoVgstop(<3Vdd),measureId,Vt=Vg@Id=10nA/umIleakVg=Vd=1.1Vdd,measureId,Ileak=Id/WidthVptVg=1.1Vdd,sweepVdfrom0VtoVdstop(<3Vdd),measureId,Vpt=Vd@Id=10nA/umWATItemName(以PolyNfield为例):VtNfpS(fieldVt)IleakNfpSVptNfpS(punchthroughVt)ItemnameMethodofmeasurement3.

Junction3.JunctionWATItemName(以N+/PWjunction为例):CNjIleakNjBvNjItemnameMethodofmeasurementCjVg=0V,Vb=GND,applya0.03VACsignaltomeasureCvalue,Cj=C/AreaIleakVg=1.1Vdd,measureIg,Ileak=Ig/AreaBvVb=0,sweepVgfrom0VtoVgstop(<3Vdd),measureIg,Bv=Vg@Ig=100pA/um2WATItemName(以N+/PWjunctio4.GateOxide4.GateOxideWATItemName(以PWgateoxide为例):CgpwToxpwBvCgpwItemnameMethodofmeasurementCoxVg=Vdd,Vb=GND,applya0.03VACsignaltomeasureCvalue,Cox=C/AreaToxVg=GND,Vb=Vdd,applya0.03VACsignaltomeasureCoxvalue,Tox=(εo*εox*Area)/CoxBvVb=0,sweepVgfrom0VtoVgstop(<3Vdd),measureIg,Bv=Vg@Ig=100pA/um2NOTE:Iftherehasadummycapacitor,Cdummyshouldbesubtracted.(Cox=Cox-Cdummy)WATItemName(以PWgateoxide为5.Resistor5.ResistorItemnameMethodofmeasurementRsVh=1V,measureIh,Rs=(Vh/Ih)/SqrSheetresistance(RsN+/P+/NW/Poly/Metal)ItemnameMethodofmeasurementContactResistance(RcN+/