CMOS Front End Process CMOS前端工艺英文版课件：Intro%20and%20syllabus1

EE5515 CMOSFront-EndProcessesand

SimulationA/PChoByungJin(elebjcho@.sg)Room:E18-10,Tel:6874-6470A/PGanesh

Samudra(eleshanr@.sg)Room:E5-03-13,Tel:6874-2293Coursewebsite:.sg/course/elebjcho/ee5515/ee5515.htm1CourseSyllabusModularCredit: 4MCs, Hours/Week:

3L,0.5PPre-Requisites: EE4411orequivalent, Co-Requisites: NoneExclusions: EE55011.IntroductiontoCMOSTechnology (3hours,byA/Prof.BJCho)ULSITechnologytrend,CMOSprocesssequence.2.Oxidation (3hours,byA/Prof.BJCho)

GrowthMechanism(D-GModel),Oxidationrate,Oxideproperties(density,stress,segregation,OSF,charges),Oxidationtechnique(recipe,equipment),OxidationPre-cleaning3.

GateModuleTechnology (4.5hours,byA/Prof.BJCho)ThinGateoxide,Tunneling,Reliability,Alternativedielectrics–nitridedoxide,highkdielectrics,GateelectrodeEngineering,Polycidegate4.

Diffusion(3hours,byA/Prof.BJCho)Diffusionprocessesandprofiles(predeposition,drive-in,B-Manalysis),Atomicdiffusionmodel,Diffusionofmajordopants,Secondaryeffects(E-fieldeffect,bandgapnarrowing,Emitterpush,OED,lateraldiffusion),Measurementtechnique(Rsandprofilemeasurement)

25.IonImplantation (3hours,byA/Prof.BJCho)Simpletheoryofionimplantation(ionstopping,projectionrange,channeling),damageand

annealing,Equipmentrelatedissues(charging,uniformity,andsoon)6. ShallowJunctionTechnology (4.5hours,byA/Prof.BJCho)

Transient-EnhancedDiffusion,pre-amorphizationtechnique,RapidThermalProcessing,Silicidation7. Lithography (4hours,A/Prof.G.Samudra)

OpticalandelectronbeamLithography;Simulationandmodelingofsurfacetopography8. Isolation (2Hours,A/Prof.G.Samudra)

LOCOSIsolation,ModifiedLOCOS,ShallowTrenchIsolation9. CMOSProcessIntegration (4hours,A/Prof.G.Samudra)

JustificationofCMOSprocesssequence.Linkagebetweendeviceperformanceandprocesssteps.CMOSdevicescalingrules.10. ProcessSimulation (5hours,A/Prof.G.Samudra)

1Dand2Dsimulationmodelsofoxidationprocess,1Dand2Dsimulationmodelsforimpurityanddefectdiffusion,AnalyticandMonte-CarlosimulationtechniquesforIonimplantation,Integratedprocesssimulationwithwell-knownsimulationtools,Hand-onsessions.Aminisimulationprojectthatconstitutes10%ofthefinalgrade.

3

References

1.

"VLSITechnology",2ndEd.S.M.Sze,McGrawHill,1988

2.

"ULSITechnology"C.Y.ChangandS.M.Sze,McGrawHill,1996

3."SiliconprocessingfortheVLSIera"

S.WolfandTauber,LatticePress,Vol.1(2ndEd.)2000andVol.2,1990.

4."SiliconprocessingfortheVLSIera"

S.Wolf,LatticePress,Vol.4,2002.

5."Thescienceandengineeringofmicroelectronicfabrication"

S.A.Cambell,OxfordUniversityPress,1996.

6.“SiliconVLSITechnology”

J.D.Plummer,M.D.DealandP.B.Griffin,,PrenticeHall,20004LecturingSchedule9thAug(NationalDay)16thAug(Cho)20thAug(Cho)06thSep(Cho)13thSep(Cho)Midtermbreak(19~24thSep)But,weneedtwomakeupclassesduringtheweek.

27thSep(Samudra)04thOct(Samudra)11thOct(Cho)18thOct(Samudra)25thOct(Samudra)01thNov(Deepavali)08thNov(Samudra)5GoalsofTechnologyScalingSellmorefunctions(transistors)perchipforthesamecostManufacturesameproductscheaper

Stillwanthigherspeedandlowerpower6Front-EndTechnology

gatedielectricsgateelectrodesisolationtechnologyUltrashallowjunctionformationLithographyProcessintegrationissuesModeling,simulation,reliabilityFocusAreas7CrossSectionoftypicalmodernCMOSIC8GateOxideScalingTrendInternationalTechnologyRoadmapforSemiconductors91.Initialcleaning2.Nitride/oxidestackformation3.Wellmask4.Nitrideetching5.P+implantation(forn-well)6.N-welldrive-in&oxidation7.Nitridestrip8.B+implantation(forp-well)9.P-welldrivein10.Oxidestrip11.Nitride/oxidestackformation(foractiveareadefine)12.Isolationlayermask13.Nitrideetching14.Maskforchannelstopimp.15.Boronimplantation(forn-channelstop)P+PRSi3N4p-type(100)B+B+PRSi3N4p-welln-wellTwinwellLOCOSbasedCMOSprocesssequence1016.Fieldoxidation17.Nitridestrip/Sacrificialoxidation18.n-channelVtmask19.n-channelVtimplantation20.p-channelVtmask(notdrawn)21.p-channelVtimplantation(notdrawn)22.Pre-cleaningforgate23.Gateoxidation24.Polysilicondeposition25.Polysilicondoping26.Maskforgatedefine27.Polysiliconetching28.n-channelS/DMask29.n-S/Dimplantation(f)p-welln-wellp+p+FoxP+orAs+p-welln-wellp+p+Foxn-n-PR(e)p-welln-wellp+p+PRFox(d)B+11B+p-welln-wellp+p+Foxn+PRn+p+p+30.Oxidedepositionforspacerformation31.Oxideetchingtoformoxidespacer32.n+S/Dmask(notdrawn)33.Arsenicimplantationforn+S/D.34.n+S/Dannealing35.p+S/Dmask36.p+S/Dimplantationp-welln-wellp+p+Foxn+n+p+p+37.Int