MOS工艺讲解-课件

1、MOS晶体管的动作 MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)MOSFET的基本结构1ppt课件MOS晶体管的动作 MOS晶体管实质上是一种使n+n+P型silicon substratesourcedraingateoxideoxidetop oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gatedoped siliconf

2、ield oxidegate oxideMOS晶体管的立体结构2ppt课件silicon substratesourcedrainga在硅衬底上制作MOS晶体管silicon substrate3ppt课件在硅衬底上制作MOS晶体管silicon substratesilicon substrateoxidefield oxide4ppt课件silicon substrateoxidefield oxsilicon substrateoxidephotoresist5ppt课件silicon substrateoxidephotoresShadow on photoresistphotores

3、istExposed area of photoresistChrome platedglass maskUltraviolet Lightsilicon substrateoxide6ppt课件Shadow on photoresistphotoresi非感光区域silicon substrate感光区域oxidephotoresist7ppt课件非感光区域silicon substrate感光区域oxidShadow on photoresistsilicon substrateoxidephotoresistphotoresist显影8ppt课件Shadow on photoresist

4、silicon ssilicon substrateoxideoxidesilicon substratephotoresist腐蚀9ppt课件silicon substrateoxideoxidesilsilicon substrateoxideoxidesilicon substratefield oxide去胶10ppt课件silicon substrateoxideoxidesilsilicon substrateoxideoxidegate oxidethin oxide layer11ppt课件silicon substrateoxideoxidegatsilicon substr

5、ateoxideoxidepolysilicongate oxide12ppt课件silicon substrateoxideoxidepolsilicon substrateoxideoxidegategateultra-thin gate oxidepolysilicongate13ppt课件silicon substrateoxideoxidegatsilicon substrateoxideoxidegategatephotoresistScanning direction of ion beamimplanted ions in active region of transistor

6、sImplanted ions in photoresist to be removed during resist strip. sourcedrainion beam14ppt课件silicon substrateoxideoxidegatsilicon substrateoxideoxidegategatesourcedraindoped silicon15ppt课件silicon substrateoxideoxidegat自对准工艺在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入16ppt课件自对准工艺在有源区上覆盖一层薄氧

7、化层16ppt课件silicon substratesourcedraingate17ppt课件silicon substratesourcedraingasilicon substrategatecontact holesdrainsource18ppt课件silicon substrategatecontact hsilicon substrategatecontact holesdrainsource19ppt课件silicon substrategatecontact h完整的简单MOS晶体管结构silicon substratesourcedraingateoxideoxidetop

8、 oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gatedoped siliconfield oxidegate oxide20ppt课件完整的简单MOS晶体管结构silicon substrateCMOSFETP型 si subn+gateoxiden+gateoxideoxidep+p+21ppt课件CMOSFETP型 si subn+gateoxiden+主要的CMOS工艺VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINV

9、DDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si22ppt课件主要的CMOS工艺VDDP阱工艺N阱工艺双阱工艺P-P+P+掩膜1： P阱光刻P-wellP-well N+ N+ P+ P+ N+ P+N-SiP23ppt课件掩膜1： P阱光刻P-wellP-well N+ N+具体步骤如下：1生长二氧化硅（湿法氧化）：Si(固体)+ 2H2O SiO2（固体）+2H224ppt课件具体步骤如下：Si(固体)+ 2H2O SiO2（固体）氧 化25ppt课件氧 化25ppt课件2P阱光刻：涂胶腌膜对准

10、曝光光源显影26ppt课件2P阱光刻：涂胶腌膜对准曝光光源显影26ppt课件27ppt课件27ppt课件硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3P阱掺杂：28ppt课件硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-29ppt课件29ppt课件离子源高压电源电流积分器离子束30ppt课件离子源高压电流离子束30ppt课件掩膜2： 光刻有源区有源区：nMOS、PMOS 晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well 淀积氮化硅 光刻有源区 场区氧化 去除有源区氮化硅及二氧化硅SiO2隔离岛31ppt课件掩膜2： 光刻有源区有

11、源区：nMOS、PMOSP+N+N+有源区depositednitride layer有源区光刻板N型p型MOS制作区域(漏-栅-源)32ppt课件有源区deposited有源区光刻板32ppt课件P-well1. 淀积氮化硅：氧化膜生长（湿法氧化）P-well氮化膜生长P-well涂胶P-well对版曝光有源区光刻板2. 光刻有源区：33ppt课件P-well1. 淀积氮化硅：氧化膜生长（湿法氧化）P-weP-well显影P-well氮化硅刻蚀去胶3. 场区氧化：P-well场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区SiO234ppt课件P-well显影P-well氮化硅刻蚀去胶

12、3. 场区氧化：P掩膜3： 光刻多晶硅P-well去除氮化硅薄膜及有源区SiO2P-wellP+N+N+P+N-SiP-well栅极氧化膜多晶硅栅极 生长栅极氧化膜 淀积多晶硅 光刻多晶硅35ppt课件掩膜3： 光刻多晶硅P-well去除氮化硅薄膜及有源区SiP-well生长栅极氧化膜P-well淀积多晶硅P-well涂胶光刻多晶硅光刻板P-well多晶硅刻蚀36ppt课件P-well生长栅极氧化膜P-well淀积多晶硅P-well掩膜4 ：P+区光刻 1、P+区光刻 2、离子注入B+，栅区有多晶硅做掩蔽， 称为硅栅自对准工艺。 3、去胶P-wellP+N+N+P+N-SiP-wellP-we

13、llP+P+37ppt课件掩膜4 ：P+区光刻 1、P+区光刻P-wellP+P-wellP+P-wellP+P+硼离子注入去胶38ppt课件P-wellP+P-wellP+P+硼离子注入去胶38ppt掩膜5 ：N+区光刻 1、N+区光刻 2、离子注入P+，栅区有多晶硅做掩蔽， 称为硅栅自对准工艺。 3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+39ppt课件掩膜5 ：N+区光刻 1、N+区光刻P-wellP+P-wellN+P-wellP+P+磷离子注入去胶P+P+N+N+40ppt课件P-wellN+P-wellP+P+磷离子注入去胶P+P+N掩膜6

14、：光刻接触孔1、淀积PSG.2、光刻接触孔3、刻蚀接触孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（PSG)41ppt课件掩膜6 ：光刻接触孔1、淀积PSG.P-wellP+N+N掩膜6 ：光刻接触孔P-wellP+P+N+N+淀积PSGP-wellP+P+N+N+光刻接触孔P-wellP+P+N+N+刻蚀接触孔P-wellP+P+N+N+去胶42ppt课件掩膜6 ：光刻接触孔P-wellP+P+N+N+淀积PSG43ppt课件43ppt课件掩膜7 ：光刻铝线1、淀积铝.2、光刻铝3、去胶P-wellP-wellP+P+N+N+44ppt课件掩膜7 ：光刻铝线1、淀积铝.P-wellP-wellP+P-wellP+P+N+N+铝线PSG场氧栅极氧化膜P+区P-wellN-型硅极板多晶硅N+区45ppt课件P-wellP+P+N+N+铝线PSG场氧栅极氧化膜P+区PExample: Intel 0.25 m