半导体封装制程与设备材料知识介绍-FE.ppt课件

1、半导体封装制程与设备材料知识简介Prepare By：William Guo 2007 . 11 Update半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半 导 体 制 程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)Diffusion Ion Implantation(扩散离子植入)Deposition(沉积)Wafer Inspection(晶圆检

2、查)Grind & Dicing(晶圓研磨及切割)Die Attach(上片)WireBonding(焊线)Molding(塑封) Package(包装)Wafer Cutting(晶圆切断)Wafer Reduce (晶圆减薄)Laser Cut & package saw(切割成型)Testing(测试)Laser mark(激光印字)IC制造开始前段結束后段封装开始製造完成封 裝 型 式 (PACKAGE)Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100mi

3、les)8 64DIPDual In-linePackagePlastic2.54 mm(100miles)1 direction lead325SIPSingle In-linePackage封 裝 型 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionlead1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In-linePackage封 裝 型

4、 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54 mm(100miles)PBGAPin GridArray封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic1.27 m

5、m(50miles)2 direction lead8 40SOPSmallOutlinePackagePlastic1.0, 0.8, 0.65 mm4 direction lead88200QFPQuad-FlatPack封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27, 0.762 mm(50, 30miles)2, 4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.016, 0.762 mm(50, 40, 30 m

6、iles)2040LCCLeadlessChipCarrier封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50miles)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpackAssembly Main ProcessDie Cure(Optional)Die BondDie SawPlasmaCard AsyMemo

7、ry TestCleanerCard TestPacking for OutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)半导体设备供应商介绍-前道部分PROCESSVENDORMODELSMT - PRINTERDEKHOR-2ISMT CHIP MOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINL

8、INE GRINDER & POLISHACCRETECHPG300RMSTANDALONE GRINDERDISCO 8560DETAPINGNITTOMA3000WAFER MOUNTERNITTOMA3000DICING SAWDISCODFD 6361TSKA-WD-300TPROCESSVENDORMODELDIE BONDHITACHIDB700ESECESEC2007/2008ASMASM889898CURE OVENC-SUNQDM-4SWIRE BONDERK&SK&S MAXUM ULTRASKWUTC-2000ASMEagle60PLASMA CLEANMARCHAP10

9、00TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA 3.8半导体设备供应商介绍-前道部分常用术语介绍SOP-Standard Operation Procedure 标准操作手册WI Working Instruction 作业指导书 PM Preventive Maintenance 预防性维护FMEA- Failure Mode Effect Analysis 失效模式影响分析SPC- Statistical Process Control 统计制程控制DOE- Design Of Experiment 工程试验设计IQC/OQC-Incoming/Outi

10、ng Quality Control 来料/出货质量检验MTBA/MTBF-Mean Time between assist/Failure 平均无故障工作时间CPK-品质参数UPH-Units Per Hour 每小时产出 QC 7 Tools ( Quality Control 品管七工具 ) OCAP ( Out of Control Action Plan 异常改善计划 ) 8D ( 问题解决八大步骤 ) ECN Engineering Change Notice ( 制程变更通知 ) ISO9001， 14001 质量管理体系前道后道EOLWire Bond引线键合Mold模塑Las

11、er Mark激光印字Laser Cutting激光切割EVI产品目检 SanDisk Assembly Process Flow SanDisk 封装工艺流程 Die Prepare芯片预处理ie Attach芯片粘贴Wafer IQC来料检验Plasma Clean清洗Plasma Clean清洗Saw Singulation切割成型 SMT表面贴装PMC模塑后烘烤SMT（表面贴装）-包括锡膏印刷(Solder paste printing),置件(Chip shooting),回流焊(Reflow),DI水清洗(DI water cleaning),自动光学检查(Automatic op

12、tical inspection),使贴片零件牢固焊接在substrate上StencilSubstrateSolder paste pringtingChip shootingReflowOvenDI water cleaningAutomatic optical inpectionCapacitorDI waterCameraHot windNozzlePADPADSolder pasteDie Prepare(芯片预处理) To Grind the wafer to target thickness then separate to single chip-包括来片目检(Wafer In

13、coming), 贴膜(Wafer Tape),磨片(Back Grind),剥膜(Detape),贴片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.Wafer tapeBack GrindWafer DetapeWafer Saw Inline Grinding & Polish - Accretech PG300RM Transfer Coarse Grind 90%Fine Grind 10% Centrifugal Clean Alignment & C

14、entering Transfer Back Side Upward De-taping Mount Key Technology: 1. Low Thickness Variation: +/_ 1.5 Micron2. Good Roughness: +/- 0.2 Micron3. Thin Wafer Capacity: Up to 50 Micron4. All-In-One solution , Zero Handle Risk2.Grinding 相关材料A TAPE麦拉B Grinding 砂轮C WAFER CASSETTLE工艺对TAPE麦拉的要求：1。MOUNTNo de

15、lamination STRONG2。SAW ADHESIONNo die flying offNo die crack工艺对麦拉的要求：3。EXPANDINGTAPE Die distanceELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contamination3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；4.Grinding 配套设备A T

16、aping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机 Wafer Taping - Nitto DR300IICut TapeTaping AlignmentTransfer Transfer Back Key Technology: 1. High Transfer Accuracy: +/_ 2 Micron2. High Cut Accuracy : +/- 0.2 mm3. High Throughput : 50 pcs wafer / Hour4. Zero Void and Zero Wafer Broken DetapinglWafer moun

17、tWafer frame晶 圓 切 割 (Dicing)Dicing 设备:A DISCO 6361 系列B ACCERTECH 东京精密AW-300TMain Sections IntroductionCutting Area: Spindles (Blade, Flange, Carbon Brush), Cutting Table, Axes (X, Y1, Y2, Z1, Z2, Theta), OPCLoader Units: Spinner, Elevator, Cassette, Rotation ArmBlade Close-ViewBladeCutting WaterNozz

18、leCooling Water NozzleDie Sawing Disco 6361 Key Technology:1. Twin-Spindle Structure.2. X-axis speed: up to 600 mm/s. 3. Spindle Rotary Speed : Up to 45000 RPM.4. Cutting Speed: Up to 80mm/s.5. Z-axis repeatability: 1um.6. Positioning Accuracy: 3um . RearFrontA Few ConceptsBBD (Blade Broken Detector

19、)Cutter-set: Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain晶 圓 切 割 (Dicing)Dicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片Wmax , Wmin , Lmax , DDY ,DY 規格DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 1000,4 90/1004,8,11 9011,15IC type loop typeCapillary Go

20、ld Wire Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA. ) Gold Wire Data ( Wire Diameter , Type , EL , TS)焊线(Wire Bond)3.Wire Bond 辅助设备A Microscope 用于测loop heightB Wire Pull 拉力计（DAGE4000）C Ball Shear 球剪切力计D Plasma 微波/等离子清洗计Ball SizeBall Thickness 單位: um，Mil 量測倍率: 50X Ball Thickness 計算公式 60 um BPP

21、 1/2 WD=50% 60 um BPP 1/2 WD=40%50%Ball SizeBall Size & Ball ThicknessLoop Height 單位: um，Mil 量測倍率: 20XLoop Height 線長Wire Pull 1 Lifted Bond (Rejected) 2 Break at neck (Refer wire-pull spec) 3 Break at wire ( Refer wire-pull spec) 4 Break at stitch (Refer stitch-pull spec) 5 Lifted weld (Rejected)Bal

22、l Shear 單位: gram or g/mil Ball Shear 計算公式 Intermetallic（IMC有75%的共晶,Shear Strength標準為6.0g/mil。SHEAR STRENGTHBall Shear/Area (g/mil) Ball Shear = x; Ball Size = y; Area = (y/2) x/(y/2) = z g/mil等离子工艺Plasma Process气相-固相表面相互作用 Gas Phase - Solid Phase InteractionPhysical and Chemical分子级污染物去除Molecular Lev

23、el Removal of Contaminants30 to 300 Angstroms可去除污染物包括 Contaminants Removed难去除污染物包括 Difficult Contaminants Finger PrintsFluxGross ContaminantsOxidesEpoxySolder MaskOrganic ResiduePhotoresistMetal Salts (Nickel Hydroxide)Plasma Clean March AP1000 Key Technology:1. Argon Condition, No oxidation.2. Vacuum Pump dust collector.3. Clean Level : blob Test Angle 8 Degree.PlasmaPCB SubstrateDie+Electrode+ArWell Cleaned with Plasma 80 o 8 o Organic Contamination vs Contac