TFT LCD黄光制程介绍

IVOCONFIDENTIALPhotoIntroductionINTArray

2023/12/17PhotoResistThinFilmGlass

ArrayProcessExposureLightPhotoMaskStripThinFilmGlassPRcoatingPhotoResistDevelopEtch2023/12/17PhotoProcessPhotoprocess:Coating--->Exposure--->DevelopmentCoating：将光阻均匀地涂布于基板表面Exposure：由紫外线透射光罩将图形转写至光阻表面Development：利用碱性显影液將紫外线照射的光阻去除以形成图形2023/12/17ThestructureofDNSSK-1100GLinear-coating(Vacuumdry)InEUVRB&AAjetAKDryOutPost-bakeDHBInOutPre-BakeTitlerorE.E.Exp.BF90°turnInOutOutAOILorConveyorAKDryRinse(Sub.Direct)Dev.1,230,7305,9105,5102023/12/17Cleanerintroduction2023/12/17CleanerintroductionThesimpledrawingofcleaner2023/12/17PhotoProcess-Cleaner目的

:减小接触角和减少灰尘控制参数:E-UVcleanabilityRinseflowrateMistcontrolanddryperformanceThinfilmconditionCleanerintroduction2023/12/17ThestructureofE-UVchamberCleanerintroduction2023/12/17ThemeasurementofcontactangleCleanerintroduction2023/12/17Thesimpledrawingofrollerbrush&AAjetrinsesection

Cleanerintroduction2023/12/17AAJET

Cleanerintroduction2023/12/17ThebasicprincipleofinclinedrinseCleanerintroduction2023/12/17BrushstructureCleanerintroduction2023/12/17AirknifeWaterstripperVerticaltilt60°Horizontaltilt60°Cleanerintroduction2023/12/17ThedryprocedureofAKCleanerintroduction2023/12/17AirKnifeCleanerintroduction2023/12/17Coaterintroduction2023/12/17CoaterintroductionDehydrationbake2023/12/17DehydrationbakeCoaterintroduction2023/12/17Purpose:ToIncreasetheAdhesionofPhotoresistAdhesion:HMDS(Hexamethyldisilazane);[(CH3)3Si]2NHKeyparameter:AdhesionMethodAdhesionTimeTemperatureExhaustFunction:Si-O-H----OH2+[(CH3)3Si2NHSi-O-Si-(CH3)3PhotoProcess-AdhesionCoaterintroduction2023/12/17PhotoProcess-AdhesionCoaterintroduction2023/12/17Resist:

树脂（20%）感光剂

(PAC)（5%）溶剂（75%）添加剂

PhotoProcess-CoatingCoaterintroduction2023/12/17目的1.将MASK上的图案转移到胶中2.在后续工艺中保护下面的材料Coaterintroduction2023/12/17ExposureLightPositiveTypeNegativeTypeDevelopingResistThinFilmSubstrateMaskChrome正光阻：曝光后，光照到部分显影后去除负光阻：曝光后，光照到部分显影后保留Coaterintroduction2023/12/17树脂惰性的聚合物（包括碳、氢、氧的有机高分子）基质，用于把PR中的不同材料聚在一起的黏合剂。给予PR的机械和化学性质（黏附性、柔顺性、热稳定性）感光剂PR内的光敏成分，对光形式的辐射能，特别是紫外区，会发生光化学反映。Coaterintroduction2023/12/17溶剂使PR保持液体状态，对PR的化学性质几乎没有影响添加剂专有化学品，用来控制和改变PR材料的特定化学性质或光响应特性，包括控制PR反射率的染色剂Coaterintroduction2023/12/17PR的物理特性分辨率对比度敏感度粘滞性黏附性抗蚀性表面张力存储和传送沾污和颗粒Coaterintroduction2023/12/17分辨率能够在玻璃基板上形成符合要求的最小的特征图形。形成的CD越小，PR的分辨能力和光刻系统就越好Coaterintroduction2023/12/17对比度PR从曝光区域到非曝光区域的过度的陡度对比度差对比度好FilmGlassPRFilmGlassPRCoaterintroduction2023/12/17敏感度PR产生良好图形所需要的一定波长的最小能量值（MJ/C㎡），对于一定的曝光能量，PR的吸收量越大越好Coaterintroduction2023/12/17粘滞性粘滞性与时间有关，会随着PR溶剂的挥发增加。粘滞性增加，PR流动趋势变小，厚度会增加。Coaterintroduction2023/12/17粘附性PR与下层材料黏附之强度。如黏附性不好，会导致表面图形的变形。Coaterintroduction2023/12/17抗蚀性PR必须保持黏附性，并在蚀刻工艺中保护下层材料。如在高温下进行处理，还需要有热稳定性。Coaterintroduction2023/12/17表面张力液体中将表面分子拉向液体主体内的分子间吸引力。Coaterintroduction2023/12/17沾污和颗粒在PR涂布之前，要使用Filter，使沾污控制在最小程度Coaterintroduction2023/12/17SpinCoatingSlit+SpinCoatingslitCoaterCoatingMethodsCoaterintroduction2023/12/17

SlitCoatingCoaterintroduction2023/12/17

ExposureIntroduction

2023/12/17LocationsofUnitsMaskPellicleParticleCheckerMaskChangerMaskCassetteConsoleBoxPlateControlBoxMercuryLampMainBodyExposureIntroduction2023/12/17LayoutExposureIntroduction2023/12/17亮场掩膜版暗场掩膜版MASK（掩膜版）分类ExposureIntroduction2023/12/17材料石英：高光学透射和低温度膨胀。铬：沉积在掩膜版上的不透明材料。有时会在铬表面形成一层氧化铬抗反射层。ExposureIntroduction2023/12/17OperationModeoftheConsoleInlinemodeCommunicationbetweenMPAandI/FPlateisloadedbyI/FarmStandalonemodeNocommunicationbetweenMPAandI/FPlateisloadedbyHandConsoleMode(nouse)NocommunicationbetweenMPAandConsoleExposureIntroduction2023/12/17UM06System光罩只在Y方向移动玻璃基板可在XY方向移动梯形镜凹面镜凸面镜ExposureIntroduction2023/12/17Resolutionvs.WavelengthR:resolution(minimallinewidth)K:constantλ:wavelengthNA:numericalapertureResolutionofExposureMachineTFT-LCDexposureequipmentResolution~3umExposureIntroduction2023/12/17IlluminationSystem光源：8千瓦超高压水银灯，2只Lamp：Standardtype--750小时，Longtype--1000小时波长：exposure----340nm~460nm[g/h/iline，436nm/405nm/365nm]alignment---536nm~600nm[d/eline，578nm/546nm]强度：可见光波长范围（nm）紅外輻射紫外輻射700500600400ExposureIntroduction2023/12/17Mask/PlateAAAA：AutoAlignment自动对准，分为预对准(Pre)和精对准(Fine)两种对准：maskaligntomaskstage，platealigntomask光罩对准：maskFMAmark--->stagesetmark基板对准：platealignmentmark--->maskTV-pre/finemarkExposureIntroduction2023/12/17MaskStage架構說明

Mask放到maskstage後,先由CCD(3.85X)做maskpre-alignment,接著做maskfinealignment(由maskalignmentmark去對準maskstage上的setmark—此動作由X/Y/Thetastage完成),完成以上動作後,maskstage上的LockPads會將X/Y/Thetastage固定在maskstage上,而maskstage是浮在maskguide及Yawguide上的.Setmark與mask之間隔為10um.Canonmasktype:Longmask(520X800,t=10mm),而其對應在maskstage上的硬體裝置有Ypressingcylinder及maskreferencepin.Maskstage在曝光時只做Y方向移動(scan).ExposureIntroduction2023/12/17Patechuckandmechanicalpre-alignmentsensor

1.Chucksize依玻璃大小訂做2.直放或橫放時各有3個pre-alignmentsensor3.Mechanicalpre-alignmentsensor只做玻璃相對位置計測用(touch玻璃邊緣)ExposureIntroduction2023/12/17LiftPin

1.Lift高度:chuck表面往上算50mm(四根liftpin之間的高度差為0.2mm（以下)。2.位置再現精度:±0.1mm。3.Liftstroke:55mm(上限:chuck表面往上50mm,下限:chuck表面往下5mm,即-5mm)。4.動作時間:0.9sec(0.2sec/由chuck下面-5mm移動到chuck表面

+停止時間,0.7sec/chuck表面往上移50mm)。ExposureIntroduction2023/12/17PlateAFCAFC：AutoFocusCompensation自动聚焦DOF：30um，在其范围内的光阻曝光显影后图形清晰如果stage(基板承载平台)平坦度超出规格，导致基板上光阻位于DOF之外，那么曝光显影后会导致CD异常。DOF:30um光阻(1.5um±3%)ExposureIntroduction2023/12/17JobFlowinInlineModeJobRegistration/Download

程式选择

MaskLoading光罩装载

MaskUnloading光罩卸载

PlateUnloading基板卸载

PlateExposure基板曝光

PlateAutoAlignment基板对准

PlateAutoFocus基板聚焦

MaskAutoAlignment光罩对准

PlateLoading基板装载ExposureIntroduction2023/12/17Optimize-3ActionFlowshot6shot2shot3shot5shot4shot1P1P2P3ExposureIntroduction2023/12/17Developerintroduction2023/12/17DeveloperintroductionDeveloperstructure2023/12/17Purpose:Todissolvetheexposurearea(forpositive-typeresist)Mechanism:KeyParameter:DispenseMethodTemperature(Developer)DevelopertimeDeveloperConcentrationPhotoProcess-DeveloperDeveloperintroduction2023/12/17PhotoProcess-DeveloperDeveloperintroduction2023/12/17LineWidth(

m)DevelopmentTime(sec)ProceedingofDevelopmentDeveloperintroduction2023/12/17DDS

(DeveloperDilutionSystem)

DPF-4060

(DeveloperPurificationFiltrationsystem)

NagasedeveloperrecyclesystemDeveloperintroduction2023/12/17Totalpitch2023/12/17測定座標値以Table座標値＋Camera座標来表現。測定Edge検出点(Ｘ,Ｙ)=(Ｘt＋ＸC

,Ｙt＋ＹC)Camera座標系Table座標系測定座標系ＸCＹCＸＹＸtＹtTotalpitch2023/12/17Machineconfiguration測定用CCDcameraFiberlaser測長機GlassairChucktableAircylinderstageLaserheadMicroscopeLaserautofocus防震台xy2023/12/17LaserAF(knifeedgemethod)JustfocusFarNearPAPB2023/12/171300mm1100mm(0,0)191021725261833414234311124192728203543443651314621293022374546387151682331322439