第一章-微纳加工技术发展概述

微纳加工技术原理第一章微纳加工技术发展概述1主要内容1.11.21.3本课程的主要内容集成电路的发展MEMS技术简介1.4苏州纳米区简介231.1课程的主要内容第一章微纳加工技术发展概述第二章CMOS工艺流程第三章洁净室、晶圆片清洗与吸杂处理第四章光刻第五章薄膜淀积第六章刻蚀第七章热氧化和Si-SiO2界面第八章离子注入第九章扩散（已学）第十章后端工艺第十一章未来趋势与挑战4教材5作者：唐天同，王兆宏西安交通大学电子工业出版社，2010教材6(美)JamesD.Plummer,MichaelD.Deal,PeterB.Griffin著,

2005，电子工业出版社分数比例作业15%考勤15%实验20%考试50%71.2

集成电路工艺的发展1.2.2促成集成电路产生的几项关键发明1.2.3半导体器件1.2.1

集成电路工艺的发展历程8•

1959

and

1990

integrated

circuits.•

Progress

due

to:

-

Feature

size(特征尺寸)

reduction13%

years

(Moore’s

Law).

-

Increasing

chip

size(芯片尺寸)

≈

16%

per

year.1.2.1

集成电路工艺的发展历程Evolution

of

IntegratedCircuits

Fabrication9特征尺寸：工艺制造中晶圆片表面能刻印出图形的最小尺寸。OnApril

19,

1965

Electronics

Magazine

published

a

paperby

Gordon

Moore

in

which

he

made

a

prediction

about

thesemiconductor

industry

that

has

become

the

stuff

of

legend.“Thenumberoftransistorsincorporatedinachipwillapproximatelydoubleevery24months.”Known

as

Moore'sLaw,

his

prediction

has

enabledwidespread

proliferation

of

technology

worldwide,

and

todayhas

become

shorthand

for

rapid

technological

change.

Moore’s

Law1010亿GordonMoore：Intel创始人/pressroom/kits/events/moores_law_40th/index.htm?iid=tech_mooreslaw+body_presskit11•

The

era

of

“easy”

scaling

is

over.

We

are

now

in

a

period

where

technology

and

device

innovations

are

required.

Beyond

2020,

new

currently

unknown

inventions

will

be

required.IC最小特征尺寸的发展历史及规划Device

Scaling

Over

Time12•

1990

IBM

demo

of

Å

scale

“lithography”.•

Technology

appears

to

be

capable

of

making

structures

much

smaller

thancurrently

known

device

limits.

ITRS

at

/

13ITRS硅技术发展规划ITRS—InternationalTechnologyRoadmapforSemiconductors/

预言硅主导的IC技术蓝图由欧洲电子器件制造协会（EECA）、欧洲半导体工业协会（ESIA）、日本电子和信息技术工业协会（JEITA）、韩国半导体工业协会（KSIA）、台湾半导体工业协会（TSIA）和半导体工业协会（SIA）合作完成。器件尺寸下降，芯片尺寸增加互连层数增加掩膜版数量增加工作电压下降http:///instruct/bachelor/jpkc/jcdlgy/supplement/2011ExecSum.pdf14Advantages

and

Challenges

Associated

with

the

Introduction

of

450mm

Wafers

:Aposition

paper

reportsubmitted

by

the

ITRS

Starting

Materials

Sub-TWG,

June

2005./papers.htmlLinewidth

vs.

Fab

Cost151.2.2促成集成电路产生的几项关键发明•

Invention

of

the

bipolartransistor(点接触晶体管)-

1947,

Bell

Labs.W.ShockleyJ.BardeenW.Brattain1956年诺贝尔物理奖点接触晶体管：基片是N型锗，发射极和集电极是两根金属丝。这两根金属丝尖端很细，靠得很近地压在基片上。金属丝间的距离：~50μm16171948年W.Shockley提出结型晶体管概念1950年第一只NPN结型晶体管18•

Grown

junction

transistortechnology

（生长结技术）of

the

1950s结型晶体管的制备19Ge•

Alloy

junction

technology（合金结技术）of

the

1950s.•

Double

diffused

transistortechnology(气相源扩散工艺，1956福勒和赖斯)in1957，Bell

Labs.PN结裸露在外面20加热Ge高温炉Si腐蚀形成台面结构211955年，IBM608，3000多个锗晶体管，重约1090kg第一个商用晶体管计算机221958年Jack·Kilby发明的世界上第一块基于锗的集成电路，德州仪器相移振荡器简易集成电路专利号：No.31838743，批准时间1964.6.26•

The

planar

process

(Hoerni

-

Fairchild仙童公司,

late

1950s).•

First

“passivated(钝化)”

junctions.平面工艺

planar

process23•

平面工艺：二氧化硅屏蔽的扩散技术光刻技术JeanHoerni•

Basic

lithography

process–––Apply

photoresistPatterned

exposureRemove

photoresist

regions––Etch

waferStrip

remaining

photoresist光刻

Photolithography2425Robert

Noyce与他发明的集成电路专利号：No.2981877，批准时间1961.4.26简短回顾：一项基于科学的伟大发明Bardeen,Brattain,Shockley,FirstGe-basedbipolartransistorinvented1947,BellLabs.NobelprizeKilby(TI)&Noyce(Fairchild),Inventionofintegratedcircuits1959,NobelprizeAtalla,FirstSi-basedMOSFETinvented1960,BellLabs.Planartechnology,JeanHoerni,1960,

Fairchild

FirstCMOScircuitinvented1963,Fairchild“Moore’slaw”coined1965,FairchildDennard,scalingrulepresented1974,IBMFirstSitechnologyroadmappublished1994,USA26基本器件BJT：模拟电路及高速驱动MOS器件：高密度、更低功耗、更大的设计灵活性

NMOS,PMOS,CMOS20世纪70年代1.2.3

半导体器件PN结:27BECppn+n-p+p+n+n+BJT28GateSourceDrain衬底SubstrateMOS:金属-氧化物-半导体NMOS29栅极：开关作用，取决于电压大小。N+：提供电子，提高开关时间。绝缘层防止Na+、K+干扰。沟道为P型。n+n+p+p+G端为高电平时导通G端为低电平时导通3031反向器输入：高电平，相当于1，输出0输入：低电平，相当于0，输出1没有形成回路，功耗低CMOSCMOS(ComplementaryMetalOxideSemiconductor):PMOS管和NMOS管互补共同构成的MOS集成电路。32•

Metal

Planarizationrequired

for

multiplemetal

layers––––––Metal

DepositionPatterningFill

DielectricPlanarizationContact

viasContact

DepositionMultiple

Metal

Layers33•

ICs

are

widely

regarded

as

one

of

the

key

components

of

the

information

age.•

Basic

inventions

between

1945

and

1970

laid

the

foundation

for

today‘ssilicon

industry.•

For

more

than

40

years,

"Moore's

Law"

(a

doubling

of

chip

complexity

every2-3

years)

has

held

true.•

CMOS

has

become

the

dominant

circuit

technology

because

of

its

low

DC

poweronsumption,

high

performance

and

flexible

design

options.

Future

projectionssuggest

these

trends

will

continue

at

least

15

more

years.•

Silicon

technology

has

become

a

basic

“toolset”

for

many

areas

of

science

and

engineering.•

Computer

simulation

tools

have

been

widely

used

for

device,

circuit

and

system

design

for

many

years.

CAD

tools

are

now

being

used

for

technology

design.•

Chapter

1

also

contains

some

review

information

on

semiconductor

materials

semiconductor

devices.

These

topics

will

be

useful

in

later

chapters

of

the

text.Summary

of

Key

Ideas34Richard

Feynman,1959“There’s

Plenty

of

Room

at

the

Bottom”35

一根头发=100微米=100000纳米1.3MEMS技术简介MEMS系统的定义MICRO-ELECTRO-MECHANICALSYSTEMS，集物理、化学和生物的传感器、执行器与信息处理和存储为一体的微型集成系统。3636(Tai,

Fan

&

Muller)19701980

HNA1960EDP

Pressure

Sensor

(Honeywell)Anodic

BondingKOHSi

PressureSensor(Motorola)MEMS的历史

Si

as

a

mechanical

material

(Petersen)SFB

TMAH

1990Thermo-pneumatic

valve

(Redwood)

SFB

Pressure

Sensor

(NovaSensor)

DRIE

!!XeF2/BrF3

2,000process

(US

Patent)

1950RGT

(Nathanson

et

al)Metal

Light

Valve

(RCA)

ADXLAccelerometerPolySi

Micromotor

IR

imager

(Honeywell)

PolySi

Comb

Drive

(Tang,

Howe)

LIGAPolySi

beams(Howe,

Muller)

BJT

TransistorMetal

sacrificialIC

Optical

MEMS

RF

MEMS

Si

Gyro

(Draper)DMD

(TI)Bio

MEMS37371987198719871987Berkeley:

Micromotor

戴聿昌

MEMS

becomes

the

name

in

U.S.Analog

Devices

begins

accelerometer

projectFirst

MEMS

Conference,

IEEE

MEMS

First

Eurosensors

conference,

EuropeThe

motors

stimulating

major

interest

in

WORLD！

1987年，MEMS的里程碑38381994年，DRIE技术问世

1994

DRIE专利申请MEMS进入体硅加工时代

3939MEMS的产学研图谱4040全球汽车MEMS传感器的销售额将在2012年增长16%，达到23.1亿美元。41灯光调节，刹车系统……汽车上的MEMS加速度计一辆高端的汽车会有上百个传感器，包括30~50个MEMS传感器。

安全气囊

高g值加速度计，约80%汽车

侧翻保护

低g值加速度计

车辆动态控制（ESP）

低g值加速度计、陀螺仪和组合

惯性模块用于车身电子稳定系统

TPMS轮胎压力实时监视系统

发动机机油压力传感器

刹车系统空气压力传感器

发动机进气歧管压力传感器

柴油机共轨压力传感器42不同汽车种类的MEMS需求43加速度计和陀螺仪的应用分布44美新赵阳46手机和平板电脑中的运动传感器将是未来5年内热门技术中的热门苹果引爆MEMS传感器应用热潮