Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应

20

3

Vol.20,No.3

Mar.,1999

1999

3

CHINESEJOURNALOFSEMICONDUCTORS

Y

Sol-Gel

PTC

1

2

1

1

1

(1

830011)

(2

200050)

Sol2Gel

PtTiSi(100)

Y

BaTiO3

PTC

4

,

,

,

2

2

2,

.

2

RT

138,

2.

PACC:7280J,7360F,2940,8120

1

BaTiO

,

,

3

PTC(PositiveTemperatureCoefficient)

.

,

,BaTiO

3

,

,

[3]MOCVD[4]

2

[2]

.

,

2

[57]

,

,

.

BaTiO

,

PTC

3

[8,9],

.

,

PTC

.

PTC

,

PTC

.

2

Y

BaTiO

3

,

PTC

.

2

,

1973

,

,

,

1970

1997208204

,1998202215

3

:

Y

Sol2Gel

PTC

247

11,

Ti

013mol%)

.

Ti

Ba(Ac),

2

3mol%.

Y(NO

)(

3

,

Ti

3

,

Ba

.

Ba

Ti

.

,

24h,

,

.

PtTi

,

,

(100)Si

30s,

.

,

6000rmin,

,

,

,

.

.

,

Al

,

1mm.

DTATGA

,

TGA7

5

,

,

min.

Y22A

X

.

[10],

HP34401A

,

2

RT

.

3BaTiO

XRD

DTATGA

3

1

,

,

TGA

27wt%.

230

,

,

1BaTiO

DTATGA

3

.

230540

540

,

,

33wt%.DTA

540665

.

,TGA

.

2(a)

XRD.

500

30

,

1

650

,

800

2

(

2(b))

2

BaTiO

X

3

(a)

1

BaTiO3

X

;(b)BaTiO3

800

1

2

X

248

20

Ti

,

850

1

Ti.

Ti

PTC

.[10,11]

4Y

BaTiO

R-T

3

BaTiO

,

,

BaTiO

,

3

3

Y3+Ba2+

,

Ba2+

,

.

[10]

DTATGA

,

,

,

550

200

h

30min.

XRD

850

,

3h,

h

100

.

Y

BaTiO

,

2

RT

3

:

22

.

3

6080nm[5].

,

2

HP34401A

,

6

.

.

013015V

,

,

,

,

.Y

.

,

,

.

,

3Y

BaTiO

3

,

,

,

2

RT

,

,

.

2

RT

2

,

4

.

758.

,

138

.

PTC

,

,

,

,

.

5

,BaTiO

Y

PTC

,

,

3

,

,

SiAl

,

PbSr

,BaTiO

PTC

.

,

3

.BaTiO

.

3

3

:

Y

Sol2Gel

PTC

249

[1]C.Feldman,Rev.Sci.Instrum.,1955,26:463.

[2]K.Sreenivas,A.MansinghandM.Sayer,J.Appl.Phys.,1987,62:4475.

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[4]L.A.Wills,B.W.Wessels,D.S.Richesonetal.,Appl.Phys.Lett.,1992,60:41.

[5]M.Sedlar,M.Sayer,L.Weaver,J.Sol2GelScienceandTechnology,1995,5:201.

[6]Woei2KwoKuo,Yong2ChienLing,J.Mater.Sci.,1994,29:5625.

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[8]

[9]SugiyamaOsamu,ShizuokaInd.ShizuokaKogyoGijutsuSentaKeakyuHokoka1995,40:78(Japan).

[10],PTC,1989,p196,107,3.

,

,PTC

,

,

,1993,p58.

,

,

,

[11]YamamotoNobuyuki,FuntaiayobiFunmatuTakin,1987,34(2):85(Japan).

PTCEffectofY-DopedBaTiOThinFilm

3

PreparedbySol-GelProcess

GongJian1,FuXiaorong2,SongShigeng1,TanHui1,TaoMingde1

(1

XinjiangInstituteofPhysicsChineseAcademiaofScienceUrumqi

,,

830011)

(2

StateKeyLaboratoryofFunctionalMaterialsforInformaticsShanghaiInstituteofMetallurgy

,,

TheChineseAcademiaofScience,Shanghai200050)

Received4August1997,revisedmanuscriptreceived15February1998

Abstract

ThispaperreportsthePTCeffectofY2dopedBaTiOthinfilmonPtTiSi

3

(100)substratesbyusingsol2gelprocesses.Wechosebariumacetateandtetrabuyyl

titanateasprecursors.Thesolventsystemisethyleneglycol2methoxyethanol2methanol2

water,appendedacetylacetoneaschelatingagentsandpolyethyleneglycolassurfactant.

TheR2Tcharacteristicofthinfilmismeasure