IRF7811AVTRPBF;IRF7811AVPBF;中文规格书,Datasheet资料

IRF7811AVPbF

PD-95265

IRF7811AVPbF

•N-ChannelApplication-SpecificMOSFETs

•IdealforCPUCoreDC-DCConverters

•LowConductionLosses

•LowSwitchingLosses

•MinimizesParallelMOSFETsforhighcurrent

applications

A

A

D

S

S

1

2

3

4

8

7

D

•100%RTested

G

•Lead-Free

S

6

5

D

D

Description

G

ThisnewdeviceemploysadvancedHEXFETPower

MOSFETtechnologytoachieveanunprecedented

balanceofon-resistanceandgatecharge.Thereduced

conductionandswitchinglossesmakeitidealforhigh

efficiencyDC-DCconvertersthatpowerthelatest

generationofmicroprocessors.

TopView

SO-8

DEVICECHARACTERISTICS

TheIRF7811AVhasbeenoptimizedforallparameters

thatarecriticalinsynchronousbuckconvertersincluding

IRF7811AV

11mΩ

R

TheIRF7811AVoffersanextremelylowcombinationof

,gatechargeandCdv/dt-inducedturn-onimmunity.

RDS(on)

DS(on)

QG

17nC

Q&R

forreducedlossesinbothcontroland

QSW

6.7nC

synchronousDS(on)FETapplications.

sw

QOSS

8.1nC

Thepackageisdesignedforvaporphase,infra-red,

convection,orwavesolderingtechniques.Power

dissipationofgreaterthan2Wispossibleinatypical

PCBmountapplication.

AbsoluteMaximumRatings

Parameter

Drain-to-SourceVoltage

Symbol

IRF7811AV

Units

VDS

30

V

VGS

±20

Gate-to-SourceVoltage

ContinuousOutputCurrentTA=25°C

10.8

A

ID

(VGS≥4.5V)

TL=90°C

11.8

100

PulsedDrainCurrent

IDM

PD

TA=25°C

TL=90°C

2.5

PowerDissipation

W

°C

A

3.0

-55to150

Junction&StorageTemperatureRange

ContinuousSourceCurrent(BodyDiode)

PulsedSourceCurrent

TJ,TSTG

IS

ISM

2.5

50

ThermalResistance

Parameter

Symbol

RθJA

RθJL

Typ

–––

–––

Max

50

Units

MaximumJunction-to-Ambient

MaximumJunction-to-Lead

°C/W

20

1

08/17/04

/

IRF7811AVPbF

ElectricalCharacteristics

Parameter

SymbolMinTypMaxUnits

Conditions

Drain-to-SourceBreakdownVoltage

V(BR)DSS

30

––––––

V

VGS=0V,ID=250µA

StaticDrain-to-SourceOn-ResistanceRDS(on)

–––

1.0

11

14

3.0

50

20

mΩVGS=4.5V,ID=15A

VDS=VGS,ID=250µA

µAVDS=30V,VGS=0V

µAVDS=24V,VGS=0V

GateThresholdVoltage

VGS(th)

–––

–––

–––

V

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

0.5

Drain-to-SourceLeakageCurrent

IDSS

–––100mAVDS=24V,VGS=0V,TJ=100°C

–––±100nAVGS=±20V

Gate-to-SourceLeakageCurrent

TotalGateCharge,ControlFET

TotalGateCharge,SynchFET

Pre-VthGate-to-SourceCharge

Post-VthGate-to-SourceCharge

Gate-to-Drain("Miller")Charge

SwitchCharge(Qgs2+Qgd)

OutputCharge

IGSS

Qg

Qg

Qgs1

Qgs2

Qgd

QSW

QOSS

RG

17

26

nCVDS=24V,ID=15A,VGS=5.0V

VGS=5.0V,VDS<100mV

14

21

3.4

1.6

5.1

6.7

8.1

–––

8.6

21

–––

–––

–––

–––

12

VDS=16V,ID=15A

VDS=16V,VGS=0

Ω

GateResistance

4.4

–––

–––

–––

–––

Turn-OnDelayTime

td(on)

tr

td(off)

tf

–––

–––

–––

–––

nsVDD=16V

ID=15A

VGS=5.0V

ClampedInductiveLoad

pFVGS=0V

VDS=10V

RiseTime

Turn-OffDelayTime

43

FallTime

10

InputCapacitance

Ciss

Coss

Crss

–––1801–––

OutputCapacitance

–––

–––

723–––

ReverseTransferCapacitance

46

–––

DiodeCharacteristics

Parameter

SymbolMinTypMaxUnits

Conditions

DiodeForwardVoltage

VSD

TJ=25°C,SI=15A,VGS=0V

–––

–––

1.3

V

di/dt=700A/µs

VDD=16V,VGS=0V,ID=15A

ReverseRecoveryCharge

Qrr

–––

50

–––

nC

ReverseRecoveryCharge

(withParallelSchottsky)

di/dt=700A/µs,(with10BQ040)

VDD=16V,VGS=0V,ID=15A

Qrr

–––

43

–––

nC

Notes:

Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.

Pulsewidth≤400µs;dutycycle≤2%.

Whenmountedon1inchsquarecopperboard,t<10sec.

Typ=measured-Q

TypicalvaluesofR

oss

(on)measuredatV=4.5V,Q,QandQmeasuredatV=5.0V,I=15A.

DS

RθismeasuredatTJapproximately90°CGS

GSWOSSGSF

2

/

IRF7811AVPbF

2.0

1.5

1.0

0.5

0.0

6

4

2

0

e

c

n

a

ID=15A

ID=15A

V=16V

)

V

t

DS

s

(

i

e

g

a

s

e

R

t

l

n

o

O

V

)

d

e

e

e

z

i

c

c

r

r

u

u

l

a

o

o

Sm

S

-

r

-

o

o

o

t

N

(

t

-

-

n

e

i

t

a

a

r

G

,

D

,

S

)

G

n

V

o

(

S

D

VGS=4.5V

R

-60

-40

-20

TJ,JunctionTemperature

0

20

40

60

80

100

120

140

160

0

5

10

15

20

(°C)

Q,TotalGateCharge(nC)

G

Figure1.NormalizedOn-Resistancevs.Temperature

Figure2.Gate-to-SourceVoltagevs.TypicalGateCharge

)

0.020

0.018

0.016

0.014

0.012

0.010

0.008

3000

Ω

VGS=0V,f=1MHZ

Ciss=Cgs+Cgd,CdsSHORTED

Crss=Cgd

ID=15A

(

e

c

n

a

2500

2000

1500

1000

500

t

s

Coss=Cds+C

gd

i

s

e

R

)

F

Ciss

n

p

O

(

e

e

c

n

a

t

Coss

c

r

u

o

S

-

i

a

p

a

C

o

t

-

n

,

i

C

a

r

D

,

)

n

o

(

Crss

S

D

R

0

3.0

6.0

9.0

12.0

15.0

1

10

100

VGS,Gate-to-SourceVoltage(V)

VDS,Drain-to-SourceVoltage(V)

Figure3.TypicalRds(on)vs.Gate-to-SourceVoltage

Figure4.TypicalCapacitancevs.Drain-to-SourceVoltage

100

100

)

A

)

A

(

TJ=150°C

(

t

TJ=150°C

n

t

n

e

e

r

r

r

u

r

u

C

10

10

C

e

n

c

i

r

a

u

TJ=25°C

r

o

D

S

e

TJ=25°C

-

o

s

t

r

-

e

n

v

i

1

1

a

e

r

R

D

,

,

I

D

S

D

I

VDS=15V

20µsPULSEWIDTH

VGS=0V

0.1

0.1

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.3

0.60.91.2

V,Source-to-DrainVoltage(V)

SD

1.5

VGS,Gate-to-SourceVoltage(V)

Figure5.TypicalTransferCharacteristics

Figure6.TypicalSource-DrainDiodeForwardVoltage

3

/

IRF7811AVPbF

100

)

A

D=0.50

J

h

t

Z

0.20

0.10

0.05

(

10

e

s

n

o

p

s

e

R

PDM

0.02

0.01

l

a

m

1

t1

r

e

SINGLEPULSE

(THERMALRESPONSE)

h

t2

T

Notes:

1.DutyfactorD=t1/t2

2.PeakTJ=PDMxZthJA+TA

0.1

0.0001

0.001

0.01

0.1

1

10

100

1000

t,RectangularPulseDuration(sec)

1

Figure7.MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient

50u

8V

5uH

Schottky-6A

VDD

450

50u

16Vz500mW

Repetitionrate:100Hz

125nS

Mic4452BM

450

50Ohmsprobe

V

ds

90%

10%

Vgs

t

d(off)

t

r(v)

t

t

d(on)

f(v)

SwitchingTimeWaveforms

Figure8.ClampedInductiveloadtestdiagramandswitchingwaveform

4

/

IRF7811AVPbF

SO-8PackageOutline

Dimensionsareshowninmillimeters(inches)

SO-8PartMarking

5

/

IRF7811AVPbF

SO-8TapeandReel

TERMINALNUMBER1

12.3(.484)

11.7(.461)

8.1(.318)

7.9(.312)