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半导体光电子学的新进展

RecentProgressonSemiconductorBased

Opto-electronicDevices罗毅YiLUO集成光电子国家重点实验室清华大学

电子工程系StateKeyLabonIntegratedOptoelectronicsDept.ofElectronicEngineering,TsinghuaUniversity2023/5/11BackgroundTheDemandforMoreBandwidth Internet,multimediacommunications,andetcMethodstoIncreaseSystemCapacity WDM(Wavelength-DivisionMultiplexing) OTDM(OpticalTime-DivisionMultiplexing)BenefitsofWDMtechniques FlexibilityandscalabilityforavarietyofnetworkarchitecturesWDMtechniquesarethebackboneofmodernopticalfibernetworks2023/5/12StateKeyLabonIntegratedOptoelectronics2023/5/13StateKeyLabonIntegratedOptoelectronics2023/5/14StateKeyLabonIntegratedOptoelectronicsKeyDevicesforWDMOpticalFiberNetworkSystemsLightSourcesLow-costuncooledLDsDirectlymodulatedLDsModulatorintegratedDFBLDsWavelengthtunable/selectableLDsHigh-SpeedPhotodetectorsSOAandWavelengthConverterAWGandRelated2023/5/15StateKeyLabonIntegratedOptoelectronics2023/5/16StateKeyLabonIntegratedOptoelectronicsLow-CostUncooledLDsApplicationsAccessnetworkMetropolitantransmissionBitrate:155MB/s(FP-LDs)~10Gb/s(DFB-LDs)Requirements

WidetemperaturerangeoperationCost-effectivestructurefordevicefabricationHighefficiencyandlargetoleranceforcouplingoutputlightintoasinglemodefiber2023/5/17StateKeyLabonIntegratedOptoelectronicsUncooledGain-CoupledDFBLDsStablesinglemodeoperationfrom-40to85C

Integratedbeam-expanderforimprovedcouplingtoleranceGain-coupledDFBlaserswithcurrent-blockinggratings2023/5/18StateKeyLabonIntegratedOptoelectronicsDirectlyModulatedDFBLDsApplicationsGigabitEthernetMetropolitantransmissionBitrate:upto10Gb/sWavelength:1.3m&1.55mLimitationsLimitedtransmissionspan(<20km)duetolargelinewidthenhancementfactor(>4)

Modulationspeedislimitedbycarrierrelaxationoscillation2023/5/19StateKeyLabonIntegratedOptoelectronics10Gb/sDirectlyModulatedDFBLDsfor

MetropolitanDataTransmissionSmall-signalRFResponseBERCharacteristics2023/5/110StateKeyLabonIntegratedOptoelectronicsEAModulatorIntegratedDFBLDsApplicationsTrunklinetransmissionBitrate:2.5Gb/s~40Gb/sAdvantagesCompactsizeLowcouplinglossLowfrequencychirpingReducedcostImprovedreliability2023/5/111StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsforTrunkLineCommunicationsTransmissionlength:100kmFeature:Lowpowerpenalty(<1.5dB)&Widebandwidth(~14GHz)2023/5/112StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsEyeDiagramBERPerformance2023/5/113StateKeyLabonIntegratedOptoelectronicsWavelengthTunable/SelectableLDsAdvantagesAbilitytorestorefailedchannelsReducedtransmittercostIncreasedflexibilityforfuturenetworkmanagingWavelengthTunablevs.WavelengthSelectableWavelengthTunableLDs:BasedonDBRstructures

Compactdevicestructure Poorreliability&ElectriccrosstalkathighfrequencyWavelengthSelectableLDs:BasedonDFBLDarrays Relativelycomplicateddevicestructure

Improvedreliabilityandwavelengthstability2023/5/114StateKeyLabonIntegratedOptoelectronicsMulti-rangeWavelengthSelectableLDsForuseinback-up&add-dropinDWDMphotonicnetworkDFB-LDsintegratedwithMMIcoupler,SOA,andEAmodulatorCompactsize(400m2840m)2023/5/115StateKeyLabonIntegratedOptoelectronicsMulti-RangeWavelengthSelectableLDArraysforDWDMSystems15nm/chipwavelengthselectablerangeWavelength&ThresholdcurrentLasingSpectra2023/5/116StateKeyLabonIntegratedOptoelectronicsHigh-SpeedPhotodetectorsConventionalConfigurationsSurfaceilluminatedp-i-nphotodetectorAvalanchephotodetector(APD)Limitations

LimitedbandwidthforAPDdetectorsTrade-offbetweenbandwidthandefficiencyforsurfaceilluminatedp-i-ndetectorsCurrentTrendSideilluminatedstructureWaveguidep-i-nphotodiodes2023/5/117StateKeyLabonIntegratedOptoelectronicsWidebandWaveguidePhotodiode

for40Gb/sSystemsMonolithicreceivercomposedofmultimodewaveguidep-i-nphotodiodeandaHEMTdistributedamplifier2023/5/118StateKeyLabonIntegratedOptoelectronicsMonolithicReceiverOEICModule

for40Gb/sSystemsBERofReceiverOEICEye

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