版权说明:本文档由用户提供并上传,收益归属内容提供方,若内容存在侵权,请进行举报或认领
文档简介
MagneticPropertiesofMaterialsI,MagnetizationCurvesFig.MPAa)isthecurveintheabsenceofanymaterial:avacuum.Thegradientofthecurveis4π.10-7whichcorrespondstothefundamentalphysicalconstantμ0.magneticfluxdensity:(A/m,Gs)B=μ0(H+M).M=χmHB=μH=μ0(1+χm)H
,μr=μ/
μ0II,MagneticmomentTheconceptofmagneticmomentisthestartingpointwhendiscussingthebehaviourofmagneticmaterialswithinafield.Ifyouplaceabarmagnetinafieldthenitwillexperienceatorqueormomenttendingtoalignitsaxisinthedirectionofthefield.Acompassneedlebehavesthesame.Thistorqueincreaseswiththestrengthofthepolesandtheirdistanceapart.Sothevalueofmagneticmomenttellsyou,ineffect,'howbigamagnet'youhave.Itisalsowellknownthatacurrentcarryingloopinafieldalsoexperiencesatorque(electricmotorsrelyonthiseffect).Herethetorque,τ,increaseswiththecurrent,i,andtheareaoftheloop,A.θistheanglemadebetweentheaxisoftheloopnormaltoitsplaneandthefielddirection.
τ=
B×i×A×sinθ
τ=B×m×sinθIV,FerromagneticmaterialsThemostimportantclassofmagneticmaterialsistheferromagnets:iron,nickel,cobaltandmanganese,ortheircompounds(andafewmoreexoticonesaswell).Themagnetizationcurvelooksverydifferenttothatofadiamagneticorparamagneticmaterial.V,HysteresisloopMemorydevices1MagneticMemory
Mechanism:MainapplicationsTapeDisketteMagneticdrumMagneticMemorymaterials:-Fe2O3,CrO2,Fe-CoetalRead/writeheads2OpticalMemoryDVD-RWDVDCDApplications:Opticalstoragematerials:PC、PMMA、Epoxyetal.Mechanism:Advantage:lowprice,highstoragedensity;disadvantagelowaccess,largeboxMainapplication:3SemiconductormemoryBasedonsemiconductordevices;Advantage:fastaccess,highdatastorage,lowpower;CachememoryStackedmemoryFlashmemorySemiconductormemoriesCellarrayPeripheralcircuitI/Ounitcircuit
2m+n+k-1CategoriesofSemiconductormemoriesMemorytechnologiesPrimarycategoriesofelectricalmemory:RAM,ROMandFlashNonvolatile:
aftertransitionfromOFFstatetoONstate,deviceremainedinthisstateevenafterturningoffthepower.
Randomaccessmemory(RAM):Trmationislostwhenthepowerremovedfromthedevice.(DRAM,SRAM)Readonlymemory(ROM):Informationisnotlostwhenthepowerisswitchedoff,butthechargestoredinchipcan’tberefreshed.Flash:Thechargecanberefreshedfrequently,andinformationisnotlostwhenthepowerisswitchedoff.
DRAMwriteandreadoperationwritereadROM
MaskROMPROMEPROMEEPROM(Flash)Flash
DielectricTunneloxideMOSFET+FloatingGateThresholdshiftduetotheelectricchargeFlashwrite/erase/readoperationApplyvoltagetocontrolgate(CG)e-tunnelingoccursfromchanneltoFGApplyvoltagetosourcee-transferoccursfromFGtosourceApplyvoltagetoCG.Ife-
presentinFG,noconductionbetweenSandD.Ife-isabsent,conductionhappens.NAND&NORFlashNANDFlash:erasedandprogrammedblock-wise.NORFlash:erasedandprogrammedbyte-wise.PerformanceandrequirementsFastaccessNon-volatilityUnlimitedR/WcyclesLowpowerWidetemperaturerangeLowcostFerroelectricunitHysteresiscurveTwostatesofpolarizationunderappliedfieldcancorrespondtoastored“0”or“1”RemnantpolarizationCoercivefieldFerroelectricmemory(FeRAM)FeRAM(capacitor)Plateline(PL)hasavariablevoltageleveltoenabletheswitchingofthepolarizationoftheferroelectriccapacitor.1T-1CFeRAMoperationTowrite“1”inthecell,BLissettoVDDandPLisgrounded,thenapulseisappliedtoactivatethecelltransistor.Towrite“o”,accomplishedinthesamemannerbutPLandBLareexchangedtoreversethepolarizationofFerroelectriccapacitor.Read:firstBLisgrounded,thenitismadefloating.AfterthecellisselectedbyWL,thePLvoltageisraisedfromGNDtoVDD,raisedvoltageofBLisdependentofthepolarization(data)storedinFeCAP.Electricalbistability:OrganicelectricbistabledevicesAphenomenonexhibittwokindsofdifferentstableconductivestatebyapplyingappropriatevoltage.
TypicalI-VcharacteristicsSiliconmemory:encode“0”and“1”astheamountofchargestoredindevicecell
Organicmemory:storedatebasedonhigh&lowconductivityresponsetoappliedvoltageDevicestructuresCross-BarsShadowmaskDeviceconfigurationsPolyanilinenanofiberGoldnanoparticlesOrganic/nanoparticlessystemMetalcomplex
DonorAcceptorDonor-AcceptorsystemPerformanceandCharacterization
ON/OFFcurrentratioWrite-read-erasecyclesSwitchingtimeRetentionabilityNano-crystalfloating-gatememoryOxidegatetoothinLeakagepathCauseelectronstoredtoleakoutHowtoalleviatethescalinglimitation?
usethinnertunneloxideswithoutsacrificingnonvolatility
oxidethicknessoperatingvoltageoperatingspeedsDielectricTunneloxidePhasechangememoryChangethephasetocrystalline(setorconductive)andamorphous(res
温馨提示
- 1. 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。图纸软件为CAD,CAXA,PROE,UG,SolidWorks等.压缩文件请下载最新的WinRAR软件解压。
- 2. 本站的文档不包含任何第三方提供的附件图纸等,如果需要附件,请联系上传者。文件的所有权益归上传用户所有。
- 3. 本站RAR压缩包中若带图纸,网页内容里面会有图纸预览,若没有图纸预览就没有图纸。
- 4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
- 5. 人人文库网仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对用户上传分享的文档内容本身不做任何修改或编辑,并不能对任何下载内容负责。
- 6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
- 7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。
最新文档
- 宿舍考勤系统课程设计
- 《喘息服务介入自闭症儿童母亲亲职压力缓解的应用研究》
- 《临床医学专业学位研究生职业胜任力评价体系研究》
- 《A外企服务公司人力资源外包服务研究》
- 《PD认知特征与中医证候相关性及抗震止痉胶囊治疗血瘀风动型PD-MCI患者的临床研究》
- 撰写数学微课程设计
- 中国文化产业的创新发展路径探索
- 文化旅游产业发展规划及实施方案研究报告
- 初三语文中考复习计划
- 小班消费课程设计分析
- 2024年秋儿童发展问题的咨询与辅导终考期末大作业案例分析1-5答案
- 电力工程起重吊装施工方案
- 高等传热学全册课件
- 人工智能原理与方法智慧树知到期末考试答案章节答案2024年哈尔滨工程大学
- 服务外包公司评价表(共1页)
- 高等数学D7_5可降阶高阶微分方程
- 一年级数学月考试卷分析
- 污水管网工程监理实施细则
- 辣椒介绍PPT课件
- 个人不良贷款清收案例3篇
- RCA成果报告书(2021参考模版)10docx
评论
0/150
提交评论