IRF540中文数据手册

1、IRF540 N沟道MOS管特性Thrench工艺低的导通内阻快速开关低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。IRF540S中提供的是SOT404(D PAK)表面安装的包裹。管脚管脚描述1Gate2Drain3SourceTabDrain极限值系统绝对最大值依照限制值符号参数条件最小值最大值单位V_DSSV_DGRV_GSI_DI_DMP_DTj，Tsig漏源极电压漏门极电压门源极电压连续漏电流脉冲漏电流总功耗操作点和存储温度Tj= 25 C to 175CT

2、j = 25 C to 175C; RGS = 20 kTmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C-5510010020231692100175VVVAAAW雪崩能量极限值符号参数条件最小值最大值单位非重复性雪崩能量最大非重复性雪崩电流Unclamped inductive load, IAS = 10 A; tp = 350 s; Tj prior to avalanche = 25C;VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14-23023mJA

3、热敏电阻符号参数条件最小值典型值最大值单位安装底座交界处的热阻周围环境热阻SOT78封装，自由空间SOT404封装，PCB上-60501.5-K/WK/WK/W电特性25 除非另有说明符号参数条件最小值典型值最大值单位漏源极崩溃电压门阀电压漏源极导通电阻向前跨导门源极泄漏电流0门极电压漏电流=0V；=0.25mATj = -55C = ; ID = 1 mATj = 175CTj = -55C = 10 V; ID = 17 ATj = 175C=25V; =17A=20 V;=0VVDS = 100 V; VGS = 0 VVDS=80V;VGS=0V;Tj= 175C1008921-8.7

4、-3-4913215.5100.05-4-677193-10010250VVVVVmmSnAuAuA总共门极电荷门源极电荷门漏极电荷ID = 17 AVDD = 80 V; VGS = 10 V-651029nCnCnC开启延迟时间开启上沿时间关闭延迟时间关闭下沿时间 = 50 V; = 2.2 ; = 10 V; = 5.6 Resistive load-8392624-nsnsnsns内部漏电感内部漏电感内部源极电感Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package o

5、nly)Measured from source lead to source bond pad-3.54.57.5-nHnHnH输入电容输出电容反馈电容 = 0 V; = 25 V; f = 1 MHz-890139831187167109pFpFpF反向二极管极限值及特性符号参数条件最小值典型值最大值单位连续源极电流脉冲源极电流二极管正向电压=28A；=0V-0.9423921.5AAV反向恢复之间反向恢复命令=17A；=0V;-d/dt=100A/us;=25V-61200-nsnC底座温度-自然功率降低百分比图1：自然功率损耗底座温度-漏电流降低百分比图2 ：自然持续漏电流漏源极电压-脉冲漏极电流峰值图3 ：安全操作区域脉宽-瞬态热阻抗图4：瞬态热阻抗漏源极电压-漏极电流图5：典型输出特性漏极电流-漏源极导通阻抗图6：典型导通阻抗图7：典型传递特性图