GB/T 44924-2024半导体集成电路射频发射器/接收器测试方法

ICS31.200

CCSL56

中华人民共和国国家标准

GB/T44924—2024

半导体集成电路

射频发射器/接收器测试方法

Semiconductorintegratedcircuits—

MeasuringmethodsforRFtransmitter/receiver

2024⁃12⁃31发布2025⁃04⁃01实施

国家市场监督管理总局

国家标准化管理委员会发布

GB/T44924—2024

目次

前言··························································································································Ⅲ

1范围·······················································································································1

2规范性引用文件········································································································1

3术语和定义··············································································································1

4一般要求·················································································································4

4.1总则·················································································································4

4.2环境要求···········································································································4

4.3测试条件···········································································································4

4.4测试系统及仪器设备····························································································4

4.5测试注意事项·····································································································5

5详细要求·················································································································5

5.1mW5

动态功耗P（a）································································································

5.2dB6

功率增益G（P）·································································································

5.3ΔdB10

功率增益平坦度G（P）····················································································

5.4dB11

线性功率增益GPLIN（）·······················································································

5.5ΔdB11

线性功率增益平坦度GPLIN（）···········································································

5.6dBm12

输出功率P（o）·····························································································

5.7dBm13

抗烧毁功率PKSH（）························································································

5.8效率η（%）········································································································14

5.9功率增益可调范围GR（dB）··················································································15

5.10dBc16

镜像抑制比RIMJ（）························································································

5.11dBc17

谐波抑制比RHR（）························································································

5.12dBc18

本振抑制比RLO（）························································································

5.13dBc19

边带抑制比RSB（）·························································································

5.14dB20

杂散抑制比RFS（）··························································································

5.15PNdBdBm21

_压缩点CP⁃N（）··················································································

5.16输出二阶互调截止点OIP2（dBm）·········································································23

5.17输入二阶互调截止点IIP2（dBm）··········································································26

5.18输出三阶互调截止点OIP3（dBm）·········································································26

5.19输入三阶互调截止点IIP3（dBm）··········································································28

5.20ns29

通道建立时间tON（）·························································································

5.21ns30

通道关断时间tOFF（）························································································

5.2231

收发切换时间tTR······························································································

Ⅰ

GB/T44924—2024

5.23噪声系数NF（dB）·····························································································34

5.24端口回波损耗RL（dB）/电压驻波比VSWR·····························································37

5.25端口阻抗Z（Ω）·································································································40

5.26ns41

群时延tGD（）··································································································

5.27带内相位非线性PNL（°）·····················································································42

5.28dBm/Hz43

噪声基底NFL（）·····················································································

5.29本振泄漏LOL（dBm）························································································44

5.30∆dB45

幅度稳定度AP（o）·······················································································

5.31相位稳定度Δθ（°）·····························································································46

5.32°47

通道间相位一致性PSER（）··················································································

5.33dB50

通道间幅度一致性AMER（）··············································································

5.34I/Q°51

相位误差PEIQ（）························································································

5.35I/QdB53

幅度误差AEIQ（）·····················································································

5.36调制精度EVM（%）···························································································54

5.37邻信道功率抑制比ACPR（dB）·············································································55

5.38dB56

通道隔离度KISO（）·························································································

5.39载波泄露CL（dB）·····························································································58

Ⅱ

GB/T44924—2024

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由中华人民共和国工业和信息化部提出。

本文件由全国集成电路标准化技术委员会（SAC/TC599）归口。

本文件起草单位：中国电子科技集团公司第二十四研究所、重庆西南集成电路设计有限责任公司、

中国电子科技集团公司第十四研究所、中国电子科技集团公司第三十八研究所、成都振芯科技股份有

限公司、深圳市晶峰晶体科技有限公司。

本文件主要起草人：苏良勇、王露、唐景磊、阳润、戚园、刘丹、许娟、苏巧、陈翔、刘晓政、范超、高青。

Ⅲ