meeting slides current sensingthermal limitti电流感应热限制

LiqiZhang,PengkunLiu

Nov3,2015IntelligentPowerModule(IPM)IntegratedIPMObjectiveFurtherdeveloptheSiCmoduletoenhanceitsrealtimemonitoringandprotectioncapabilityandenableultracompactsystemdesignPotentialesIPMwithintegratesensingandprotection,andotherfunctionsintotheIPMIdentifyICchipopportunityforTIdriverunitintoTIgatePlanStudyonlinejunctiontemperaturesensingandprotectiontechniques.Studyfastandaccuratecurrentsensingandprotectiontechniques.Investigatesensitivity,toleranceoftheabovesensingandprotectiontechniques.Studysignalandpowertransfertechniquesusingtransformer.GateDriverRGateDriverHighBandwidthCurrentSensorOver-temperatureProtectionDigitalIsolatorIsolatedPowerIsolatedPowerOver-currentProtectionTemperatureSensorFeaturesHighlevelintegrationwithlowparasiticSimpledigitaluserinterfaceOnlinejunctiontemperaturesensorOnlinehighbandwidthcurrentsensorProtectionenhancesreliabilityContentCurrentSensingMotivationandRequirementRds(on)-TemperatureCurveCalibrationBasicFunctionDoublePulseTestTheoreticaltemperaturelimitfortheintegratedmoduleSiCMOSFETwithintegratedcurrentsenseFETEnhancementParalleledcurrentsenseFETisintegratedintochip.Data1.2kV,3.7mΩRon,spCurrentratiowithin10%changeSafeturn-offoprationLackofproductions?MitsubishiElectricCorporationFurukawa,A.,S.Kinouchi,H.Nakatake,Y.Ebiike,Y.Kagawa,N.Miura,Y.Nakao,M.Imaizumi,H.Sumitani,andT.Oomori.“Lowon-Resistance1.2kV4H-SiCMOSFETsIntegratedwithCurrentSensor.”In2011IEEE23rdInternationalSymposiumonPowerSemiconductorDevicesandICs(ISPSD),288–91,2011.doi:10.1109/ISPSD.2011.5890847.MOSFETRds(on)CurrentSensingMethodologyUseaparalleledMOSFETtodivideasensecurrentwhichhascertainratiowiththemaincurrent.SensethecurrentwhenmainMOSFETisonandblockthehighvoltagewhenit’soff.Anextragateresisteranddiodeareneededtoensurethecorrectswitch.ImprovementNoseriesvoltageinfluenceVerylittlelossHaspotentialtobeintegratedintodriverAnalysis

ISIMSenseSiMOSFETMainSiCMOSFETRS+-VsCouldbeintegratedAmpDriverRds(on)-TemperatureCurveCalibrationSetupUsecurvetracertocalibratetherelationshipbetweenRds(on)andtemperatureforsiliconandSiCdevice.HeaterThermocoupleTesterRDS(on)CalibrationRds(on)-TemperatureCurveCalibrationResultK,dataK,testCREE80mΩ110mΩ230298IXYS60Ω53.5Ω150145

NormalizedCurvefromDatasheetBasicFunctionDouble-PulseTestSetupVgs:-4V~20VInductor:60uHRg:0ΩVin:10V–50VRs:10Ω–1kΩPulseGeneratorDCinputCapInductorInputSourceDriverDevicesandSenseResistorSenseSiMOSFETMainSiCMOSFETRSDriver+-VsVinLDiodeBasicFunctionDouble-PulseTestResultRs:51Ω;Vin:50V.Over/undershootofsensesignaliscausedbyturnon/offcurrentandlargeparasitics.11us8usVgsVdsVsILExampleofWaveformResultforDouble-PulseTestBasicFunctionDouble-PulseTestResult:DifferentInputVoltageRs:100Ω;Vin:10V,20V,30V,40V,50V.Vin/VRatioTheoreticvalueBasicFunctionDouble-PulseTestResult:DifferentSensingResistorVin:50V;Rs:10Ω,51Ω,100Ω,200Ω,510Ω,1000Ω.HigherRsleadstohigherresolutionofthesensingsignal.Rs/Ω10511002005101000TheoreticRatio8751387.520003250712513250TestRatio1489175521473962800015964RelativeDifference70.2%26.5%7.4%21.9%12.3%20.5%TheoreticalthermalrunawaylimitMotivationKnowtheTjlimitofthedeviceforonlineTjprotectionRon=resistanceofauniformlydopedN-type4H-SiCepitaxiallayerSheng,Kuang.“MaximumJunctionTemperaturesofSiCPowerDevices.”IEEETransactionsonElectronDevices56,no.2(February2009):337–42.doi:10.1109/TED.2008.2010605.Deadtimelossisnotincludedhere.ParametersValuesFrequency1MHzDutycycle0.5Eoff0(I<Icritical)I×2uJ(I>Icritical)Tamb25CTheta(j-a)4.86C/WRds,on80mohmThermalstableequationUnitisKTheoreticalthermalrunawaylimitThermalstableequationFittingthecurvewithexperimentaldata,andtherelationcanbeshownas:Sheng,Kuang.“MaximumJunctionTemperaturesofSiCPowerDevices.”IEEETransactionsonElectronDevices56,no.2(February2009):337–42.doi:10.1109/TED