常见薄膜材料参数

常见薄膜材料参数摘自《光学薄膜技术》卢进军、刘卫国编著材料熔点(°C)蒸发温度(C)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区“m膜结构聚集密度P牢因度(3)备注AgBr434B6.472.25(0.55u)3AgCI455790B(Mo)5.562.07(0.55》)2.02(1um0.4~30S1AS2S3300246B(Mo,Ta)S3.432.47(1.06|j)2.37(10u)8x10-3(1.08》)0.58~10无定形M1毒性As2Se3B(Mo,Ta)2.82(3.8|j)3x10-3(3.8》)无定形M2毒性AI2O320202100B(W)E3.981.54(0.55|J,40°C)1.62(0.55|J,300°C)2.3x10-3(0.515》)8x10-3(1.06》)0.2~8无定形p=1.0AIF3900B1.38(0.55p)0.2~>30无定形P=0.64(35°C)ST小Bi2O3860P(Pt)8.32.45(0.55u)0.4~FH1BiF3727B(C)5.321.74(1p)8x10-4(10.6》)0.26~20结晶MC,1BaF21280B4.831.47(1p)1.4(8p)1.395(10u)5x10-4(10.6》)0.25~15结晶P=0.91(20°C)M,T小,2b2o3450B(Pt,Mo)2.461.61T小BeO25302230B(W)E3.011.72~1.73H毒性CaF213601280B(W,Ta,Mo)3.21.23~1.46(0.55p)0.5~12结晶p=0.57FH,T小,1CeF314601350B(W)E6.161.63(0.55|J,300°C)A=2.588,B=0.1934(300°C)1.4x10-5(0.633》)0.3~5结晶P=0.8(30°C)FH,T大,1CdS1750800B(Pt,Ta)4.82.53(0.6|J,30°C)A=5.235,B=0.18192.9x10-3(0.515》)0.55~7结晶SCCdTe1041B(Mo)6.23.05(1|j)2.66(10u)0.93~30^▲,2CeO319501600B(W)E7.132.2(0.55|J,30°C)2.38(0.55》,250°C)A=3.621,B=0.171120.4~12结晶HC,1CdSe1350700B(W)5.813.5(1》)0.97~M,厶2

材料熔点(°C)蒸发温度(C)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区“m膜结构聚集密度P牢因度(3)备注CaBr636B(W,Mo)3.041.8(25|j)1.67(3.3|j)0.23~40SCal626B4.511.787(0.55u)0.25~60S3Cr2O322751900B(W)E5.22.1(0.63口)FH1C(金刚石)37002601E3.52.38(4|j)A=5.654,B=0.0565F1Dy2O32340E2.0(0.29|j,350°C)1.91(0.55口，350C)0.28~FH1Eu2O32050E1.88(0.7u,350°C)0.3~FH1Fe2O31565E5.12.72(0.55口)0.11(0.55口)0.8~M1Ge9591690B(C)E5.34.4(2p)A=15.992,B=1.87931.7~23无定形(300°C)^▲,T大,1GaAs1338850E5.343.2(u)0.9~18无定形M2Gd2O323402200RSE1.8(0.55口)0.32~15FH1HfO2ERS2.15(0.25p)A=3.1824,B0.091882x10-3(0.25p)7x10-4(0.3u)0.22-12H,Ho2O32365E2.0(0.5u,350°C)0.25~FH1InAs943双源5.664.53.8~7S1InSb535双源5.774.37~16SIn2O3R(W)E7.182.0(0.5口)0.32~H1LiF870B(Mo,Ta)2.61.36(0.5p)A=1.8837,B=0.0071x10-3(0.24》)0.11~7结晶S,▲▲▲,T小,3LaF31490B(W,Mo)6.01.55(0.55p)1.65(0.55|j,300°C)A=2.5246,B=0.012471x10-3(0.25》)0.2~10结晶P=0.8(30°C)FH,▲▲▲,1La2O320001500B(W)E6.51.98(0.3p)1.88(0.55p)A=3.3087,B=0.069521x10-3(0.25》)0.3无定形F1 1MgF212661540B(W,Ta,Mo)2.91.38(0.55p)A=1.8976,B=0.015369x10-6(0.5》)6x10-6(1》)0.11~6结晶P=0.72(30°C)H,▲▲▲,T大,1MgO28002600B(W,Ta)E3.581.7(O.55|J,5O°C)2x10-3(0.24》)0.2~8结晶H,大,2

材料熔点(°C)蒸发温度(C)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区“m膜结构聚集密度P牢因度(3)备注NiO20901580B(AI2O3)6.72.159x10-3(0.24》)0.2~14FH1NaF992988B(Mo)2.81.29〜1.3(0.55|j)结晶P=0.96(30°C)S,Na3AlF610001000B(Mo,Ta)2.91.32〜1.35(0.55|j)7x10-3(0.24》)0.2~14结晶晶P=0.88(30°C)P=0.892(190°C)S,▲.T小,3Nd2O318001900B(W,To)E7.21.79(O.55|J,3O°C)2.05(0.55u,260°C)0.24~10H1NdF314101400B(Ta,To)1.61(0.55|j,300°C)A=2.5582,B=0.017030.22~6结晶P=0.8(30°C)M2PbTe971850B(Ta)8.165.6(5u)3.4~30S,・1PbCI2501B(Pt,Mo)5.812.3(0.5p)2.0(10口)0.3~14M,T小,3PbF3882850B(W,Pt)7.761.98(0.3|j,30°C)1.75(0.55u,30°C)7x10-3(3.8》)0.24~20BPbf3p=0.8(30C)S/,T,2PbO900300B(Pt)9.52.6(0.55u)0.53~结晶S2PbS1112675B(W)7.53.9~4.23~7S2Pb^Oii2200B(W)1.92〜2.05(0.55》)0.4~10无定形FH1Se1430437B(W,Ta,Mo)4.32.45(2u)0.8~20FH3Sb2S3550370B(Ta,Mo)4.13.0(0.55》)0.5~10S22 3SnO31127B(W)E6.952.0~2.1(0.55p)0.4~p=0.95热处理H,T小,1Si14201500E2.333.4(3》)A=11.586,B=0.93981.7x10-4(2.7》)1~9无定形FH,▲.C大,1SiO1700130B(To,Ta,W)2.241.55(0.55》,30°C)主要成分Si2O30.4~9无定形H,▲▲,C,1SiO217001600E2.11.55(0.55》,30°C)7.7x10-4(0.35》)2x10-4(1》)0.2~9无定形P=0.9(30°C)P=0.98(150°C)H,▲▲▲,C,1SrO21190B(Mo,W)4.241.45(0.55》)0.2~10结晶P=0.89(30°C)M2Sm2O32350E1.88(0.59》,300°C)0.34~FH123Te452B(Ta)6.24.9(6u)3.4~20FH3TICI430B(Ta)7.02.6(12u)0.4~30S3

材料熔点(°C)蒸发温度(C)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区“m膜结构聚集密度P牢因度(3)备注TiO218502000RE3.8~4.31.9(0.55p,30°C)2.3(0.55p,20°C)A=4.385,B=0.24147.5x10-4(0.5p)2.5x10-4(1p)0.4~10无定形(30°C)结晶(>100°C)H,▲▲,C,1Ta2O518002100RE7.82.16(0.55p,250°C)A=4.2446,B=0.131588x10-3(0.3p)1x10-3(0.6p)0.35~10无定形FH,厶1眄1100B(Ta,Mo)6.321.5(0.55p,35°C)1.35(10.6p)5x10-4(0.5p)2x10-3(1p)1x10-4(10.6p)0.2~15无定形▲,T,1ThiO229503050E9.691.86(0.55m,250°C)5x10-4(0.24p)0.3~6无定形H,厶1丫叮1380B4.011.455x10-4(0.24p)0.2~14S,l,2yb2o323461900E1.75(0.63p,30°C)0.28~PH1ZnO1100B(w,Mo)2.1(0.45p)0.35~S1ZnS19001100B(Ta,Mo)2.1(0.55p)2.16(0.6p)A=5.013,B=0.20252.7x10-4(0.55p)4x10-8(1p)2x10-4(10.6p)0.4~14结晶20.94M,▲,C,1ZnSe1530950B(Mo,Ta)5.422.58(0.533p)2.42(10.6p)3.4x10-8(0.5p)1x10-4(10.6p)0.55~15结晶S2ZnTe1000B2.8(0.556.7x10-8(0.515p)结晶S3ZrO227152700E5.491.97(0.55p,30°C)2.05(0.55p,200°C)A=3.291,B=0.097126x10-8(0.25p)1.6x10-4(0.5p)0.3~12P=0.67(30°C)P=0.821(25°C)H,▲,T,1注：B—电阻加热，E—电子束烝发，R—反应烝发，S 溅射，RS—反应溅射括号内数字为波长和衬底温度，A、B是Sellmeir色散方程系数，波长单位pmBSelmeir色散公式：n2=A+一九2硬度，H 极硬，FH 硬，M 中等，S 软；抗激光损伤：▲▲▲---强，▲▲ 中，▲ 弱；应力：张应力 T，C 压应力；抗潮性：1 优，2 中，3 差。：

几种半导体材料的光学力学热学性能(10・6“m波长光)摘自有色金属研究院发表的文章材料波段ndn/dT(10-6°C)吸收系数a密 度(g/cm3)膨胀系数(10-6°C)热导率(W/mK)熔点(°C)Ge1.8-254.04002.0x10-