α-FeSe-x块材及硒化薄膜的制备及性能研究

α-FeSe_x块材及硒化薄膜的制备及性能研究α-FeSe_x块材及硒化薄膜的制备及性能研究

摘要：

本文研究了α-FeSe_x块材及硒化薄膜的制备及其在光电器件中的潜在应用。制备过程中采用了化学气相沉积法和物理汽相沉积法，并对样品进行了表征和性能测试。结果表明，在一定反应条件下，化学气相沉积法可以得到高质量的α-FeSe_x硒化物薄膜。此外，通过物理汽相沉积法制备的α-FeSe_x块材也具有优异的电学性能。对于制备的薄膜和块材，我们进行了X射线衍射、扫描电镜、透射电镜及光电性质测试。结果表明，制备的样品具有良好的结晶性、致密性和光电性能。这些性质为α-FeSe_x在光电器件领域的应用提供了基础。

关键词：α-FeSe_x，化学气相沉积法，物理汽相沉积法，块材，硒化薄膜，光电器件

Abstract:

Thepreparationandpotentialapplicationofα-FeSe_xbulkmaterialsandselenidesfilmsinoptoelectronicdeviceswereinvestigatedinthispaper.Chemicalvapordeposition(CVD)andphysicalvapordeposition(PVD)wereusedtopreparethesamples,andthesampleswerecharacterizedandtheirpropertiesweretested.Theresultsshowthathigh-qualityα-FeSe_xselenidefilmscanbeobtainedbyCVDundercertainreactionconditions.Inaddition,α-FeSe_xbulkmaterialspreparedbyPVDalsohaveexcellentelectricalproperties.TheX-raydiffraction,scanningelectronmicroscopy,transmissionelectronmicroscopyandoptoelectronicpropertiestestswerecarriedoutforthepreparedfilmsandbulkmaterials.Theresultsshowthatthepreparedsampleshavegoodcrystallinity,densityandoptoelectronicproperties,providingabasisfortheapplicationofα-FeSe_xinoptoelectronicdevices.

Keywords:α-FeSe_x,chemicalvapordeposition,physicalvapordeposition,bulkmaterials,selenidefilms,optoelectronicdevicesThestudyaimedtoprepareandcharacterizealpha-FeSe_xselenidefilmsandbulkmaterialsusingchemicalvapordepositionandphysicalvapordepositiontechniques.ThepreparedsamplesunderwentseveraltestssuchasX-raydiffraction,scanningelectronmicroscopy,transmissionelectronmicroscopy,andoptoelectronicpropertiestests.Theresultsshowedthatthesampleshavegoodcrystallinity,density,andoptoelectronicproperties,makingthemsuitableforpotentialapplicationsinoptoelectronicdevices.

Chemicalvapordepositionandphysicalvapordepositionarereliabletechniquesforproducinghigh-qualityalpha-FeSe_xselenidefilmsandbulkmaterials.TheX-raydiffractionresultsrevealedthatthepreparedsampleshadgoodcrystallinity,meaningthattheyhaveawell-definedcrystallatticestructure.Thisisadvantageousforoptoelectronicapplicationsasthesamplescanexhibitspecificelectricalandopticalproperties.

Scanningelectronmicroscopyandtransmissionelectronmicroscopywereusedtoinvestigatethesurfacemorphologyofthesamples.Theimagesobtainedshowedthatthesampleshadasmoothsurfaceandthepresenceofgrains.Theuniformityofthefilmsisessentialforthereproducibilityoftheresults.

Optoelectronicpropertiestestswereusedtodeterminetheelectricalandopticalpropertiesofthesamples.Theresultsshowedthatthepreparedsampleshadgoodelectricalconductivityandexhibitedphotoconductivebehaviorunderlightexposure,makingthemsuitableforoptoelectronicdevices.

Inconclusion,thepreparationandcharacterizationofalpha-FeSe_xselenidefilmsandbulkmaterialsusingchemicalvapordepositionandphysicalvapordepositiontechniquesyieldedgoodresults.Thepreparedsampleshadgoodcrystallinity,density,andoptoelectronicproperties,makingthempotentialcandidatesforoptoelectronicdeviceapplicationsTofurtherimprovethepropertiesofalpha-FeSe_xmaterials,variousstrategiescanbeemployed.Onepossibleapproachistoexploredifferentdopingmethodstomodifytheelectronicandstructuralpropertiesofthematerials.Forexample,dopingwithalkalimetalssuchaspotassiumorrubidiumhasbeenshowntosignificantlyenhancesuperconductivityinFeSe-basedmaterials.Anotherapproachistoinvestigatenewsynthesisroutessuchassolvothermal,hydrothermalormicrowave-assistedmethodstocontrolthemorphologyandcrystalstructureofthematerials.

Anotherinterestingdirectionistoinvestigatethepotentialofalpha-FeSe_xmaterialsinenergystorageapplications.Recentresearchhasshownthatalpha-FeSe_xcanbeusedasananodematerialinlithium-ionbatteries,exhibitinghighspecificcapacityandexcellentcyclingstability.Inaddition,FeSe-basedmaterialshavealsobeeninvestigatedaselectrodematerialsforsupercapacitors,showingpromisingelectrochemicalperformance.

Insummary,alpha-FeSe_xselenidematerialshavereceivedsignificantattentionduetotheirintriguingphysicalpropertiesandpotentialapplications.ThecombinationofdifferentsynthesisandcharacterizationtechniquescanhelptofurtherexplorethepropertiesofthesematerialsandpavethewaytowardstheirpracticalapplicationsinvariousfieldsincludingoptoelectronicsandenergystorageInrecentyears,alpha-FeSe_xselenidematerialshavegainedsignificantinterestduetotheirpromisingpropertiesandpotentialapplicationsinvariousfields.Oneofthepotentialapplicationsisinthefieldofoptoelectronics.Thesematerialsexhibitexcellentphotoconductivity,whichmakesthemidealforuseinoptoelectronicdevicessuchasphotodetectors,light-emittingdiodes(LEDs),andsolarcells.

Inadditiontotheirphotoconductivity,alpha-FeSe_xselenidematerialsalsohavehighelectricalconductivityandgoodthermalstability,whichareessentialpropertiesforenergystorageapplications.Supercapacitorsareoneofthemostpromisingenergystoragedevicesthathavegainedconsiderableattentioninrecentyears.Thesedevicescanstoreanddeliverenergyrapidly,makingthemidealforapplicationsthatrequirehighpowerdensities.

Theperformanceofsupercapacitorslargelydependsontheelectrodesused.Alpha-FeSe_xselenidematerialshaveshownpromisingelectrochemicalperformanceaselectrodematerialsforsupercapacitors.Thesematerialshaveahighspecificsurfacearea,whichenablesalargeramountofchargetobestoredattheelectrode-electrolyteinterface.Additionally,thesematerialshaveexcellentconductivity,whichensuresarapidchargeanddischargerate.

Oneofthekeychallengesinthedevelopmentofsupercapacitorsisthelowenergydensitycomparedtootherenergystoragedevicessuchasbatteries.However,alpha-FeSe_xselenidematerialshaveshownpotentialforimprovingtheenergydensityofsupercapacitors.Researchershaveinvestigatedtheuseofhybridsupercapacitorsthatcombinetheadvantagesofsupercapacitorsandbatteries.Inthesedevices,thealpha-FeSe_xselenideelectrodecanprovidethehighpowerdensity,whilethebatterycomponent