硅片平整度知识介绍课件

硅片平整度知识讨论IQC2006-4-20硅片平整度知识讨论主要内容如下：1、硅片平整度定义；2、硅片平整度测量；3、硅片平整度规范4、硅片使用中异常举例平整度SEMI标准关键字注释习惯用语SEMI标准用语新SEMI标准关键字注释TTVGBIRGlobalflatnessbackidealrangeTIRGFLRGlobalflatnessfrontleast-squaresrangeSTIRSFQRSiteflatnessfrontleast-squaresrangeLTVSBIRSiteflatnessbackidealrangeFPDGFLDGF3DGlobalflatnessfrontleast-squaresdeviationGlobalflatnessfront3pointdeviationTIR(TotalIndicatorReading)定义：TIR=|a|+|b|(SEMI标准中为GFLR)说明：1.参考平面(bf)G为距上表面所有点截距之和最小的平面；FPD(FocalPlaneDeviation)定义：FPD=±Max(|a|,|b|)(SEMI标准中为GFLD)说明：1.如果|a|>|b|，则FPD取正值；反之取负值；2.参考平面G(bf)为距Wafer上表面所有点截距之和最小的平面；Warp定义：Warp=|a|+|b|说明：1.参考平面M为距曲面Medianplane所有点截距之和最小的平面；2.不考虑重力影响；LTV(LocalThicknessVariation)定义：LTVi=ai–bii=1,2,3,4,...,n(SEMI标准中为SBIR)说明：1.参考平面B为Wafer背面；2.LTVmax=Max(LTV1,LTV2,...,LTVn)STIR(SiteTotalIndicatorReading)定义：STIRi=|ai|+|bi|i=1,2,3,4,...,n(SEMI标准中为SFLR)说明：1.参考平面Gi通过每一单元块的中心且平行于wafer上表面的拟合平面bfG；2.G为距单元块上每一点截距最小的平面；3.STIRmax=Max(STIR1,STIR2,...,STIRn)；STIR/L-Site(SiteTotalIndicatorReading)定义：STIRi/L=|ai|+|bi|i=1,2,3,4,...,n(SEMI标准中为SFQR)说明：1.参考平面bfGi为距单元块上每一点截距最小的平面；2.STIRi/Lmax=Max(STIR1/L,STIR2/L,...,STIRn/L)；SFPD/G-Site定义：SFPDi/G=±Max(|ai|,|bi|)i=1,2,3,4,...,n(SEMI标准中为SFLD)说明：1.|a|>|b|,取正值；|a|<|b|,取负值；2.参考平面Gi通过每一单元块的中心且平行于wafer上表面的拟合平面bfG；3.SFPD/Gmax=Max(SFPD1/G,SFPD2/G,...,SFPDn/G)SEMIStandardFQAMeasurement

MethodReference

SurfaceReference

PlaneandAreaReference

PlaneandAreaReference

SurfaceSiteSize

and

ArrayParameterParameterGBIRGF3RGF3DGFLRGFLDSF3RSF3DSFLRSFLDSFQRSFQDSBIRSBIDRangeRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationParameterParameterParameterParameterParameterReference

PlaneandAreaReference

PlaneandAreaS-TIRS-FPDS-TIRS-FPDS-TIRS-FPDLTVS-FPD

Semi用语現行习惯用语TTVTIRFPDTIR

NTVFPDFrontRef.CenterFocus3pointBestFitSiteBestFitBackRef.

CenterFocusSiteFlatnessGlobalFlatnessFrontBackBackFront3Point3Point(全面)Ideal(全面)(最小二乗法)bf

LeastSquares

(全面)LeastSquares

(全面)(bf)LeastSquares

(site)Ideal(全面)参考面的选取

(表面or背面)参考平面的設定

(bfor3pt)

又称理想平面(FlatnessQualityArea)FlatnessToolsPrinciple:Capacitancesensor(ADE)Wafertbcat=a-b-cRingSpacing局部平整度测量边缘问题PartialsActiveSiteSetup

Greenlinesindicatespartialsites.

两种方式测量结果差异举例---SFQDTrendChangedMeasurementtoPartialSitesActiveChangingtoPartialSitesActiveIncreasedSFQDonasampleofEpiwafersInactive0.17umActive0.24um

平整度SEMI标准ITEMSPOLISHEDWAFEREPITAXIALWAFER1.0umDesignRuleTwin-TubCMOS0.35umDesignRuleTwin-TubCMOS0.35umDesignRuleDRAMTTV(GBIR)10um----5umTIR(GFLR)------3umSFQD--<=0.5um18x18mm<=0.23um22x22mm<=0.35um22x22mmBOW60um------WARP60um------SEMISTANDARDFOR150mm(SEMIM1ANDM11)工艺过程硅片平整度变化擦片后、一次/牺牲氧化（900C）后、SIN（700C）后采用光刻PENKIB1设备进行平整度测量，每片的平整度三次测量结论：数值差异不大平整度有增大的趋势聚焦异常FlatnessValues测量TTVTIRBestFitSFPDBestFitBowBestFitWarpBestFitS1Defocus5.6201.943-0.271-0.736.16S2Defocus6.9552.443-0.241-20.6142.14S3Defocus5.2332.363+0.314-17.0035.77S233.0301.600-0.292+0.517.31S25OK2.8681.793-0.297-17.8238.35EPINotProc3.0651.801-0.224------异常与TTV相关

聚焦异常FlatnessValues测量SFQDSiteBestFitCurrentSBIDBackRefSFLDFrontRefBestFitSF3DFrontRef3PointS1Defocus-0.271-1.311-0.940-0.966S2Defocus-0.241-1.649-1.204-1.262S3Defocus+0.314-1.502