供应商-dmos产品介绍16年版

MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFETMOSFETVDMOS:VDMOS:VericalDoubleDiffusedMetalOxide重要参击穿电阈值电

ectrical导通电阻：Rds(on)-频率比较低时，导通损耗比较重要，Ron比较关键雪崩耐栅极电荷：Qg-频率比较高时，开关损耗比较重要，Qg/Qgd比较关键密勒电和d比较重要。通常用器件的或5导通电阻组

6

30

55 100

低压器件沟道电CapacitanceandCapacitanceCapacitanceisvotageQgisabetterparametertocharacterizeswitchinglossandspeed. MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFETCRHJ

Ⅱ

SmartFET(curren N60-200VLVSuperjunctionⅡ

Ⅲ5

CRHJMOSFETProductRing华晶N20V器件Ronsp比竞争者低

Rom2 Rom2 华晶器件的Ronsp国际知名IDM器件水平相当且终端设计有明显的优势

华晶600V超结器件和华晶器件特性和国知名IDM器件水平相SCRHJMOSFETProduct

单位面积Eas耐量对手

FOM(Qg*Ron)对

PrincipleofSJMOSSJMOSProcessMuti- MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFETCRHJMOSFETSuperJunctionHigh-VoltageMOSFETPlanarHigh-VoltageMOSFET“ PlanarHigh-VoltageMOSFET“T PlanarHigh-VoltageMOSFETNormalPlanarLow-VoltageMOSFETTrenchLow-VoltageMOSFETPlanarDepletonMOSFETSuperJunctionHigh-VoltageMOSFETSeriPartRdsonP4TO- TO-4TO 52;TO-5 252;TO-TO-TO-252;TO-263;TO-TO-252;TO-TO-3P(N);TO-6CS8J70A3,A8PlanarHigh-VoltageMOSFET“R”PartRdson TO- AB,TO-TO TO-O-252; 20AB,TO-5TO-252;TO-8252;TO-220AB,TO-TO220AB,TO-1TO-220AB,TO-4TO-251;TO-252;TO-TO-251;TO-252;TO-TO-220AB;TO-R4CS7N65A3R,A47TO-251;TO-252;TO-81TO-CS10N65A8R,F1TO-220AB;TO-CS12N65A8R,FATO-220AB;TO-7TO-8PlanarHigh-VoltageMOSFET“T”PartRDSON 2TO- TO-252;TO-4O-251;TO-22;TO-6 251;TO-252;TO-7TO-251;TO-252;TO-4TO-251;TO-252;TO-7CS16N75FA9T,APlanarHigh-VoltageMOSFETNormalPartRDSON59TO-2 252;TO-220AB;TO-3T-251;TO-28TO-252;TO-220AB;TO-33 223;TO-3TO-3SOT-223;TO-251;TO-61TO-251;TO-252;TO-TO-TO-33SOT-223;TO-251;TO-CS15N50A8R,FTO-220AB;TO-220F;TO-CS20N50A8H,ATO-220AB;TO-3PN;TO-TO-PlanarHigh-VoltageMOSFETNormalPartRDSONPac 1TO- 251;TO-8SOT 2 3TO-68 20AB;TO-1TO-220AB;TO-TO-220AB;TO-220F;TO-TO-92;TO-25TO-251;TO-252;TO-220AB;TO-TO-251;TO-252;TO-5TO-251;TO-252;TO-220AB;TO-8TO-263;TO-220AB;TO-TO-220AB;TO-220F;TO-CS2N70A3HY,A2TO-251;TO-252;TO-CS4N70A3D,A44TO-251;TO-252;TO-5TO-220AB;TO-6TO-220AB;TO-PlanarHigh-VoltageMOSFETNormalPartRDSONPac1TO- ;TO-2 3O-251;TO-252;TO-220AB;TO-4 TO-262;TO-263;TO-220AB;TO-7TO-262;TO-263;TO-220AB;TO-8TO-220AB;TO-TO-220AB;TO- 3TO-251;TO-252;TO-CS5N90ARH,A05 6TO-262;TO-220AB;TO-8TO-9TO-220F;TO-PlanarLow-VoltageMOSFETPartPaTO-28O- 4SOP8（2-4TO-251;TO-252;TO-TO-TrenchLow-VoltageMOSFETPartPTO-25,O- 6TO-4TO-721TO- SOP8;TO-6PlanarDepletionMOSFETPart1OT-ST- MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFET项考核条时间次数允许失效数①30②9020③0④ 0⑤ ℃,0⑥1680⑦0⑧100⑨240MOSFET可靠性MOSFET可靠性标准（C组考核MOSFETReliabilityStandard(CFormEvaluatioAllproductitemsreleasetomanufacturemustapprovedbyupperMOSFET可靠性标准（B组考核MOSFETReliabilityStandard(BFormEvaluatio项考核条时间/次数允许失效数①易焊性0②9020③1680④ 1680⑤1680⑥0⑦switchingtime)100⑧240Manufacturetestinstrumentintroduce(parameter Manufacturetestinstrumentintroduce(parameterManufacturetestinstrumentintroduce(parameterE4980A E4980ADE-41Manufacturetestinstrumentintroduce(parameter ESD测试设我们是国内唯一具有6寸和8利用先进的器件和工艺TCAD工具器件设计时进行充分器件制造时，严格的工 以 工艺窗口的拉偏本