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Condition:asiliconphotoconductorat300KBackgrounddoping,Electronmobility,Holemobility,Electronlifetime,Holelifetime,Detectorarea,Detectorlength,Biasvoltage,Gernerationrate,2.10Condition:asiliconphotocon1Calculation:a)darkcurrent;b)theexcessconcentration;c)thephotoconductivity;d)thedevicegain.Solution:a)ThedarkcurrentisgivenbyCalculation:a)darkcurrent;2sothedarkcurrentis==sothedarkcurrentis==3b)Theexcesscarrierdensityisc)thephotoconductivityisb)Theexcesscarrierdensityi4d)ThegainofthephotoconductivedetectoriswhereSod)Thegainofthephotoconduct52.13Condition:aGaAsp-i-ndetectorwithIntrinsiclayerwidth,Opticalpowerdensity,Photonenergy,Absorptioncoefficient,Devicearea,Calculation:thepromptphotocurrentofthedevice.2.13Opticalpowerdensity,6Solution:Thephotonfluxincidentonthedetectoris

Thephotocurrentis

Solution:Thephotonfluxinci72.16Condition:AnavalanchephotodetectorwithAvalancheregionwidth,TheimpactionizationcoefficientCalculation:ThemultiplicationfactorSolution:ThemultiplicationfactorfromEqn.(2.66)is2.16Condition:Anavalanchep83.8Condition:aGaAsp-n+junctionLEDwithElectrondiffusioncoefficient,

Holediffusioncoefficient,n-sidedoping,p-sidedoping,Electronminoritycarrierlifetime,Holeminoritycarrierlifetime,Calculation:injectionefficiencyoftheLEDassumingnorecombinationduetotraps.3.8Condition:aGaAsp-n+jun9Solution:Theelectronminoritycarrierdensityinp-sideisAndholeminoritycarrierdensityinn-sideisgivenbyThediffusionlengthareSolution:Andholeminoritycar10Theinjectionefficiencyis(assumingnorecombinationduetotrap)Theinjectionefficiencyis(a113.9Thediodeinproblem3.8isusedtogenerateanopticalpowerof1,thediodeareais1andtheexternalefficiencyis20％。Calculation:theforwardbiasvoltagerequired.Solution:Thephotonsgeneratedpersecondare3.9Thediodeinproblem3.8i12WhicharealsoexpressedbySothecurrentrequiredtogeneratethephotonsisWhicharealsoexpressedbySo13thecurrentwhenthediodeisforwardbiasisgivenbySolvingtheaboveequationforVyieldsthecurrentwhenthediodeis143.12Condition:aGaAsLEDcoupledtoanopticalfiberwithRefractiveindexforthecorelayer,Refractiveindexforthecladdinglayer,Calculation:themaximumangleofacceptanceforthefiberandthecouplingefficiencyforthediodeSolution:ThemaximumangleofacceptanceiscalculatedbyThecouplingefficiencyisExample3.7θ=32.6oη=0.293.12Condition:aGaAsLEDcou153.15Condition:AnAlGaAs/GaAsheterojunctionLEDat300KwithInjectiondensityforelectrons,

Injectiondensityforholes,BandgapofGaAs,

Calculation:thepositionofemissionpeak;theshiftinthepeakpositioniftheinjectiondensityincreasedto3.15Condition:AnAlGaAs/GaAs16Solution:Fromtherelationshipforinjectiondensityof

thepeakpositionishalfoflinewidthatthebandedgeSolution:Fromtherelationshi17forinjectiondensityofShiftofthepeakpositionforinjectiondensityofShift183.18Condition:aheterojunctionLEDbasedonGaAsat300KwithBiascurrentdensity,Thewidthoftheactivelayer,Calculation:the3dbcutofffrequencyofthediode.Solution:the3dbcutofffrequencyisisrelatedtobiascurrentdensitybyThus3.18Thewidthofthe19FromFig.3.6(p140)Sothe3dbcutofffrequencyiscalculatedasFromFig.3.6(p140)Sothe3dbc203.21Condition:AGaAsLEDwithOutputpower,Themaximumdevicearea,Theefficiencyofthedevice,Themaximuminjectiondensity,Calculation:thethicknessoftheactiveregionneeded.Solution:theopticalpowerdeliveredbythedeviceis3.21Themaximumdevi21where(=bandgapofGaAs)and(when)Solvingtheaboveequationfordyieldswhere(=bandgapofGaAs)and(224.1．Condition:aGaAslaserwithCavitylength,Bandgap,Calculation:thenumberofallowedlongitudinalmodesinanenergywidth.Solution:thefrequencyoftheresonantlongitudinalmodesisWhereqisaninteger.4.1．Bandgap,C23ThustheenergyofthesemodesisThenumberofallowedlongitudinalmodesinanenergywidthisThustheenergyofthesemodes244.3Condition:aFabry-PerotcavitywithLength,Mirrorreflectivity,Absorptionlosscoefficient,Refractiveindex,

Calculation:thephotonlifetimeSolution:thecavitylossis4.3Mirrorreflectivity,25ThephotonlifetimeinthecavityisgivenbySoThephotonlifetimeinthecav264.8Condition:twoGaAs/AlGaAsdoubleheterostructurelasersarefabricatedwithActiveregionthickness,Opticalconfinementfactors,Carrierinjectiondensityneedtocauselasing,Radiativerecombinationtime,Calculation:thethresholdcurrentdensitiesforthetwolasers.Solution:thethresholdcarrierinjectiondensitiesforthetwolasersare(forboth)4.8Opticalconfinement27Sothethresholdcurrentdensitycanbecalculatedbyasforthetwolasermentionedabove,thethresholdcurrentdensitiesforthefirstlaserforthesecondlaser.Sothethresholdcurrentdensi285.1Condition:AGaAs/AlGaAslaserwithThresholdcurrentdensity,Switchpeakcurrentdensity,Carrierlifetime,Calculation:thedelaytimebeforephotonemission.Solution:Thedelaytimeisgivenby5.1Switchpeakcurrentdensity29光电子学(南邮)全部作业答案课件30

Condition:asiliconphotoconductorat300KBackgrounddoping,Electronmobility,Holemobility,Electronlifetime,Holelifetime,Detectorarea,Detectorlength,Biasvoltage,Gernerationrate,2.10Condition:asiliconphotocon31Calculation:a)darkcurrent;b)theexcessconcentration;c)thephotoconductivity;d)thedevicegain.Solution:a)ThedarkcurrentisgivenbyCalculation:a)darkcurrent;32sothedarkcurrentis==sothedarkcurrentis==33b)Theexcesscarrierdensityisc)thephotoconductivityisb)Theexcesscarrierdensityi34d)ThegainofthephotoconductivedetectoriswhereSod)Thegainofthephotoconduct352.13Condition:aGaAsp-i-ndetectorwithIntrinsiclayerwidth,Opticalpowerdensity,Photonenergy,Absorptioncoefficient,Devicearea,Calculation:thepromptphotocurrentofthedevice.2.13Opticalpowerdensity,36Solution:Thephotonfluxincidentonthedetectoris

Thephotocurrentis

Solution:Thephotonfluxinci372.16Condition:AnavalanchephotodetectorwithAvalancheregionwidth,TheimpactionizationcoefficientCalculation:ThemultiplicationfactorSolution:ThemultiplicationfactorfromEqn.(2.66)is2.16Condition:Anavalanchep383.8Condition:aGaAsp-n+junctionLEDwithElectrondiffusioncoefficient,

Holediffusioncoefficient,n-sidedoping,p-sidedoping,Electronminoritycarrierlifetime,Holeminoritycarrierlifetime,Calculation:injectionefficiencyoftheLEDassumingnorecombinationduetotraps.3.8Condition:aGaAsp-n+jun39Solution:Theelectronminoritycarrierdensityinp-sideisAndholeminoritycarrierdensityinn-sideisgivenbyThediffusionlengthareSolution:Andholeminoritycar40Theinjectionefficiencyis(assumingnorecombinationduetotrap)Theinjectionefficiencyis(a413.9Thediodeinproblem3.8isusedtogenerateanopticalpowerof1,thediodeareais1andtheexternalefficiencyis20％。Calculation:theforwardbiasvoltagerequired.Solution:Thephotonsgeneratedpersecondare3.9Thediodeinproblem3.8i42WhicharealsoexpressedbySothecurrentrequiredtogeneratethephotonsisWhicharealsoexpressedbySo43thecurrentwhenthediodeisforwardbiasisgivenbySolvingtheaboveequationforVyieldsthecurrentwhenthediodeis443.12Condition:aGaAsLEDcoupledtoanopticalfiberwithRefractiveindexforthecorelayer,Refractiveindexforthecladdinglayer,Calculation:themaximumangleofacceptanceforthefiberandthecouplingefficiencyforthediodeSolution:ThemaximumangleofacceptanceiscalculatedbyThecouplingefficiencyisExample3.7θ=32.6oη=0.293.12Condition:aGaAsLEDcou453.15Condition:AnAlGaAs/GaAsheterojunctionLEDat300KwithInjectiondensityforelectrons,

Injectiondensityforholes,BandgapofGaAs,

Calculation:thepositionofemissionpeak;theshiftinthepeakpositioniftheinjectiondensityincreasedto3.15Condition:AnAlGaAs/GaAs46Solution:Fromtherelationshipforinjectiondensityof

thepeakpositionishalfoflinewidthatthebandedgeSolution:Fromtherelationshi47forinjectiondensityofShiftofthepeakpositionforinjectiondensityofShift483.18Condition:aheterojunctionLEDbasedonGaAsat300KwithBiascurrentdensity,Thewidthoftheactivelayer,Calculation:the3dbcutofffrequencyofthediode.Solution:the3dbcutofffrequencyisisrelatedtobiascurrentdensitybyThus3.18Thewidthofthe49FromFig.3.6(p140)Sothe3dbcutofffrequencyiscalculatedasFromFig.3.6(p140)Sothe3dbc503.21Condition:AGaAsLEDwithOutputpower,Themaximumdevicearea,Theefficiencyofthedevice,Themaximuminjectiondensity,Calculation:thethicknessoftheactiveregionneeded.Solution:theopticalpowerdeliveredbythedeviceis3.21Themaximumdevi51where(=bandgapofGaAs)and(when)Solvingtheaboveequationfordyieldswhere(=bandgapofGaAs)and(524.1．Condition:aGaAslaserwithCavitylength,Bandgap,Calculation:thenumberofallowedlongitudinalmodesinanenergywidth.Solution:thefrequencyoftheresonantlongitudinalmodesisWhereqisaninteger.4.1．Bandgap,C53ThustheenergyofthesemodesisThenumberofallowedlongitudinalmodesinanenergywidthisThustheenergyofthesemodes544.3Condition:aFabry-Perotc

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