器件和工艺数值模拟定义器件结构

定义器件结构器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第1页!REGIONTheREGIONstatementdefinesthelocationofmaterialsinarectangularmesh.REGIONNAME

MaterialsLocationNAME=<c>器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第2页!SemiconductorMaterialsSILICON硅GAAS砷化镓POLYSILI多晶硅GERMANIU锗SIC碳化硅SEMICOND半导体SIGE锗硅ALGAAS铝镓砷A-SILICOα－多晶硅DIAMOND金刚石HGCDTEINASINGAASINPS.OXIDEZNSEZNTEALINASGAASPINGAPINASP器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第3页!LocationCase1:X.MIN=<n>X.MAX=<n>Y.MIN=<n>Y.MAX=<n>IX.MIN=<n>IX.MAX=<n>IY.MIN=<n>IY.MAX=<n>

Case2:ROTATE

R.INNER=<n>R.OUTER=<n>X.CENTER=<n>Y.CENTER=<n>Case3:POLYGONX.POLY=<a>Y.POLY=<a>器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第4页!PolygonregionApolygoncanbespecifiedwhichdefinesboundariesofaregion.Thefollowingstatementcouldbeusedtospecifyatriangularpolysiliconregion:REGIONNAME=STRANGEPOLYGONPOLY+X.POLY=(1,2,3)+Y.POLY=(1,2,1)CircularregionAcircularregioncanbedefinedbyspecifyinga0parameter.Thefollowingstatementcouldbeusedtospecifyadonut-shapednitrideregionwithacenteratx=0andy=0,internalradiusof0.5micronandexternalradiusof1micron:Azerointernalradiuswouldconvertadonut-shapedregionintoacircularone.REGIONNAME=RINGROTATENITRIDE+X.CENTER=0Y.CENTER=0+R.INNER=0.5R.OUTER=1器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第5页!ELECTRODENAME=<c>[VOID][{TOP|BOTTOM|LEFT|RIGHT|INTERFAC|PERIMETE}][{[X.MIN=<n>|IX.MIN=<n>}][{X.MAX=<n>|IX.MAX=<n>]}][{[Y.MIN=<n>|IY.MIN=<n>}][{Y.MAX=<n>|IY.MAX=<n>]}][{(ROTATEX.CENTER=<n>Y.CENTER=<n>R.INNER=<n>R.OUTER=<n>)|(POLYGONX.POLY=<a>Y.POLY=<a>)}]|[REGION=<c>]器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第6页!ELECTRODNAME=RINGROTATE+X.CENTER=0Y.CENTER=0+R.INNER=0.5R.OUTER=1器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第7页!PROFILEThePROFILEstatementdefinesimpurityprofilestobeusedinthedevicestructure.StatementformatPROFILEtypelocalProfilesOutput器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第8页!UniformProfileAnalyticorOne-DimensionalProfilesfromDataFilesTwo-DimensionalProfilesfromDataFilesPolygonalProfilesRotatedProfile器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第9页!AnalyticorOne-DimensionalProfilesfromDataFiles|({X.CHAR=<n>|XY.RATIO=<n>}[X.ERFC]({N.PEAK=<n>|DOSE=<n>}{Y.CHAR=<n>|Y.JUNCTI=<n>}))器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第10页!器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第11页!ChoosingImpurityProfilestoInputThechoiceofwhichimpurityprofilestoinputfromthefileismadebyspecifyingeither,both,ornoneoftheparametersN-TYPEandP-TYPE.Ifneitherparameterisspecified,thenboththedonorandacceptorimpurityprofilesarereadfromthedatafile.Iftheimpurityprofilesaretakenfromaformattedfile,theparametersN.COLUMNandP.COLUMNareusedtoidentifycolumnsofdatacontainingnetdonorand/ornetacceptorimpurityconcentration.Asanexample,thefollowingPROFILEstatementsreadinimpurityprofilesgeneratedbyTMASUPREM-3inordertospecifythedopingforanN-channelMOSFET:PROFILEP-TYPE1D.PROCIN.FILE=CHANNELPROFILEN-TYPE1D.PROCIN.FILE=SRCDRNX.MIN=0WIDTH=1+XY.RATIO=.8PROFILEN-TYPE1D.PROCIN.FILE=SRCDRNX.MIN=3WIDTH=1+XY.RATIO=.8器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第12页!PolygonalProfiles(N.PEAK=<n>POLYGONX.POLY=<a>Y.POLY=<a>N.CHAR=<n>[N.ERFC])RotatedProfile(N.PEAK=<n>ROTATEX.CENTER=<a>Y.CENTER=<n>R.INNER=<n>R.OUTER=<n>R.CHAR=<n>[R.ERFC])器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第13页!器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第14页!RegridCriteria{POTENTIA|(E.FIELD[{X.COMPON|Y.COMPON}])|QFN|QFP|DOPING|ELECTRON|HOLES|NET.CHAR|NET.CARR|(MIN.CARR[LOCALDOP])|II.GENER|BB.GENER|PHOTOGEN|ELE.TEMP|HOL.TEMP|TRUNC|ARRAY1|ARRAY2|ARRAY3}器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第15页!器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第16页!REGRIDDOPINGLOGIGNORE=OXIDERATIO=2SMOOTH=1+IN.FILE=MDEX1DS器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第17页!InsulatorMaterialsOXIDENITRIDESAPPHIREOXYNITRIINSULATO器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第18页!ThefollowingREGIONstatementsmaybeusedtodefinethematerialregionsforaMOSFETthathasaninterfacebetweenoxideandsiliconaty=0.Inthisexample,thesiliconregionwasnamed“Body”andtheoxideregionwasnamed“SiO2”:REGIONNAME=BodySILICONREGIONNAME=Si02OXIDEY.MAX=0SiSiO2器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第19页!ELECTRODETheELECTRODEstatementspecifiestheplacementofelectrodesinadevicestructure.ELECTRODENAME=<c>LOCAL器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第20页!ELECTRODNAME=DrainINTERFACX.MIN=2.5ELECTRODNAME=GateTOPX.MIN=1.0X.MAX=2.0ELECTRODNAME=SourceINTERFACX.MAX=0.5ELECTRODNAME=SubstrateBOTTOM器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第21页!Aregionnamemaybespecifiedthatisconvertedtoanelectrode.Inthiscase,everynodeinthespecifiedregionbeespartoftheelectrode.Asanexample,thefollowingstatementconvertsregionnamedTop_partintoanelectrode.TheelectrodenameinthisexampleisarbitrarilychosentobeAnode.

ELECTRODNAME=AnodeREGION=Top_part器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第22页!type[N-TYPE][P-TYPE]region[REGION=<c>]local[X.MIN=<n>][{WIDTH=<n>|X.MAX=<n>}][Y.MIN=<n>][{DEPTH=<n>|Y.MAX=<n>}]OutputDopingFile[OUT.FILE=<c>]器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第23页!UniformProfileUNIFORMN.PEAK=<n>器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第24页!器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第25页!Two-DimensionalProfilesfromDataFiles|({2D.PROC|SUPRA|TSUPREM4|(2D.ASCII[X.COLUMN=<n>][Y.COLUMN=<n>][N.COLUMN=<n>][P.COLUMN=<n>])}IN.FILE=<c>[N.OFFSET=<n>][X.OFFSET=<n>][Y.OFFSET=<n>][X.CHAR=<n>][X.ERFC][Y.CHAR=<n>][Y.ERFC])器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第26页!Two-DimensionalProfilesFromDataFilesTheentiretwo-dimensionalimpurityprofilemaybeinputfromadatafilebyspecifyingtheIN.FILE

parameterandoneparameterfromtheset2D.PROC,SUPRA,

TSUPREM4,and2D.ASCII.BydefaulttheoriginfortheimpurityprofileisalignedwiththeorigininMedici.TheX.OFFSETandY.OFFSETparametersmaybeusedtoshiftthetwo-dimensionalimpurityprofilerelativetoMedicistructure.器件和工艺数值模拟定义器件结构共32页，您现在浏览的是第27页!COMMENTSpecifyimpurityprofilesandfixedchargePROFILEP-TYPEN.PEAK=3E15UNIFORMOUT.FILE=MDEX1DSPROFILEP-TYPEN.PEAK=2E16Y.CHAR=.25PROFILEN-TYPEN.PEAK=2E20Y.JUNC=.34