CMOS Front End Process CMOS前端工艺英文版课件：part1 2006 Course-Process-Flow

INITIALOXIDE&NITRIDEDEP Initialox: 450+/-50Å,dryoxidationOxidestrip: Padox: 100+/-10Åoxidationat800ºCNitride: 2000+/-150Å2000ÅNitride100ÅPADOxideNITRIDEETCHSTIMASK

PlasmaEtchNitride/oxideafterpatterning PlasmaresiststripbyO2(PRS) Chemicalresiststrip(usingsulfuricacid)(CRS) 2000ÅNitride100ÅPADOxideSTIETCHSTIetch:shallowtrench(3.2kÅdepth)-LAMetcher.Selectivity.

LinerOxideClean1850ÅNitride100ÅPADOxide410/21/2022TOP CENTER LOWERLEFTTrenchEtchWide73ºNarrow76ºHDPDEPOSITION Linerox:250+/-20Å,dryoxidation HighDensityPlasmaOxideDepositionforGapFill

6300+/-500Å 6300ÅHDP1850ÅNitride100ÅPADOxide250ÅLinerOxideAs-DepositedHDPGapfillSTICMPOxideEtchMASK

OxideetchbackoutsideSTIregionasoxidemuchthicker.IfCMPdonewithoutmask,dishingwillbemore. PRS&CRS OxideCMPforSTI 1400ÅNitride100ÅPADOxideDishing<300ÅXSEMHDPSTI(PostCMP)TheSTIoxideCMPprocessstopsatSiNwithsomeSiNloss.WithmaskandSTIoxideCMP,theHDPoxidecanbeplanarizedbeforeSiNisremoved.NITRIDEREMOVALNitrideremoval: HF+H3PO4at160ºC Sacrificialoxidation: 100Å,dryoxidationat900ºC100ÅSACOxideN-WELLN-wellMASK

Implant: Well:PhosphorusE13/500keVPunch-thru:PhosphorusE13/140keVPRS&CRS N-WellP-WELLP-wellMASK

Implant:Selfalignmentandrobustnessinmanysteps. Well:BoronE13/300keV

Pfieldimplant:BoronE12/130keV

Punch-thru:BoronE13/60keVVtadjust:BF2E12/40keVPRS&CRS N-WellP-WellP-VtAdjustVtadjustMASK

Implant: PhosphorusE12/50keV.

PRS&CRS N-WellP-WellP-VTP-pthruN-VtAdjustN-VtAdjustMask

Implant: BF2E12/40keV

PRS&CRS N-WellP-WellN-VTN-pthruGATEOXHFetch GateOx1: 80Å,850ºCThinoxMask

HFetchtoremove80Å. CRS GateOx2 HFetchtoremove20Å.Hence60Åoxideleftinthickoxideareas.RTO,togrow30Åoxide,1000ºC.Additional5Ågrownon60Åoxide. 65Åthickgateoxide30ÅthingateoxidePOLYPolyDeposition: 2000+/-120Åat620ºCPolyMASK

N-PolyImplant:PolydopedN+here.Onlysmallareaforp-channelgateisnotincludedhereasitwillhaveboronimplant. Phosphorus,E15/40keVPRS&CRS gateoxideN-WellP-Well2000ÅPolyPImplantPOLYPolyAnnealDistributesdopantsuniformly Densification:800ºCDesignRule:Line/Space=0.18/0.25

GateMASK -NikonDUVPolyetch PRS&CRS HFEtchtoremoveoxide.PolyRe_Oxidation800ºCinO2 N-WellP-WellNLDDNLDDMASK[NMOS]

Implant:Boron,pocketimplant,E13/15keV As,Lddimplant,E13/8keVPRS&CRS N-WellP-WellNNPLDDPLDDMASK[PMOS]

Implant:Pocketimplant,AsE13/110keV Lddimplant,BF22.5E14/5keV PRS&CRS OxideLiner150Å N-WellP-WellNNPP150ÅoxidelinerNITRIDESPACER800Ånitridedeposition Nitridespaceretch NitrideSpacerN-WellP-WellNNPPN+&P+N+N+MASK

S/DImplant,AsE15/70KeV PRS&CRSP+P+MASK

S/DImplant,BoronE15/4.5KeV PRS&CRS P+RTAAnneal,dopantactivationat1020ºC.Typically,30s.Highrampratespikeannealexploredcurrently.N-WellP-WellP+P+N+N+CoSALICIDE

Co/Ticapdeposition

1stRTA :550ºC30”N2

Salicide

EtchBack:.SPM:H2SO4/H2O2

2ndRTA :850ºC30”N2

N-WellP-WellCoSailcideP+P+N+N+SalicideTransistorTEMPMOS20/0.18NMOS20/0.18CoSi230AgateoxideSi3N4SpacerILDNitridePolyGateLinerTEOSINTERLAYERDIELECTRICNitrideLinerdeposition 3500Å4.5%Bx4%PBPSG Densificationat850ºCHotDIWpolymerremoval 10,000ÅPETEOSdeposition OxideCMPforILD

N-WellP-WellP+P+N+N+3.5kÅSABPSG10kÅPETEOS500ÅNitrideCONTACTETCHContactMASK

Contactetch0.22umbottomCD

PRS+CRS

N-WellP-WellP+P+N+N+W-PLUGBarrierforW-plug 200ÅTi/250ÅTiNAnnealingat685ºC 3,000ÅWCVD WCMPforIMD WTi/TiNN-WellP-WellP+P+N+N+CoSixCoSixILDSiNMETAL1DEPOSITION300ÅTi/300ÅTiN/4500ÅAlCu/50ÅTi/250ÅTiN

WTi/TiNN-WellP-WellP+P+N+N+Met150ÅTi/250ÅTiN4.5kÅAlCu300ÅTi/300ÅTiNMETAL1ETCHMetal1MASK

Metaletch(L/S)=0.23/0.23.

Metalslope:88~90

PostmetalEtchpolymerclean,noWplugcorrosion N-WellP-WellP+P+N+N+Met1N-WellP-WellP+P+N+N+Met1Met2Met3Met4Met5Met6PolyContactVia1Via20.18mSTI,CoSalicide,6LMLogicDevice<TC2StackVi