专业外语期末复习-2015

1、期末复习期末复习专业外语专业外语考试题型考试题型 一、汉译英（一、汉译英（2020分）分） 1010个词，每个词个词，每个词2 2分分 二、英译汉（二、英译汉（2020分）分） 1010个词，每个词个词，每个词2 2分分 三、翻译句子（三、翻译句子（4040分）分） 1010个句子，每个句子个句子，每个句子4 4分分 四、翻译（四、翻译（2020分）分） 一整段或者几个句子一整段或者几个句子考试注意事项考试注意事项 一、考试时间：一、考试时间：2 2个小时个小时 7 7月月1111日日9 9：00-1100-11：00 00 经信经信F2F2 二、不允许带词典（包括电子词典）二、不允许带词典（

2、包括电子词典） 三、手机关机（用手表看时间）三、手机关机（用手表看时间） 四、不允许上厕所四、不允许上厕所 五、交卷要在一个小时十分钟之后！五、交卷要在一个小时十分钟之后！复习题复习题一、掌握（一、掌握（给出汉语可以写成英文给出汉语可以写成英文） semiconductor：半导体半导体 photoconductivity：光电导性（率）光电导性（率） rectification ：整流整流 intrinsic properties：本征特性本征特性 Hall effect ：霍尔效应霍尔效应 current carriers ：载流子载流子 carrier mobility ：载流子迁移率载

3、流子迁移率 silicon ：硅硅（Si） germanium：锗锗（Ge） solar cell ：太阳电池太阳电池一、掌握（一、掌握（给出汉语可以写成英文给出汉语可以写成英文） alkali halide：碱金属卤化物碱金属卤化物 transistor ：晶体管晶体管 solid-state laser ：固体激光器固体激光器 optical fiber：光纤光纤 quantum mechanics：量子力学量子力学 potential barrier：势垒，位垒势垒，位垒 periodic lattice ：周期点阵周期点阵 activation energy：激活能激活能 electr

4、on-hole pairs：电子、空穴对：电子、空穴对 dislocation ：位错位错一、掌握（一、掌握（给出汉语可以写成英文给出汉语可以写成英文） ion implantation ：离子注入离子注入 field effect-transistor：场效应晶体管场效应晶体管 wafer：晶片晶片 Wet chemical etching：湿法化学刻蚀湿法化学刻蚀 diffraction effect：衍射效应衍射效应 birefringent：双折射的双折射的 index of refraction：折射率折射率 focal length：焦距焦距 donor：施主施主 acceptor

5、：受主受主一、掌握（给出汉语可以写成英文）一、掌握（给出汉语可以写成英文）interference contrast：干涉相称干涉相称valence electron：价电子价电子Liquid phase epitaxy(LPE)：液相外延：液相外延 Field effect-transistor(FET)：场效应晶体管：场效应晶体管Integrated circuit(IC)：集成电路：集成电路 Light-emitting diode(LED)：发光二极管：发光二极管Metal-Oxide-Semicondutor(MOS)：金属氧化物半导体；：金属氧化物半导体；physical vapo

6、r deposition(PVD)：物理气相沉积；：物理气相沉积； chemical vapor deposition(CVD)：化学气相沉积：化学气相沉积numerical apertures (NA)：数值孔径数值孔径 negative temperature coefficient of resistance:电阻的负温度系数电阻的负温度系数 silver sulphidel : 硫化银硫化银 poly-crystalline ingots : 多晶块多晶块 titanium : 钛（钛（Ti） zirconium：锆锆（Zr） tellurium：碲碲（Te) lead sulphid

7、e : 硫化铅硫化铅 iron pyrites ：黄铁矿黄铁矿 selenium：硒硒（Se） copper：铜：铜二二、认识（给出英语能翻译成汉语）认识（给出英语能翻译成汉语） Transmission polarized light microscopy：透射透射偏光显微术偏光显微术 wave length：波长波长 radio receivers ：无线射频接收器、无线电接收无线射频接收器、无线电接收机机 galena：方铅矿方铅矿 photocell：光电管、光电池光电管、光电池 copper oxide：氧化铜氧化铜 crystal detector：晶体检波器晶体检波器 vacuu

8、m tube ：真空真空管管 infrared detector ：红外红外探测器探测器 fields of force：力场力场二二、认识（给出英语能翻译成汉语）认识（给出英语能翻译成汉语） N-fold degenerate ：N度简并度简并 oscillator：振子振子 Pauli principle：泡利不相容原理泡利不相容原理 excited states：激发态激发态 potential barrier：势垒、位垒势垒、位垒 magnesium：镁镁 filled band ：满带满带 empty band：空带空带 thermally excited：热激发热激发 intrin

9、sic conduction：本征导电：本征导电二二、认识（给出英语能翻译成汉语）认识（给出英语能翻译成汉语）二、认识（给出英语能翻译成汉语）二、认识（给出英语能翻译成汉语）X-ray topography： X射线形貌学射线形貌学Optical Microscopy ：光学：光学显微术（镜）显微术（镜） stacking fault ：层错：层错 Etchant： 蚀刻剂蚀刻剂 crystallography ：结晶学：结晶学polishing etch ：抛光腐蚀：抛光腐蚀 selective etch ：选择腐蚀：选择腐蚀 avalanche：雪崩：雪崩 anodic：阳极的：阳极的 c

10、athodic：阴极的：阴极的infrared spectroscopy：红外光谱学：红外光谱学二、认识（给出英语能翻译成汉语）二、认识（给出英语能翻译成汉语）Cr：chromium：铬铬depth of field：景深，视场深度景深，视场深度resolution：分辨率分辨率 compound microscope：复显微镜复显微镜 magnification：放大倍数（倍率）放大倍数（倍率）transmitted light microscope：透射式光学显微镜透射式光学显微镜reflection microscopy：反射显微技术反射显微技术 Czochralski growth：提

11、（直）拉法生长提（直）拉法生长 polarize：偏振片、起偏器偏振片、起偏器prism：棱镜棱镜三、句子三、句子1、It is, nevertheless, a high tribute to the skill and care of many experimenters that, in spite of this, semiconductors had been recognized as a distinct class of substances and their main properties appreciated long before a comprehensive th

12、eory was available to account for them. P12、These effects are now known to be due to oxide films or actual gaps separating the individual crystals but led to the metals titanium and zirconium once being listed as semiconductors. P13、It must be admitted, however, that no infallible criterion was avai

13、lable till the quantum theory of solids gave an understanding of the reasons for the various properties observed. P14、A review of this early work has been given by K. Lark-Horowitz together with a very extensive bibliography containing over 350 references. Earlier reviews by B Gudden also deal exten

14、sively with this phase and discuss in some detail the problems of identifying semiconductors. P25、The latter, which is generally known as the carrier mobility, and which we shall define more precisely later generally tends to decrease as the temperature is raised, especially at the higher temperatur

15、es, and this accounts for the decrease in conductivity of metals with increasing temperature. P36、The substances concerned were mainly metallic oxides and sulphides and the defect semiconductors were those with a metallic content less than that corresponding to stoichiometric composition, i.c. oxidi

16、zed compounds. P47、The importance of this work was in showing the vital part played by small deviations from stoichiometric composition in determining the properties of compound semiconductors. P48、Although they are not strictly semiconductors but insulators, mention must be made of the large amount

17、 of research carried out by R. W. Pohl and his collaborators on the alkali halides, since this helped greatly to clarify many of the properties of semiconductors.P49、Much of the uncertainty of the early work on semiconductors arose through a failure to differentiate between effects, which arise in t

18、he bulk of the material, and those, which are characteristic of the surface or of the interface between two different materials. P510、The use of single crystals has enabled not only the separation of the bulk and surface properties but has also enabled the surface and the interface between two types

19、 of semiconductor, or between a semiconductor and a metal, to be studied in much greater detail. P511、More recently the study of amorphous semiconductors has led to a fuller appreciation of those properties, such as high carrier mobility, that depend principally on the quality of the crystals being

20、studied and those more fundamental properties which do not depend on long-range order. P512、 The photoconductive properties of selenium, and of copper oxide, have been used to provide exposure meters for photography and photocells, which are used in the film industry for transforming the markings on

21、 the sound track into electric currents for implication and reproduction by loud-speakers. P513、The discovery that a fine wire, or cats whisker, in contact with a crystal of semiconducting material made an excellent rectifier for high-frequency currents led to a great increase in the sensitivity of

22、radio receivers, and this type of device was widely used in the early days of broadcasting. P614、The modern successor to the transistor is the integrated circuit (IC.) in which many transistors and their associated components such as resistors, capacitors etc. are produced by controlled diffusion of

23、 impurities into a small chip of silicon. P715、Here these forces are supposed to attract the electron strongly if it moves outside the boundary, and in the simplest form of the theory it is assumed that they set up an impenetrable potential barrier which holds the electrons in the solid. P816、In Sum

24、merfields theory, the allowed energy levels for the valence electrons of a crystal of macroscopic dimensions lie very close together and their values extend from nearly the bottom of the potential trough in which the electrons move to indefinitely high values. P917、If now we have N atoms in a crysta

25、l, and we assume the crystal to be expanded so that the lattice spacing becomes very great, then the allowed energy levels will be just the atomic energy levels which, for the moment, we shall assume to be non-degenerate, i.e. each has a separate energy. P1118、This not only explains why inner electr

26、ons do not contribute to conduction but it gave Wilson the clue to the essential deference between metals on the one hand and insulators and semiconductors on the other. P1219、Most of the substances with which we shall be concerned have such a structure, but may not always consist of large single cr

27、ystals but of aggregates of very small crystals with random orientation. P1320、The number of excited electrons would increase with temperature in a manner governed by a process having an activation energy, of the order of E and we should expect a rapid increase of the conductivity with temperature.

28、P1421、As we shall also see later the effect of very small amounts of impurity can have a marked effect on this activation energy so that materials which have considerably greater values of AE may behave as semiconductors when they contain certain active impurities. P1422、If we assume that the variat

29、ion with T of the mobility of electrons and holes in an electric field is small compared with the variation in the exponential factor in (4) then we have for the conductivity , which is then simply proportional to the number of carriers, a variation of the form. P1523、In many instances, it is found

30、that the energy required to excite an electron into the conduction band from a donor level is so small that the electrons from all, the available donor levels are excited and are in the conduction band at room temperature. P1624、Hence, for a semiconductor in this condition the resistance will increa

31、se with increasing temperature, till a temperature is reached at which the intrinsic electrons begin to predominate, when it will begin to fall exponentially in the manner once thought to be characteristic if semiconductors. P1625、When light frequency is high enough so that a quantum absorbed by a v

32、alence electron has sufficient energy to raise it from the top of the full band to the conduction band, extra carriers are created and these lead to increased conductivity. P1726、It will be clear from the above calculation that if germanium is to be intrinsic at room temperature it must be free from

33、 impurities giving levels near the conduction band to better than one part in 109. P1827、It is anticipated that the reader will have a hands-on involvement with etching and optical microscopy, but it is expected that with X-ray topography, the appropriate specialist will perform the work and help in

34、terpret the results. P1828、It turns out, however, that the minority carriers are nevertheless, of great importance, as many electronic processes in semiconductor technology are controlled by the minority carriers, the density of which, being small, may be more readily varied. P1829、One to one correl

35、ations between dislocations and emitter to collector shorts in bipolar transistors, as well as avalanche sites in photo detectors have been made, whereas process induced stacking faults are known to reduce the storage time in MOS memory devices. P1930、If defect characterization is worthy of a philosophy, then it must be do not u