使用SI9000进行PCB常规阻抗计算

1、SI9000常规阻抗计算常规信号分为微带线和带状线，微带线指该信号线只有一个参考平面(表底层)，带状线指该信号线在两个参考平面之间(内层)，故阻抗计算需要选择不同模型来完成。一、外层(微带线)单端阻抗计算模型JfcPolarSi9000PCBTranEmissionUneFieldSolver-E:si9CK)05iD0ClIJntitledl.Si91=j回1.单端阻抗2构一一2.单端阻抗*II型一一3.设置相应参数说明：介电常数和板材有关，常规FR4介电常数在4.2-4.5之间，常规半固化片介电常数106(3.9)、1080(4.2)、2116(4.2)、7628(4.5),罗杰斯板材RO

2、4350BT电常数是3.66,M6板材介电常数在3.3-3.5二、外层（微带线）差分阻抗计算模型1.差分阻抗2构一一2.差分阻抗*II型一一3.设置相应参数说明：常规差分控制阻抗100ohmUSB空90ohmTypec控90ohm以下是1.6mm板厚常规八层板的层叠1.3个信号层、2个地、一个电源2 .射频隔层参考，线宽16mil3 .关键信号在S1层，注意S2跨分割问题，适用于杂线多的情况厚度铜厚（oz>37.5ohn)45ohrD50ohndiff85diffgodiffLOO参考层TOP011.&0.Fi+plating10.57r.566.5/6.65.9/7.24.9/

3、8.2L2PP4GND021.21CORE4.331LZ1W.5655.5/7.65.1/84.1/9L2tL5PP15S2.1.218,5655.S/7.65,1/84.1/9L2fcL5CORE4.3POWEK05L21PP16S31,218,5655.5/7,65.1/S4.1/9L5&L7CORE4.3GND071.21PP4B0T081.&Oh5+platina10.5T.566.5/6,65.9/7.24.9/e+2L7A.根据微带线单端模型50ohm阻抗计算如下（线宽6）:B.根据微带线差分模型阻抗计算如下:F1上P山筝900。亡”司加跖刖皿飞旧，"&q

4、uot;皿加映第。口供佩1,喇1t.FileEditConfigureHelpQ512|心ParameterEnhyUnits演MilsCInchesCMicronsCMilmetres：Edge-CoupledCoatedMicrostrip1BSubstrate1Height.ppgrinslnjmeEw.ccmEdgft-CoupledSurfaceMicrosL.Edgfr-CcupledCoatedMiarost.Edgs-CoupledSurfaceMicrosL.uTraceSeparaiionTiaceThicknessCoatingAboveSubsetCoatingAbov

5、eTraceCoatingBetwaemTiacssCDatingDieleictric：Substrate1DidectricLq四日Tree?WidlhUpperTraceWidth川4.0000*E1J4.2000*rwi5.SQ00+"明14.9000+rsiK7.2000+f1000+口1.0000+C2CEr|1.0000|1.0000|4.2000TdlerdneeMinin15nMa疝mumO.OOTO|4,0000|4,0000CafajlateO.ODro|42000|4,2000Cjfailate|D.ooroI_5.9000I_a900000000I"

6、;000I4900emulate|0.0000I7.2000I72000Cabulate|口而0PiToOO|16000Cailahe|OOOOU|1.0000|1,0000|0.0000|1,0000|T0000|0.0000I1.0000I1.00000.0DXI4.2000I4,2000BEdgtCoupledCoatedMrarost.NotesAddyciuicownentshereInterfaceSg广StandadGEHtendedlDf启$nt阊Imp不扫ngG.S.ConvergenceFineStoker)Coarse(Faster|EPolar5i9000PCBTran

7、smissionLineFieldSolver-iE:si9CW5.i9000Untitiled,Si9IJ_pRteEditConfigureHelpr就Haa三cz三墨ParameterEh便Unit*后MilsCInchesPMicronsLMiinietre(TraceSeparationTraceThicknessCodiinoAboveSubstrateCoaGngAboveTiaceCdaGhgBelwCfthTf-aMSCoalingDielecbiic白DiMefenlialImpsdarceEdge-CoupledSurfac：EiMiaosL.Edge-CoupledSu

8、rfac：EiMiaosL.Edge-CoupledCoabodMicrost.Edge-CoupledCoatedMicrost.InterfaceSl¥lerStandardt*ExtendedG.S.Cdrtvgen&sRm|5I叶闻CQMr5eFasierNotesaddyourccmmertsfeieSubsbale1HeightH14.0000+工0.0000Sub$brale1D值值dnicEi14.2000+1Io.ooaoLwerTnaceWidth笆4.9DOO0.0000事.2叩口上T1ClC3CEi1.600010000100001.00004.200

9、0Edoe-CoupledEmbeddedMi.Edge-CoupledEmbeddedMi.LosslessCalculationF困nun修DependentCakculatenDiliefenialSluKJhjiesToleranceMinimumMaamun4.0Q0C|4,000匚|4.-00|<2000C4late|4.9Q00|-000|0.0000|39D00|39000Cafca4ato|I口00WI以2口DOI氏2000CaUilale|0.0000rIWC1.6000Cafcuiate|0.000011X1000|1.0000|0.00001LOOMI1.0000

10、F优1,0000|1,00000.0000I4,Z0TOI_4.20001QQ22|100.23三、内层（带状线）单端阻抗计算模型1.单端阻抗2构一一2.单端阻抗*II型一一3.设置相应参数四、内层（带状线）差分阻抗计算模型1.差分阻抗2构一一2.差分阻抗*II型一一3.设置相应参数厚度铜厚(on)37.5ohm45ohm50ohmdiff85diffOOdifflOO参考层TOPOl1.60.5+plating10.57.566.5/6.65.9/7.24.9/8.2L2PP4GND021.21CORE4.3S11.218.5655.5/7.65.1/84.1/9L2虬8PP16S21.21

11、8.5655.5/7.65.1/84.1/9L2&L5CORE4.3F0WER051.21PP16S31.218.5655.5/7.65.1/811/9L5aL7CORE4.3GND071,21PP4B0TO81.6Oh5+platingIS5工56氏5/6.65.9/7.2I9/&2L7根据常规8层板层叠计算内层阻抗A.内层单端阻抗模型：S1:H1=16+1.2+4.3=21.5.fcPolarSiMOOPCSTransmiMionLineFieldSohwr-(EAli9000i9000Ufttid#d.Si9FileEditConfigureHelp用嬴尸"Iq

12、|壬三|/|二三三靠靠PaiamBlerEntryUrrR耳EmbeddedMicrostnp1E1G1AEmbeddedMicfO$tnplElB2t自Enteddedkta的由2BgmEnteddedlMb的加2B加BOffsetShipline1B1IANotesaddyourcommentshereimeffaceSMeCSiandad国ExtendedG.S.Convergence演Frie5loiwiCCoaisefFasls)Subfbate1HeightHI1山18cbicEr1Substide2HiSubstrale2DidectncEr2TctaarraMbrwjrftMa

13、wmurh|21.5DQ0V|Q.OaOO|Z1.5000|21,5000|工工口叩"TD.QQOO|4.3MQ|42000CAUae|5.5000MIOlOOtnI员5000|5i5000CakUaiE|4.2000“T0.00004.2000f4,2000C>Jcu|LdwciTiactWidrtiW”UpperTraceWidlhTiaceThicknessooo-|aoooo5.00001&0000|aoatn|4.a(no|4.0000|1200Q*f-0,000011.2000I1.2000CdcUalu|ImpedanceZd015CI51.56I51.5

14、6|翼吸翩,MihInchesCMicronsCMiimeibiiK三OffsetShipline102ALosslessCalculationFrequencyDe；p&rdemCftteulaticnSingla£ndiBdSbiucturesH2=1.2+4.3=5.5S1层50ohm5mil（说明：阻抗允许误差正负10%H1和H2数值）S1和S2参考层面厚度相差较小阻抗线宽一致（说明：如果H1和H2数值正确，H1和H2即使颠倒，阻抗变化很小）S2:H1=4.3S2层50ohm5milS3:H1=4.3H2=1.2+16=17.2S3层50ohm5milB.内层差分阻抗

15、模型（介质厚度和单端阻抗一致）：51: H1=16+1.2+4.3=21.5H2=1.2+4.3=5.552: H1=4.3H2=1.2+16+1.2+4.3=22.753: H1=4.3S1、S2、S3:90ohmFileEditConfigui'eHelpTQS12add国吕卫娼IBPaiameerEnbiyUnisf*MhCInchesCMicionsC"MliinelresEdge'CoqpledEmbeddedML.Edge-CoupledlEmbeddedEdgs-CoupledlEmbedded.Edge*Coup>liedlEmbedded.雪E

16、dge-CoupledlEmbedded.IrterfaeeSljileCStandard国EmendedNtf&sAdd$wuicommenthere&ub他附1HeightHl|215000+Sijblrate1DielecbicE#|4.3000+SkiuJale2He削H2|5.5000+Substrate2DhdectncEr24.ax)o+LweihaceWidthWiUppaTiaceWidth加riooo+TraceSeparalian"Toood-+TraceThicknessTl12000+DiKerenhaJImpedanceC.OOOC:100

17、。：OOCCCjIljIjc|-0.0000I-1.2tno|1.20DO羽3融|OlOOOD|.5000|5,EODOa|0.0000|4,2000|4.2Q(»Calailfllt|atntn|a.100015；iooo000001213X0|215000oooor4.2000|4200CTgleianceMinirnumMaMmumC己leu因e|0.000041OQ0|41QQD匚>lcu回官|G.5.CorwagprraC*Fne(Slaweir)CCoaise(Fastei)之PolarS；9000PCBTransmifsicnLintFieldSoher-lEAs

18、iWQO?l9O0OUntitled.Sf9ghPolarS；9OO0PCBTransmissionLineFieldSolver-E：5i900a5iW0CUntrtled,Si界S1、S2、S3:100ohM理计算，概不赘述。（关于射频线阻抗计算隔层参考，共面阻抗计算参考<SI9000隔层及共面模型计算>）阻抗说明：叠层厚度通常由单板实际情况决定，如果叠层确定，线宽变小，阻抗变大，差分阻抗线之间的间距变大，阻抗变大，差分100ohm计算时，可通过改变线宽和间距实现（注意：建议差分间距不要大于2倍线宽如4的线宽8的间距）。单端阻抗主要依靠改变线宽实现。层叠厚度和阻抗反比，距离主要参考层面越远阻抗越大。合理的层叠（参考常规层叠规则及选用方法）,是计算阻抗的必要条件，有些层叠计算不出来需求阻抗。通常我们提供给制板厂的层叠和线宽，生产制造时会进行微调，为区别单线和差分阻抗给DF"程师调整阻抗提供便利，要求同一层面的不同阻抗线线宽不同，即单线50ohm差分85ohm差分90ohm差分100ohm要求不同的线宽。阻抗存在争议：以上内层算法是SI6000时就存在的模型计算，SI9000在SI6000的基础上又推出新的模型，但是存在争议关于内层H1和H2的厚度。关于H1和H2存在争