载子寿命原理测试方法的实际作用介绍

1、会计学1载子寿命原理测试方法的实际作用介绍载子寿命原理测试方法的实际作用介绍Page 2光電流與載子光電流與載子Page 3動態動態偏壓情況下的偏壓情況下的PN結中性區空乏區結中性區空乏區在以太阳模拟测试系统量测太阳电池片在以太阳模拟测试系统量测太阳电池片IV曲线时，曲线时，PN结存在一个动态偏压情况下工作。结存在一个动态偏压情况下工作。为解决此复杂现象，单一二极体模型须要增加另一代为解决此复杂现象，单一二极体模型须要增加另一代表合复电流的二极管（及串，并联电阻）才足够充分表合复电流的二极管（及串，并联电阻）才足够充分说明空乏区复合现象及太阳电池等效电路说明空乏区复合现象及太阳电池等效电路 P

2、age 4A.初步描述空乏区电场 (漂移电流-Drift Current)B.进一步描述类中性区掺杂浓度梯度（扩散电流 -Diffusion Current)C.强调载子由于激发所产生与复合而形成电流梯度 复合与过剩载子基本关系各种复合机制少子寿命的倒数 0VV0V/et n( p)=Ae-t/ , is lifetime, p, n is excess carriersPhotovoltage follow the law: V= V0e-t/ Page 6eff = =nqw J ph移动率移动率(Mobility)与电导与电导L 由光产生過剩载子浓度增加，导致Wafer Conducti

3、vity增加 J photogeneration = J recombinationLJ ph (n+p) -依Wafer表面反射，厚度，光照條件及Light Trapping情形而调整- Excess carrier density is position dependent and considering thickness,as average value-Mobilities are a function themselves of carrier density(both via doping and excitation) and temperature Therefore, th

4、e absolute value of conductance ahould be always measured in order to determine the specific excess carrier density at which the measurement has taken placed-Cuevas,Macdonald 2003 ANU体寿命体寿命b与与有效有效寿命寿命effPage 7体寿命体寿命b与与有效有效寿命寿命effPage 8体寿命体寿命b与与有效有效寿命寿命effPage 9Page 10bbbDL=Page 11 Band to Band，由於，由於

5、Radiative Lifetime很長對於很長對於Si材料材料影響不大，可以不計入考慮影響不大，可以不計入考慮.(對直接能隙對直接能隙GaAs 較明顯較明顯) Auger與雜質濃度無關，但與載子濃度平方成反比與雜質濃度無關，但與載子濃度平方成反比 SRH直接與直接與Si材料雜質有關，所以當載子濃度高時，材料雜質有關，所以當載子濃度高時，Auger復復合為主要因素，而低載子濃度時，由合為主要因素，而低載子濃度時，由SRH復合為主復合為主電子電洞產生電子電洞產生Generation與合復與合復Recombination (一一)Page 12電子電洞產生電子電洞產生Generation與合復與合

6、復Recombination (二二)With Diffused SurfacePage 13Page 14Page 15Page 16Page 17Page 18Page 19Page 20Standard Production Cell :1x10E135X10E14, at VocHigh Efficiency Cell :1x10E15-1X10E16Concentration PV :1X10E17Thin Crystalline Silicon Solar Cell :1x10E13Page 21WCT-120 : Silicon Wafer Lifetime Tester wit

7、h Suns-VocPage 22Page 23Page 24Page 25QSSPCPage 26Page 27Good Agreement between QSS-PC and MW-PCD ,but this was history! Now we need to understand the result in a more accurate wayPage 28Page 29QSS-PL and QSS-PCAi: Proportional constantBi: Radiative recombination coefficientBT ImagingPage 30Page 31C

8、apability and Restriction with long term viewPage 32TI-PL Temperature and Injection Dependent PhotoLuminescenceDLTS Deep Level Transient SpectroscopyTDLS Temperature Dependent ( Low Injection ) lifetime spectroscopyIDLS Injection Dependent lifetime spectroscopyI-LIT/CDI Illuminated Lock-In-Thermogra

9、phy, Carrier Density ImageFuture concerns about Carrier LifetimePage 33MultiTool I-LIT, CDI, SRIILITILITIlluminated Lock-In ThermographyI-LIT for Power Loss ImageLifetime ImageSheet Resistance ImagineFast I-LIT at One Second for Production In-Line MonitoringPage 34Electroluminescence for Characteris

10、ation of Solar CellsFigure 2: Visual image of a solar cell in a laminated module.Figure 3: Electroluminescence image of the same solar cell.Page 35SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 36SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING

11、INFRARED IMAGING METHODSPage 37SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 38SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 39SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODS

12、Page 40SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 41SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 42SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 43COMPARING LUMINES

13、CENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 44COMPARING LUMINESCENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 45COMPARING LUMINESCENC

14、E IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 46COMPARING LUMINESCENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 47PHOTOLUMINESCENCE IMAGING

15、 ON SILICON BRICKSPage 48PHOTOLUMINESCENCE IMAGING ON SILICON BRICKSPage 49PHOTOLUMINESCENCE IMAGING ON SILICON BRICKSPage 50Page 51Page 52Page 53Root Cause Analysis最根本最根本分析分析Page 54Page 55Page 56Page 57Page 58Page 59Local Series ResistanceLocal Junction BreakdownLocal Reverse Currents in Hot SpotsC

16、orrelated to Final Cell Efficiency through Fill FactorLIS-R1 is the fastest, highest resolution and most flexible Lab tool for root causes analysis Total Solution of Monitoring Full Wafer Carrier Lifetime for High Yield Rate and Cell EfficiencyPage 60光電流與載子光電流與載子Page 61Standard Production Cell :1x10E135X10E14, at VocHigh Efficiency Cell :1x10E15-1X10E16Concentration PV :1X10E17Thin Crystalline Silicon Solar Cell :1x10E13Page 62Page 63Page 64SPATIALLY RESOL