二氧化硅基质包埋硅纳米晶的微观结构和发光性能

1、August200920098CHINESEJOURNALOFMATERIALSRESEARCH1.3082660712.INRS-EMT,1650boulevardLionel-Boulet,Varennes,CanadaJ3X1S2(SiO2),.:(<5nm)Ostwald,(>10nm);8×1016cm23×1017cm2,5().,O472,O4831005-3093(2009)04-0352-05MicrostructureandopticalpropertiesofSinanocrystalsembeddedinSiO2lmWANGYiqian1

2、LIANGWenshuang1ROSSGuy21.TheCultivationBaseforStateKeyLaboratory,QingdaoUniversity,No.308,NingxiaRoad,Qingdao,2660712.INRS-EMT,1650boulevardLionel-Boulet,Varennes,Canada,J3X1S2*SupportedbytheScienticResearchFundingfortheIntroducedTalentsatQingdaoUniversityNo.06300701andNationalScienceandEngineeringR

3、esearchCouncil,CanadaNo.STPGP307205-04.ManuscriptreceivedJanuary8,2009;inrevisedformApril22,2009.KEYWORDSinorganicnon-metallicmaterials,Sinanocrystals,transmissionelectronmicroscopy,growthmechanism,photoluminescence,1.:,.,.,2*06300701(MBE)3(MS)4(PLD)5STPGP307205-04(PECVD)6.,200918;2009422.:,4:3537.2

4、68103×1017cm2).(1100).,.1h,500(5%)(95%),1h.Ostwald11,.;,/(quantum20m,Gatan691PIPSconnementeect)12,13,.JEM201014,15.FEG,200kV,0.19nm.,Gatan().(GIF).Ar488nm1.(1100),(100)21(a)1m.100keV(b)8×1016Si+(:8×1016,1×1017,1×1017cm2,1(a)8×1016cm2,(b)1×1017cm2(c)3×1017cm2;(

5、d);(e)Fig.1Dark-eldTEMimagesofthesampleswithaSiuenceof(a)8×1016cm2,(b)1×1017cm2and(c)3×1017cm2;(d)Selected-areaelectrondiractionpatterntakenfromthenanocrystalsembeddedinSiO2;(e)HRTEMimageoftheinterfacebetweenSisubstrateandtheSiO2lm3542(a)(b)Fig.2EELSspectraacquiredfromtheregionwiththe

6、nanocrystals(a)andwithoutthenanocrystals(b)1(c).3×1017cm2.,.1(d),a=0.543nm.,(Electronenergylossspectroscopy).2.2(a)SiL2,3,IIIII108115eV,SiO2SiL2,3.2(a),2(b)(I),100.8eV,Si2,3.L,.1(220).,110(1e).1(e),.,1(a)(b),.8×1016cm2(1a),3nm,75±5nm,140±10nm.2317cm21×10(1b),3.3nm.70±5n

7、m,140±10nm.1(c),50nm,240nm.nm222,:,.:,.:(sput-tering)(swelling).,.(high-resolutiontransmissionelectronmicroscopy).(1×1017cm2),3(a).:5nm,110;,.,Ostwald11,.,.,Ostwald.(>1×1017cm2),.3(b)(c).3(b)12nm,110.4,I;IIIIIIV(111),IIIII.,II,SF.:(100),(111).3(c).22nm,10110.10,111.1,2(tripletwin),

8、.:111,.16,(111)(111)=1.23J/m2),(100):3553(a),;,:(b);(c)Fig.3(a)TypicalHRTEMimageofSinanocrys-talsproducedwithlowimplantationdose;HRTEMimagesofthebiggernanocrystalsformedwithhighimplantationdose,theco-alescednanocrystalsshowingtheattachmentsofsmallparticlesto111facetsofatetra-hedralnanoparticle(b)and

9、anapproximate-diamond-shapednanoparticle(c)Fig.4PLspectraobtainedfromthesampleswithimplantationdosesof8×1016Si+/cm2and3×1017Si+/cm2,respectively(111)(100)=1.1(111).(111),(100).,.1718,.(100),.,8×10163×1017cm2,.,8×1016cm23×1017cm25.8×1016cm2,3nm,.,(),.3×1017cm2,

10、5nm.().3(<5nm)Ostwald,(>10nm).28×1016cm3×1017cm25.()35623.9G.Franzo,S.Boninelli,D.Pacici,F.Priolo,F.Iacona,C.Bongiorno,SensitizingpropertiesofamorphousSiclus-tersonthe1.54µmluminescenceofErinSi-richSiO2,1InternationalforTechnology2005,Roadmapwebsite:10F.Iacona,C.Bongiorno,C.Spinella,S.Boninelli,F.Priolo,thermaloxidelmsoncrystalline3S.Hayashi,S.Tanimoto,M.Fujii,K.Yamamo