半导体制程简介_(NXPowerLite)

1、 晶园制作 Wafer Creation 芯片制作 Chip Creation 后封装 Chip Packaging Poly Silicon Creation 1 目前半导体制程所使用的主要原料就是晶园 (Wafer)，它的主要成分为硅(Si)。 富含硅的物质非常普遍，就是沙子(Sand)，它 的主要成分为二氧化硅(SiO2)。 沙子经过初步的提炼，获得具有一定纯度的硅， 再经过一些步骤提高硅的纯度，半导体制程所 使用的硅需要非常高的纯度。 接着就是生成多晶硅(Poly Silicon)。 Poly Silicon Creation 2 采用一种叫做Trichlorosilane的物质(Si

2、HCl3) 作为溶剂，氢气作为反应环境，在钽(tantalum) 电热探针指引下，经过初步提炼的硅形成晶体。 这种过程需要多次，中途还会用到氢氟酸(HF) 这样剧毒的化学药品，硅的纯度也随着这个过 程而进一步被提高。 最后生成多晶硅的硅锭。 Poly Silicon Creation 3 Crystal Pulling 1 多晶硅硅锭中晶体的晶向是杂乱无章的，如果 使用它来制作半导体器件，其电学特性将非常 糟糕，所以必须把多晶硅制作成单晶硅，这个 过程可以形象地称作拉单晶(Crystal Pulling)。 将高纯度的多晶硅碾碎，放入石英坩埚，加高 温到1400C，注意反应的环境是高纯度的惰

3、性气体氩(Ar)。 精确的控制温度，单晶硅就随着晶种被拉出来 了。 Crystal Pulling 2 Crystal Pulling 3 制作完毕的单晶 硅按照半径的大 小来区分，目前 正在使用的有： 150mm(6) 200mm(8) 300mm(12) 正在发展的有： 400mm(16) Wafer Slicing 单晶硅具有统一的晶向， 在把单晶硅切割成单个晶 园(Wafer)的时候，首先 要在单晶硅锭上做个记号 来标识这个晶向。 通常标识该晶向的记号就 是所谓Flat或者Notch (平 边、凹槽)。 6 Wafer 6的晶园通常采用所谓“平边”的方法来标识 晶向。 8 Wafer

4、8的晶园采用Notch。 12, 16, Wafer 采用Notch，为什么呢？猜想。 Lapping 10sec N-WellP-Well P-VT P-pthru GATE OX SAC OXIDE REMOVE50:1 HF GATE1_OX STEP-1 :SPM+HF STEP-2: APM+HPM 800C,58A, WET DUAL GATE OXIDE PHOTO GATE OXIDE ETCH / CRS130:1:7 BOE, H2SO4+H2O2 GATE2 OXStep-1: SPM Step-1: APM+HPM 750C,WET 23A 58 thick gate

5、oxide23 thin gate oxide 2000A poly Final 70 A P1 DEP SiON DEP 320A HM COATING PEOX 150A Poly PHOTOADI 0.17+/-0.017 HM DRY ETCH ASHER AND WET STRIP HF 100:1/ H2SO4+H2O2 Poly ETCHAEI 0.15+/-0.015 POLY WET STRIPHF 100:1/ H2SO4+H2O2 SION REMOVE50:1 HF + H3PO4 Poly Re_Oxidation1015C,21A RTO N-WellP-Well

6、P1 DEP NLL Photo Implant: Pocket implantIn 3.0E13 / 130K / T30R445 NLDD implantAs 1.1E15/003K / T0 Resistor strip PLL Photo Pocket implantAs 2.9E13 / 130K / T30R445 PLDD implantBF2 1.6E14 / 4K / T0 Resistor strip N-WellP-Well N NPP PLH Photo LDD implant: ( 3.3V& 1.8V ) F2.50E14_005K_T0 Resist strip

7、LDD RTA 950C,10s NLH Photo LDD1 ImplantAs 3.00E13_050K_T00 LDD2 ImplantP 5.00E13_030K_T00 Resist strip N-WellP-Well NNPP Nitride Spacer N-WellP-Well NNPP Clean LINING 150 TEOS 700C,150A(+-15A) SiN SPACER SiN 300A(+-30A) COMPOSITE SPACER TEOS 1000A(+-100A) SPACER ETCH 300A SN/1000A TEOS Clean/ Oxide

8、Strip H2SO4+H2O2 / HF 100:1, 1min N+ SN Photo N+ implant1A 5.50E15_060K_T00 N+ implant2P 1.50W14_035K_T00 Resist Strip P+ SP Photo P+ Implant1B 3.50E15_005K_T00 P+ Implant2B 3.00E13_015K_T00 Resist Strip N-WellP-Well P+N+N+P+ STD Clean SAB Deposistion CAP OX, 350+-30A S/D RTA Annealing1020C, 20sec ,

9、N2 SAB Photo Salicide Block Etchdry/WET ETCH Resist Strip N-WellP-Well Sal Blk PE TEOS P+P+N+N+ Pre-CO Saliside Dip (100:1 HF 1min.) Salicide Deposition (Co 75A/TiN 200A) Salicide 1st RTA (530oC 30sec N2 ) N-WellP-Well CO Sailcide P+P+N+N+ Salicide Selective Etch (sc1+m2.) Salicide 2nd RTA (850oC 30

10、sec N2 ) Salicide Transistor PE-SION 400A DEP BPTEOS Deposition 1500A BPSG FLOW 620C 30min CR CLEAN PETEOS deposition 8500A Ox CMP for ILD(6500A) CR CLEAN N-WellP-Well P+P+N+N+ 1.5k SABPSG 8.5k PETEOS 400 SION CONTACT ETCH PE-SION 600A DEP ARC CT Photo Contact etch Asher Resist Strip N-WellP-Well P+

11、P+N+N+ W-PLUG CONT GLUE LAYER ETCH100/IMP-TI100/CVD-TIN50 Silicide annealing (690C,60s) 3000+/-300 W CVD DEP W CMP for IMD WTi/TiN N-WellP-Well P+P+N+N+ CT Contact Formation 0.22um N+ Contact Chain 0.22um P2 Contact Chain METAL1 DEPOSITION MET1 GLUE (200 Ti/250 TiN) MET1 AL (3000 AlCu/50 Ti/300 TiN)

12、 WTi/TiN N-WellP-Well P+P+N+N+ Met 1 50 Ti / 300 TiN 3 k AlCu 200 Ti / 250 TiN METAL1 ETCH Inorganic BARC SION DEP M1 Photo Metal etch Resist Strip N-WellP-Well P+P+N+N+ Met 1 DR(L/S) = 0.23/0.23 HDP OXIDE FOR IMD1 5k HDP USG & 11.5k PETEOS dep Met 1 N-WellP-Well P+P+N+N+ 5k HDP 11.5k PETEOS HDP Oxi

13、de Gapfill Capability 0.18m Metal5 at DR (0.28/0.28) VIA 1 PHOTO&ETCH Via1 Photo Via etch Asher Resist Strip Met 1 N-WellP-Well P+P+N+N+ W-PLUG VIA GLUE LAYER ETCH 180 /100Ti/50TiN (IMP/CVD) 3000+/-300 W CVD W CMP for IMD Met 1 N-WellP-Well P+P+N+N+ 100 Ti / 50 TiN Via Formation METAL 2: DEP & ETCH

14、MET2 GLUE (200 Ti/250 TiN) MET2 AL (4000 AlCu/50 Ti/300 TiN) Inorganic BARCSION DEP 320A+-32 M2 Photo Metal etch Resist Strip DR(L/S) = 0.28/0.28 Met 1 N-WellP-Well P+P+N+N+ 160 Ti / 70 TiN Met 2 50 Ti / 300 TiN 4k AlCu 200 Ti / 250 TiN VIA 2: DEP & ETCH 6k HDP USG & 11.5k PETEOS depOx CMP for IMD P

15、E-SiON 600A Via2 Photo Via etch Resist Strip Met 1 N-WellP-Well P+P+N+N+ Met 2 METAL 3 DEP& ETCH W-PLUG VIA GLUE LAYER ETCH 130 /160Ti/70TiN (IMP/CVD) 3.3k W CVD W CMP for IMD MET3 GLUE (200 Ti/250 TiN) MET3 AL (8000 AlCu/50 Ti/600 TiN) Inorganic BARC SION DEP 320A+-32 M3 Photo Metal etch Resist Str

16、ip Met 1 N-WellP-Well P+P+N+N+ Met 2 Met 3 DR: 0.28/0.28 VIA 3: DEP&ETCH Met 1 N-WellP-Well P+P+N+N+ Met 2 Met 3 6k HDP USG & 11.5k PETEOS depOx CMP for IMD PE-SiON 600A Via3 Photo Via etch Resist Strip DR: 0.26/0.26 METAL 4 DEP & ETCH W-PLUG MET4 GLUE (200 Ti/250 TiN) MET4 AL (4000 AlCu/50 Ti/600 T

17、iN) Inorganic BARC SION DEP 320A+-32 M4 Photo Metal etch Resist Strip VIA GLUE LAYER ETCH 130 /160Ti/70TiN (IMP/CVD) 3.3k W CVD W CMP for IMD Met 1 N-WellP-Well P+P+N+N+ Met 2 Met 3 Met 4 DR: 0.28/0.28 VIA 4: DEP&ETCH 6k HDP USG & 11.5k PETEOS depOx CMP for IMD PE-SiON 600A Via4 Photo Via etch Resis

18、t Strip Met 1 N-WellP-Well P+P+N+N+ Met 2 Met 3 Met 4 DR: 0.26/0.26 METAL 5: DEP&ETCH W-PLUG MET5 GLUE (200 Ti/250 TiN) MET5 AL (4000 AlCu/50 Ti/600 TiN) Inorganic BARC SION DEP 320A+-32 M5 Photo Metal etch Resist Strip VIA GLUE LAYER ETCH 130 /160Ti/70TiN (IMP/CVD) 3.3k W CVD W CMP for IMD Met 1 N-WellP-Well P+P+N+N+ Met 2 Met 3 Met 4 Met 5 DR: 0.28/0.28 VIA 5: DEP&ETCH N-WellP-Well P+P+N+N+ Met 1 Met 2 Met 3 Met 4 Met 5 6k HDP USG & 11.5k PETEOS CMP for IMD PE-SiON 600A Via5 Photo Via etch Resist Strip DR: 0.36/0.35 METAL 6: DEP&ETCH W-PLU