2019年【管理精品】附件二上海交大学报英文版投稿格式示例.doc

1、Surface MicromachinedZHANG San-feng * * (张三丰),HUANG Fei-hong (黄飞鸿),(Research Institute of .,Shanghai Jiao Tong University, Shanghai 200030, China )Abstract: For radio freque ncy applicati ons, mini aturized in tegrated in ductor of high performa nee is very importa nt. However, mini aturized in tegr

2、ated in ductors ofte n suffer from low Q-factor and/or fres ( self-resonant frequency ). In this paper, Key words: sole noid in ductor ; RF MEMS ; quality factor ; electroplati ngDocument code: AIntroductionTo meet requireme nts in mobile com muni cati ons and microwave in tegrated circuits, the pas

3、sive RF (radio freque ncy) in ductors are used in a variety of importa nt applicati ons. Many results have bee n reported to improve the performa nee of microin ductors. However,In this paper, we proposed a new method for fabricating.1 Fabrication1 FabricationFig.1 shows a brief description of the f

4、abrication process.-.Fig.1 shows a brief description of the fabrication process.-.(e5WlUffl4SubstrateSeed layerPhotoresistFig.1. Schematic of the simplified fabrication process.Copper2 Results and discussionFig.2 shows the SEM photograph of a fabricated-.3 ConclusionIn this work,References1 C. L. Yu

5、ng, Weijia ng Zeng, Pick Hong Ong, et al. A con cise process tech no logy for 3-Dsuspe nded radio freque ncy micro-i nductors on silic on substrateJ. IEEE Electro n Device Lett., 2002, 23:700-703.2 Kazuhisa Itoi, Masakazu Sato, Hiroshi Abe, et al. On-chip high-Q sole noid in ductorsembedded in WL-CS

6、P J. Proceedings of HDP, 2004, pp.105-108.3 C.S.Li n, Y.K.Fa ng, S.F.Che n, et al. A deep submicrometer CMOS process compatible high-Qair-gap sole noid in ductor with laterally laid structure J. IEEE Electr on Device Lett., 2005, 26:160-162.4 A. M. Nikn ejad and R. G. Meyer. An alysis, desig n, and

7、optimizati on of spiral in ductor andtransformers for Si RF IC J. IEEE J. Solid-State Circuits, 1998, 33(10) :1470-1481.5 Yoon-Jun Kim and Mark G . Alle n. Surface micromach ined sole noid in ductors for highfreque ncy applicatio ns J. IEEE Trans. Comp., Packag., Man ufact. Techn ol, 1998,21:26-33.AcknowledgementsThis work is financially supported by Keygrant Project (No.03 ).The authors thank for experimental help, measureme nts.of Chinese Ministry of Education f