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模拟电子技术基础(西安邮电大学)知到智慧树章节测试课后答案2024年秋西安邮电大学第一章单元测试

Whichofthefollowingisnotacommonlyusedsemiconductormaterial'?(

A:carbonB:leadC:germaniumD:silicon

答案:leadThecharacteristicofanidealdiodearethoseofaswitchthatcanconductcurrent(

.

A:inbothdirectionsbutinonlyonedirectionatatimeB:dependsonthecircuititisusedinC:inbothdirectionsD:inonedirectiononly

答案:inonedirectiononlyWhenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill(

.

A:increaseB:maketheresistancestableagainstvariationduetotemperatureC:decrease

答案:decreaseThepiecewiselinearmodel,equivalentcircuitofthediodeconsistsof(

).

A:abattery,asmallresistor,andtheidealdiodeB:abatteryandtheidealdiodeC:ajunctioncapacitor,abattery,asmallresistor,andtheidealdiodeD:theidealdiode

答案:abattery,asmallresistor,andtheidealdiodeWhenap-njunctionisreverse-biased,itsjunctionresistanceis

).

A:determinedbythecomponentsthatareexternaltothedeviceB:constantlychangingC:lowD:high

答案:high

第二章单元测试

Whatisthevalueofthevoltagedroppedacrossforward-biasedsilicondiodesthatareconnectedinparallelwitheachother?

).

A:11.3VB:1.4VC:0.35VD:0.7V

答案:0.7VTheresistorvoltageandresistorcurrentinthiscircuitare(

).

A:11V,11mAB:2V,11mA

C:11V,2mAD:10V,5mA

答案:11V,11mAWhichofthefollowingcircuitsisusedtoeliminateaportionofasignal?(

).

A:ClipperB:DamperC:VoltagemultiplierD:Voltagedivider

答案:ClipperThecircuitshownhereisa(

).

A:seriesclipper

B:parallelclipperC:seriesclamperD:shuntclamper

答案:parallelclipperTheZenerdiodemustbeoperatedsuchthat(

).

A:B:theappliedvoltageisgreaterthan

C:

islessthanthespecified

D:Allofthese

答案:Allofthese

第三章单元测试

Intheactiveregion,thebase-emitterjunction

).

A:andthebase-collectorjunctionsarebothforward-biasedB:andthebase-collectorjunctionsarebothreverse-biasedC:isreverse-biasedwhilethebase-collectorjunctionisforward-biasedD:isforward-biasedwhilethebase-collectorjunctionisreversed-biased

答案:isforward-biasedwhilethebase-collectorjunctionisreversed-biasedABJThasmeasureddccurrentvaluesof=0.1mAand=8.0mA.WhenIBisvariedby100μA,ICchangesby10mA.Whatisthevalueoftheβacforthisdevice?(

).

A:100B:10C:80D:800

答案:100WhenaBJTisoperatingintheactiveregion,thevoltagedropfromthebasetotheemitterisapproximatelyequaltothe(

)。

A:emittervoltageB:diodedrop(about0.7V)

C:basecurrenttimesthebaseresistorD:basebiasvoltage

答案:diodedrop(about0.7V)

BJTsarecommonlyusedas(

).

A:theprimarycomponentsinrectifiersB:theprimarycomponentsinamplifiersC:seriesdampercircuits

答案:theprimarycomponentsinamplifiersTheconditionwhereincreaseinbiascurrentwillnotcausefurtherincreasesincollectorcurrentiscalled(

).

A:activeoperationB:cutoffC:saturation

答案:saturation

第四章单元测试

WhenaBJTisbiasedinthecutoffregionthecollector-to-emittervoltageistypicallyequalto(

).

A:0.03VB:theemittervoltageC:thecollectorcurrenttimesthecollectorresistorD:thecollectorsupplyvoltage

答案:thecollectorsupplyvoltage

Calculatethecollector-emittervoltageforthisemitter-stabilizedcircuit.(

A:0.1335VB:10.68VC:4.32VD:14.24V

答案:4.32VThedifferencebetweentheresultingequationsforanetworkinwhichannpntransistorhasbeenreplacedbyapnptransistoris(

).

A:thevalueofβB:thevaluesoftheresistorsC:thesignassociateswiththeparticularquantities

答案:thesignassociateswiththeparticularquantitiesThetermquiescentmeans(

).

A:midpoint-biasedB:activeC:inactiveD:atrest

答案:inactiveVoltage-dividerbiasstabilityis(

).

A:dependentonthecollectorresistorB:dependentonalphaC:dependentofbetaD:independentofbeta

答案:independentofbeta

第五章单元测试

Giventhisconfiguration,determinetheinputimpedanceifVS=40mV,Rsense=0.5kΩ,andtheinputcurrentis20μA.(

A:582kΩB:5.822MΩC:1.5MΩD:1,500Ω

答案:1,500ΩThetransistormodelreplacesthe(

withthejunctiondiode'sacresistance.

A:collector-emitterjunctionB:emitter—basejunction

C:collector-basejunction

答案:emitter—basejunction

Calculatethevoltagegainforthiscircuit.

A:

-7.91B:-8.4C:-137.25D:-16.34

答案:-137.25Atransistoramplifierhasaninputsignalappliedtoitsemitterterminalandanoutputsignaltakenfromitscollectorterminal.Theamplifierisa(n)(

).

A:emitterfollowerB:common-baseamplifierC:common-emitteramplifierD:common-collectoramplifier

答案:common-baseamplifierThevoltagegainofaverywell-designedcommoncollectoramplifierconfiguration,usingapnptransistor,is(

).

A:about-0.9B:intherange-0.95to-0.99C:about0.9D:intherange0.95to0.99

答案:intherange0.95to0.99

第六章单元测试

Shockley'sequationdefinesthe(

oftheFETandareunaffectedbythenetworkinwhichthedeviceisemployed.

A:input/outputcharacteristicsB:

characteristicsC:draincharacteristicsD:transfercharacteristics

答案:transfercharacteristicsForann-channeldepletionMOSFET,=8mAand=-6V.If=0.8V,whatisthevalueofthedraincurrent,?

A:8mAB:10.28mAC:10.25μAD:6mA

答案:10.28mATheregionoftheJFETdraincurvethatliesbetweenpinch-offandbreakdowniscalled(

).

A:thesaturationregionB:theconstant-voltageregionC:theohmicregion

答案:thesaturationregionInthefamilyofFETs,youcanexpecttofind

).

A:unipolarstructureB:an

n-channeltypeC:a

p-channeltype

答案:unipolarstructure;an

n-channeltype;a

p-channeltypeFETsusually(

).

A:arelesssensitivetotemperaturechangethanBJTsB:haveahigherinputimpudencethanBJTsC:aresmallerinconstructionthanBJTs

答案:arelesssensitivetotemperaturechangethanBJTs;haveahigherinputimpudencethanBJTs;aresmallerinconstructionthanBJTs

第七章单元测试

Thisgraphicalsolutionrepresents(

).

A:voltage-dividerbiasforan

n-channelJFETB:selfbiasforan

n-channelJFETC:fixedbiasforan

n-channelJFET

答案:selfbiasforan

n-channelJFETGenerally,itisgooddesignpracticeforlinearamplifierstohaveoperatingpointsthatcloseto(

).

A:areclosetosaturationlevelB:thecut-offregionC:themidpointoftheloadline

答案:themidpointoftheloadlineWhichofthefollowingbiasingcircuitscanbeusedwithE-MOSFETs?

A:drain-feedbackbiasB:zerobiasC:selfbiasD:current-sourcebias

答案:drain-feedbackbiasTheprimarydifferencebetweenJFETsanddepletion-typeMOSFETsis(

).

A:depletion-typeMOSFETscanhaveonlypositiveofB:JFETscanhavepositivevaluesof

andlevelsofdraincurrentthatexceedC:depletion-typeMOSFETscanhavepositivevaluesof

andlevelsof

thatexceedD:JFETscanhaveonlypositivevaluesof

答案:depletion-typeMOSFETscanhavepositivevaluesof

andlevelsof

thatexceedAJFETcanbebiasedinseveraldifferentways.Thecommonmethod(s)ofbiasingann-channelJFETis(are)(

).

A:voltage-dividerbiasconfigurationB:fixed-biasconfigurationC:self-biasconfiguration

答案:voltage-dividerbiasconfiguration;fixed-biasconfiguration;self-biasconfiguration

第八章单元测试

TheFETversionoftheBJT'scommon-emitterconfigurationisthe(

circuit.

A:common-sourceB:common-currentC:common-drainD:common-gate

答案:common-sourceCalculatetheinputimpedanceforthisFETamplifier.

A:B:

=woulddependonthedraincurrentC:D:

答案:Designthiscircuitforavoltagegainof10.Youhavetocalculatethevalueofresistorand.Itisdesiredthatthetransistoroperatewitharelativelyhighvalueof.Forthisdevice,ahighvalueofisdefinedas.(

A:B:C:D:

答案:The(

amplifierhashighinputimpedance,lowoutputimpedance,andlowvoltagegain.

A:common-gateB:common-sourceC:common-drain

答案:common-drainThe(

FETamplifierhaslowinputimpedance,highoutputimpedance,andhighvoltagegain.

A:common-sourceB:common-drainC:common-gate

答案:common-gate

第九章单元测试

Calculatethelowfrequencybreakpointduetothecapacitor

forthisBJTamplifier.(

A:B:C:D:

答案:Ifseveralidenticalstagesofamplifiers,eachhavingtheexactsameupperandlowercutofffrequencies,areconnectedincascade,thenthebandwidthoftheresultingamplifierwill(

).

A:beequaltothesumofalltheindividualbandwidthsB:remainunchangedC:increaseD:decrease

答案:decreaseA3-dBdropinβoccursat(

).

A:B:C:D:

答案:NegativedBvaluesrepresent(

).

A:powerlossesB:powervaluesthatdonotchangeC:powergain

答案:powerlossesAnamplifierhasamidbandpowergainof24,500.WhatisthevalueofthepowergainindBforthecircuit?(

A:87.78dBB:43.9dBC:4.39dB

答案:43.9dB

第十章单元测试

Underdifference-modeoperation,thedifference-modevoltagegainforthiscircuitis(

).

A:80B:40C:0.0397D:0.08

答案:40Theoperationalamplifierwillonlyslightlyamplifysignals(

).

A:thataredifferentonboththeinputsB:thatarecommononboththeinputsC:whenthesupplyvoltagesaremorethen±25VD:whenthesupplyvoltagesarelessthen±5V

答案:thatarecommononboththeinputsTheinvertingandnoninvertinginputstoanop-ampareusedtodrivea(n)(

amplifier.

A:differentialB:noninvertingC:invertingD:open-loop

答案:differentialWhenagivenop-amphasacommon-modeinputof10V,theoutputofthedeviceis10V.

Whenthedevicehasadifferentialinputof2mV,theoutputofthedeviceis10V.WhatistheCMPRofthedevice?(

A:5,000,000:1B:5:1C:1000:1D:5000:1

答案:5000:1Thebandwidthofanamplifieris(

).

A:

therangeoffrequenciesfoundusing

B:therangeoffrequenciesoverwhichgainremainsrelativelyconstant

C:therangeoffrequenciesbetweenthelowerandupper3dBfrequencies

答案:

therangeoffrequenciesfoundusing

;therangeoffrequenciesoverwhichgainremainsrelativelyconstant

;therangeoffrequenciesbetweenthelowerandupper3dBfrequencies

第十一章单元测试

Iftheinputvoltageis0.25Vandtheoutputis-2.5V,thevalueof

mustbe(

).

A:40.0kΩB:20.0kΩC:5.0kΩD:16.0kΩ

答案:20.0kΩTheoutputvoltage,VO,isgivenby(

).

A:B:C:

答案:Asummingintegratorisanop-ampintegratorthathas(

).

A:multipleinputresistorsandfeedbackcapacitorsB:multipleinputresistorsC:multiplefeedbackcapacitors

答案:multipleinputresistorsandfeedbackcapacitorsAsecondorderlow-passfilterhasahigh-endroll-offof(

).

A:40dB/decadeB:20dB/octaveC:60dB/octaveD:6dB/decade

答案:40dB/decadeAnactivefilterthatprovidesaconstantoutputforinputsignalsaboveiscalledanideal(

).

A:bandpassfilterB:low-passfilterC:high-passfilter

答案:high-passfilter

第十二章单元测试

AclassBamplifier(notpush-pull)(

).

A:conductsthrough180°oftheinputwaveformB:conductsthroughlessthan180°oftheinputwaveformC:conductsthrough360°oftheinputwaveformD:conductsbetween180°and360°degreesoftheinputwaveform,dependingontheamountofdcbias

答案:conductsthrough180°oftheinputwaveformCrossoverdistortioninclassBamplifiersispreventedby(

).

A:usingcomplementary-symmetrytransistorsB:biasingthetransistorsdeeplyintocutoffC:increasingtheloadresistanceD:biasingthetransistorsslightlyabovecutoff

答案:biasingthetransistorsslightlyabovecutoffThemaximumtheoreticalefficiencyofanRC-coupledclassAamplifieris(

).

A:25%B:78.5%C:50%D:99%

答案:25%Poweramplifiersaretypicallyusedtodrivelowimpedanceloads.(

A:错B:对

答案:对Thepowerthatanamplifierdeliverstoaloadisequaltothedifferencebetweent

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