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模拟电子技术基础(西安邮电大学)知到智慧树章节测试课后答案2024年秋西安邮电大学第一章单元测试
Whichofthefollowingisnotacommonlyusedsemiconductormaterial'?(
)
A:carbonB:leadC:germaniumD:silicon
答案:leadThecharacteristicofanidealdiodearethoseofaswitchthatcanconductcurrent(
)
.
A:inbothdirectionsbutinonlyonedirectionatatimeB:dependsonthecircuititisusedinC:inbothdirectionsD:inonedirectiononly
答案:inonedirectiononlyWhenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill(
)
.
A:increaseB:maketheresistancestableagainstvariationduetotemperatureC:decrease
答案:decreaseThepiecewiselinearmodel,equivalentcircuitofthediodeconsistsof(
).
A:abattery,asmallresistor,andtheidealdiodeB:abatteryandtheidealdiodeC:ajunctioncapacitor,abattery,asmallresistor,andtheidealdiodeD:theidealdiode
答案:abattery,asmallresistor,andtheidealdiodeWhenap-njunctionisreverse-biased,itsjunctionresistanceis
(
).
A:determinedbythecomponentsthatareexternaltothedeviceB:constantlychangingC:lowD:high
答案:high
第二章单元测试
Whatisthevalueofthevoltagedroppedacrossforward-biasedsilicondiodesthatareconnectedinparallelwitheachother?
(
).
A:11.3VB:1.4VC:0.35VD:0.7V
答案:0.7VTheresistorvoltageandresistorcurrentinthiscircuitare(
).
A:11V,11mAB:2V,11mA
C:11V,2mAD:10V,5mA
答案:11V,11mAWhichofthefollowingcircuitsisusedtoeliminateaportionofasignal?(
).
A:ClipperB:DamperC:VoltagemultiplierD:Voltagedivider
答案:ClipperThecircuitshownhereisa(
).
A:seriesclipper
B:parallelclipperC:seriesclamperD:shuntclamper
答案:parallelclipperTheZenerdiodemustbeoperatedsuchthat(
).
A:B:theappliedvoltageisgreaterthan
C:
islessthanthespecified
D:Allofthese
答案:Allofthese
第三章单元测试
Intheactiveregion,thebase-emitterjunction
(
).
A:andthebase-collectorjunctionsarebothforward-biasedB:andthebase-collectorjunctionsarebothreverse-biasedC:isreverse-biasedwhilethebase-collectorjunctionisforward-biasedD:isforward-biasedwhilethebase-collectorjunctionisreversed-biased
答案:isforward-biasedwhilethebase-collectorjunctionisreversed-biasedABJThasmeasureddccurrentvaluesof=0.1mAand=8.0mA.WhenIBisvariedby100μA,ICchangesby10mA.Whatisthevalueoftheβacforthisdevice?(
).
A:100B:10C:80D:800
答案:100WhenaBJTisoperatingintheactiveregion,thevoltagedropfromthebasetotheemitterisapproximatelyequaltothe(
)。
A:emittervoltageB:diodedrop(about0.7V)
C:basecurrenttimesthebaseresistorD:basebiasvoltage
答案:diodedrop(about0.7V)
BJTsarecommonlyusedas(
).
A:theprimarycomponentsinrectifiersB:theprimarycomponentsinamplifiersC:seriesdampercircuits
答案:theprimarycomponentsinamplifiersTheconditionwhereincreaseinbiascurrentwillnotcausefurtherincreasesincollectorcurrentiscalled(
).
A:activeoperationB:cutoffC:saturation
答案:saturation
第四章单元测试
WhenaBJTisbiasedinthecutoffregionthecollector-to-emittervoltageistypicallyequalto(
).
A:0.03VB:theemittervoltageC:thecollectorcurrenttimesthecollectorresistorD:thecollectorsupplyvoltage
答案:thecollectorsupplyvoltage
Calculatethecollector-emittervoltageforthisemitter-stabilizedcircuit.(
)
A:0.1335VB:10.68VC:4.32VD:14.24V
答案:4.32VThedifferencebetweentheresultingequationsforanetworkinwhichannpntransistorhasbeenreplacedbyapnptransistoris(
).
A:thevalueofβB:thevaluesoftheresistorsC:thesignassociateswiththeparticularquantities
答案:thesignassociateswiththeparticularquantitiesThetermquiescentmeans(
).
A:midpoint-biasedB:activeC:inactiveD:atrest
答案:inactiveVoltage-dividerbiasstabilityis(
).
A:dependentonthecollectorresistorB:dependentonalphaC:dependentofbetaD:independentofbeta
答案:independentofbeta
第五章单元测试
Giventhisconfiguration,determinetheinputimpedanceifVS=40mV,Rsense=0.5kΩ,andtheinputcurrentis20μA.(
)
A:582kΩB:5.822MΩC:1.5MΩD:1,500Ω
答案:1,500ΩThetransistormodelreplacesthe(
)
withthejunctiondiode'sacresistance.
A:collector-emitterjunctionB:emitter—basejunction
C:collector-basejunction
答案:emitter—basejunction
Calculatethevoltagegainforthiscircuit.
(
)
A:
-7.91B:-8.4C:-137.25D:-16.34
答案:-137.25Atransistoramplifierhasaninputsignalappliedtoitsemitterterminalandanoutputsignaltakenfromitscollectorterminal.Theamplifierisa(n)(
).
A:emitterfollowerB:common-baseamplifierC:common-emitteramplifierD:common-collectoramplifier
答案:common-baseamplifierThevoltagegainofaverywell-designedcommoncollectoramplifierconfiguration,usingapnptransistor,is(
).
A:about-0.9B:intherange-0.95to-0.99C:about0.9D:intherange0.95to0.99
答案:intherange0.95to0.99
第六章单元测试
Shockley'sequationdefinesthe(
)
oftheFETandareunaffectedbythenetworkinwhichthedeviceisemployed.
A:input/outputcharacteristicsB:
characteristicsC:draincharacteristicsD:transfercharacteristics
答案:transfercharacteristicsForann-channeldepletionMOSFET,=8mAand=-6V.If=0.8V,whatisthevalueofthedraincurrent,?
(
)
A:8mAB:10.28mAC:10.25μAD:6mA
答案:10.28mATheregionoftheJFETdraincurvethatliesbetweenpinch-offandbreakdowniscalled(
).
A:thesaturationregionB:theconstant-voltageregionC:theohmicregion
答案:thesaturationregionInthefamilyofFETs,youcanexpecttofind
(
).
A:unipolarstructureB:an
n-channeltypeC:a
p-channeltype
答案:unipolarstructure;an
n-channeltype;a
p-channeltypeFETsusually(
).
A:arelesssensitivetotemperaturechangethanBJTsB:haveahigherinputimpudencethanBJTsC:aresmallerinconstructionthanBJTs
答案:arelesssensitivetotemperaturechangethanBJTs;haveahigherinputimpudencethanBJTs;aresmallerinconstructionthanBJTs
第七章单元测试
Thisgraphicalsolutionrepresents(
).
A:voltage-dividerbiasforan
n-channelJFETB:selfbiasforan
n-channelJFETC:fixedbiasforan
n-channelJFET
答案:selfbiasforan
n-channelJFETGenerally,itisgooddesignpracticeforlinearamplifierstohaveoperatingpointsthatcloseto(
).
A:areclosetosaturationlevelB:thecut-offregionC:themidpointoftheloadline
答案:themidpointoftheloadlineWhichofthefollowingbiasingcircuitscanbeusedwithE-MOSFETs?
(
)
A:drain-feedbackbiasB:zerobiasC:selfbiasD:current-sourcebias
答案:drain-feedbackbiasTheprimarydifferencebetweenJFETsanddepletion-typeMOSFETsis(
).
A:depletion-typeMOSFETscanhaveonlypositiveofB:JFETscanhavepositivevaluesof
andlevelsofdraincurrentthatexceedC:depletion-typeMOSFETscanhavepositivevaluesof
andlevelsof
thatexceedD:JFETscanhaveonlypositivevaluesof
答案:depletion-typeMOSFETscanhavepositivevaluesof
andlevelsof
thatexceedAJFETcanbebiasedinseveraldifferentways.Thecommonmethod(s)ofbiasingann-channelJFETis(are)(
).
A:voltage-dividerbiasconfigurationB:fixed-biasconfigurationC:self-biasconfiguration
答案:voltage-dividerbiasconfiguration;fixed-biasconfiguration;self-biasconfiguration
第八章单元测试
TheFETversionoftheBJT'scommon-emitterconfigurationisthe(
)
circuit.
A:common-sourceB:common-currentC:common-drainD:common-gate
答案:common-sourceCalculatetheinputimpedanceforthisFETamplifier.
(
)
A:B:
=woulddependonthedraincurrentC:D:
答案:Designthiscircuitforavoltagegainof10.Youhavetocalculatethevalueofresistorand.Itisdesiredthatthetransistoroperatewitharelativelyhighvalueof.Forthisdevice,ahighvalueofisdefinedas.(
)
A:B:C:D:
答案:The(
)
amplifierhashighinputimpedance,lowoutputimpedance,andlowvoltagegain.
A:common-gateB:common-sourceC:common-drain
答案:common-drainThe(
)
FETamplifierhaslowinputimpedance,highoutputimpedance,andhighvoltagegain.
A:common-sourceB:common-drainC:common-gate
答案:common-gate
第九章单元测试
Calculatethelowfrequencybreakpointduetothecapacitor
forthisBJTamplifier.(
)
A:B:C:D:
答案:Ifseveralidenticalstagesofamplifiers,eachhavingtheexactsameupperandlowercutofffrequencies,areconnectedincascade,thenthebandwidthoftheresultingamplifierwill(
).
A:beequaltothesumofalltheindividualbandwidthsB:remainunchangedC:increaseD:decrease
答案:decreaseA3-dBdropinβoccursat(
).
A:B:C:D:
答案:NegativedBvaluesrepresent(
).
A:powerlossesB:powervaluesthatdonotchangeC:powergain
答案:powerlossesAnamplifierhasamidbandpowergainof24,500.WhatisthevalueofthepowergainindBforthecircuit?(
)
A:87.78dBB:43.9dBC:4.39dB
答案:43.9dB
第十章单元测试
Underdifference-modeoperation,thedifference-modevoltagegainforthiscircuitis(
).
A:80B:40C:0.0397D:0.08
答案:40Theoperationalamplifierwillonlyslightlyamplifysignals(
).
A:thataredifferentonboththeinputsB:thatarecommononboththeinputsC:whenthesupplyvoltagesaremorethen±25VD:whenthesupplyvoltagesarelessthen±5V
答案:thatarecommononboththeinputsTheinvertingandnoninvertinginputstoanop-ampareusedtodrivea(n)(
)
amplifier.
A:differentialB:noninvertingC:invertingD:open-loop
答案:differentialWhenagivenop-amphasacommon-modeinputof10V,theoutputofthedeviceis10V.
Whenthedevicehasadifferentialinputof2mV,theoutputofthedeviceis10V.WhatistheCMPRofthedevice?(
)
A:5,000,000:1B:5:1C:1000:1D:5000:1
答案:5000:1Thebandwidthofanamplifieris(
).
A:
therangeoffrequenciesfoundusing
B:therangeoffrequenciesoverwhichgainremainsrelativelyconstant
C:therangeoffrequenciesbetweenthelowerandupper3dBfrequencies
答案:
therangeoffrequenciesfoundusing
;therangeoffrequenciesoverwhichgainremainsrelativelyconstant
;therangeoffrequenciesbetweenthelowerandupper3dBfrequencies
第十一章单元测试
Iftheinputvoltageis0.25Vandtheoutputis-2.5V,thevalueof
mustbe(
).
A:40.0kΩB:20.0kΩC:5.0kΩD:16.0kΩ
答案:20.0kΩTheoutputvoltage,VO,isgivenby(
).
A:B:C:
答案:Asummingintegratorisanop-ampintegratorthathas(
).
A:multipleinputresistorsandfeedbackcapacitorsB:multipleinputresistorsC:multiplefeedbackcapacitors
答案:multipleinputresistorsandfeedbackcapacitorsAsecondorderlow-passfilterhasahigh-endroll-offof(
).
A:40dB/decadeB:20dB/octaveC:60dB/octaveD:6dB/decade
答案:40dB/decadeAnactivefilterthatprovidesaconstantoutputforinputsignalsaboveiscalledanideal(
).
A:bandpassfilterB:low-passfilterC:high-passfilter
答案:high-passfilter
第十二章单元测试
AclassBamplifier(notpush-pull)(
).
A:conductsthrough180°oftheinputwaveformB:conductsthroughlessthan180°oftheinputwaveformC:conductsthrough360°oftheinputwaveformD:conductsbetween180°and360°degreesoftheinputwaveform,dependingontheamountofdcbias
答案:conductsthrough180°oftheinputwaveformCrossoverdistortioninclassBamplifiersispreventedby(
).
A:usingcomplementary-symmetrytransistorsB:biasingthetransistorsdeeplyintocutoffC:increasingtheloadresistanceD:biasingthetransistorsslightlyabovecutoff
答案:biasingthetransistorsslightlyabovecutoffThemaximumtheoreticalefficiencyofanRC-coupledclassAamplifieris(
).
A:25%B:78.5%C:50%D:99%
答案:25%Poweramplifiersaretypicallyusedtodrivelowimpedanceloads.(
)
A:错B:对
答案:对Thepowerthatanamplifierdeliverstoaloadisequaltothedifferencebetweent
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