集成电路的基本制造工艺

上节课内容要点双极集成电路的基本工艺双极集成电路中元件结构2024/11/6pn+n-epin+P-Sin+-BLCBESP+P+双极集成电路的基本工艺2024/11/6P-SiTepiCBEpn+n-epin+P-SiP+P+Sn+-BLTepiAA’TBL-uptepi-oxxmcxjc四层三结结构的双极晶体管双极集成电路中元件结构2024/11/6ECB相关知识点隐埋层的作用、电隔离的概念、寄生晶体管本节课内容

MOS集成电路的工艺

P阱CMOS工艺

BiCMOS集成电路的工艺

N阱CMOS工艺双阱CMOS工艺2024/11/6MOS晶体管的动作

MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)MOSFET的基本结构2024/11/6siliconsubstratesourcedraingateoxideoxidetopnitridemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶体管的立体结构2024/11/6在硅衬底上制作MOS晶体管siliconsubstrate2024/11/6siliconsubstrateoxidefieldoxide2024/11/6siliconsubstrateoxidephotoresist2024/11/6ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide2024/11/6非感光区域siliconsubstrate感光区域oxidephotoresist2024/11/6Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影2024/11/6siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀2024/11/6siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶2024/11/6siliconsubstrateoxideoxidegateoxidethinoxidelayer2024/11/6siliconsubstrateoxideoxidepolysilicongateoxide2024/11/6siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate2024/11/6siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringresiststrip.sourcedrainionbeam2024/11/6siliconsubstrateoxideoxidegategatesourcedraindopedsilicon2024/11/6自对准工艺在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入2024/11/6siliconsubstratesourcedraingate2024/11/6siliconsubstrategatecontactholesdrainsource2024/11/6siliconsubstrategatecontactholesdrainsource2024/11/6完整的简单MOS晶体管结构siliconsubstratesourcedraingateoxideoxidetopnitridemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide2024/11/6CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+2024/11/6主要的CMOS工艺VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si2024/11/6掩膜1：P阱光刻P-wellP-well

N+

N+

P+

P+

N+

P+N-SiP2024/11/6具体步骤如下：1．生长二氧化硅（湿法氧化）：Si(固体)+2H2OSiO2（固体）+2H22024/11/6氧化2024/11/62．P阱光刻：涂胶腌膜对准曝光光源显影2024/11/62024/11/6硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3．P阱掺杂：2024/11/62024/11/6离子源高压电源电流积分器离子束2024/11/6掩膜2：光刻有源区有源区：nMOS、PMOS

晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well淀积氮化硅光刻有源区场区氧化去除有源区氮化硅及二氧化硅SiO2隔离岛2024/11/6有源区depositednitridelayer有源区光刻板N型p型MOS制作区域(漏-栅-源)2024/11/6P-well1.淀积氮化硅：氧化膜生长（湿法氧化）P-well氮化膜生长P-well涂胶P-well对版曝光有源区光刻板2.光刻有源区：2024/11/6P-well显影P-well氮化硅刻蚀去胶3.场区氧化：P-well场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区SiO22024/11/6掩膜3：光刻多晶硅P-well去除氮化硅薄膜及有源区SiO2P-wellP+N+N+P+N-SiP-well栅极氧化膜多晶硅栅极生长栅极氧化膜淀积多晶硅光刻多晶硅2024/11/6P-well生长栅极氧化膜P-well淀积多晶硅P-well涂胶光刻多晶硅光刻板P-well多晶硅刻蚀2024/11/6掩膜4

：P+区光刻

1、P+区光刻

2、离子注入B+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。

3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+2024/11/6P-wellP+P-wellP+P+硼离子注入去胶2024/11/6掩膜5

：N+区光刻

1、N+区光刻

2、离子注入P+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。

3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+2024/11/6P-wellN+P-wellP+P+磷离子注入去胶P+P+N+N+2024/11/6掩膜6

：光刻接触孔1、淀积PSG.2、光刻接触孔3、刻蚀接触孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（PSG)2024/11/6掩膜6

：光刻接触孔P-wellP+P+N+N+淀积PSGP-wellP+P+N+N+光刻接触孔P-wellP+P+N+N+刻蚀接触孔P-wellP+P+N+N+去胶2024/11/62024/11/6掩膜7

：光刻铝线1、淀积铝.2、光刻铝3、去胶P-wellP-wellP+P+N+N+2024/11/6P-wellP+P+N+N+铝线PSG场氧栅极氧化膜P+区P-wellN-型硅极板多晶硅N+区2024/11/6Example:Intel0.25micronProcess5metallayersTi/Al-Cu/Ti/TiNPolysilicondielectric2024/11/6InterconnectImpactonChip2024/11/6掩膜8

：刻钝化孔CircuitPADCHIP双阱标准CMOS工艺P+p-epipwellnwellp+n+gateoxideAl(Cu)tungstenSiO2SiO2TiSi2fieldoxide增加器件密度防止寄生晶体管效应（闩锁效应）p-epiP阱n+STITiSi2STI深亚微米CMOS晶体管结构STISTISTIN阱n-n+n-p+p-p+p-源/漏扩展区浅槽隔离侧墙多晶硅硅化物2024/11/6功耗驱动能力CMOS双极型Bi-CMOSBiCMOS集成电路工艺2024/11/6BiCMOS工艺分类以CMOS工艺为基础的BiCMOS工艺以双极工艺为基础的BiCMOS工艺。2024/11/6以P阱CMOS工艺为基础的BiCMOS工艺NPN晶体管电流增益小；集电极的串联电阻很大;NPN管C极只能接固定电位，从而限制了NPN管的使用2024/11/6以N阱CMOS工艺为基础的BiCMOS工艺NPN具有较薄的基区，提高了其性能；N阱使得NPN管C极与衬底隔开，可根据电路需要接电位集电极串联电阻还是太大，影响双极器件的驱动能力在现有N阱CMOS工艺上增加一块掩膜板2024/11/6

以N阱CMOS工艺为基础的改进BiCMOS工艺使NPN管的集电极串联电阻减小5

6倍；使CMOS器件的抗闩锁性能大大提高2024/11/6三、后部封装（在另外厂房）（1）背面减薄（2）切片（3）粘片（4）压焊：金丝球