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Pulsed

LaserDeposition(PLD)HuangYanWangJianlinGe

WenZhaoYuanYunYuUNIVERSITYOFSCIENCEANDTECHNOLOGYOFCHINAOutlineThinFilmDepositionPulsedLaserDeposition

a)Comparedtoothergrowthtechniquesb)ExperimentalSetupc)AdvantagesandDisadvantagesBasicTheoryofPLDOpportunitiesThinFilmDepositionTransferatomsfromatargettoavapor(orplasma)toasubstrateThinFilmDepositionTransferatomsfromatargettoavapor(orplasma)toasubstrateAfteranatomisonsurface,itdiffusesaccordingto:D=Doexp(-eD/kT)eDistheactivationenergyfordiffusion~2-3eVkTisenergyofatomicspecies.Wantsufficientdiffusionforatomstofindbestsites.Eitheruseenergeticatoms,orheatthesubstrate.Waystodepositthinfilms

targetsubstrateEvaporation(Molecularbeamepitaxy-MBE)

targetsubstrateChemicalvapordeposition-CVDAr+substrategasSputteringLowenergydeposition(MBE):~0.1eV

maygetislandingunlessyoupickrightsubstrateorheatsubstratetohightemperaturesHighenergydeposition(Sputtering~1eV)smootherfilmsatlowersubstratetemperatures,butmaygetintermixingLowenergydeposition(MBE):~0.1eV

maygetislandingunlessyoupickrightsubstrateorheatsubstratetohightemperaturesHighenergydeposition(Sputtering~1eV)smootherfilmsatlowersubstratetemperatures,butmaygetintermixingPulsedLaserDepositionTarget:metals,semiconductors…Laser:UV,10nspulsesVacuum:AtmospherestoultrahighvacuumFilmthickness:typically100-200nm.Depositionrate:0.1nm/pulsePulsedLaserDepositionPulsedLaserDepositionSlot6DEPOSITIONCHAMBERVIDEOCAMERATOPWINDOWROTATIONMOTOREXCIMERLASERl

=248nmHEATERWITHTHERMOCOUPLEBEAMCONDITIONING&FOCUSING

YBCOTARGET

PRESSURETRANSDUCERVALVESTOVACUUM&O2WINDOWSSERVO-CONTROLLEDMIRRORSUBSTRATEPLUMEINSERTABLEBEAMATTENUATORWINDOW晑晑

晑晑MANUALEMSENSORAUTOMATEDEMSENSORRAMANSENSORSlot6Slot13AdvantagesofPLDExacttransferofcomplicatedmaterialsFlexible,variety,easytoimplementEasytopreparetargetEpitaxyatlowtemperatureFastgrowthrateDisadvantagesofPLDUnevencoverageHighdefectorparticulateconcentrationNotwellsuitedforlarge-scalefilmgrowthMechanismsanddependenceonparametersnotwellunderstoodProcessesinPLDSubsurfaceBoilingLasersuperheatssubsurfacelayerbeforesurfacereachesevaporationpointSurfacebreaksapartintolarge(micron-sized)globuleparticleswhenthesubsurfaceexpands.

ExpansionofplumecausessuddendropinpressurejustabovesurfaceShockwavepullsdropletsofliquidoffofsurfacePressureExpulsionExfoliationThermalshockcausesirregularitiesinsurfacetobreakoffSurfacemorphologyPreviousablationParticulatesarerandomlyshapedProcessparameterssubstratetemperaturethetarget-substratedistanceambientoxygenpressureandannealingtemperaturetargetconsistencypulselaserenergylaserfrequencyCharacteristicpropertiesofY2SiO5:CethinfilmsgrownwithPLD

E.Coetsee,J.J.Terblans,H.C.Swart,PhysicaB404(2009)4431–4435Si（110）substrate600℃

Theonlyvariable:AmbientgasspeciesAr/O2/N2Constant:248nmKrF

Pulsefrequency8HzPulsesnumber4000Laserfluence(1.6±0.2)J/cm2Y2SiO5:CestandardphosphorpowdersDifferent

nanostructure:substratetemperatureof600℃andanoxygenbackgroundpressureof

100Pa.SEMimagesofArF-depositedfilmsSEMimagesofKrF-depositedfilmspencil-likestructuresacolumnarstructureZincoxidenanostructuresgrownbypulsedlaserdepositionD.Valerinietal,ApplPhysA,2007Thegoodcrystallinequalityonlythe(002)and(004)diffractionpeaksoftheZnO

wurtzitecrystalstructurearevisible.depositedin1PaofoxygenataSisubstratetemperatureof600℃byusingthetwoablationwavelengths.OpportunitiesUltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionUltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesMBEPLDHigherqualityfilmsbettermagneticpropertiesMagneticMomentoffccFe(111)UltrathinFilmsbyUltrafastDepositiononCu(111)J.Shenetal.,Phys.Rev.Lett.,80,pp.1980-1983UltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesDirectwritingofelectroniccomponents-inair!RapidprocessrefinementNomasks,preforms,orlongcycletimesTrue3-Dstructurefabricationpossible

Singlelaserdoessurfacepretreatment,spatiallyselectivematerialdeposition,surfaceannealing,componenttrimming,ablativemicromachining,dicingandvia-drilling

DARPAMICEProgram

(U.S.DefenseAdvancedResearchProjectsAgency

MesoscopicIntegratedConformalElectronicsprogram)UltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesOvertwicethenaturalenrichmentofB10/B11,Ga69/Ga71inBNandGaNfilmsPlasmacentrifugebytoroidalandaxialmagneticfieldsof0.6MG!IsotopeEnrichmentinLaser-AblationPlumesandCommensuratelyDepositedThinFilms

P.P.Pronko,etal.PhysRev.Lett.,83,pp.2596-2599Ultrahighquality

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