认识Mask以及其制作流程

认识Mask以及其制作流程演示文稿目前一页\总数二十五页\编于三点优选认识Mask以及其制作流程目前二页\总数二十五页\编于三点TheRoleofMaskinICIndustry

DESIGNMASKWAFERTESTINGASSEMBLY目前三页\总数二十五页\编于三点HowDoesMaskWorkinWaferFAB

-------Stepper目前四页\总数二十五页\编于三点HowDoesMaskWorkinWaferFAB

-------Scanner目前五页\总数二十五页\编于三点RawMaterialofMask

BlankBIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSM目前六页\总数二十五页\编于三点SizeofBlank

5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?目前七页\总数二十五页\编于三点BlankComponent

BinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilm

PhaseShiftLayer

Substrate目前八页\总数二十五页\编于三点BlankQzCharacteristic

RigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9.43.70.5目前九页\总数二十五页\编于三点BlankQzCharacteristic

OpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblank目前十页\总数二十五页\编于三点HowtoTransferDesigntoMask?

WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtch目前十一页\总数二十五页\编于三点Front-endProcess

BlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7目前十二页\总数二十五页\编于三点Front-endProcess

DryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure

(EB1,EB2,EB3

DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment

(SFD2500,ASP5500)H+DryEtch(Gen3,Gen4)

AEI,Re-etchStrip,ASI目前十三页\总数二十五页\编于三点PellicleComponent

PellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlass目前十四页\总数二十五页\编于三点WhatPellicleDo?

TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLight目前十五页\总数二十五页\编于三点ParticleImmunityControl

Particlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DM----MagnificationN.A.----NumericalApertureoftheLensForglasssideparticle,T=2.3mmD1T1T2D2目前十六页\总数二十五页\编于三点MaskQualityControl

C.D.DefectRegistration目前十七页\总数二十五页\编于三点CD(criticaldimension)measurement目前十八页\总数二十五页\编于三点DefectTypeOpaquespotParticleProtrusionIntrusionContaminationPinholeMissingARGlassfractureBreakGlassseedBridgeSolventspotHardDefectSoftDefectMissSize目前十九页\总数二十五页\编于三点HowtoDoMaskDefectInspect

目前二十页\总数二十五页\编于三点MaskLayoutExemplification

Normal

++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcodeMulti-Chip

++++FiducialTestKeyTestLineScribeLineGlobalMarkQACell++AChipBChipCChipDChip+目前二十一页\总数二十五页\编于三点ThePrinciple

ofSTARlightInspectTheModelinSMICMaskShop(SL3UV)canonlydetectpatternsideSTAR:SynchronousTrans.AndReflected目前二十二页\总数二十五页\编于三点WhatisRegistration

目前二十三页\总数二十五页\编于三点RegistrationResultExemplification

Mask: 6”,t=0.25” QuartzMea