光通信论坛-源杰半导体-光通讯 InP 激光器进展-20230224-对外版

光通讯InP激光器进展012AlAl激光器采用直接带隙半导体MatthiasMatthiasPospiech,ShaLiu,“LaserDiodesanIntroduction”,May20043III-V族半导体光源激光器完美适配光纤通信ticesTsukuruKATSUYAMA,“DevelopmentofSemiconductorLaserforOpticalCommunication.”SEITECHNICALREVIEW,no.69,Oct.2009基础材料“III-V族半导体”的外延晶体生长突破p于InP衬底上成长InGaAsP或是AlInGaAs作为激光器的增益发光层，所输出的光波长能满足光纤可利用的低损耗窗口1260nm~1675nmp利用MOCVD于InP上进行四元材料的外延，需具备精准控制材料组份、厚度维度(<10nm)与精度(+/-0.25A)的能力p外延能力的限制，国内的芯片厂或外延厂，具备光通信激光器有源区晶圆外延能力的厂家少于5间，而具备高速激光器有源区晶圆外延能力更是少于3间，需在此基础材料的制作上有所突破45电光转换过程输出调制光信号输入调制电信号HighPowerCWDFB电光转换过程输出调制光信号输入调制电信号HighPowerCWDFBLD优化光功率优化调制区带宽HighHighSpeedEML优优化外调区消光比PowerS21PowerER1<S21PoweroptimizationoptimizationdBoptimizationoptimizationdBFrequencyf3dBFrequencyf3dB<f3dB(newdesign)Current6Hitachi/OclaroOFC2013/2014FinisarOFC2015LumentumOFC2020 25Hitachi20cooled2828RGOFC2013Hitachi/OclaroOFC2013/2014FinisarOFC2015LumentumOFC2020 25Hitachi20cooled2828RGOFC2013Oclaro27/20C-temp25.825.8RGOFC2014发布脊型波导工艺简单、可靠性优势BitRateandOrganization脊型波导工艺简单、可靠性优势BitRateandOrganizationBandwidthTemp.Rate Temperature---GHz---GbpsGBd掩埋型波导高局限因子低临界电流密度Fujitsu24cooled5050RS-掩埋型波导高局限因子低临界电流密度CooledGbitsCooledGbits5656Finisar29cooled5656BHOFC201550GbpsNRZHitachi30/22C-temp5050RS-BHISLC2014Cooled100GbpsPAM4Oclaro34/24C-temp到100Gbit/s比特率2828GBdcooled/C-TempDML5656GBdcooledDML556GBdC-TempDMLHitachiOFC20141112GBdC-TempDML78ActiveRegionx2fRC2R ff"22+f2y222f"2willbediscussedinparasiticcircuitsectiony=ActiveRegionx2fRC2R ff"22+f2y222f"2willbediscussedinparasiticcircuitsectiony=K.f"+f3dB_max=2冗∝=ai+lnthConfinementfactorgainDifferentialParasiticCircuitParasiticCircuitnDesignDecreasingactiveregionvolumeTemp.dep.fLimitfactorsofmodulationbandwidth1.RClimit2.Dampingfactor(g)orKfactor3.Relaxationfrequency(fr)gratingntumWellBarrierInPSubstrateN-metalRelaxationRelaxationoscillationfrequency(fr)1/2f1/2fr=2I−Ith 9wofDFBLDgratingwofDFBLDgratingntumWellBarrierInPSubstrateN-metalLightAlInGaAsQWmaterial1.Largeconductionbandoffset2.SmallvalencebandoffsetPerformanceofAlInGaAsQWmaterial1.Highopticalpowerathightemperature2.Increaseindifferentialgain(highspeedmodulation)1.Electronoverfolwathightemp.2.Nonuniformholeinjection1.Goodelectronconfinementathightemp.2.UniformholeinjectionAActiveRegionParasiticCircuitMaterialDEc/DEgAdvantageQuantumWellBarrierInGaAsPInGaAsP~0.35GoodreliabilityAlInGaAsAlInGaAs~0.721.Hightemperature2.HighspeedBarrierDEc/DEg=0.35DEvalalDEc/DEg=0.72RClimitmit+frnhancef3dBdecreasingfRCLimitofFrequencyResponseRClimitmit+frnhancef3dBdecreasingfAActiveRegionParasiticCircuitR2fRC2R2fRC2f f2−f"22+22f2y2dBdB−25−30−35051015202530BlockingRegionIntensity(a.u)inIthIntensity(a.u.)ChangeinIth25GCWDM4Intensity(a.u)inIthIntensity(a.u.)ChangeinIth25GCWDM4−2025G%0%−30−40−50−60−700462918137518352293275332123670413345985063AgingTimehour)0−20−30−40−50−60inSE25GCWDM4ngeinSE25G%0%0462918137518352293275332123670413345985063AgingTimehour)25GCWDM4SR25G25GCWDM412601280130013201340Wavelength(nm)2525GLWDM412701280129013001310132013301340Wavelength(nm)MeasuredOpticalEyeat26Gbaud/s(Yuanjie50GPAM4DML)关键指标vs.关键设计与⼯艺技术关键指标1：高功率，低功耗技术要求：高增益有源区＋光栅设计技术要求：出光端SSC技术技术要求：波导区＋光栅区设计关键指标4：P-SIDEDOWNMOUNTING技术要求：二次外延＋光刻均匀性技术技术要求：波导区＋光栅区设计RononRononOpticalPower✓✓✓PowerConsumption✓✓✓Reliability✓✓✓✓Non-hermetic✓KeyParametersInternallossWall-plugefficiencySmallDivergeAngleFacetPassivation#1ActiveRegion✓✓#2Grating✓✓#3DopingProfile✓✓#4SpotSizeCon.✓#5PassivationMaterial✓#3dopingprofileiveRegion#2gratingSSCCouplingCouplingTypeLaserengine+gratingcouplinggeV-geV-Spot-SizeConverterLightC50°CC50°C864220000050100150200250Current(mA)geV86420018.5dBm1310nmCWDFBLDforgeV86420018.5dBm1310nmCWDFBLDforC-temp(DR4Application)LLightC70mWW775°C0100200300400Current(LD(FR4Application)LLight LightLightDnmaterialhighdifferentialgainbyandbarriermaterialhighdifferentialgainbyandbarrierdesignAlInGaAs、QWüGratingRegion(SHBeffect)：Muti-phaseshiftedgratingtosuppressSHBüWaveguideRegion(frlimitand