自动化专业英语4课件

PART1ElectricalandElectronicEngineeringBasicsSection4PowerSemiconductorDevicesNewWordsandExpressions

LanguagepointsComplementNewWordsandExpressionsconvertern.转换器，换流器，变流器matrixn.模型，矩阵dioden.二极管，半导体二极管thyristorn.晶闸管triacn.三端双向晶闸管GTO门极可关断晶闸管BJT双极结型晶体管powerMOSFET电力MOS场效应晶体管SIT静态感应晶体管NewWordsandExpressionsIGBT绝缘栅双极型晶体管MCTMOS控制晶闸管IGCT集成门极换向晶闸管rectificationn.整流feedbackn.反馈freewheelingn.单向传动snubbern.缓冲器，减震器intrinsicadj.固有的，体内的，本征NewWordsandExpressionsforwardbiased正向偏置conductionn.

导电,传导reversebiased反向偏置leakagecurrent漏电流thresholdn.门限，阈限，极限breakdownn.击穿，雪崩recoveryn.恢复schottkydiode肖基特二极管NewWordsandExpressionsworkhorsen.重载，重负荷thyratronn.闸流管breakovern.导通latchingcurrent闭锁电流holdingcurrent保持电流phasecontrolled相控的asymmetricadj.不对称的forcecommutated强制换向NewWordsandExpressionsSMPS开关电源BLDM无刷直流电动机steppermotor步进电动机hybridn.混合emittern.发射极saturationn.饱和LanguagePoints[1]Powersemiconductordevicescons-titutetheheartofmodernpowerelectronicapparatus.Theyareusedinpowerelec-tronicconversionintheformofamatrixofon-offswitches.Andtheswitchingmodepowerconversiongiveshighefficiency.LanguagePoints[3]Theyarealsousedinfeedbackandthefreewheelingfunctionsofconvertersandsnubbers.AtypicalpowerdiodehasP-I-Nstructure,thatis,itisaP-Njunctionwithanearintrinsicsemiconductorlayer(I-layer)inthemiddletosustainreversevoltage.LanguagePoints[4]Ifthereversevoltageexceedsathre-sholdvalue,calledthebreakdownvoltage,thedevicegoesthroughavalanchebreak-down,whichiswhenreversecurrentbecomeslargeandthediodeisdestroyedbyheatingduetolargepowerdissipationinthejunction.LanguagePoints[5]Thyristors,orsilicon-controlledrectifiers(SCRs)havebeenthetraditionalworkhorsesforbulkpowerconversionandcontrolinindustry.Themoderneraofsolid-statepowerelectronicsstartedduetotheintroductionofthisdeviceinthelate1950s.LanguagePoints[6]Often,itisafamilynamethatincludesSCR,TRIAC,GTO,MCT,andIGCT.Thy-ristorscanbeclassifiedasstandard,orslowphase-control-typeandfast-switching,voltage-fedinverter-type.Theinverter-typehasrecentlybecomeobsolete.LanguagePoints[7]Basically,thyristorisathree-junctionP-N-P-Ndevice,whereP-N-PandN-P-Ncomponenttransistorsareconnectedinregenerativefeedbackmode.Thedeviceblocksvoltageinboththeforwardandreversedirection(symmetricblocking).LanguagePoints[8]Atriacshasacomplexmultiple-junctionstructure,butfunctionally,itisanintegrationofapairofphase-controlledthyristorsconnectedininverse-parallelonthesamechip.LanguagePoints[9]Awell-designedRCsnubberisessen-tialforatriaccircuit.Triacsareusedinlightdimming,heatingcontrol,alliance-typemotordrives,andsolid-staterelayswithtypically50/60Hzsupplyfrequency.LanguagePoints[11]GTOsareavailablewithasymmetricandsymmetricvoltage-blockingcapabilities,whichareusedinvoltage-fedandcurrent-fedconverters,respectively．[12]GTOsareusedinmotordrives,staticVARcompensators(SVCs),andAC/DCpowersupplieswithhighpowerratings.Whenlarge-powerGTOsbecameavailable,theyoustedtheforce-commutated,voltage-fedthyristorinverters.LanguagePoints[13]Unlikethedevicesdiscussedsofar,apowerMOSFET(metal-oxidesemi-conductorfield-effecttransistor)isaunipolar,majoritycarrier,“zerojunction”,voltage-controlleddevice．[14]MOSFETsareextremelypopularinlow-voltage,low-power,andhigh-frequen-cyswitchingapplications,includeswitchingmodepowersupplies,brushlessDCmo-tors,steppermotordrives,andsolid-stateDCrelays.LanguagePoints[15]Theintroductionofinsulatedgatebipolartransistorsinthemid-1980swasanimportantmilestoneinthehistoryofpowersemiconductordevices．TheyareextremelypopulardevicesinpowerelectronicsuptomediumpowerrangeandareappliedextensivelyinDC/ACdrivesandpowersupplysystems.TheyoustedBJTsintheupperrange,andarecurrentlyoustingGTOsinthelowerpowerrange.LanguagePoints[16]AnIGBTisbasicallyahybridMOS-gatedturn-on/offbipolartransistorthatcombinestheadvantagesofbothaMOSFETandBJT.ItsarchitectureisessentiallysimilartothatofaMOSFET,exceptanadditionalP+layerhasbeenaddedatthecollectorovertheN+drainlayeroftheMOSFET.LanguagePoints[17]AnMOS-controlledthyristor,asthenameindicates,isathyristor-like,trigger-into-conductionhybriddevicethatcanbeturnedonoroffbyashortvoltagepulseontheMOSgate.Thedevicehasamicrocellconstruction,wherethousandsofmicrodevicesareconnectedinparallelonthesamechip.Thecellstructureissomewhatcomplex.LanguagePoints[18]TheMCTwascommerciallyintroducedin1992,andcurrently,medium-powerdevicesareavailablecommercially.Thefutureacceptanceofthedeviceremainsuncertainatthispoint.[19]Basically,itisahigh-voltage,high-power,hard-driven,asymmetric-blockingGTOwithunityturn-offcurrentgain.LanguagePoints[21]IGCThasbeenappliedinpowersystemintertieinstallationsandmedium-powerindustrialdrives.ExercisesI.TranslatethefollowingintoChinese

Allthesimplecircuitelementsthatwillbeconsideredintheworkthatfollowscanbeclassifiedaccordingtotherelationshipofthecurrentthroughtheelementtothevoltageacrosstheelement.Forinstance,ifthevoltageacrosstheelementisdirectlyproportionaltothecurrentthroughit,oru=ki,weshallcalltheelementaresistor.Othertypesofsimplecircuitelementshaveaterminalvoltagewhichisproportionaltothetimederivativeortheintegralwithrespecttotimeofthecurrent.ThereExercisesI.TranslatethefollowingintoChinese

arealsoelementsinwhichthevoltageiscompletelyindependentofthecurrentorthecurrentiscompletelyindependentofthevoltage;thesearetheindependentsources.Furthermore,weshallneedtodefinespecialkindsofsourcesinwhichthesourcevoltageorcurrentdependsuponacurrentorvoltageelsewhereinthecircuit;suchsourceswillbetermeddependentsourcesorcontrolledsources.VocabularyCharacteristicI一、前缀(prefixes)1.anti-/counter-

反，抗，防，逆，耐

antivirus

防病毒；

anti-interference抗干扰；anti-phase

反相；

counterclockwise逆时针方向的（地）；countercurrent反向电流。2.

auto-

自动、自

autotransformer

自耦变压器；

autocoder自动编码器；

automodulation自调制；

automobile自动车。VocabularyCharacteristicI3.bi-

双，重

bipolarrelay

双极继电器；

bilateral两边的，双边的；双金属。4.co-

共，同，一起，相互

coaxialcable

同轴电缆；

cosine

余弦。5.de-

表示相反动作

demodulator解调器；

deform

变形。6.deci-

表示十分之一，分

decimal十进制；decibel分贝;decimeter分米VocabularyCharacteristicI7.di-双，偶，两

diode

二极管；dipole

偶极子；

dioxide

二氧化物。8.dis-

表示相对单词的反义词

displace

位移；

disconnect解开，断开。9.equi-同等，均

equipartition均分；equilibrium均衡，平衡。10.hydro-

水，氢化

hydrodynamic

水力的，水压的，流体动力学的；

hydroelectric水力发电的。11.

hyper-

高，超，重，极度

VocabularyCharacteristicI12.in-

表示否定

inaccurate不精确的；invariable不变的。13.inter-

相互，际间

internet互联网；interchange

互换；

interface

界面；intercitytrain

城际列车。14.mal-不，失

malfunction失灵，故障；malformation畸形；

maltreat滥用，乱用。15.mega-兆，百万

megawatt兆瓦；megaton百万吨级。VocabularyCharacteristicI16.micro-微观，微型，百万分之一

microelectronics

微电子学；

microcomputer微型计算机；

microfilm

微缩胶卷；micrometer微米；

microwave微波。17.mini-

小

minicomputer小型计算机；

minibus微型公共汽车。18.multi-多

multi-frequency多频率。19.over-过，超，太

overfrequency

超频；overcharge

过度充电。VocabularyCharacteristicI20.photo-光，光电，光敏

photocell光电池；photohead光电传感头；

photoreceptor感光器。21.post-后

postfault故障后。22.pre-

在前，预先

preheat

预热；precondition

前提，先决条件。23.semi-

半

semiconductor

半导体。24.sub-

子，亚，低，次，副

subsystem子系统，分系统；substation变电站

subcode

子码。VocabularyCharacteristicI25.tele-远，电

telemetry遥测术；telecommunication

电信；

teleswitch遥控开关；telecontrol

遥控。26.thermo-

热

thermostat

恒温器；thermoelectric热电的；

thermo-fuse

热熔丝。27.tri-

三

triangle

三角形。

28.ultra-

超，过

ultra-high-frequency超高频；ultrasonic超声波29.un-表示相反的意思

unequal不等；unvarying不变的。VocabularyCharacteristicII一、后缀(suffixes)1.–able

形容词的词尾，表示“……的”

stable

稳定的；reliable

可靠的；

comparable可比较的。2.–al

形容词词尾，表示“……的”

digital

数字的；functional

功能的，函数的。3.-ance/-ence

名词词尾

capacitance电容；resistance电阻；

reactance

电抗；existence

存在。4.–ary

形容词词尾，表示“……”

elementary

初步的；momentary

瞬息的。VocabularyCharacteristicII5.–en

一般是形容词+en构成，表示“使……”

soften软化；

harden

使……变硬。6.-er/-or

表示“机器、设备、物件等”

air-oilbooster

气-液增压器；

aircompressor

空气压缩机。7.–free

形容词词尾，表示“无……的”，“免于……的”

loss-free

无损耗的；dust-free

无尘的。8.–ics

名词词尾，表示学科名称

physics

物理学；mathematics

数学；

electronics电子学。VocabularyCharacteristicII9.–ity

构成抽象名词，表示“性，度”

stability

稳定性；reliability可靠性；

feasibility

可行性。10.–ive

形容词词尾，表示“……的”