改善良率完整标准格式

改善良率优秀报告格式1Agenda2目的與現況1原因分析2改善措施3實驗確認4標準化及殘留問題53ImproveVVVTV730yieldandO/SdifferenceonBR93KS.目的與現況原因分析改善措施實驗確認標準化因L/Bpad本身測久或不當外力因素造成金屬層氧化造成測試contact及產品特別concerncontact電壓傳導值，contactpoor造成highYielddifference、highO/SandQAfail，FTE必須常態性介入Socketmaintain，以維持yield，造成Downtime及outputlost。DefectInformation:Customer：ATiTester：HP93KSDeviceType：2A5-0719004-00<RV730>BodySize：BGA29*29Platform：HP93KSContactforce：30.8g/pinSockettype：WUYA7,WV1A7Handler：ATChandler(30°C)LoadBoard：AT-L/B-506目的問題描述4目的與現況原因分析改善措施實驗確認標準化AT-L/B-506(Padswearingout)Touchdown:1.18KKLoadboarddefinelifetimedefine1KKL/Bpadwearingoutduetotouchdownlongtimeandimpactcontactpoor(pad&pogopin)Root-Cause5增加一層0.1mmSMM於socketplungerbottom與L/Bpad間去增加contact傳導值及彌補金屬層退化造成poorcontact.目的與現況原因分析改善措施實驗確認標準化SocketFrameLBLBPad0.1mmSMMSocketplungerbottom0.1mmSMM斷斷續續測了約100K.SMM情況如左.狀況沒變差改善措施6以數據來看.0.1mmSMM可有效改善LBpadwearingoutissue所造成的O/SandrelatedcontactHbin<DACfail>，但尚需考量Devicebodysize,pogopintypestatus等因素.目的與現況原因分析改善措施實驗確認標準化With0.1mmSMMWithout0.1mmSMMConclusion:Thisdatasuggestustousethe0.1mmSMMofimplement0.1mmSMMcoverpoorpadandgetstableperformance7TestMeasurementComparisonByDC&Analogtestmeasurement,PogopinwithoutSMM與PogopinwithSMM並無顯著差異。DeviceType:2A5-0719004-00<RV730>Program:RV730_XTMVD_A13F1P_170revEDevice:Goldenunitx1ea目的與現況原因分析改善措施實驗確認標準化DC&AnalogTestSuitesLimitsWithSMM+newpogopin(MeasuredValue)WithoutSMM+newpogopin(MeasuredValue)O/S(PPMU)[100.000000mV,700.000000mV][-501.286000mV..-425.416000mV][-500.353000mV..-424.638000mV]VregH_3600mV(DVM)[1.700000V,2.050000V]1851.899mV1852.210mVVregH_1500mV[1.350000V,1.650000V]1519.673mV1519.517mVVregH_2400mV[1.700000V,2.050000V]1865.119mV1865.663mVVregL_2400mV[1.550000V,2.050000V]1865.041mV1865.041mVOsc_xin_leak(PPMU)[-30.000000uA,-2.000000uA]-11.176uA-11.164uAOsc_xout_leak[-550.000000uA,-100.000000uA]-318.186uA-318.631uASidd_VCCPA[-0.100000uA,45.000000uA]20.283000uA22.942000uASidd_VCC[0.100000uA,250.000000uA]196.644000uA191.280000uASidd_VCCIN_G[10.000000uA,400.000000uA]153.162000uA154.713000uADiddA[2.000000mA,5.000000mA]3742.906000uA3751.370000uADiddPA[10.000000mA,40.000000mA]21.967mA21.946mADIDD_VCCIN_romspeed[0.500000mA,10.000000mA]2.010mA2.008mAIIL[-1.000000uA,1.000000uA][-0.006000uA..0.076000uA][-0.004000uA..0.075000uA]IIL_XIN[-10.000000uA,10.000000uA]-0.001uA-0.001uAIIL_XOUT[-10.000000uA,10.000000uA]0.001uA0.001uAIIH_digital[-1.000000uA,1.000000uA][-0.005000uA..0.005000uA][-0.005000uA..0.004000uA]IIL_ANA_DCIN[-0.100000uA,0.100000uA][-0.002000uA..0.002000uA][-0.001000uA..0.003000uA]IIH_ANA_DCIN[-0.100000uA,0.100000uA][-0.002000uA..0.003000uA][0.002000uA..0.004000uA]IIL_ANA[-0.500000uA,0.500000uA][0.164000uA..0.265000uA][0.161000uA..0.252000uA]CLK_100K_Osc[80.000000kHz,120.000000kHz]105.220148kHz105.216796kHzBCLK[2.010000MHz,2.090000MHz]2.047853MHz2.047857MHzPLL1_C066_div6[8.570000MHz,8.970000MHz]8.874665MHz8.874665MHzsd0_lin0_lout0(SNR)[40.000000,90.000000]61.10455461.567552sd0_lin0_lout0(Amp)[0.600000,1.500000]1.4192691.419649sd0_lin0_lout0(Freq)[0.975000,1.025000]0.9980.998sd0_mip_spoutp(SNR)[35.000000,90.000000]63.74344263.799942sd0_mip_spoutp(Amp)[0.500000,1.500000]1.0867231.092743sd0_mip_spoutp(Freq)[0.975000,1.025000]0.9980.998sd_mip_hsspoutp(SNR)[40.000000,90.000000]57.88405254.684184sd_mip_hsspoutp(Amp)[0.600000,1.500000]1.4325461.433973sd_mip_hsspoutp(Freq)[0.975000,1.025000]0.9980.998txmode_shp(SNR)[-50.000000,-40.000000]-41.845156-41.854551txmode_shp(Amp)[0.300000,0.800000]0.6524980.652403txmode_shp(Freq.)[15.000000,16.000000]15.5937515.59375POR_HIGH3[1.500000V,3.300000V]2.018592V2.018204VPOR_LOW1[-50.000000mV,750.000000mV]-0.233000mV-0.233000mVPOR_HIGH4[1.500000V,3.300000V]1.999053V1.999286V8ShmooResponseTestComparisonWithoutSMM+newpogopin：WithSMM+newpogopin:By測試比對,pogopinwithSMM與Pogopinwithoutsocket的pass區間範圍也無明顯差異，也無marginalissue.目的與現況原因分析改善措施實驗確認標準化DeviceType:2A5-0719004-00Program:RV730_XTMVD_A13F1P_170revEDevice:Goldenunitx1ea9-----Yield&O/Sparison目的與現況原因分析改善措施實驗確認標準化SametesterP-value<0.05，soit’ssignificant10-----Yield&O/Sparison目的與現況原因分析改善措施實驗確認標準化P-value<0.05，soit’ssignificantDifferenttester