模电设计-电流镜负载的差分放大器

模拟集成电路课程设计报告电流镜负载的差分放大器摘要:差分放大器是最重要的电路发明之一，它可以追溯到真空管时代。有于差动放大具有很多有用的特性， 像对差模输入信号的放大作用和对共模输入信号的抑制作用， 所以它已经成为当代高性能模拟电路和混合信号电路的主要选择。 电流源在差分放大器中广泛应用， 电流源起一个大电阻的作用， 但不消耗过多的电压余度。 在模拟电路中，电流源的设计是基于对基准电流的“复制” ，稳定的基准电流则由一个相对复杂的电路来产生。 在电流镜中， 只需调整 MOS管的W/L就能获得不同的、精确的复制电流。在本课程设计中，将根据典型电流镜负载差动对中，增益、带宽与 MOS管W/L之间的关系，获得满足要求的放大器。一.设计目标 二．单个 MOS一.设计目标 二．单个 MOS管的的特性2.1、NMOS特性仿真 - 2 - - 2 -、 PMOS特性仿真 - 4 -\o"CurrentDocument"三．电路设计与参数推导 - 6 -电路设计： - 6 -\o"CurrentDocument"手工推导参数 - 7 -\o"CurrentDocument"四．差分放大器仿真 - 9 -HSPICE仿真： - 9 -器件参数修改 - 10 -仿真波形 - 12 -、共模电平的范围： - 13 -数据对比 - 16 -五.总结 - 17 ----设计一款差分放大器，要求满足性能指标：参考电路图：一.设计目标负载电容 CL1pFVDD5V对管的m取4的倍数低频开环增益 >100GBW（增益带宽积 ）>30MHz输入共模范围 >3V功耗、面积尽量小MOS管的的特性MOS管是金属 (metal)—氧化物 (oxid)—半导体 (semiconductor)你(insulator)—半导体。 MOS管source和drain是可以对调的，他们都是在 P型backgate中形成的N型区。在多数情况下，这个两个区是一样的，即使两端对调也不会、NMOS特性仿真HSPICE仿真:ProjectNMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt

.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.unprotM1I1VBSVDS.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotM1I1VBSVDSM=1VDVB0 0NVNL=1UW=10UM=1VB0 1VD0 5DICTIONARY1GND=0.optionspostlist.dcVDS050.1.op.printi1(M1I1).END仿真波形：仿真得出的数据：subcktelement0:m1i1model0:nvnregionSaturatiid 18.6184uibs-4.227e-22ibd -23.6496avgs 1.0000vds 5.0000vbs 0.

vthvdsatvodbetagameffgmgdsgmbcdtotcgtotcstotcbtotcgscgd参数计算：830.1150m125.6460m169.8850m1.4749m894.5056m192.1882u1.2418u72.1958u12.5800f24.0149f31.6174f34.8211f18.4311f2.8784fID2nCox830.1150m125.6460m169.8850m1.4749m894.5056m192.1882u1.2418u72.1958u12.5800f24.0149f31.6174f34.8211f18.4311f2.8784fVIDDS 12 nCox(WL)(VGSVTH)2nn=0.035、PMOS特性仿真HSPICE仿真：ProjectPMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6*Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotM1I1VDSVGSVDDVDDNVPL=1UW=10UM=1V1I2 VGS0 4V1I3 VDS0 5V1I4VDD05DICTIONARY1GND=0.optionspostlist.dcV1I3050.1*V1I23.550.1.op.printi1(M1I1).END仿真得出的数据：subcktelement0:m1i1

modelregionidibsmodelregionidibsibdvgsvdsvbsvthvdsatvodbetagameffgmgdsgmbcdtotcgtotcstotcbtotcgscgd参数计算：Linear0.0.0.-1.00000.0.-899.3391m-136.0660m-100.6609m471.1383u384.0716m0.46.9930u0.29.4825f30.8144f30.3463f40.6913f17.7584f12.8808fTOC\o"1-5"\h\z1W 2ID2pCox(L)(VGSVTH)(1+pVDS)IDVIDVDSnCox( )(VGS VTH) p2L由仿真结果可以得出 p=0.0729p三．电路设计与参数推导电路设计：

手工推导参数n0.035，VTH0.7231，tox1.17108， n=3.830010-2p0.0729，VTH0.906，tox1.2108， n=2.43342410-2由库文件可以得到上述除了 λn、λp外的器件参数， λn、λp可以由mos管的仿真得到。0si 3Cox0si=2.95103tox由性能指标低频开环增益 >100，GBW（增益带宽积 ），CL=1pf可得AV gAV gm(ro2//ro4)100BW3dB12(ro2//ro4)CLGBWgm301062CL求得gm22CL301061.88491044我们设计中取 gm2310。11ro2//ro42 4 (np)ID0.1079ID

BW3dB2(roBW3dB2(ro2//ro4)CL30104AV2CL30104 6IDL 17.469106A另一方面求得 ID27.8106另一方面求得 ID27.8106A。因此 ID可取的范围为AV gm(ro2//ro4)gm21 100(np)ID17.469mAID27.8mA。所以我们取单边电流 ID=25mA。忽略沟长调制效应，W15.931求得Lg忽略沟长调制效应，W15.931求得Lgm2 2nCoxIDWW2gm2LL2nCoxIDW()1216这里我们取 L12下一步应该确定 M3，M4，M5，M6的宽长比。D1CoxW(VGSVTH)2(1 VDS)可得2I可得2ID2IDLCox(VGSVTH)2(1 VDS) Cox(VGSVTH)2M5M5，M6的取负载管 M3，M4的过驱动电压(W)34TOC\o"1-5"\h\z这里我们取 L34同理取电流源管( )34 7.739Vod=300mV可得L 。过驱动电压 Vod=500mV可得AVgmAVgm(ro2//ro4)2 nCoxIDWL1(n p)ID343.540。这里我们取(WL)56这里我们取1AV30106 6111.214100理论开环增益 :V 0.107925106g 310GBWgm 310 47.746M理论单位增益带宽 : 2CL 2109理论共模输入电平最小VincomMINVGS1Vod60.723231理论共模输入电平最大VincomMAX5VVGS3VTH15(0.9060.3)0.72314.5171理论共模输入电平范围最大值为 V=4.5171-1.4231=3.0940V四．差分放大器仿真电流源负载的差分放大器整体电路图：HSPICE仿真：ProjectDC_NMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotcoutvout01pfM3M3dg-M4g-M1dM3dg-M4g-M1dvddvddNVPL=1UW=8UM=1

M4 voutM3dg-M4g-M1dvddvdd NVPL=1UW=8UM=1M1 M3dg-M4g-M1din1M1s-M2s-M6d0NVNL=1UW=16U M=1sM2 voutin2M1s-M2s-M6d0NVNL=1UW=16UM=1M6 M1s-M2s-M6dM6g-M5dg0 0 NVNL=1UW=4U M=1M5M6g-M5dgM6g-M5dg0 0NVNL=1UW=4UM=1V1vdd05VI10M6g-M5dgDC=50uAVin1in202.5Vac=0.5vVin2in102.5Vac=0.5v180DICTIONARY1GND=0.OPTIONSPROBE.OP.dcV1050.1.acdec101k100meg.optionslistnodepost.printacvdb(vout).end4.2、器件参数修改发现波形锁呈现出来的增益带宽积为 43.1M，已经达到题目的要求， 但是低频开环增益39.6db左右，即放大倍数小于 100倍，达不到题目要求，所以尝试加大 M1,M2的M值，m为4的倍数，所以各自增大到 4.hspice仿真如下：ProjectDC_NMOS

InnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotcoutvout01pfM=1M=4M=1M=4M4 voutM3dg-M4g-M1dvddvdd NVPL=1UW=8UM=1M1 M3dg-M4g-M1din1M1s-M2s-M6d0NVNL=1UW=16UM2 voutin2M1s-M2s-M6d0NVNL=1UW=16UM=4TOC\o"1-5"\h\zM6 M1s-M2s-M6dM6g-M5dg0 0NVNL=1UW=4U M=1M5M6g-M5dgM6g-M5dg0 0NVNL=1UW=4UM=1V1 vdd0 5VI10M6g-M5dgDC=50uAVin1 in20 2.5Vac=0.5vVin2 in10 2.5Vac=0.5v 180DICTIONARY1GND=0.OPTIONSPROBE.OP.dcV1050.1.acdec101k100meg.optionslistnodepost.printacvdb(vout).end

4.3仿真波形图中明显能看出放大器的单位增益带宽超过 42db即放大倍数有 125.89，同59.1M，明显已经满足设计中的带宽和增益的要求。仿真的.lis文件部分数据如下：*projectdc_nmosacanalysistnom=25.000temp=25.000acanalysisfreqvoltdbvout1.00000k42.33431.25893k42.33431.58489k42.33421.99526k42.33422.51189k42.33423.16228k42.33413.98107k42.33405.01187k42.33386.30957k42.33357.94328k42.333110.00000k42.332412.58925k42.331215.84893k42.329519.95262k42.326625.11886k42.3222

31.62278k42.315139.81072k42.303950.11872k42.286263.09573k42.258379.43282k42.2144100.00000k42.1458125.89254k42.0392158.48932k41.8754199.52623k41.6279251.18864k41.2625316.22777k40.7397398.10717k40.0218501.18723k39.0824630.95734k37.9154794.32823k36.53731.00000x34.98101.25893x33.28621.58489x31.49041.99526x29.62422.51189x27.71073.16228x25.76583.98107x23.80065.01187x21.82196.30957x19.83427.94328x17.840210.00000x15.841212.58925x13.837215.84893x11.827519.95262x9.810125.11886x7.781331.62278x5.735639.81072x3.664350.11872x1.554863.09573x-609.6717m79.43282x-2.8499100.00000x-5.1871共模电平的范围：则在上面的 hspice语言中最后的修改如下：.OPTIONSPROBE.OP*.dcVin1050.1*.printacvM(vout).printi1(M3)

.optionslistnodepost.END出来的波形如下：可以看出当输入共模电平达到 1.6V时所有的 MOS管已处于饱和状态。输出电流基本比较接近 25mA了。以下数据是当共模输入电平为 Vincom=Vgsm1+Vdsm6=1.6V时仿真得到的数据****mosfetssubcktelement0:m30:m40:m10:m20:m60:m5model0:nvp0:nvp0:nvn0:nvn0:nvn0:nvnregionSaturatiSaturatiSaturatiSaturatiSaturatiSaturatiid-23.3008u-23.3008u23.3008u23.3008u46.6016u50.0000uibs1.185e-211.185e-21-16.2402a-16.2402a-1.058e-21-1.135e-21ibd4.6881a4.6881a-113.8455a-113.8455a -1.0139a -2.5571avgs-1.2392-1.23921.06351.06351.35211.3521vds-1.2392-1.23923.22433.2243536.4570m1.3521vbs0.0.-536.4570m-536.4570m0.0.vth-898.4776m-898.4776m1.02021.0202840.6927m839.6145mvdsat-325.6130m-325.6130m71.2561m71.2561m310.9569m311.4916mvod-340.7521m-340.7521m43.3089m43.3089m511.4315m512.5097mbeta359.5878u359.5878u9.5044m9.5044m576.1957u576.2126ugameff384.0653m384.0653m908.7034m908.7034m894.5198m894.5210mgm119.6053u119.6053u402.3115u402.3115u159.6314u174.0003ugds2.0864u2.0864u990.6995n990.6995n8.9999u2.0796ugmb29.2127u29.2127u120.0342u120.0342u56.6258u61.4295ucdtot11.5100f11.5100f83.0119f83.0119f7.0004f6.2662fcgtot20.3759f20.3759f131.8157f131.8157f9.6359f9.6096f26.4459f26.4459f163.4455f163.4455f13.1528f13.1500fcstot

cbtot28.1764f28.1764f199.0483f199.0483f16.2186f15.5264fcgs17.7019f17.7019f91.4478f91.4478f7.7484f7.7420fcgd1.6795f1.6795f18.1567f18.1567f1.0386f1.0019f以下数据时当共模输入电平为****mosfets以下数据时当共模输入电平为****mosfetssubcktelement0:m30:m40:m10:m20:m60:m5model0:nvp0:nvp0:nvn0:nvn0:nvn0:nvnregionSaturatiSaturatiSaturatiSaturatiSaturatiSaturatiid-26.0692u-26.0692u26.0692u26.0692u52.1384u50.0000uibs1.326e-211.326e-21-24.5995a-24.5995a-1.184e-21-1.135e-21ibd4.7720a4.7720a-28.2928a-28.2928a-6.1486a-2.5571avgs-1.2614-1.26141.74961.74961.35211.3521vds-1.2614-1.2614488.1626m488.1626m3.25041.3521vbs0.0.-3.2504-3.25040.0.vth-898.4814m-898.4814m1.60661.6066837.0766m839.6145mvdsat-343.1824m-343.1824m144.8909m144.8909m312.7809m311.4916mvod-362.9668m-362.9668m142.9751m142.9751m515.0476m512.5097mbeta358.2060u358.2060u2.3586m2.3586m576.2513u576.2126ugameff384.0646m384.0646m955.8307m955.8307m894.5218m894.5210mgm125.7337u125.7337u289.6421u289.6421u180.5302u174.0003ugds2.2816u2.2816u4.1017u4.1017u764.2799n2.0796ugmb30.7391u30.7391u45.7557u45.7557u63.5969u61.4295ucdtot11.4719f11.4719f20.1149f20.1149f5.6403f6.2662fcgtot20.3750f20.3750f35.3235f35.3235f9.7477f9.6096fcstot26.4458f26.4458f37.8057f37.8057f13.1491f 13.1500fcbtot28.1257f28.1257f40.1024f40.1024f14.7630f 15.5264fcgs17.7131f17.7131f28.2358f28.2358f7.7386f7.7420fcgd1.6796f1.6796f3.8744f3.8744f1.1407f1.0019fV=5-1.6=3.4V这个值比理论计算出来的值大，这是由于实际中我们忽略了放大管M1，M2的这个值比理论计算出来的值大，这是由于实际中我们忽略了放大管衬偏效应。实际上可以看出在 Vin=1.6V时，M1，M2管已经存在衬偏效应，此时放大管的阈值电压输入共模电平增大到536.4570mV增大到没有进入线性区。时放大管的阈值电压输入共模电平增大到536.4570mV增大到没有进入线性区。5V，此时的阈值电压增大到 VTH=1.6066V，并且Vds6从3.2504V。从而导致即使输入共模电平增大到 5V，负载管仍一下数据是仿真得到功耗：****voltagesourcessubcktelementvoltscurrent0:v1subcktelementvoltscurrent0:v15.0000-49.7605u0:vin12.50000.power248.8025u 0.tot