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CST&SAVVYMOCVD简介.CST&SAVVYMOCVD简介.1ContentIntroductionThecomparisonofEpitaxialTechniquesThemechanismofMOCVDThecomparisonofvariousMOCVDTheprincipleofMOEpitaxyApplication.ContentIntroduction.2IntroductionMOCVD之命名

MOCVD→metal-organicchemicalvapordeposition (金屬有機的化學氣相沉積)OMVPE→organometallicvapor-phaseepitaxy (有機金屬的氣相磊晶)

(MOCVD,OMVPE,MOVPE,OMCVD).IntroductionMOCVD之命名.3ThecomparisonofEpitaxialTechniquesLiquid-PhaseEpitaxy(LPE)液相磊晶Vapor-PhaseEpitaxy(VPE)氣相磊晶OrganmetallicVapor-PhaseEpitaxy(OMVPE) 有機金屬氣相磊晶Molecular-BeamEpitaxy(MBE)分子束磊晶Chemical-BeamEpitaxy(CBE) MOCVD&MBE(MOMBE).ThecomparisonofEpitaxialTe4TheMechanismofMOCVDGasMixingBoxCarriergasHydridesourceMOsourceLaminaflowfieldReactorGasflow(Horizontal&Vertical)Heaterelement(RF-induction&Resistanceheater)CoolingsystemDownStream&ExhaustAutoControl&SafetyControlSystem.TheMechanismofMOCVDGasMixi5GasMixingBox–CarrierGas.GasMixingBox–CarrierGas.6GasMixingBox–HydrideSource.GasMixingBox–HydrideSourc7GasMixingBox–MOSource.GasMixingBox–MOSource.8Thelaminaflowfield.Thelaminaflowfield.9Thedownstream&Exhaust.Thedownstream&Exhaust.10AutoControlSystem.AutoControlSystem.11ThecomparisonofvariousMOCVDHorizontalReactorAIXTRONTHOMASSWANVerticalReactorVEECOTwo-flowMOCVDNichia→NakamuraThree-flowMOCVDNIPPONSANSO.ThecomparisonofvariousMOCV12HorizontalReactor---IAix2400/2600G3reactor.HorizontalReactor---IAix13HorizontalReactor---II.HorizontalReactor---II.14HorizontalReactor---III.HorizontalReactor---III.15VerticalReactor.VerticalReactor.16Two-flowMOCVD.Two-flowMOCVD.17Three-flowMOCVD.Three-flowMOCVD.18TheprincipleofMOCVD’sEpitaxyMOCVD磊晶機制UsingmetalalkylsassourcesChemicalreactionGa(CH3)3+NH3→GaN+…..Ga(CH3)3+In(CH3)3+NH3→InGaN+…..Ga(CH3)3+Al(CH3)3+NH3→AlGaN+…...TheprincipleofMOCVD’sEpita19KeyprocessesinMOCVDgrowthThermodynamicsMassandheattransportPhysicalsurfaceprocessesChemicalreactionsSubsurfaceprocesses.KeyprocessesinMOCVDgrowth20GaNLEDgrowthDevicestructureEpitaxyPatentsissue.GaNLEDgrowthDevicestructure21Devicestructure.Devicestructure.22EpitaxyNucleationlayer(bufferlayer)L.T.GaNgrowthN-tpyelayerH.T.GaN:SigrowthActivelayerDHSQWMQWP-typelayerH.T.GaN:Mggrowth.EpitaxyNucleationlayer(buffe23OES/ITRI’sGaNwafer.OES/ITRI’sGaNwafer.24PatternIssue磊晶技術的難題磊晶技術的關鍵專利Bufferlayer

關鍵專利P-type

活化之關鍵專利Devicestructure之關鍵專利製程技術的難題及專利.PatternIssue磊晶技術的難題.25磊晶技術的難題BufferlayerP-typeActivationDeviceStructure.磊晶技術的難題Bufferlayer.26磊晶技術的關鍵專利CompetitionPatentNo.BufferlayerNichia(Nakamura)US5290393/1994ToyodaGosei(Akasaki)US4855249/1989AdvancedTechnologyMaterialsUS5874747/1989P-typeActivationNichia(Nakamura)US5468678/1995ToyodaGosei(Amano)JJAP,vol.28,No.

12,Dec.1989,pp.2122-2114.XeroxUS5926726/1999DevicestructureNichia(Nakamura)US5563422/1996Nichia,ToyodaGosei,HP,Cree,…..andsoonDenBarELOGToyodaBoublebufferlayer總數大於100篇在結構方面.磊晶技術的關鍵專利CompetitionPatentNo.27Bufferlayer關鍵專利Nichia(Nakamura) Al2O3/GaN(LT) Al2O3/AlxGa1-xN(LT)ToyodaGosei(Akasaki) Al2O3/AlN(LT)AdvancedTechnologyMaterials SiC/GaN(LT)GradAlN(LT).Bufferlayer關鍵專利Nichia(Nakam28P-type

活化之關鍵專利Nichia(Nakamura) P-GaNAnnealingToyodaGosei(Akasaki) P-typeLow-EnergyElectronBeamIrradiation(LEEBI)Xerox

In-situacceptoractivation.P-type活化之關鍵專利Nichia(Nakamura29Devicestructure之關鍵專利Nichia(Nakamura) P-N同面之磊晶結構(US5563422/1996)ToyodaGosei(Akasaki) DoublebufferlayerNichia&StevenP.Denbaars ELOG.Devicestructure之關鍵專利Nichia(30製程技術的難題及專利Nichia(Nakamura) P-N同面之磊晶結構

(US5563422/1996)TCL的製作

ITRI的TCL專利(1999).製程技術的難題及專利Nichia(Nakamura).31DoublebufferlayerMaterials:GaNorAlNTg:400℃Thickness:20nm.DoublebufferlayerMaterials:32EpitaxialLateralOvergrowthFigure2.SchematicofELOprocessforGaN.TheGaNemergingfromthewindowregionshasahighdensityofthreadingdislocations(~1010percm2),whereastheGaNovergrowthontheSi02stripeshasadrasticreductionindislocationdensityto~104percm2orless..EpitaxialLateralOvergrowthFi33EpitaxialLateralOvergrowth

Nichia(Nakamura)J.Mater.Res.,Vol.14,No.7,Jul1999.EpitaxialLateralOvergrowth

34CST&SAVVYMOCVD简介.CST&SAVVYMOCVD简介.35ContentIntroductionThecomparisonofEpitaxialTechniquesThemechanismofMOCVDThecomparisonofvariousMOCVDTheprincipleofMOEpitaxyApplication.ContentIntroduction.36IntroductionMOCVD之命名

MOCVD→metal-organicchemicalvapordeposition (金屬有機的化學氣相沉積)OMVPE→organometallicvapor-phaseepitaxy (有機金屬的氣相磊晶)

(MOCVD,OMVPE,MOVPE,OMCVD).IntroductionMOCVD之命名.37ThecomparisonofEpitaxialTechniquesLiquid-PhaseEpitaxy(LPE)液相磊晶Vapor-PhaseEpitaxy(VPE)氣相磊晶OrganmetallicVapor-PhaseEpitaxy(OMVPE) 有機金屬氣相磊晶Molecular-BeamEpitaxy(MBE)分子束磊晶Chemical-BeamEpitaxy(CBE) MOCVD&MBE(MOMBE).ThecomparisonofEpitaxialTe38TheMechanismofMOCVDGasMixingBoxCarriergasHydridesourceMOsourceLaminaflowfieldReactorGasflow(Horizontal&Vertical)Heaterelement(RF-induction&Resistanceheater)CoolingsystemDownStream&ExhaustAutoControl&SafetyControlSystem.TheMechanismofMOCVDGasMixi39GasMixingBox–CarrierGas.GasMixingBox–CarrierGas.40GasMixingBox–HydrideSource.GasMixingBox–HydrideSourc41GasMixingBox–MOSource.GasMixingBox–MOSource.42Thelaminaflowfield.Thelaminaflowfield.43Thedownstream&Exhaust.Thedownstream&Exhaust.44AutoControlSystem.AutoControlSystem.45ThecomparisonofvariousMOCVDHorizontalReactorAIXTRONTHOMASSWANVerticalReactorVEECOTwo-flowMOCVDNichia→NakamuraThree-flowMOCVDNIPPONSANSO.ThecomparisonofvariousMOCV46HorizontalReactor---IAix2400/2600G3reactor.HorizontalReactor---IAix47HorizontalReactor---II.HorizontalReactor---II.48HorizontalReactor---III.HorizontalReactor---III.49VerticalReactor.VerticalReactor.50Two-flowMOCVD.Two-flowMOCVD.51Three-flowMOCVD.Three-flowMOCVD.52TheprincipleofMOCVD’sEpitaxyMOCVD磊晶機制UsingmetalalkylsassourcesChemicalreactionGa(CH3)3+NH3→GaN+…..Ga(CH3)3+In(CH3)3+NH3→InGaN+…..Ga(CH3)3+Al(CH3)3+NH3→AlGaN+…...TheprincipleofMOCVD’sEpita53KeyprocessesinMOCVDgrowthThermodynamicsMassandheattransportPhysicalsurfaceprocessesChemicalreactionsSubsurfaceprocesses.KeyprocessesinMOCVDgrowth54GaNLEDgrowthDevicestructureEpitaxyPatentsissue.GaNLEDgrowthDevicestructure55Devicestructure.Devicestructure.56EpitaxyNucleationlayer(bufferlayer)L.T.GaNgrowthN-tpyelayerH.T.GaN:SigrowthActivelayerDHSQWMQWP-typelayerH.T.GaN:Mggrowth.EpitaxyNucleationlayer(buffe57OES/ITRI’sGaNwafer.OES/ITRI’sGaNwafer.58PatternIssue磊晶技術的難題磊晶技術的關鍵專利Bufferlayer

關鍵專利P-type

活化之關鍵專利Devicestructure之關鍵專利製程技術的難題及專利.PatternIssue磊晶技術的難題.59磊晶技術的難題BufferlayerP-typeActivationDeviceStructure.磊晶技術的難題Bufferlayer.60磊晶技術的關鍵專利CompetitionPatentNo.BufferlayerNichia(Nakamura)US5290393/1994ToyodaGosei(Akasaki)US4855249/1989AdvancedTechnologyMaterialsUS5874747/1989P-typeActivationNichia(Nakamura)US5468678/1995ToyodaGosei(Amano)JJAP,vol.28,No.

12,Dec.1989,pp.2122-2114.XeroxUS5926726/1999DevicestructureNichia(Nakamura)US5563422/1996Nichia,ToyodaGosei,HP,Cree,…..andsoonDenBarELOGToyodaBoublebufferlayer總數大於100篇在結構方面.磊晶技術的關鍵專利CompetitionPatentNo.61Bufferlayer關鍵專利Nichia(Nakamura) Al2O3/GaN(LT) Al2O3/AlxGa1-xN(LT)ToyodaGosei(Akasaki) Al2O3/AlN(LT)AdvancedTechnologyMaterials SiC/GaN(LT)GradAlN(LT).Bufferlayer關鍵專利Nichia(Nakam62P-type

活化之關鍵專利Nichia(Nakamura) P-GaNAnnealingToyodaGosei(Akasaki) P-typeLow-EnergyElectronBeamIrradiation(LEEBI)Xerox

In-situacceptorac

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